LU66201A1 - - Google Patents

Info

Publication number
LU66201A1
LU66201A1 LU66201A LU66201DA LU66201A1 LU 66201 A1 LU66201 A1 LU 66201A1 LU 66201 A LU66201 A LU 66201A LU 66201D A LU66201D A LU 66201DA LU 66201 A1 LU66201 A1 LU 66201A1
Authority
LU
Luxembourg
Application number
LU66201A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712148896 external-priority patent/DE2148896C3/de
Application filed filed Critical
Publication of LU66201A1 publication Critical patent/LU66201A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356086—Bistable circuits with additional means for controlling the main nodes
    • H03K3/356095—Bistable circuits with additional means for controlling the main nodes with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
LU66201A 1971-09-30 1972-09-29 LU66201A1 (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19712148896 DE2148896C3 (de) 1971-09-30 Halbleiterspeicher mit Ein-Transistor-Speicherelementen und mit Flipflop-Schaltung zur Informationsbewertung und -regenerierung und Verfahren zum Betrieb dieses Speichers
DE2409058A DE2409058A1 (de) 1971-09-30 1974-02-25 Regenerierschaltung fuer binaersignale nach art eines getasteten flipflops und verfahren zu deren betrieb

Publications (1)

Publication Number Publication Date
LU66201A1 true LU66201A1 (xx) 1973-04-02

Family

ID=62567065

Family Applications (1)

Application Number Title Priority Date Filing Date
LU66201A LU66201A1 (xx) 1971-09-30 1972-09-29

Country Status (9)

Country Link
US (1) US3774176A (xx)
JP (2) JPS5516342B2 (xx)
BE (1) BE789500A (xx)
DE (1) DE2409058A1 (xx)
FR (1) FR2154683B1 (xx)
GB (1) GB1409910A (xx)
IT (1) IT968421B (xx)
LU (1) LU66201A1 (xx)
NL (1) NL7213087A (xx)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT335777B (de) * 1972-12-19 1977-03-25 Siemens Ag Regenerierschaltung fur binarsignale nach art eines getasteten flipflops
GB1401262A (en) * 1973-02-23 1975-07-16 Ibm Data storage apparatus
DE2309192C3 (de) * 1973-02-23 1975-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung
US3838404A (en) * 1973-05-17 1974-09-24 Teletype Corp Random access memory system and cell
FR2239737B1 (xx) * 1973-08-02 1980-12-05 Texas Instruments Inc
US3940747A (en) * 1973-08-02 1976-02-24 Texas Instruments Incorporated High density, high speed random access read-write memory
JPS5080736A (xx) * 1973-11-14 1975-07-01
JPS5081741A (xx) * 1973-11-22 1975-07-02
JPS5721795B2 (xx) * 1973-12-06 1982-05-10
JPS5088944A (xx) * 1973-12-10 1975-07-17
US3882326A (en) * 1973-12-26 1975-05-06 Ibm Differential amplifier for sensing small signals
US3836894A (en) * 1974-01-22 1974-09-17 Westinghouse Electric Corp Mnos/sos random access memory
JPS50122134A (xx) * 1974-03-06 1975-09-25
US3949381A (en) * 1974-07-23 1976-04-06 International Business Machines Corporation Differential charge transfer sense amplifier
US3979603A (en) * 1974-08-22 1976-09-07 Texas Instruments Incorporated Regenerative charge detector for charged coupled devices
GB1523752A (en) * 1974-08-28 1978-09-06 Siemens Ag Dynamic semiconductor data stores
DE2454427C2 (de) * 1974-11-16 1982-04-29 Ibm Deutschland Gmbh, 7000 Stuttgart Assoziativspeicher
US3965460A (en) * 1975-01-02 1976-06-22 Motorola, Inc. MOS speed-up circuit
US3938108A (en) * 1975-02-03 1976-02-10 Intel Corporation Erasable programmable read-only memory
US4004284A (en) * 1975-03-05 1977-01-18 Teletype Corporation Binary voltage-differential sensing circuits, and sense/refresh amplifier circuits for random-access memories
US3976895A (en) * 1975-03-18 1976-08-24 Bell Telephone Laboratories, Incorporated Low power detector circuit
US3983413A (en) * 1975-05-02 1976-09-28 Fairchild Camera And Instrument Corporation Balanced differential capacitively decoupled charge sensor
US3992637A (en) * 1975-05-21 1976-11-16 Ibm Corporation Unclocked sense ampllifier
US3993917A (en) * 1975-05-29 1976-11-23 International Business Machines Corporation Parameter independent FET sense amplifier
US4021682A (en) * 1975-06-30 1977-05-03 Honeywell Information Systems, Inc. Charge detectors for CCD registers
US3983545A (en) * 1975-06-30 1976-09-28 International Business Machines Corporation Random access memory employing single ended sense latch for one device cell
DE2634089C3 (de) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Schaltungsanordnung zum Erfassen schwacher Signale
JPS5228824A (en) * 1975-08-29 1977-03-04 Toshiba Corp Multiple storage unit
DE2646245A1 (de) * 1975-10-28 1977-05-05 Motorola Inc Speicherschaltung
US4010453A (en) * 1975-12-03 1977-03-01 International Business Machines Corporation Stored charge differential sense amplifier
US4039861A (en) * 1976-02-09 1977-08-02 International Business Machines Corporation Cross-coupled charge transfer sense amplifier circuits
JPS5922316B2 (ja) * 1976-02-24 1984-05-25 株式会社東芝 ダイナミツクメモリ装置
JPS52116120A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Memory
DE2623219B2 (de) * 1976-05-24 1978-10-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betreiben einer Leseverstärkerschaltung für einen dynamischen MOS-Speicher und Anordnung zur Durchführung dieses Verfahrens
DE2630797C2 (de) * 1976-07-08 1978-08-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind
JPS5399736A (en) * 1977-02-10 1978-08-31 Toshiba Corp Semiconductor memory unit
US4123799A (en) * 1977-09-19 1978-10-31 Motorola, Inc. High speed IFGET sense amplifier/latch
JPS56110252A (en) * 1980-02-05 1981-09-01 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
EP0052101A1 (en) * 1980-06-02 1982-05-26 Mostek Corporation Shared quiet line flip-flop
JPS60191499A (ja) * 1984-03-09 1985-09-28 Toshiba Corp ダイナミツク型ランダムアクセスメモリ
JPS6155299U (xx) * 1985-05-10 1986-04-14
ATE73255T1 (de) * 1986-11-18 1992-03-15 Siemens Ag Digitalverstaerkeranordnung in integrierten schaltungen.
JPH0684359A (ja) * 1993-08-13 1994-03-25 Hitachi Ltd 半導体メモリ
EP0747903B1 (en) * 1995-04-28 2002-04-10 STMicroelectronics S.r.l. Reading circuit for memory cells devices having a low supply voltage
JP3741053B2 (ja) * 2002-02-18 2006-02-01 ソニー株式会社 画像処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3588537A (en) * 1969-05-05 1971-06-28 Shell Oil Co Digital differential circuit means
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage
US3514765A (en) * 1969-05-23 1970-05-26 Shell Oil Co Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
US3651492A (en) * 1970-11-02 1972-03-21 Ncr Co Nonvolatile memory cell

Also Published As

Publication number Publication date
US3774176A (en) 1973-11-20
DE2148896B2 (de) 1975-01-23
BE789500A (fr) 1973-03-29
DE2148896A1 (de) 1973-04-12
DE2409058A1 (de) 1975-09-04
GB1409910A (en) 1975-10-15
IT968421B (it) 1974-03-20
JPS5516342B2 (xx) 1980-05-01
JPS50120549A (xx) 1975-09-20
NL7213087A (xx) 1973-04-03
JPS4873031A (xx) 1973-10-02
FR2154683B1 (xx) 1977-01-14
FR2154683A1 (xx) 1973-05-11
JPS595993B2 (ja) 1984-02-08

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