KR970707595A - 다층 복합체 및 그의 제조방법(multilayered composites and process of manufacture) - Google Patents
다층 복합체 및 그의 제조방법(multilayered composites and process of manufacture) Download PDFInfo
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- KR970707595A KR970707595A KR1019970702485A KR19970702485A KR970707595A KR 970707595 A KR970707595 A KR 970707595A KR 1019970702485 A KR1019970702485 A KR 1019970702485A KR 19970702485 A KR19970702485 A KR 19970702485A KR 970707595 A KR970707595 A KR 970707595A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract 3
- 238000000034 method Methods 0.000 title claims 11
- 239000002131 composite material Substances 0.000 title abstract description 6
- 229910052716 thallium Inorganic materials 0.000 claims abstract 9
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052745 lead Inorganic materials 0.000 claims 14
- 229910052692 Dysprosium Inorganic materials 0.000 claims 10
- 229910052693 Europium Inorganic materials 0.000 claims 10
- 229910052688 Gadolinium Inorganic materials 0.000 claims 10
- 229910052689 Holmium Inorganic materials 0.000 claims 10
- 229910052779 Neodymium Inorganic materials 0.000 claims 10
- 229910052777 Praseodymium Inorganic materials 0.000 claims 10
- 229910052772 Samarium Inorganic materials 0.000 claims 10
- 229910052746 lanthanum Inorganic materials 0.000 claims 10
- 229910052727 yttrium Inorganic materials 0.000 claims 10
- 229910052691 Erbium Inorganic materials 0.000 claims 9
- 229910052775 Thulium Inorganic materials 0.000 claims 9
- 229910052791 calcium Inorganic materials 0.000 claims 6
- 239000010408 film Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 229910052769 Ytterbium Inorganic materials 0.000 claims 5
- 229910052712 strontium Inorganic materials 0.000 claims 4
- 229910052788 barium Inorganic materials 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
- H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/93—Electric superconducting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/702—Josephson junction present
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/742—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
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- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Secondary Cells (AREA)
- Metal Extraction Processes (AREA)
Abstract
본 발명은 다층 초전도 복합체, 특히 초전도성 탈륨-함유 산화물을 기제로 하는 복합체, 및 그의 제조방법에 관한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 단부 외형의 접합부품 형태를 갖는 다층 복합체 제품의 횡단면도이다. 제3도는 교차 3층 외형의 접합부품 형태를 갖는 다층 복합체 제품의 횡단면도이다. 제4도는 또 다른 교차 3층 외형의 접합부품 형태를 갖는 다층 복합체 제품의 횡단면도이다.
Claims (15)
1) 기판, 2) 제1초전도층, 3) 절연층이나 통상적인 전도층을 포함하는 하나 이상의 중간층, 및 4) 제2초전도층을 포함하고, 이러한 층 모두가 적어도 부분적으로 중첩하고, 제1초전도층, 통상적인 전도층, 및 제2초전도층이 각각 독립적으로 탈륨-함유 산화물 하나 이상으로 필수적으로 이루어지고, 상기 절연층이 제1초전도층과 제2초전도층 모두와 접촉하는 경우, 이 절연층이 탈륨-함유 산화물로 필수적으로 이루어지는, 개선된 다층 복합체 제품.
