KR20020066327A - 반도체에 셀프 도핑 접점을 형성하는 방법 및 장치 - Google Patents

반도체에 셀프 도핑 접점을 형성하는 방법 및 장치 Download PDF

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Publication number
KR20020066327A
KR20020066327A KR1020027006600A KR20027006600A KR20020066327A KR 20020066327 A KR20020066327 A KR 20020066327A KR 1020027006600 A KR1020027006600 A KR 1020027006600A KR 20027006600 A KR20027006600 A KR 20027006600A KR 20020066327 A KR20020066327 A KR 20020066327A
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South Korea
Prior art keywords
semiconductor
temperature
impurity
region
silicon
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KR1020027006600A
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English (en)
Korean (ko)
Inventor
마이어다니엘엘
데이비스허버트피
가르시아루쓰에이
제스업조이시에이
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에바라 솔라 인코포레이티드
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Publication of KR20020066327A publication Critical patent/KR20020066327A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
KR1020027006600A 1999-11-23 2000-11-22 반도체에 셀프 도핑 접점을 형성하는 방법 및 장치 Withdrawn KR20020066327A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16735899P 1999-11-23 1999-11-23
US60/167,358 1999-11-23
US09/538,034 2000-03-29
US09/538,034 US6632730B1 (en) 1999-11-23 2000-03-29 Method for self-doping contacts to a semiconductor
PCT/US2000/032257 WO2001041221A1 (en) 1999-11-23 2000-11-22 Method and apparatus for self-doping contacts to a semiconductor

Publications (1)

Publication Number Publication Date
KR20020066327A true KR20020066327A (ko) 2002-08-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027006600A Withdrawn KR20020066327A (ko) 1999-11-23 2000-11-22 반도체에 셀프 도핑 접점을 형성하는 방법 및 장치

Country Status (10)

Country Link
US (4) US6632730B1 (enExample)
EP (1) EP1234342A1 (enExample)
JP (1) JP2003529207A (enExample)
KR (1) KR20020066327A (enExample)
CN (1) CN1260830C (enExample)
AU (1) AU780960B2 (enExample)
BR (1) BR0015803A (enExample)
CA (1) CA2392342C (enExample)
MX (1) MXPA02005186A (enExample)
WO (1) WO2001041221A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101032740B1 (ko) * 2010-10-05 2011-05-06 에프알앤디건설(주) 교량의 교좌장치

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Also Published As

Publication number Publication date
US6703295B2 (en) 2004-03-09
AU780960B2 (en) 2005-04-28
JP2003529207A (ja) 2003-09-30
US20030003693A1 (en) 2003-01-02
CA2392342C (en) 2011-01-04
AU1798301A (en) 2001-06-12
US6737340B2 (en) 2004-05-18
US20030203603A1 (en) 2003-10-30
EP1234342A1 (en) 2002-08-28
US20030008485A1 (en) 2003-01-09
WO2001041221A1 (en) 2001-06-07
US6664631B2 (en) 2003-12-16
US6632730B1 (en) 2003-10-14
CN1415119A (zh) 2003-04-30
CN1260830C (zh) 2006-06-21
MXPA02005186A (es) 2004-05-05
BR0015803A (pt) 2002-08-13
CA2392342A1 (en) 2001-06-07

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