MX2009001345A - Elemento y metodo de almacenamiento de estado solido. - Google Patents
Elemento y metodo de almacenamiento de estado solido.Info
- Publication number
- MX2009001345A MX2009001345A MX2009001345A MX2009001345A MX2009001345A MX 2009001345 A MX2009001345 A MX 2009001345A MX 2009001345 A MX2009001345 A MX 2009001345A MX 2009001345 A MX2009001345 A MX 2009001345A MX 2009001345 A MX2009001345 A MX 2009001345A
- Authority
- MX
- Mexico
- Prior art keywords
- flash memory
- memory cells
- solid state
- storage element
- state storage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Un método y un sistema para almacenar y recuperar datos utilizando dispositivos de memoria Flash. Un sistema de ejemplo incluye un aparato dentro de la configuración de la memoria Flash. La configuración de la memoria Flash incluye una pluralidad de celdas de memoria, en donde cada celda de memoria tiene una capacidad de almacenamiento de carga para utilizarla en la implementación de almacenamiento digital. El aparato incluye una configuración del proceso configurado para accesar a cada una de las celdas de memoria en una operación de escritura y una operación de lectura. El aparato también incluye un set de instrucciones para dar instrucciones al procesador para imponer niveles de carga para definir la pluralidad de los valores de datos para cada una de las celdas de memoria. Los niveles de carga de ejecución son programables movibles respecto a la capacidad de almacenamiento de carga.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83562406P | 2006-08-05 | 2006-08-05 | |
US84311706P | 2006-09-09 | 2006-09-09 | |
US86395006P | 2006-11-01 | 2006-11-01 | |
US88692607P | 2007-01-27 | 2007-01-27 | |
PCT/US2007/075293 WO2008019347A2 (en) | 2006-08-05 | 2007-08-06 | Solid state storage element and method |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2009001345A true MX2009001345A (es) | 2009-07-17 |
Family
ID=39033607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2009001345A MX2009001345A (es) | 2006-08-05 | 2007-08-06 | Elemento y metodo de almacenamiento de estado solido. |
Country Status (8)
Country | Link |
---|---|
US (4) | US7877564B2 (es) |
EP (1) | EP2052389A4 (es) |
JP (3) | JP5047288B2 (es) |
KR (2) | KR101266594B1 (es) |
CN (1) | CN101523504B (es) |
CA (1) | CA2660087C (es) |
MX (1) | MX2009001345A (es) |
WO (1) | WO2008019347A2 (es) |
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-
2007
- 2007-08-06 MX MX2009001345A patent/MX2009001345A/es active IP Right Grant
- 2007-08-06 CN CN200780037197.4A patent/CN101523504B/zh active Active
- 2007-08-06 WO PCT/US2007/075293 patent/WO2008019347A2/en active Application Filing
- 2007-08-06 KR KR1020117028606A patent/KR101266594B1/ko active IP Right Grant
- 2007-08-06 JP JP2009523937A patent/JP5047288B2/ja active Active
- 2007-08-06 US US11/834,565 patent/US7877564B2/en not_active Expired - Fee Related
- 2007-08-06 EP EP20070813821 patent/EP2052389A4/en not_active Ceased
- 2007-08-06 CA CA2660087A patent/CA2660087C/en active Active
-
2009
- 2009-03-05 KR KR20097004626A patent/KR101160107B1/ko active IP Right Grant
-
2010
- 2010-12-21 US US12/975,153 patent/US8219773B2/en active Active
-
2011
- 2011-12-20 JP JP2011279012A patent/JP5496993B2/ja active Active
-
2012
- 2012-07-06 US US13/543,191 patent/US8650376B2/en active Active
-
2014
- 2014-01-03 US US14/147,453 patent/US8972674B2/en active Active
- 2014-03-04 JP JP2014041912A patent/JP6313073B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US8219773B2 (en) | 2012-07-10 |
JP5496993B2 (ja) | 2014-05-21 |
US7877564B2 (en) | 2011-01-25 |
JP2010500697A (ja) | 2010-01-07 |
EP2052389A2 (en) | 2009-04-29 |
JP2014179077A (ja) | 2014-09-25 |
JP5047288B2 (ja) | 2012-10-10 |
US8972674B2 (en) | 2015-03-03 |
US8650376B2 (en) | 2014-02-11 |
WO2008019347A3 (en) | 2008-08-14 |
CA2660087C (en) | 2014-09-23 |
US20080162791A1 (en) | 2008-07-03 |
CN101523504A (zh) | 2009-09-02 |
US20110093761A1 (en) | 2011-04-21 |
KR101266594B1 (ko) | 2013-05-22 |
CN101523504B (zh) | 2014-01-29 |
EP2052389A4 (en) | 2009-08-19 |
CA2660087A1 (en) | 2008-02-14 |
KR20120007544A (ko) | 2012-01-20 |
KR20090037501A (ko) | 2009-04-15 |
JP2012109012A (ja) | 2012-06-07 |
KR101160107B1 (ko) | 2012-06-26 |
US20140189219A1 (en) | 2014-07-03 |
WO2008019347A2 (en) | 2008-02-14 |
JP6313073B2 (ja) | 2018-04-18 |
US20120278684A1 (en) | 2012-11-01 |
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