DE69617628T2 - Varicapdiode und verfahren zur herstellung - Google Patents
Varicapdiode und verfahren zur herstellungInfo
- Publication number
- DE69617628T2 DE69617628T2 DE69617628T DE69617628T DE69617628T2 DE 69617628 T2 DE69617628 T2 DE 69617628T2 DE 69617628 T DE69617628 T DE 69617628T DE 69617628 T DE69617628 T DE 69617628T DE 69617628 T2 DE69617628 T2 DE 69617628T2
- Authority
- DE
- Germany
- Prior art keywords
- production method
- varicap diode
- varicap
- diode
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66174—Capacitors with PN or Schottky junction, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP95202519 | 1995-09-18 | ||
| PCT/IB1996/000921 WO1997011498A1 (en) | 1995-09-18 | 1996-09-11 | A varicap diode and method of manufacturing a varicap diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69617628D1 DE69617628D1 (de) | 2002-01-17 |
| DE69617628T2 true DE69617628T2 (de) | 2002-08-14 |
Family
ID=8220643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69617628T Expired - Lifetime DE69617628T2 (de) | 1995-09-18 | 1996-09-11 | Varicapdiode und verfahren zur herstellung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5854117A (de) |
| EP (1) | EP0792525B1 (de) |
| JP (1) | JPH10509563A (de) |
| KR (1) | KR970707590A (de) |
| CN (1) | CN1165586A (de) |
| DE (1) | DE69617628T2 (de) |
| WO (1) | WO1997011498A1 (de) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE511721C2 (sv) * | 1997-06-18 | 1999-11-15 | Ericsson Telefon Ab L M | Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning |
| ATE511701T1 (de) * | 2000-03-03 | 2011-06-15 | Nxp Bv | Verfahren zur herstellung einer schottky varicap diode |
| EP1139434A3 (de) * | 2000-03-29 | 2003-12-10 | Tyco Electronics Corporation | Variable Kapazitätsdiode mit hyperabruptem Übergangsprofil |
| US6995068B1 (en) * | 2000-06-09 | 2006-02-07 | Newport Fab, Llc | Double-implant high performance varactor and method for manufacturing same |
| DE10032389A1 (de) * | 2000-07-06 | 2002-01-17 | Philips Corp Intellectual Pty | Empfänger mit Kapazitätsvariationsdiode |
| US6521939B1 (en) | 2000-09-29 | 2003-02-18 | Chartered Semiconductor Manufacturing Ltd. | High performance integrated varactor on silicon |
| US6933774B2 (en) * | 2000-11-28 | 2005-08-23 | Precision Dynamics Corporation | Rectifying charge storage element with transistor |
| US6982452B2 (en) * | 2000-11-28 | 2006-01-03 | Precision Dynamics Corporation | Rectifying charge storage element |
| US6924691B2 (en) * | 2000-11-28 | 2005-08-02 | Precision Dynamics Corporation | Rectifying charge storage device with sensor |
| US6414543B1 (en) | 2000-11-28 | 2002-07-02 | Precision Dynamics Corporation | Rectifying charge storage element |
| US7031182B2 (en) * | 2000-11-28 | 2006-04-18 | Beigel Michael L | Rectifying charge storage memory circuit |
| US6924688B1 (en) | 2000-11-28 | 2005-08-02 | Precision Dynamics Corporation | Rectifying charge storage device with antenna |
| US6835977B2 (en) * | 2002-03-05 | 2004-12-28 | United Microelectronics Corp. | Variable capactor structure |
| US7204425B2 (en) * | 2002-03-18 | 2007-04-17 | Precision Dynamics Corporation | Enhanced identification appliance |
| CN100353567C (zh) * | 2003-11-19 | 2007-12-05 | 联华电子股份有限公司 | 制作可变电容的方法 |
| CN100442542C (zh) * | 2003-12-15 | 2008-12-10 | 松下电器产业株式会社 | 制造可变电容二极管的方法及可变电容二极管 |
| WO2006022623A1 (en) * | 2004-07-22 | 2006-03-02 | Precision Dynamics Corporation | Rectifying charge storage device with sensor |
| US7919382B2 (en) * | 2008-09-09 | 2011-04-05 | Freescale Semicondcutor, Inc. | Methods for forming varactor diodes |
| CN101834134B (zh) * | 2009-03-12 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | 提高金属-氧化物半导体变容二极管的品质因子的方法 |
| DE102009059873A1 (de) | 2009-12-21 | 2011-06-22 | Epcos Ag, 81669 | Varaktor und Verfahren zur Herstellung eines Varaktors |
| KR101138407B1 (ko) * | 2010-03-15 | 2012-04-26 | 고려대학교 산학협력단 | 버랙터가 구비된 반도체 집적 회로, 및 그 제조 방법 |
| RU2447541C1 (ru) * | 2010-12-03 | 2012-04-10 | Федеральное государственное унитарное предприятие "Научно-исследовательский институт микроприборов-К" | Мдп-варикап |
| RU2569906C1 (ru) * | 2014-08-26 | 2015-12-10 | Акционерное общество "Научно-исследовательский институт микроприборов-К" (АО "НИИМП-К") | Многоэлементный мдп варикап |
| KR102013867B1 (ko) | 2015-08-05 | 2019-08-26 | 한국전자통신연구원 | 병렬 처리 장치 및 방법 |
| RU2614663C1 (ru) * | 2015-12-29 | 2017-03-28 | Общество с ограниченной ответственностью "Лаборатория Микроприборов" | Варикап и способ его изготовления |
| RU167582U1 (ru) * | 2016-06-08 | 2017-01-10 | Акционерное общество "Научно-исследовательский институт микроприборов-К" | Свч мдп-варикап с переносом заряда |
