DE602005014567D1 - Speicherbaustein und verfahren zur bereitstellung eines auf einer mittleren schwelle basierenden auffrischmechanismus - Google Patents
Speicherbaustein und verfahren zur bereitstellung eines auf einer mittleren schwelle basierenden auffrischmechanismusInfo
- Publication number
- DE602005014567D1 DE602005014567D1 DE602005014567T DE602005014567T DE602005014567D1 DE 602005014567 D1 DE602005014567 D1 DE 602005014567D1 DE 602005014567 T DE602005014567 T DE 602005014567T DE 602005014567 T DE602005014567 T DE 602005014567T DE 602005014567 D1 DE602005014567 D1 DE 602005014567D1
- Authority
- DE
- Germany
- Prior art keywords
- coupled
- bit line
- refresh
- providing
- average level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
Landscapes
- Read Only Memory (AREA)
- Dram (AREA)
- Devices For Executing Special Programs (AREA)
- Computer And Data Communications (AREA)
- Cable Transmission Systems, Equalization Of Radio And Reduction Of Echo (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04105203 | 2004-10-21 | ||
PCT/IB2005/053393 WO2006043225A1 (en) | 2004-10-21 | 2005-10-17 | Memory device and method providing an average threshold based refresh mechanism |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005014567D1 true DE602005014567D1 (de) | 2009-07-02 |
Family
ID=35595758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005014567T Active DE602005014567D1 (de) | 2004-10-21 | 2005-10-17 | Speicherbaustein und verfahren zur bereitstellung eines auf einer mittleren schwelle basierenden auffrischmechanismus |
Country Status (8)
Country | Link |
---|---|
US (1) | US7483324B2 (de) |
EP (1) | EP1807841B1 (de) |
JP (1) | JP2008525924A (de) |
KR (1) | KR20070084240A (de) |
CN (1) | CN101044578B (de) |
AT (1) | ATE431958T1 (de) |
DE (1) | DE602005014567D1 (de) |
WO (1) | WO2006043225A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7894282B2 (en) * | 2005-11-29 | 2011-02-22 | Samsung Electronics Co., Ltd. | Dynamic random access memory device and method of determining refresh cycle thereof |
US7447096B2 (en) * | 2006-05-05 | 2008-11-04 | Honeywell International Inc. | Method for refreshing a non-volatile memory |
MX2009001345A (es) | 2006-08-05 | 2009-07-17 | Benhov Gmbh Llc | Elemento y metodo de almacenamiento de estado solido. |
US7577036B2 (en) | 2007-05-02 | 2009-08-18 | Micron Technology, Inc. | Non-volatile multilevel memory cells with data read of reference cells |
US8060798B2 (en) * | 2007-07-19 | 2011-11-15 | Micron Technology, Inc. | Refresh of non-volatile memory cells based on fatigue conditions |
KR101802448B1 (ko) | 2010-10-12 | 2017-11-28 | 삼성전자주식회사 | 상변화 메모리 장치 및 상변화 메모리 장치의 리라이트 동작 방법 |
US9159396B2 (en) * | 2011-06-30 | 2015-10-13 | Lattice Semiconductor Corporation | Mechanism for facilitating fine-grained self-refresh control for dynamic memory devices |
KR102148389B1 (ko) | 2014-06-11 | 2020-08-27 | 삼성전자주식회사 | 오버 라이트 동작을 갖는 메모리 시스템 및 그에 따른 동작 제어방법 |
GB2527318A (en) | 2014-06-17 | 2015-12-23 | Ibm | Estimation of level-thresholds for memory cells |
US9852795B2 (en) | 2015-09-24 | 2017-12-26 | Samsung Electronics Co., Ltd. | Methods of operating nonvolatile memory devices, and memory systems including nonvolatile memory devices |
DE112018004191B4 (de) * | 2017-08-17 | 2021-02-18 | Syntiant | Digital unterstützte flash-auffrischung |
US10446246B2 (en) * | 2018-03-14 | 2019-10-15 | Silicon Storage Technology, Inc. | Method and apparatus for data refresh for analog non-volatile memory in deep learning neural network |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2181284A (en) * | 1936-08-31 | 1939-11-28 | Eastman Oil Well Survey Co | Spudding bit |
US4170058A (en) * | 1976-07-26 | 1979-10-09 | Reliance Electric Co. | Method of adjusting end play |
US4309694A (en) | 1980-03-27 | 1982-01-05 | Bell Telephone Laboratories, Incorporated | Zero disparity coding system |
US5532962A (en) | 1992-05-20 | 1996-07-02 | Sandisk Corporation | Soft errors handling in EEPROM devices |
US6490200B2 (en) * | 2000-03-27 | 2002-12-03 | Sandisk Corporation | Non-volatile memory with improved sensing and method therefor |
FR2816750B1 (fr) | 2000-11-15 | 2003-01-24 | St Microelectronics Sa | Memoire flash comprenant des moyens de controle de la tension de seuil de cellules memoire |
TW559814B (en) | 2001-05-31 | 2003-11-01 | Semiconductor Energy Lab | Nonvolatile memory and method of driving the same |
CN1303612C (zh) * | 2001-08-01 | 2007-03-07 | 联华电子股份有限公司 | 选择性存储器刷新电路与刷新方法 |
JP4459495B2 (ja) * | 2001-12-13 | 2010-04-28 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置のリフレッシュ制御方法、及び該制御方法を有する半導体記憶装置 |
US6621739B2 (en) * | 2002-01-18 | 2003-09-16 | Sandisk Corporation | Reducing the effects of noise in non-volatile memories through multiple reads |
US6735114B1 (en) | 2003-02-04 | 2004-05-11 | Advanced Micro Devices, Inc. | Method of improving dynamic reference tracking for flash memory unit |
JP2007534105A (ja) | 2004-04-22 | 2007-11-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電子回路、データ読み出し方法、符号化回路、データワード符号化方法 |
-
2005
- 2005-10-17 DE DE602005014567T patent/DE602005014567D1/de active Active
- 2005-10-17 US US11/577,711 patent/US7483324B2/en active Active
- 2005-10-17 AT AT05791933T patent/ATE431958T1/de not_active IP Right Cessation
- 2005-10-17 KR KR1020077011029A patent/KR20070084240A/ko not_active Application Discontinuation
- 2005-10-17 WO PCT/IB2005/053393 patent/WO2006043225A1/en active Application Filing
- 2005-10-17 EP EP05791933A patent/EP1807841B1/de active Active
- 2005-10-17 CN CN2005800361297A patent/CN101044578B/zh active Active
- 2005-10-17 JP JP2007537440A patent/JP2008525924A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2006043225A1 (en) | 2006-04-27 |
WO2006043225B1 (en) | 2006-07-27 |
CN101044578A (zh) | 2007-09-26 |
CN101044578B (zh) | 2011-12-07 |
EP1807841A1 (de) | 2007-07-18 |
JP2008525924A (ja) | 2008-07-17 |
US20080062769A1 (en) | 2008-03-13 |
ATE431958T1 (de) | 2009-06-15 |
US7483324B2 (en) | 2009-01-27 |
EP1807841B1 (de) | 2009-05-20 |
KR20070084240A (ko) | 2007-08-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |