CA2392342C - Method and apparatus for self-doping contacts to a semiconductor - Google Patents
Method and apparatus for self-doping contacts to a semiconductor Download PDFInfo
- Publication number
- CA2392342C CA2392342C CA2392342A CA2392342A CA2392342C CA 2392342 C CA2392342 C CA 2392342C CA 2392342 A CA2392342 A CA 2392342A CA 2392342 A CA2392342 A CA 2392342A CA 2392342 C CA2392342 C CA 2392342C
- Authority
- CA
- Canada
- Prior art keywords
- dopant
- semiconductor
- temperature
- silver
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 239000002019 doping agent Substances 0.000 claims abstract description 120
- 229910052709 silver Inorganic materials 0.000 claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 78
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 239000004332 silver Substances 0.000 claims abstract description 73
- 230000005496 eutectics Effects 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000007650 screen-printing Methods 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 50
- 239000000956 alloy Substances 0.000 claims description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 47
- 229910052782 aluminium Inorganic materials 0.000 claims description 42
- 229910052698 phosphorus Inorganic materials 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 239000011574 phosphorus Substances 0.000 claims description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims 17
- 239000008187 granular material Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 abstract description 44
- 238000005275 alloying Methods 0.000 abstract description 36
- 229910017982 Ag—Si Inorganic materials 0.000 abstract description 14
- 229910001316 Ag alloy Inorganic materials 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract description 5
- 230000008018 melting Effects 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract description 5
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 4
- 238000004943 liquid phase epitaxy Methods 0.000 abstract description 4
- 229910000676 Si alloy Inorganic materials 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 239000007790 solid phase Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 57
- 239000002245 particle Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 238000012545 processing Methods 0.000 description 12
- 230000003667 anti-reflective effect Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000000523 sample Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 238000010587 phase diagram Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 230000007480 spreading Effects 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 210000003127 knee Anatomy 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- LGFYIAWZICUNLK-UHFFFAOYSA-N antimony silver Chemical compound [Ag].[Sb] LGFYIAWZICUNLK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- -1 however Chemical compound 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16735899P | 1999-11-23 | 1999-11-23 | |
| US60/167,358 | 1999-11-23 | ||
| US09/538,034 US6632730B1 (en) | 1999-11-23 | 2000-03-29 | Method for self-doping contacts to a semiconductor |
| US09/538,034 | 2000-03-29 | ||
| PCT/US2000/032257 WO2001041221A1 (en) | 1999-11-23 | 2000-11-22 | Method and apparatus for self-doping contacts to a semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2392342A1 CA2392342A1 (en) | 2001-06-07 |
| CA2392342C true CA2392342C (en) | 2011-01-04 |
Family
ID=26863088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2392342A Expired - Fee Related CA2392342C (en) | 1999-11-23 | 2000-11-22 | Method and apparatus for self-doping contacts to a semiconductor |
Country Status (10)
| Country | Link |
|---|---|
| US (4) | US6632730B1 (enExample) |
| EP (1) | EP1234342A1 (enExample) |
| JP (1) | JP2003529207A (enExample) |
| KR (1) | KR20020066327A (enExample) |
| CN (1) | CN1260830C (enExample) |
| AU (1) | AU780960B2 (enExample) |
| BR (1) | BR0015803A (enExample) |
| CA (1) | CA2392342C (enExample) |
| MX (1) | MXPA02005186A (enExample) |
| WO (1) | WO2001041221A1 (enExample) |
Families Citing this family (77)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045187B2 (en) * | 1998-06-22 | 2006-05-16 | Nee Han H | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314657B2 (en) * | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7384677B2 (en) * | 1998-06-22 | 2008-06-10 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US6852384B2 (en) * | 1998-06-22 | 2005-02-08 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7316837B2 (en) * | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314659B2 (en) * | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7374805B2 (en) * | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| WO2004066354A2 (en) * | 2003-01-16 | 2004-08-05 | Target Technology Company, Llc | Photo-voltaic cells including solar cells incorporating silver-alloy reflective and/or transparent conductive surfaces |
| WO2004094135A1 (en) * | 2003-04-18 | 2004-11-04 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US8664525B2 (en) * | 2003-05-07 | 2014-03-04 | Imec | Germanium solar cell and method for the production thereof |
| US7964789B2 (en) * | 2003-05-07 | 2011-06-21 | Imec | Germanium solar cell and method for the production thereof |
| US7960645B2 (en) * | 2003-05-07 | 2011-06-14 | Imec | Germanium solar cell and method for the production thereof |
| US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
| US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
| JP2005135942A (ja) * | 2003-10-28 | 2005-05-26 | Canon Inc | 電極配設方法 |
| US20050172996A1 (en) | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
| US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| US20060039973A1 (en) * | 2004-08-19 | 2006-02-23 | Mary Aldritt | Effervescent composition including water soluble dietary fiber |
| DE102004044709A1 (de) * | 2004-09-15 | 2006-03-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur gleichzeitigen Rekristalisierung und Dotierung von Halbleiterschichten und nach diesem Verfahren hergestellte Halbleiterschichtsysteme |
| JP4846219B2 (ja) * | 2004-09-24 | 2011-12-28 | シャープ株式会社 | 結晶シリコン太陽電池の製造方法 |
| US20060102228A1 (en) * | 2004-11-12 | 2006-05-18 | Ferro Corporation | Method of making solar cell contacts |
| US7790574B2 (en) | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
| GB2424312B (en) * | 2005-03-14 | 2010-03-03 | Denso Corp | Method of forming an ohmic contact in wide band semiconductor |
| US8093491B2 (en) | 2005-06-03 | 2012-01-10 | Ferro Corporation | Lead free solar cell contacts |
| US7824579B2 (en) * | 2005-06-07 | 2010-11-02 | E. I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US20070014963A1 (en) * | 2005-07-12 | 2007-01-18 | Nee Han H | Metal alloys for the reflective layer of an optical storage medium |
| US7718092B2 (en) * | 2005-10-11 | 2010-05-18 | E.I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| CN101394739A (zh) * | 2006-02-28 | 2009-03-25 | 西巴控股公司 | 抗微生物化合物 |
| US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
| US8076570B2 (en) * | 2006-03-20 | 2011-12-13 | Ferro Corporation | Aluminum-boron solar cell contacts |
| ATE441156T1 (de) * | 2006-05-04 | 2009-09-15 | Elektrobit Wireless Comm Ltd | Verfahren zum betrieb eines rfid-netzwerks |
| US20080111206A1 (en) * | 2006-11-10 | 2008-05-15 | Evergreen Solar, Inc. | Substrate with Two Sided Doping and Method of Producing the Same |
| CA2568136C (en) * | 2006-11-30 | 2008-07-29 | Tenxc Wireless Inc. | Butler matrix implementation |
| WO2008070087A2 (en) * | 2006-12-05 | 2008-06-12 | Nano Terra Inc. | Method for patterning a surface |
| US8608972B2 (en) * | 2006-12-05 | 2013-12-17 | Nano Terra Inc. | Method for patterning a surface |
| EP2100336A4 (en) * | 2006-12-22 | 2013-04-10 | Applied Materials Inc | CONNECTING TECHNOLOGIES FOR REVERSE SOLAR CELLS AND MODULES |
| EP2104147B1 (en) * | 2006-12-26 | 2015-04-15 | Kyocera Corporation | Solar cell element and solar cell element manufacturing method |
| JP5530920B2 (ja) * | 2007-04-25 | 2014-06-25 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池 |
| US20080264332A1 (en) * | 2007-04-25 | 2008-10-30 | Fareed Sepehry-Fard | Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process |
| TWI449183B (zh) * | 2007-06-13 | 2014-08-11 | Schott Solar Ag | 半導體元件及製造金屬半導體接點之方法 |
| US8309844B2 (en) | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
| CN102593243A (zh) * | 2007-08-31 | 2012-07-18 | 费罗公司 | 用于太阳能电池的分层触点结构 |
| WO2009064870A2 (en) * | 2007-11-13 | 2009-05-22 | Advent Solar, Inc. | Selective emitter and texture processes for back contact solar cells |
| US20090239363A1 (en) * | 2008-03-24 | 2009-09-24 | Honeywell International, Inc. | Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes |
| KR20110008284A (ko) * | 2008-04-29 | 2011-01-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 모놀리식 모듈 어셈블리 기술들을 이용하여 제조된 광전지 모듈들 |
| US8207444B2 (en) * | 2008-07-01 | 2012-06-26 | Sunpower Corporation | Front contact solar cell with formed electrically conducting layers on the front side and backside |
| US20100035422A1 (en) * | 2008-08-06 | 2010-02-11 | Honeywell International, Inc. | Methods for forming doped regions in a semiconductor material |
| US8053867B2 (en) * | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
| US20100186811A1 (en) * | 2008-08-26 | 2010-07-29 | Sixtron Advanced Materials, Inc. | Silicon Carbonitride Antireflective Coating |
| US7951696B2 (en) * | 2008-09-30 | 2011-05-31 | Honeywell International Inc. | Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes |
| US7820532B2 (en) * | 2008-12-29 | 2010-10-26 | Honeywell International Inc. | Methods for simultaneously forming doped regions having different conductivity-determining type element profiles |
| US8518170B2 (en) * | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
| US20100224243A1 (en) * | 2009-03-05 | 2010-09-09 | Applied Materials, Inc. | Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy |
| US20100132775A1 (en) * | 2009-03-05 | 2010-06-03 | Applied Materials, Inc. | Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy |
| KR101145928B1 (ko) * | 2009-03-11 | 2012-05-15 | 엘지전자 주식회사 | 태양 전지 및 태양 전지의 제조 방법 |
| US8324089B2 (en) * | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
| KR20110024639A (ko) * | 2009-09-02 | 2011-03-09 | 엘지이노텍 주식회사 | 도펀트 확산용액, 및 이의 용도 |
| US20110132444A1 (en) | 2010-01-08 | 2011-06-09 | Meier Daniel L | Solar cell including sputtered reflective layer and method of manufacture thereof |
| US8241945B2 (en) * | 2010-02-08 | 2012-08-14 | Suniva, Inc. | Solar cells and methods of fabrication thereof |
| KR101032740B1 (ko) * | 2010-10-05 | 2011-05-06 | 에프알앤디건설(주) | 교량의 교좌장치 |
| SG191045A1 (en) | 2010-12-06 | 2013-08-30 | Shinetsu Chemical Co | Solar cell and solar-cell module |
| SG191044A1 (en) * | 2010-12-06 | 2013-08-30 | Shinetsu Chemical Co | Solar cell and solar-cell module |
| US9362015B2 (en) | 2010-12-16 | 2016-06-07 | The Regents Of The University Of Michigan | Silicon-based solar cell with eutectic composition |
| WO2012083191A2 (en) * | 2010-12-16 | 2012-06-21 | The Regents Of The University Of Michigan | Silicon-based solar cell with eutectic composition |
| US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
| US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
| TW201511296A (zh) | 2013-06-20 | 2015-03-16 | Plant PV | 用於矽太陽能電池之核-殼型鎳粒子金屬化層 |
| USD706224S1 (en) * | 2013-08-01 | 2014-06-03 | Ebara Corporation | Electrical contact for use in a plating apparatus |
| US20160224935A1 (en) * | 2014-07-08 | 2016-08-04 | Rick Burnett | Shipper and Carrier Interaction Optimization Platform |
| US9559642B2 (en) | 2015-01-02 | 2017-01-31 | Logitech Europe, S.A. | Audio delivery system having an improved efficiency and extended operation time between recharges or battery replacements |
| WO2017035103A1 (en) | 2015-08-25 | 2017-03-02 | Plant Pv, Inc | Core-shell, oxidation-resistant particles for low temperature conductive applications |