| JP6299835B1 (ja) * | 2016-10-07 | 2018-03-28 | 株式会社Sumco | エピタキシャルシリコンウェーハおよびエピタキシャルシリコンウェーハの製造方法 |
| RU192894U1 (ru) * | 2019-07-09 | 2019-10-04 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | СВЧ МДП-варикап |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7513161A (nl) * | 1975-11-11 | 1977-05-13 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze. |
| US4106953A (en) * | 1976-12-28 | 1978-08-15 | Motorola, Inc. | Method of producing an ion implanted tuning diode |
| DE2833319C2 (de) * | 1978-07-29 | 1982-10-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Kapazitätsdiode |
| JPS5669869A (en) * | 1979-11-09 | 1981-06-11 | Toshiba Corp | Manufacture of variable capacity diode |
| US4534806A (en) * | 1979-12-03 | 1985-08-13 | International Business Machines Corporation | Method for manufacturing vertical PNP transistor with shallow emitter |
| US4656498A (en) * | 1980-10-27 | 1987-04-07 | Texas Instruments Incorporated | Oxide-isolated integrated Schottky logic |
| JPS6057952A (ja) * | 1983-09-09 | 1985-04-03 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6247166A (ja) * | 1985-08-26 | 1987-02-28 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6459874A (en) * | 1987-08-31 | 1989-03-07 | Toko Inc | Manufacture of variable-capacitance diode |
| US5197077A (en) * | 1992-02-28 | 1993-03-23 | Mcdonnell Douglas Corporation | Low divergence laser |
-
1996
- 1996-09-11 WO PCT/IB1996/000921 patent/WO1997011498A1/en not_active Application Discontinuation
- 1996-09-11 EP EP96927846A patent/EP0792525B1/de not_active Expired - Lifetime
- 1996-09-11 DE DE69617628T patent/DE69617628T2/de not_active Expired - Lifetime
- 1996-09-11 JP JP9512517A patent/JPH10509563A/ja active Pending
- 1996-09-11 KR KR1019970703314A patent/KR970707590A/ko not_active Application Discontinuation
- 1996-09-11 CN CN96191080A patent/CN1165586A/zh active Pending
- 1996-09-17 US US08/715,059 patent/US5854117A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69617628D1 (de) | 2002-01-17 |
| EP0792525A1 (de) | 1997-09-03 |
| WO1997011498A1 (en) | 1997-03-27 |
| EP0792525B1 (de) | 2001-12-05 |
| JPH10509563A (ja) | 1998-09-14 |
| KR970707590A (ko) | 1997-12-01 |
| US5854117A (en) | 1998-12-29 |
| CN1165586A (zh) | 1997-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69617628T2 (de) | Varicapdiode und verfahren zur herstellung | |
| DE69609903T2 (de) | Diode und Verfahren zur Herstellung | |
| DE69327483D1 (de) | Diode und Verfahren zur Herstellung | |
| DE69632246D1 (de) | Verfahren zur herstellung von befestigungselementen und entsprechendes befestigungselement | |
| DE69529768D1 (de) | Verfahren und herstellung zur hydroverwirrung von vliesstoffen | |
| DE69626833D1 (de) | Ernährungsergänzungsgetränk und verfahren zur herstellung desselben | |
| DE59606677D1 (de) | Verfahren und vorrichtung zur vereinheitlichten, kontinuierlichen herstellung von polyamiden | |
| DE69527054T2 (de) | Retroreflektierender gegenstand und verfahren zur herstellung | |
| ATE236549T1 (de) | Verfahren zur herstellung von borstenwaren und danach hergestellte borstenwaren | |
| ATE209208T1 (de) | Zwischenprodukte und verfahren zur herstellung olanzapin | |
| ATE219767T1 (de) | Verfahren zur herstellung von 2,4-dihydroxy- pyridin und 2,4-dihydroxy-3-nitropyridin | |
| DE69425748D1 (de) | Transistoren und verfahren zur herstellung | |
| DE59604810D1 (de) | Verfahren und vorrichtung zur kontinuierlichen herstellung von polyamiden | |
| DE69613964T2 (de) | Verfahren zur herstellung von pentafluoroethan und tetrafluorochloroethan | |
| DE69421084D1 (de) | Bioverbundwerkstoff und verfahren zur herstellung | |
| DE69522561T2 (de) | Verfahren zur herstellung von benzophentionen und benzophenonen | |
| DE69626299T2 (de) | Halbleiteranordnung und verfahren zur herstellung | |
| DE69323898D1 (de) | Polyamidzusammensetzung und verfahren zur herstellung von gegenständen | |
| DE69706721D1 (de) | Zener-Zap-Diode und Verfahren zur Herstellung | |
| DE69431396D1 (de) | Verfahren zur herstellung von n-tert-butyl-2-pyrazincarboxamid und n-tert-butyl-2-piperazincarboxamid | |
| DE69419516T2 (de) | Verfahren zur herstellung von hexafluorocyclobuten und verfahren zur herstellung von hexafluorocyclobutan | |
| ATE203506T1 (de) | Verfahren und zwischenprodukte zur herstellung von pestiziden-fluorolefinverbindungen | |
| DE69617643T2 (de) | Verfahren zur herstellung von difluormethan und difluorchlormethan | |
| DE59700696D1 (de) | Verfahren und zwischenprodukte zur herstellung von pyridyl-4-fluoranilinen | |
| DE69616819T2 (de) | Verfahren und vorrichtung zur herstellung von kunststoff-umverpackungen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |