KR970707590A - 바리캡 다이오드와 바리캡 다이오드를 만나는 방법(A Varicap diode and method of manufacturing a varicap diode) - Google Patents

바리캡 다이오드와 바리캡 다이오드를 만나는 방법(A Varicap diode and method of manufacturing a varicap diode) Download PDF

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Publication number
KR970707590A
KR970707590A KR1019970703314A KR19970703314A KR970707590A KR 970707590 A KR970707590 A KR 970707590A KR 1019970703314 A KR1019970703314 A KR 1019970703314A KR 19970703314 A KR19970703314 A KR 19970703314A KR 970707590 A KR970707590 A KR 970707590A
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KR
South Korea
Prior art keywords
band
conductivity type
epitaxial layer
layer
dopant atoms
Prior art date
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English (en)
Korean (ko)
Inventor
프레데리커스 로롤프 요하네스 휘스만
오스카 요하네스 안토이네타 부이크
빈트케 볼프강
Original Assignee
요트. 게. 아 롤페즈
필립스 일렉트로닉스 엔. 브이.
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Application filed by 요트. 게. 아 롤페즈, 필립스 일렉트로닉스 엔. 브이. filed Critical 요트. 게. 아 롤페즈
Publication of KR970707590A publication Critical patent/KR970707590A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
KR1019970703314A 1995-09-18 1996-09-11 바리캡 다이오드와 바리캡 다이오드를 만나는 방법(A Varicap diode and method of manufacturing a varicap diode) Withdrawn KR970707590A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP95202519.5 1995-09-18
EP95202519 1995-09-18

Publications (1)

Publication Number Publication Date
KR970707590A true KR970707590A (ko) 1997-12-01

Family

ID=8220643

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970703314A Withdrawn KR970707590A (ko) 1995-09-18 1996-09-11 바리캡 다이오드와 바리캡 다이오드를 만나는 방법(A Varicap diode and method of manufacturing a varicap diode)

Country Status (7)

Country Link
US (1) US5854117A (enExample)
EP (1) EP0792525B1 (enExample)
JP (1) JPH10509563A (enExample)
KR (1) KR970707590A (enExample)
CN (1) CN1165586A (enExample)
DE (1) DE69617628T2 (enExample)
WO (1) WO1997011498A1 (enExample)

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SE511721C2 (sv) * 1997-06-18 1999-11-15 Ericsson Telefon Ab L M Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning
EP1214737B1 (en) * 2000-03-03 2011-06-01 Nxp B.V. A method of producing a schottky varicap diode
EP1139434A3 (en) * 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same
DE10032389A1 (de) * 2000-07-06 2002-01-17 Philips Corp Intellectual Pty Empfänger mit Kapazitätsvariationsdiode
US6521939B1 (en) 2000-09-29 2003-02-18 Chartered Semiconductor Manufacturing Ltd. High performance integrated varactor on silicon
US6933774B2 (en) * 2000-11-28 2005-08-23 Precision Dynamics Corporation Rectifying charge storage element with transistor
US6859093B1 (en) 2000-11-28 2005-02-22 Precision Dynamics Corporation Rectifying charge storage device with bi-stable states
US7031182B2 (en) * 2000-11-28 2006-04-18 Beigel Michael L Rectifying charge storage memory circuit
US6982452B2 (en) * 2000-11-28 2006-01-03 Precision Dynamics Corporation Rectifying charge storage element
US6414543B1 (en) 2000-11-28 2002-07-02 Precision Dynamics Corporation Rectifying charge storage element
US6924691B2 (en) * 2000-11-28 2005-08-02 Precision Dynamics Corporation Rectifying charge storage device with sensor
US6835977B2 (en) * 2002-03-05 2004-12-28 United Microelectronics Corp. Variable capactor structure
US7204425B2 (en) * 2002-03-18 2007-04-17 Precision Dynamics Corporation Enhanced identification appliance
CN100353567C (zh) * 2003-11-19 2007-12-05 联华电子股份有限公司 制作可变电容的方法
CN100442542C (zh) * 2003-12-15 2008-12-10 松下电器产业株式会社 制造可变电容二极管的方法及可变电容二极管
WO2006022623A1 (en) * 2004-07-22 2006-03-02 Precision Dynamics Corporation Rectifying charge storage device with sensor
US7919382B2 (en) * 2008-09-09 2011-04-05 Freescale Semicondcutor, Inc. Methods for forming varactor diodes
CN101834134B (zh) * 2009-03-12 2012-03-21 中芯国际集成电路制造(上海)有限公司 提高金属-氧化物半导体变容二极管的品质因子的方法
DE102009059873A1 (de) 2009-12-21 2011-06-22 Epcos Ag, 81669 Varaktor und Verfahren zur Herstellung eines Varaktors
KR101138407B1 (ko) * 2010-03-15 2012-04-26 고려대학교 산학협력단 버랙터가 구비된 반도체 집적 회로, 및 그 제조 방법
RU2447541C1 (ru) * 2010-12-03 2012-04-10 Федеральное государственное унитарное предприятие "Научно-исследовательский институт микроприборов-К" Мдп-варикап
RU2569906C1 (ru) * 2014-08-26 2015-12-10 Акционерное общество "Научно-исследовательский институт микроприборов-К" (АО "НИИМП-К") Многоэлементный мдп варикап
KR102013867B1 (ko) 2015-08-05 2019-08-26 한국전자통신연구원 병렬 처리 장치 및 방법
RU2614663C1 (ru) * 2015-12-29 2017-03-28 Общество с ограниченной ответственностью "Лаборатория Микроприборов" Варикап и способ его изготовления
RU167582U1 (ru) * 2016-06-08 2017-01-10 Акционерное общество "Научно-исследовательский институт микроприборов-К" Свч мдп-варикап с переносом заряда
JP6299835B1 (ja) * 2016-10-07 2018-03-28 株式会社Sumco エピタキシャルシリコンウェーハおよびエピタキシャルシリコンウェーハの製造方法
RU192894U1 (ru) * 2019-07-09 2019-10-04 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" СВЧ МДП-варикап
CN115911136A (zh) * 2022-11-21 2023-04-04 捷捷半导体有限公司 芯片结构及其制备方法

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US4106953A (en) * 1976-12-28 1978-08-15 Motorola, Inc. Method of producing an ion implanted tuning diode
DE2833319C2 (de) * 1978-07-29 1982-10-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Kapazitätsdiode
JPS5669869A (en) * 1979-11-09 1981-06-11 Toshiba Corp Manufacture of variable capacity diode
US4534806A (en) * 1979-12-03 1985-08-13 International Business Machines Corporation Method for manufacturing vertical PNP transistor with shallow emitter
US4656498A (en) * 1980-10-27 1987-04-07 Texas Instruments Incorporated Oxide-isolated integrated Schottky logic
JPS6057952A (ja) * 1983-09-09 1985-04-03 Toshiba Corp 半導体装置の製造方法
JPS6247166A (ja) * 1985-08-26 1987-02-28 Toshiba Corp 半導体装置の製造方法
JPS6459874A (en) * 1987-08-31 1989-03-07 Toko Inc Manufacture of variable-capacitance diode
US5197077A (en) * 1992-02-28 1993-03-23 Mcdonnell Douglas Corporation Low divergence laser

Also Published As

Publication number Publication date
DE69617628T2 (de) 2002-08-14
CN1165586A (zh) 1997-11-19
DE69617628D1 (de) 2002-01-17
WO1997011498A1 (en) 1997-03-27
US5854117A (en) 1998-12-29
EP0792525A1 (en) 1997-09-03
JPH10509563A (ja) 1998-09-14
EP0792525B1 (en) 2001-12-05

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