| US10418497B2 (en) | 2015-08-26 | 2019-09-17 | Hitachi Chemical Co., Ltd. | Silver-bismuth non-contact metallization pastes for silicon solar cells |
| US10000645B2 (en) | 2015-11-24 | 2018-06-19 | PLANT PV, Inc. | Methods of forming solar cells with fired multilayer film stacks |
| CN115274912B (zh) * | 2022-08-01 | 2024-01-30 | 中国电子科技集团公司第四十四研究所 | 高空间分辨率的x射线探测器单元、探测器及其制作方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2998334A (en) | 1958-03-07 | 1961-08-29 | Transitron Electronic Corp | Method of making transistors |
| US3159215A (en) * | 1958-09-23 | 1964-12-01 | California Research Corp | Assisted petroleum recovery by selective combustion in multi-bedded reservoirs |
| AU419791B2 (en) | 1968-06-20 | 1971-12-15 | Matsushita Electric Industrial Co., Ltd | Method of making a switching element |
| NL7013227A (enExample) * | 1970-09-08 | 1972-03-10 | Philips Nv | |
| GB1416964A (en) | 1973-07-09 | 1975-12-10 | Akimov J S | Contact between an electrode metal and a semiconductor |
| US4184897A (en) * | 1978-09-21 | 1980-01-22 | General Electric Company | Droplet migration doping using carrier droplets |
| US4159215A (en) * | 1978-09-21 | 1979-06-26 | General Electric Company | Droplet migration doping using reactive carriers and dopants |
| US4163983A (en) * | 1978-09-28 | 1979-08-07 | General Electric Company | Solid state neuron |
| US4207670A (en) * | 1978-09-28 | 1980-06-17 | General Electric Company | Method for making a solid state neuron |
| US4198247A (en) * | 1978-12-07 | 1980-04-15 | General Electric Company | Sealant films for materials having high intrinsic vapor pressure |
| DE2939541A1 (de) | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleitereigenschaften aufweisendem, mit antimon hochdotiertem silicium |
| JPS59189679A (ja) * | 1983-04-13 | 1984-10-27 | Hitachi Ltd | ダイオ−ド |
| JPS6249676A (ja) | 1985-08-29 | 1987-03-04 | Sharp Corp | 太陽電池 |
| US5258624A (en) | 1988-05-27 | 1993-11-02 | U.S. Philips Corp. | Transferred electron effect device |
| DE3901042A1 (de) | 1989-01-14 | 1990-07-26 | Nukem Gmbh | Verfahren und vorrichtung zur herstellung eines halbleiter-schichtsystems |
| JPH0919118A (ja) | 1995-06-28 | 1997-01-17 | Toshiba Corp | くし形回転電機の回転子の製造方法 |
| US5641362A (en) | 1995-11-22 | 1997-06-24 | Ebara Solar, Inc. | Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell |
| JPH09191118A (ja) | 1996-01-11 | 1997-07-22 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法 |
| US6180869B1 (en) | 1997-05-06 | 2001-01-30 | Ebara Solar, Inc. | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
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2000
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- 2000-11-22 WO PCT/US2000/032257 patent/WO2001041221A1/en not_active Ceased
- 2000-11-22 CN CNB00817914XA patent/CN1260830C/zh not_active Expired - Fee Related
- 2000-11-22 CA CA2392342A patent/CA2392342C/en not_active Expired - Fee Related
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- 2000-11-22 MX MXPA02005186A patent/MXPA02005186A/es not_active Application Discontinuation
- 2000-11-22 BR BR0015803-8A patent/BR0015803A/pt not_active IP Right Cessation
- 2000-11-22 KR KR1020027006600A patent/KR20020066327A/ko not_active Withdrawn
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| US6703295B2 (en) | 2004-03-09 |
| JP2003529207A (ja) | 2003-09-30 |
| CN1415119A (zh) | 2003-04-30 |
| EP1234342A1 (en) | 2002-08-28 |
| KR20020066327A (ko) | 2002-08-14 |
| US6664631B2 (en) | 2003-12-16 |
| AU1798301A (en) | 2001-06-12 |
| CN1260830C (zh) | 2006-06-21 |
| US6632730B1 (en) | 2003-10-14 |
| US20030203603A1 (en) | 2003-10-30 |
| BR0015803A (pt) | 2002-08-13 |
| CA2392342A1 (en) | 2001-06-07 |
| AU780960B2 (en) | 2005-04-28 |
| US6737340B2 (en) | 2004-05-18 |
| US20030003693A1 (en) | 2003-01-02 |
| MXPA02005186A (es) | 2004-05-05 |
| WO2001041221A1 (en) | 2001-06-07 |
| US20030008485A1 (en) | 2003-01-09 |
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