MX363412B - Fuente de evaporacion por arco. - Google Patents

Fuente de evaporacion por arco.

Info

Publication number
MX363412B
MX363412B MX2013009737A MX2013009737A MX363412B MX 363412 B MX363412 B MX 363412B MX 2013009737 A MX2013009737 A MX 2013009737A MX 2013009737 A MX2013009737 A MX 2013009737A MX 363412 B MX363412 B MX 363412B
Authority
MX
Mexico
Prior art keywords
target
evaporation source
magnet
arc evaporation
rear surface
Prior art date
Application number
MX2013009737A
Other languages
English (en)
Other versions
MX2013009737A (es
Inventor
Tanifuji Shinichi
Yamamoto Kenji
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2011118267A external-priority patent/JP5081315B2/ja
Priority claimed from JP2011180544A external-priority patent/JP5081320B2/ja
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Publication of MX2013009737A publication Critical patent/MX2013009737A/es
Publication of MX363412B publication Critical patent/MX363412B/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Spectroscopy & Molecular Physics (AREA)

Abstract

Una fuente de evaporación por arco (101) de acuerdo con una realización de la presente invención comprende: un imán circunferencial con forma de disco (103) que está dispuesto de manera que rodea la circunferencia externa de una diana (102) a lo largo de una dirección en la que la dirección de magnetización se hace paralela a la superficie delantera de la diana; y un imán de la superficie trasera (104) que está dispuesto en el lado de la superficie trasera de la diana (102) a lo largo de una dirección en la que la dirección de magnetización se hace perpendicular a la superficie delantera de la diana. El polo magnético del imán circunferencial (103) en el lado interno en la dirección radial y el polo magnético del imán de la superficie trasera (104) en el lado de la diana (102) tienen la misma polaridad entre sí.
MX2013009737A 2011-02-23 2012-02-23 Fuente de evaporacion por arco. MX363412B (es)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2011037095 2011-02-23
JP2011037094 2011-02-23
JP2011097162 2011-04-25
JP2011118267A JP5081315B2 (ja) 2011-02-23 2011-05-26 アーク式蒸発源
JP2011180544A JP5081320B2 (ja) 2011-02-23 2011-08-22 アーク式蒸発源
PCT/JP2012/054451 WO2012115203A1 (ja) 2011-02-23 2012-02-23 アーク式蒸発源

Publications (2)

Publication Number Publication Date
MX2013009737A MX2013009737A (es) 2014-01-31
MX363412B true MX363412B (es) 2019-03-22

Family

ID=49111783

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2013009737A MX363412B (es) 2011-02-23 2012-02-23 Fuente de evaporacion por arco.

Country Status (10)

Country Link
US (2) US20130327642A1 (es)
EP (1) EP2679702B1 (es)
KR (4) KR20150103382A (es)
CN (1) CN103392026B (es)
BR (1) BR112013021546B1 (es)
CA (1) CA2824749C (es)
IL (2) IL227683B (es)
MX (1) MX363412B (es)
PT (1) PT2679702T (es)
WO (1) WO2012115203A1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5946337B2 (ja) 2012-06-20 2016-07-06 株式会社神戸製鋼所 アーク式蒸発源
JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
JP6302150B1 (ja) * 2017-08-21 2018-03-28 堺ディスプレイプロダクト株式会社 蒸着装置、蒸着方法及び有機ｅｌ表示装置の製造方法
HUE063280T2 (hu) * 2019-02-28 2024-01-28 Oerlikon Surface Solutions Ag Pfaeffikon Impulzusos katódos íves leválasztás

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2537210B2 (ja) * 1986-09-18 1996-09-25 株式会社東芝 高密度プラズマの発生装置
JPH02232364A (ja) * 1989-03-02 1990-09-14 Kobe Steel Ltd 真空アーク蒸着装置
JPH04236770A (ja) * 1991-01-17 1992-08-25 Kobe Steel Ltd 真空アーク蒸着のアークスポットの制御方法及び蒸発源
CN1103677A (zh) * 1994-09-05 1995-06-14 北京电炉厂 大面积可控电弧蒸发源
JP3287163B2 (ja) 1995-01-23 2002-05-27 日新電機株式会社 アーク式蒸発源
KR970002891A (ko) * 1995-06-28 1997-01-28 배순훈 브이씨알 헤드의 박막 증착용 스퍼터링 장치
JPH11269634A (ja) 1998-03-20 1999-10-05 Kobe Steel Ltd 真空アーク蒸発源
TWI242049B (en) * 1999-01-14 2005-10-21 Kobe Steel Ltd Vacuum arc evaporation source and vacuum arc vapor deposition apparatus
ES2228830T3 (es) 2001-03-27 2005-04-16 Fundacion Tekniker Evaporador de arco con guia magnetica intensa para blancos de superficie amplia.
JP2003342717A (ja) * 2002-05-27 2003-12-03 Mitsubishi Materials Kobe Tools Corp 真空アーク方式蒸着装置及びこれを用いた成膜方法
JP4548666B2 (ja) * 2005-08-26 2010-09-22 株式会社不二越 アーク式イオンプレーティング装置用蒸発源
EP2018653B1 (de) * 2006-05-16 2014-08-06 Oerlikon Trading AG, Trübbach Arcquelle und magnetanordnung
JP2009024230A (ja) * 2007-07-20 2009-02-05 Kobe Steel Ltd スパッタリング装置
WO2009066633A1 (ja) * 2007-11-21 2009-05-28 Kabushiki Kaisha Kobe Seiko Sho アークイオンプレーティング装置用の蒸発源及びアークイオンプレーティング装置
JP2009144236A (ja) 2007-11-21 2009-07-02 Kobe Steel Ltd アークイオンプレーティング装置用の蒸発源及びアークイオンプレーティング装置
US8016982B2 (en) 2007-11-30 2011-09-13 Panasonic Corporation Sputtering apparatus and sputtering method
JP4526582B2 (ja) * 2007-11-30 2010-08-18 パナソニック株式会社 スパッタリング装置およびスパッタリング方法
JP5649308B2 (ja) 2009-04-28 2015-01-07 株式会社神戸製鋼所 成膜速度が速いアーク式蒸発源及びこのアーク式蒸発源を用いた皮膜の製造方法

Also Published As

Publication number Publication date
IL227683B (en) 2018-03-29
US10982318B2 (en) 2021-04-20
EP2679702A4 (en) 2016-03-02
WO2012115203A1 (ja) 2012-08-30
EP2679702B1 (en) 2020-01-22
CA2824749C (en) 2016-04-26
US20180371605A1 (en) 2018-12-27
BR112013021546B1 (pt) 2020-10-27
IL249382A0 (en) 2017-02-28
BR112013021546A2 (pt) 2016-11-01
KR20150103382A (ko) 2015-09-10
KR20130121955A (ko) 2013-11-06
EP2679702A1 (en) 2014-01-01
CN103392026A (zh) 2013-11-13
IL227683A0 (en) 2013-09-30
MX2013009737A (es) 2014-01-31
KR20150103383A (ko) 2015-09-10
CN103392026B (zh) 2016-04-06
IL249382B (en) 2018-01-31
KR20150103384A (ko) 2015-09-10
PT2679702T (pt) 2020-02-14
US20130327642A1 (en) 2013-12-12
CA2824749A1 (en) 2012-08-30

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