BR0015803A - Método para fabricar um contato, e para fabricar um dispositivo semicondutor, dispositivo semicondutor, e, contato para um semicondutor - Google Patents

Método para fabricar um contato, e para fabricar um dispositivo semicondutor, dispositivo semicondutor, e, contato para um semicondutor

Info

Publication number
BR0015803A
BR0015803A BR0015803-8A BR0015803A BR0015803A BR 0015803 A BR0015803 A BR 0015803A BR 0015803 A BR0015803 A BR 0015803A BR 0015803 A BR0015803 A BR 0015803A
Authority
BR
Brazil
Prior art keywords
silicon
silver
temperature
contact
eutectic
Prior art date
Application number
BR0015803-8A
Other languages
English (en)
Inventor
Daniel L Meier
Hubert P Davis
Ruth A Garcia
Joyce A Jessup
Original Assignee
Ebara Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Solar Inc filed Critical Ebara Solar Inc
Publication of BR0015803A publication Critical patent/BR0015803A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

"MéTODO PARA FABRICAR UM CONTATO, E PARA FABRICAR UM DISPOSITIVO SEMICONDUTOR, DISPOSITIVO SEMICONDUTOR, E, CONTATO PARA UM SEMICONDUTOR" A presente invenção provê um sistema e método para criar contatos auto-dopantes para dispositivos de silício nos quais o metal de contato é coberto com uma camada de dopante e sujeito a alta temperatura, por esse meio ligando a prata com o silício e dopando simultaneamente o substrato de silício e formando um contato óhmico de baixa resistência para ele. Um contato negativo auto-dopante pode ser formado de prata não ligada que pode ser aplicada ao substrato de silício tanto borrifando, imprimindo por tela uma pasta ou por evaporação. A prata é coberta com uma camada de dopante. Uma vez aplicada, a prata, substrato e dopante são aquecidos a uma temperatura acima da temperatura eutética de Ag-Si (mas abaixo do ponto de derretimento de silício). A prata se liquefaz mais do que uma proporção eutética do substrato de silício. A temperatura é então diminuída para a temperatura eutética. Quando a temperatura é diminuída, o silício fundido se reforma por epitaxia de fase líquida enquanto assim fazendo, átomos de dopante são incorporados no arranjo atómico de silício reformado. Uma vez que a temperatura cai abaixo da temperatura eutética de prata-silício, o silício que já não foi incorporado no substrato por re-crescimento epitaxial, forma uma liga de fase sólida com a prata. Esta liga de prata e silício é o material de contato final, e é composto de proporções eutéticas de silício e prata. Sob proporções eutéticas, há significativamente mais prata do que silício no material de contato final, por esse meio assegurando boa condutividade elétrica do material de contato final.
BR0015803-8A 1999-11-23 2000-11-22 Método para fabricar um contato, e para fabricar um dispositivo semicondutor, dispositivo semicondutor, e, contato para um semicondutor BR0015803A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16735899P 1999-11-23 1999-11-23
US09/538,034 US6632730B1 (en) 1999-11-23 2000-03-29 Method for self-doping contacts to a semiconductor
PCT/US2000/032257 WO2001041221A1 (en) 1999-11-23 2000-11-22 Method and apparatus for self-doping contacts to a semiconductor

Publications (1)

Publication Number Publication Date
BR0015803A true BR0015803A (pt) 2002-08-13

Family

ID=26863088

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0015803-8A BR0015803A (pt) 1999-11-23 2000-11-22 Método para fabricar um contato, e para fabricar um dispositivo semicondutor, dispositivo semicondutor, e, contato para um semicondutor

Country Status (10)

Country Link
US (4) US6632730B1 (pt)
EP (1) EP1234342A1 (pt)
JP (1) JP2003529207A (pt)
KR (1) KR20020066327A (pt)
CN (1) CN1260830C (pt)
AU (1) AU780960B2 (pt)
BR (1) BR0015803A (pt)
CA (1) CA2392342C (pt)
MX (1) MXPA02005186A (pt)
WO (1) WO2001041221A1 (pt)

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Also Published As

Publication number Publication date
US20030003693A1 (en) 2003-01-02
AU780960B2 (en) 2005-04-28
US6632730B1 (en) 2003-10-14
KR20020066327A (ko) 2002-08-14
US6737340B2 (en) 2004-05-18
CA2392342A1 (en) 2001-06-07
CN1415119A (zh) 2003-04-30
AU1798301A (en) 2001-06-12
CN1260830C (zh) 2006-06-21
US6703295B2 (en) 2004-03-09
WO2001041221A1 (en) 2001-06-07
EP1234342A1 (en) 2002-08-28
US6664631B2 (en) 2003-12-16
US20030008485A1 (en) 2003-01-09
US20030203603A1 (en) 2003-10-30
MXPA02005186A (es) 2004-05-05
JP2003529207A (ja) 2003-09-30
CA2392342C (en) 2011-01-04

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