제1항에 있어서, 상기 중간층이 하나 이상의 절연층과 하나 이상의 전도층을 포함하는 제품.
제1항에 있어서, 상기 초전도층이 각각 독립적으로 하기 화학식들(1, 2, 및 3)로 표시되는 화합물로 이루어진 군에서 선택되 제품:
T1(Ba1-xM1 x)2(Ca1-yM2 y)n-1CunO2n+3-z(1)
(상기 식에서, M1은 Sr, Ca,Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이고;x는 0 내지 0.2이고;M2는 Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이며;y는 0 내지 0.4이고;n은 2, 3 또는 4이고;z는 0 내지 0.5이다);
T1(Ba1-xM1 x)2(Ca1-yM2 y)n-1CunO2n+4-z(2)
(상기 식에서, M1은 Sr, Ca,Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이고;x는 0 내지 0.2이고;M2는 Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이며;y는 0 내지 0.4이고;n은 2, 3 또는 4이고;z는 0 내지 0.5이다);
(Tl1-wPbw)(Sr1-xM1 x)2(Ca1-yMw2 y)n-1CunO2n+3-z(3)
(상기 식에서, w는 0.2 내지 0.8이고;M1은 Ba, Ca,Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이고;x는 0 내지 0.3이고;M2는 Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이며;y는 0 내지 0.6이고;n은 2, 또는 3이고;z는 0 내지 0.5이다);
제3항에 있어서, 상기 중간층이 하기 화학식들(4, 5, 및 6)로 표시되는 화합물, Tl0.5Pb0.5Sr2CuO5-z(이 식에서, z는 0 내지 0.2이다).(Tl1-wPbw)Sr2CuO5-z(이 식에서 w는 0 내지 0.5이고 z는 0 내지 0.2이다), Tl0.5Pb0.5Sr2CuO5-z(이 식에서, z는 0.25 내지 0.5이다), Tl0.5Pb0.5Sr2(Ca1-yYy)Cu2O7(이 식에서, y는 0.6 내지 1이다), LaAlO3, NdGaO3, 및 CeO2로 이루어진 군에서 선택되는 제품;
Tl(Ba1-xM1 x)2CuO5-z(4)
(상기 식에서, M1은 Sr, Ca,Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이고;x는 0 내지 0.2이고;z는 0 내지 0.5이다);
(Tl1-wPbw)(Sr1-xM1 x)2CuO5-z(5)
(상기 식에서, w는0.2 내지 0.8이고;M1은 Ba, Sr, Ca,Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이고;x는 0 내지 0.2이고;z는 0 내지 0.5이다);
(Tl1-wPbw)(Sr1-xM1 x)2(Ca1-yM2 y)Cu2O7-z(6)
(상기 식에서, w는 0.2 내지 0.8이고;M1은 Ba, Ca,Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이고;x는 0 내지 0.2이고;M2는 Y, La, Pr, Nd, Sm, Eu, Gd, Ce, Tl, Pb, Dy, Ho, Er, Tm, 또는 Yb이며;y는 0.6 내지 1이고;z는 0 내지 0.5이다);
제4항에 있어서, 상기 절연층이 단 하나의 초전도층과 접촉하고, LaAlO3, NdGaO3또는 CeO2으로 이루어진 군에서 선택된 제품.
제1항에 있어서, 상기 기판이 LaAlO3, NdGaO3또는 CeO2완충층을 갖는 사파이어, MgO, 또는 이트륨-안정화된 지르코니아로 이루어진 군에서 선택된 제품.
제1항에 있어서, 제1초전도층이(Tl, Pb)Sr2Ca0.8Y0.2Cu2O7이고, 중간층이 (Tl, Pb)Sr2Ca2O5이며, 제2초전도층이(Tl, Pb)Sr2Ca0.8Y0.2Cu2O7이고 기판이 NdGaO3인 제품.
제1항에 있어서, 제1초전도층이(Tl, Pb)Sr2Ca0.8Y0.2Cu2)7이고, 중간층이 (Tl, Pb)Sr2Cu2O5이며, 제2초전도층이(Tl, Pb)Sr2Ca0.8Y0.2Cu2O7이고 기판이 NaAlO3인 제품.
제1항에 있어서, 조셉슨(Jesephson's) 접합부 형태인 제품.
제1항에 있어서, 다회전 픽-업(pick-up) 코일 형태인 제품.
비교적 휘발성인 탈륨-함유 산화물의 제1공급원을 제공하는 단계;비휘발성 산화물의 제2공급원을 제공하는 단계;및 상기 제1공급원으로부터의 탈륨-함유 산화물 충분량을 기판 상에 침착시키는 동안, 상기 제2공급원으로부터의 비휘발성 산화물을 상기 기판 상에 동시 침착시켜서 예정된 화학량론적 결정질의 얇은 필름을 제공하는 단계에 의해 연속층을 증착시키고, 이 때 상기 침착 필름이 초전도성 필름인 경우에는 O2또는 N2O존재하에 약 1.33×10+4내지 약 10.1×10+5Pa 압력에서 700℃ 내지 필름 분해 온도로 초전도성 필름을 가열시키는, 제1항에 따른 제품을 제조하는 개선된 증기상 방법.
제10항에 있어서, 상기 초전도성 필름을 약 700 내지 약 850℃의 온도로 가열하는 방법.
제10항에 있어서, 상기 초전도성 필름을 약 775 내지 약 800℃의 온도로 가열하는 방법.
제10항에 있어서, O2또는 N2O압력이 최소한 약 6.67×104Pa인 방법.
제10항에 있어서, O2또는 N2O압력이 최소한 약 2.67×104Pa인 방법.
※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
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Application Number | Priority Date | Filing Date | Title |
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US32356094A | 1994-10-17 | 1994-10-17 | |
US08/323,560 | 1994-10-17 |
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KR970707595A true KR970707595A (ko) | 1997-12-01 |
KR100428910B1 KR100428910B1 (ko) | 2004-09-16 |
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US (2) | US5567673A (ko) |
EP (1) | EP0787363B1 (ko) |
JP (1) | JPH10507590A (ko) |
KR (1) | KR100428910B1 (ko) |
AT (1) | ATE188313T1 (ko) |
CA (1) | CA2200185A1 (ko) |
DE (1) | DE69514248T2 (ko) |
DK (1) | DK0787363T3 (ko) |
ES (1) | ES2141967T3 (ko) |
GR (1) | GR3032460T3 (ko) |
PT (1) | PT787363E (ko) |
TW (1) | TW318287B (ko) |
WO (1) | WO1996012307A1 (ko) |
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JPH11186623A (ja) * | 1997-12-25 | 1999-07-09 | Sumitomo Electric Ind Ltd | 磁気センサ |
JP2001111123A (ja) * | 1999-10-12 | 2001-04-20 | Sumitomo Electric Ind Ltd | Squid素子 |
US20050260331A1 (en) * | 2002-01-22 | 2005-11-24 | Xingwu Wang | Process for coating a substrate |
US7091412B2 (en) * | 2002-03-04 | 2006-08-15 | Nanoset, Llc | Magnetically shielded assembly |
US20040225213A1 (en) * | 2002-01-22 | 2004-11-11 | Xingwu Wang | Magnetic resonance imaging coated assembly |
EP1751294A1 (en) * | 2004-05-26 | 2007-02-14 | Novus Energy, LLC | Ethanol production from biological wastes |
US20060118758A1 (en) * | 2004-09-15 | 2006-06-08 | Xingwu Wang | Material to enable magnetic resonance imaging of implantable medical devices |
US7517834B2 (en) * | 2006-01-24 | 2009-04-14 | The University Of Hong Kong | High temperature superconducting (HTS) tape coil with enhanced protection and method for making same |
US10256392B1 (en) * | 2018-03-23 | 2019-04-09 | International Business Machines Corporation | Vertical transmon qubit device |
CN111969102B (zh) * | 2020-09-11 | 2023-10-27 | 中国科学院紫金山天文台 | 一种改善超导钛-铌薄膜接触电极的制备方法 |
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JPS6431475A (en) * | 1987-07-28 | 1989-02-01 | Univ Tokyo | Superconducting device and forming method thereof |
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JPH0258879A (ja) * | 1988-08-25 | 1990-02-28 | Canon Inc | トンネル型ジョセフソン接合素子およびその製造方法 |
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JPH04171872A (ja) * | 1990-11-05 | 1992-06-19 | Matsushita Electric Ind Co Ltd | ジョセフソン素子およびその製造方法 |
US5134117A (en) * | 1991-01-22 | 1992-07-28 | Biomagnetic Technologies, Inc. | High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction |
US5252551A (en) * | 1991-12-27 | 1993-10-12 | The United States Of America As Represented By The Department Of Energy | Superconducting composite with multilayer patterns and multiple buffer layers |
EP0660968A1 (en) * | 1992-09-14 | 1995-07-05 | Conductus, Inc. | Improved barrier layers for oxide superconductor devices and circuits |
-
1995
- 1995-03-29 US US08/412,424 patent/US5567673A/en not_active Expired - Fee Related
- 1995-10-10 WO PCT/US1995/013462 patent/WO1996012307A1/en not_active Application Discontinuation
- 1995-10-10 KR KR1019970702485A patent/KR100428910B1/ko not_active IP Right Cessation
- 1995-10-10 EP EP95937535A patent/EP0787363B1/en not_active Expired - Lifetime
- 1995-10-10 DE DE69514248T patent/DE69514248T2/de not_active Expired - Fee Related
- 1995-10-10 ES ES95937535T patent/ES2141967T3/es not_active Expired - Lifetime
- 1995-10-10 CA CA002200185A patent/CA2200185A1/en not_active Abandoned
- 1995-10-10 DK DK95937535T patent/DK0787363T3/da active
- 1995-10-10 PT PT95937535T patent/PT787363E/pt unknown
- 1995-10-10 AT AT95937535T patent/ATE188313T1/de not_active IP Right Cessation
- 1995-10-10 JP JP8513457A patent/JPH10507590A/ja not_active Ceased
- 1995-10-18 TW TW084110956A patent/TW318287B/zh active
-
1996
- 1996-01-26 US US08/592,242 patent/US5736488A/en not_active Expired - Fee Related
-
2000
- 2000-01-25 GR GR20000400154T patent/GR3032460T3/el not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH10507590A (ja) | 1998-07-21 |
EP0787363A1 (en) | 1997-08-06 |
ES2141967T3 (es) | 2000-04-01 |
TW318287B (ko) | 1997-10-21 |
CA2200185A1 (en) | 1996-04-25 |
ATE188313T1 (de) | 2000-01-15 |
GR3032460T3 (en) | 2000-05-31 |
KR100428910B1 (ko) | 2004-09-16 |
US5736488A (en) | 1998-04-07 |
EP0787363B1 (en) | 1999-12-29 |
PT787363E (pt) | 2000-04-28 |
DK0787363T3 (da) | 2000-05-08 |
WO1996012307A1 (en) | 1996-04-25 |
US5567673A (en) | 1996-10-22 |
DE69514248T2 (de) | 2000-07-06 |
DE69514248D1 (de) | 2000-02-03 |
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