MX168017B - Composiciones dielectricos adecuadas para formar un patron con luz, metodo para su formacion y uso - Google Patents

Composiciones dielectricos adecuadas para formar un patron con luz, metodo para su formacion y uso

Info

Publication number
MX168017B
MX168017B MX202557A MX20255784A MX168017B MX 168017 B MX168017 B MX 168017B MX 202557 A MX202557 A MX 202557A MX 20255784 A MX20255784 A MX 20255784A MX 168017 B MX168017 B MX 168017B
Authority
MX
Mexico
Prior art keywords
pattern
formation
light
compositions suitable
percent
Prior art date
Application number
MX202557A
Other languages
English (en)
Inventor
Gary Charles Davis
Original Assignee
Microsi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsi Inc filed Critical Microsi Inc
Publication of MX168017B publication Critical patent/MX168017B/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S522/00—Synthetic resins or natural rubbers -- part of the class 520 series
    • Y10S522/904—Monomer or polymer contains initiating group
    • Y10S522/905—Benzophenone group

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

La presente invención se refiere a una composición fotosensible de silicón-poli-amida de ácido, caracterizada porque comrpende, en peso: A) hasta 95 por ciento de un solvente orgánico inerte; B) cuando menos 5 por ciento de una silicón-poliamida aromática de ácido modificada, que consiste esencialmente de unidades químicamente combinadas de las fórmulas: C) una cantidad efectiva de sensibilizador, en donde Q es un radical monovalente seleccionado de grupos carboxi y acrilato-amida de la fórmula: (R6)2C igual a C-C-C-O-R8N-C.
MX202557A 1983-08-29 1984-08-29 Composiciones dielectricos adecuadas para formar un patron con luz, metodo para su formacion y uso MX168017B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/527,581 US4515887A (en) 1983-08-29 1983-08-29 Photopatternable dielectric compositions, method for making and use

Publications (1)

Publication Number Publication Date
MX168017B true MX168017B (es) 1993-04-28

Family

ID=24102051

Family Applications (1)

Application Number Title Priority Date Filing Date
MX202557A MX168017B (es) 1983-08-29 1984-08-29 Composiciones dielectricos adecuadas para formar un patron con luz, metodo para su formacion y uso

Country Status (9)

Country Link
US (1) US4515887A (es)
JP (1) JPH0797214B2 (es)
KR (1) KR900008949B1 (es)
DE (1) DE3424216C2 (es)
FR (1) FR2555597B1 (es)
GB (1) GB2145728B (es)
IE (1) IE55344B1 (es)
MX (1) MX168017B (es)
NL (1) NL8401374A (es)

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US4837126A (en) * 1985-06-07 1989-06-06 W. R. Grace & Co. Polymer composition for photoresist application
US4717643A (en) * 1985-08-06 1988-01-05 Hercules Incorporated No thermal cure dry film solder mask
JPS62180360A (ja) * 1986-02-03 1987-08-07 ゼネラル・エレクトリツク・カンパニイ 光パタ−ン化可能なポリイミド組成物とその製法
US4782009A (en) * 1987-04-03 1988-11-01 General Electric Company Method of coating and imaging photopatternable silicone polyamic acid
US5270431A (en) * 1987-07-23 1993-12-14 Basf Aktiengesellschaft Preparation of oligomeric or polymeric radiation-reactive intermediates for solvent-structured layers
JP2626696B2 (ja) * 1988-04-11 1997-07-02 チッソ株式会社 感光性重合体
JPH01283554A (ja) * 1988-05-11 1989-11-15 Hitachi Ltd 耐熱感光性重合体組成物
EP0373952B1 (en) * 1988-12-16 1995-02-08 Hitachi Chemical Co., Ltd. Photosensitive resin composition and photosensitive element using the same
DE69030643T2 (de) * 1989-11-30 1997-09-25 Sumitomo Bakelite Co Lichtempfindliche Harzzusammensetzung und ihre Verwendung zur Herstellung eines Halbleiterapparats
JP2516276B2 (ja) * 1990-09-12 1996-07-24 住友ベークライト株式会社 感光性樹脂組成物
JPH04120542A (ja) * 1990-09-12 1992-04-21 Hitachi Ltd 感光性耐熱重合体組成物
JPH0457376U (es) * 1990-09-20 1992-05-18
JP2890213B2 (ja) * 1991-02-25 1999-05-10 チッソ株式会社 感光性重合体組成物及びパターンの形成方法
JP2546940B2 (ja) * 1991-11-06 1996-10-23 住友ベークライト株式会社 感光性樹脂組成物
JP2557331B2 (ja) * 1992-06-24 1996-11-27 東芝ケミカル株式会社 感光性ポリイミド組成物
JP3211108B2 (ja) * 1992-06-25 2001-09-25 チッソ株式会社 感光性樹脂組成物
JP2787531B2 (ja) * 1993-02-17 1998-08-20 信越化学工業株式会社 感光性樹脂組成物及び電子部品用保護膜
EP0622682B1 (en) * 1993-04-28 1998-03-04 Hitachi Chemical Co., Ltd. Photosensitive resin composition
US5616448A (en) * 1995-01-27 1997-04-01 Shin-Etsu Chemical Co., Ltd. Photosensitive resin composition and a process for forming a patterned polyimide film using the same
CN1061058C (zh) * 1996-01-09 2001-01-24 河北工业大学 耐热光敏聚酰亚胺
US5856065A (en) * 1996-03-27 1999-01-05 Olin Microelectronic Chemicals, Inc. Negative working photoresist composition based on polyimide primers
US5914354A (en) * 1996-08-12 1999-06-22 Shin-Etsu Chemical Co., Ltd. Radiation-sensitive resin composition
US6010825A (en) * 1997-09-11 2000-01-04 Olin Microelectronics Chemicals, Inc. Negatively acting photoresist composition based on polyimide precursors
DE69934960T2 (de) * 1998-10-30 2007-12-06 Hitachi Chemical Dupont Microsystems Ltd. Tetracarbonsäuredianhydrid, Derivat und Herstellung davon, Polyimidvorläufer, Polyimid, Harzzusammensetzung, photoempfindliche Harzzusammensetzung, Verfahren zur Erzeugung von Prägemustern und elektronisches Bauteil
US6342333B1 (en) 1999-09-23 2002-01-29 Hitachi Chemical Dupont Microsystems, L.L.C. Photosensitive resin composition, patterning method, and electronic components
KR100490402B1 (ko) * 2002-04-16 2005-05-17 삼성전자주식회사 유기 감광체용 오버코트 형성용 조성물 및 이로부터형성된 오버코트층을 채용한 유기 감광체
KR100453046B1 (ko) * 2002-04-16 2004-10-15 삼성전자주식회사 유기 감광체용 오버코트 형성용 조성물 및 이로부터형성된 오버코트층을 채용한 유기 감광체
JP4961972B2 (ja) * 2006-03-09 2012-06-27 Ｊｎｃ株式会社 絶縁層形成用組成物および絶縁膜
KR102064297B1 (ko) 2017-02-16 2020-01-09 삼성에스디아이 주식회사 감광성 수지 조성물, 이를 이용한 블랙 화소 격벽층 및 디스플레이 장치
KR102087261B1 (ko) * 2017-02-16 2020-03-10 삼성에스디아이 주식회사 감광성 수지 조성물, 이를 이용한 블랙 화소 격벽층 및 디스플레이 장치

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Also Published As

Publication number Publication date
GB2145728A (en) 1985-04-03
DE3424216C2 (de) 1993-10-21
GB2145728B (en) 1987-07-01
IE55344B1 (en) 1990-08-15
JPH0797214B2 (ja) 1995-10-18
FR2555597B1 (fr) 1987-08-07
FR2555597A1 (fr) 1985-05-31
JPS60100143A (ja) 1985-06-04
IE840746L (en) 1985-02-28
US4515887A (en) 1985-05-07
KR850001797A (ko) 1985-04-01
GB8410771D0 (en) 1984-06-06
KR900008949B1 (ko) 1990-12-15
DE3424216A1 (de) 1985-03-07
NL8401374A (nl) 1985-03-18

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