KR980005531A - 반도체 소자의 금속배선 형성방법 - Google Patents

반도체 소자의 금속배선 형성방법 Download PDF

Info

Publication number
KR980005531A
KR980005531A KR1019960024294A KR19960024294A KR980005531A KR 980005531 A KR980005531 A KR 980005531A KR 1019960024294 A KR1019960024294 A KR 1019960024294A KR 19960024294 A KR19960024294 A KR 19960024294A KR 980005531 A KR980005531 A KR 980005531A
Authority
KR
South Korea
Prior art keywords
titanium
rich
film
antireflection film
nitride film
Prior art date
Application number
KR1019960024294A
Other languages
English (en)
Other versions
KR100400280B1 (ko
Inventor
이경복
곽노정
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960024294A priority Critical patent/KR100400280B1/ko
Publication of KR980005531A publication Critical patent/KR980005531A/ko
Application granted granted Critical
Publication of KR100400280B1 publication Critical patent/KR100400280B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체소자의 금속배선 형성방법에 관한 것으로, 반도체기판 상부에 층간절연막을 형성하고, 콘택마스크를 이용한 식각공정으로 상기 반도체기판의 예정된 부분을 노출시키는 콘택홀을 형성한 다음, 전체표면상부에 확산방지층과 금속배선 물질인 알루미늄합금을 형성하고 전체표면상부에 반사방지막을 형성하는 반도체소자의 금속배선 형성방법에 있어서, 상기 반사방지막을 티타늄-리치-티타늄질화막과 질소-리치-티타늄질화막의 적층구조로 형성하여 상기 티타늄-리치-티타늄질화막의 티타늄 원자가 알루미늄합금으로 확산함으로써 상기 알루미늄합금의 표면 변형을 감소시켜 상기 반사방지막의 크랙 발생을 억제하고, 후속공정시 현상액에 의한 금속배선의 손상을 방지할 수 있어 반도체소자의 특성 및 신뢰성을 향상시키고 그에 따른 반도체 소자의 고집적화를 가능하게 하는 기술이다.

Description

반도체 소자의 금속배선 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a도 내지 제2b도는 본 발명의 실시예에 따른 반도체소자의 금속배선 형성방법을 도시한 단면도.

Claims (3)

  1. 반도체기판 상부에 층간절연막을 형성하고, 콘택마스크를 이용한 식각공정으로 상기 반도체기판의 예정된 부분을 노출시키는 콘택홀을 형성한 다음, 전체표면상부에 확산방지층과 금속배선 물질인 알루미늄합금을 형성하고 전체표면상부에 반사방지막을 형성하는 반도체소자의 금속배선 형성방법에 있어서, 상기 반사방지막을 티타늄-리치-티타늄질화막과 질소-리치-티타늄질화막의 적층구조로 형성하는 것을 특징으로 하는 반도체소자의 금속배선 형성방법.
  2. 제1항에 있어서, 상기 티타늄-리치-티타늄질화막은 티타늄이 질소보다 0.1 ~ 10% 정도 많은 비율로 형성하는 것을 특징으로 하는 반도체소자의 금속배선 형성방법.
  3. 제1항에 있어서, 상기 티타늄-리치-티타늄질화막은 질소가 티타늄보다 0.1 ~ 10%정도 많은 비율로 형성하는 특징으로 하는 반도체소자의 금속배선 형성방법.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960024294A 1996-06-27 1996-06-27 반도체소자의금속배선형성방법 KR100400280B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960024294A KR100400280B1 (ko) 1996-06-27 1996-06-27 반도체소자의금속배선형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960024294A KR100400280B1 (ko) 1996-06-27 1996-06-27 반도체소자의금속배선형성방법

Publications (2)

Publication Number Publication Date
KR980005531A true KR980005531A (ko) 1998-03-30
KR100400280B1 KR100400280B1 (ko) 2003-12-24

Family

ID=37422336

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960024294A KR100400280B1 (ko) 1996-06-27 1996-06-27 반도체소자의금속배선형성방법

Country Status (1)

Country Link
KR (1) KR100400280B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100510062B1 (ko) * 1998-08-18 2005-11-03 주식회사 하이닉스반도체 티타늄 질화막 형성 방법
KR20200089789A (ko) * 2019-01-17 2020-07-28 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Also Published As

Publication number Publication date
KR100400280B1 (ko) 2003-12-24

Similar Documents

Publication Publication Date Title
KR950034678A (ko) 집적 회로내에 전도성 접속부 형성 방법 및, 그 회로내의 전도성 부재
KR960039281A (ko) 반도체 장치의 배선 구조 및 그 제조 방법
KR940016513A (ko) 반도체소자의 저저항 접촉형성방법
KR980005531A (ko) 반도체 소자의 금속배선 형성방법
KR970067640A (ko) 반도체 소자의 금속층 형성 방법
KR970072319A (ko) 반도체 장치의 층간절연막 형성 방법
KR940016503A (ko) 텅스텐을 이용한 콘택플러그 제조방법
KR980005512A (ko) 반도체 소자의 금속배선 형성방법
KR970052297A (ko) 반도체소자의 금속배선 형성방법
KR980005596A (ko) 반도체 장치의 금속콘택 형성방법
KR970003475A (ko) 반도체 소자의 금속 배선 방법
KR970067929A (ko) 반도체 소자의 금속층 형성방법
KR970063500A (ko) 반도체소자의 금속배선 형성방법
KR930017096A (ko) 반도체장치와 그 제조방법
KR970052239A (ko) 반도체소자의 비아콘택 형성방법
KR930003255A (ko) 반도체 장치 제조 방법
KR970072098A (ko) 반도체 소자의 금속배선 형성 방법
KR980005650A (ko) 반도체 장치의 콘택홀 형성방법
KR950034439A (ko) 반도체 소자의 금속배선 제조방법
KR980005585A (ko) 반도체 소자의 금속층 형성방법
KR970077523A (ko) 다중금속막 형성방법
KR970052298A (ko) 반도체소자의 비아콘택 형성방법
KR970077519A (ko) 다층 금속배선 형성방법
KR970077196A (ko) 반도체장치의 금속 배선 형성방법
KR980005532A (ko) 반도체 소자의 금속배선 형성방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100825

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee