GB1416964A - Contact between an electrode metal and a semiconductor - Google Patents

Contact between an electrode metal and a semiconductor

Info

Publication number
GB1416964A
GB1416964A GB3260573A GB3260573A GB1416964A GB 1416964 A GB1416964 A GB 1416964A GB 3260573 A GB3260573 A GB 3260573A GB 3260573 A GB3260573 A GB 3260573A GB 1416964 A GB1416964 A GB 1416964A
Authority
GB
United Kingdom
Prior art keywords
layer
semi
conductor
dopant
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3260573A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Akimov J S
Original Assignee
Akimov J S
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akimov J S filed Critical Akimov J S
Priority to GB3260573A priority Critical patent/GB1416964A/en
Publication of GB1416964A publication Critical patent/GB1416964A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrolytic Production Of Metals (AREA)

Abstract

1416964 Semi-conductor devices J S AKIMOV A A GALAEV S S GORELIK B I GOFMAN V D ERMOSHIN S K KOROVIN V V NAUMOV K A PREOBRAZHENTSEV S V FRONK V L SHVARTSMAN V V GARSHENIN O F ASTAKHOV I I KRUGLOV and M M SAMOKHVALOV 9 July 1973 32605/73 Heading H1K Deleterious surface oxides of semi-conductor material are reduced during manufacture of a contact between an electrode metal and a semi-conductor body by providing directly on the semi-conductor surface a thin (less than 1000 Š thick) layer of a metal capable of performing the reduction at the contact-processing temperature. A thicker layer of the electrode metal is deposited over the thin reducing metal layer, followed in sequence by at least one layer of a dopant and another layer of the electrode metal, and the multi-layer structure is then heated to form a melt of the electrode metal, the dopant and the semi-conductor, from which melt the dopant diffuses into the semi-conductor body. For contact to P- and N- type Si the reducing metal may be Ti, Nb or Zr, the electrode metal may be Ag, Au or Sn and the dopant may be Al or Sb. Transistors and diodes are mentioned, but the main embodiments are contacts for varicaps. In one example, separate layers of Al and Sb alternate with Ag layers in the preliminary structure and diffuse together into the P-type Si body on heating to form the required PN junction. The electrode and dopant layers may be vacuum deposited or, if a layer of Ni is provided immediately on the layer of reducing metal, may be chemically or electrochemically deposited. Reference has been directed by the Comptroller to Specification. 1,196,541.
GB3260573A 1973-07-09 1973-07-09 Contact between an electrode metal and a semiconductor Expired GB1416964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3260573A GB1416964A (en) 1973-07-09 1973-07-09 Contact between an electrode metal and a semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3260573A GB1416964A (en) 1973-07-09 1973-07-09 Contact between an electrode metal and a semiconductor

Publications (1)

Publication Number Publication Date
GB1416964A true GB1416964A (en) 1975-12-10

Family

ID=10341235

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3260573A Expired GB1416964A (en) 1973-07-09 1973-07-09 Contact between an electrode metal and a semiconductor

Country Status (1)

Country Link
GB (1) GB1416964A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998050944A2 (en) * 1997-05-06 1998-11-12 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
WO2001041221A1 (en) * 1999-11-23 2001-06-07 Ebara Solar, Inc. Method and apparatus for self-doping contacts to a semiconductor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998050944A2 (en) * 1997-05-06 1998-11-12 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
WO1998050944A3 (en) * 1997-05-06 1999-05-27 Ebara Solar Inc Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
US6180869B1 (en) 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
WO2001041221A1 (en) * 1999-11-23 2001-06-07 Ebara Solar, Inc. Method and apparatus for self-doping contacts to a semiconductor
US6632730B1 (en) 1999-11-23 2003-10-14 Ebara Solar, Inc. Method for self-doping contacts to a semiconductor
US6664631B2 (en) 1999-11-23 2003-12-16 Ebara Solar, Inc. Apparatus for self-doping contacts to a semiconductor
US6703295B2 (en) 1999-11-23 2004-03-09 Ebara Corporation Method and apparatus for self-doping contacts to a semiconductor
US6737340B2 (en) 1999-11-23 2004-05-18 Ebara Corporation Method and apparatus for self-doping contacts to a semiconductor

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee