CN1165586A - 变容二极管和制造变容二极管的方法 - Google Patents

变容二极管和制造变容二极管的方法 Download PDF

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Publication number
CN1165586A
CN1165586A CN96191080A CN96191080A CN1165586A CN 1165586 A CN1165586 A CN 1165586A CN 96191080 A CN96191080 A CN 96191080A CN 96191080 A CN96191080 A CN 96191080A CN 1165586 A CN1165586 A CN 1165586A
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CN
China
Prior art keywords
region
conductivity type
epitaxial layer
layer
dopant atoms
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Pending
Application number
CN96191080A
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English (en)
Chinese (zh)
Inventor
F·R·J·休斯曼
O·J·A·拜克
W·拜奇
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Koninklijke Philips NV
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Philips Electronics NV
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Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of CN1165586A publication Critical patent/CN1165586A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials

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  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
CN96191080A 1995-09-18 1996-09-11 变容二极管和制造变容二极管的方法 Pending CN1165586A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP95202519.5 1995-09-18
EP95202519 1995-09-18

Publications (1)

Publication Number Publication Date
CN1165586A true CN1165586A (zh) 1997-11-19

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ID=8220643

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96191080A Pending CN1165586A (zh) 1995-09-18 1996-09-11 变容二极管和制造变容二极管的方法

Country Status (7)

Country Link
US (1) US5854117A (enExample)
EP (1) EP0792525B1 (enExample)
JP (1) JPH10509563A (enExample)
KR (1) KR970707590A (enExample)
CN (1) CN1165586A (enExample)
DE (1) DE69617628T2 (enExample)
WO (1) WO1997011498A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100353549C (zh) * 2002-03-05 2007-12-05 联华电子股份有限公司 可变电容及其制造方法
CN100353567C (zh) * 2003-11-19 2007-12-05 联华电子股份有限公司 制作可变电容的方法
CN100442542C (zh) * 2003-12-15 2008-12-10 松下电器产业株式会社 制造可变电容二极管的方法及可变电容二极管
CN101834134B (zh) * 2009-03-12 2012-03-21 中芯国际集成电路制造(上海)有限公司 提高金属-氧化物半导体变容二极管的品质因子的方法
CN102667982A (zh) * 2009-12-21 2012-09-12 爱普科斯公司 变容二极管和用于制造变容二极管的方法
CN115911136A (zh) * 2022-11-21 2023-04-04 捷捷半导体有限公司 芯片结构及其制备方法

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SE511721C2 (sv) * 1997-06-18 1999-11-15 Ericsson Telefon Ab L M Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning
EP1214737B1 (en) * 2000-03-03 2011-06-01 Nxp B.V. A method of producing a schottky varicap diode
EP1139434A3 (en) * 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same
DE10032389A1 (de) * 2000-07-06 2002-01-17 Philips Corp Intellectual Pty Empfänger mit Kapazitätsvariationsdiode
US6521939B1 (en) 2000-09-29 2003-02-18 Chartered Semiconductor Manufacturing Ltd. High performance integrated varactor on silicon
US6933774B2 (en) * 2000-11-28 2005-08-23 Precision Dynamics Corporation Rectifying charge storage element with transistor
US6859093B1 (en) 2000-11-28 2005-02-22 Precision Dynamics Corporation Rectifying charge storage device with bi-stable states
US7031182B2 (en) * 2000-11-28 2006-04-18 Beigel Michael L Rectifying charge storage memory circuit
US6982452B2 (en) * 2000-11-28 2006-01-03 Precision Dynamics Corporation Rectifying charge storage element
US6414543B1 (en) 2000-11-28 2002-07-02 Precision Dynamics Corporation Rectifying charge storage element
US6924691B2 (en) * 2000-11-28 2005-08-02 Precision Dynamics Corporation Rectifying charge storage device with sensor
US7204425B2 (en) * 2002-03-18 2007-04-17 Precision Dynamics Corporation Enhanced identification appliance
WO2006022623A1 (en) * 2004-07-22 2006-03-02 Precision Dynamics Corporation Rectifying charge storage device with sensor
US7919382B2 (en) * 2008-09-09 2011-04-05 Freescale Semicondcutor, Inc. Methods for forming varactor diodes
KR101138407B1 (ko) * 2010-03-15 2012-04-26 고려대학교 산학협력단 버랙터가 구비된 반도체 집적 회로, 및 그 제조 방법
RU2447541C1 (ru) * 2010-12-03 2012-04-10 Федеральное государственное унитарное предприятие "Научно-исследовательский институт микроприборов-К" Мдп-варикап
RU2569906C1 (ru) * 2014-08-26 2015-12-10 Акционерное общество "Научно-исследовательский институт микроприборов-К" (АО "НИИМП-К") Многоэлементный мдп варикап
KR102013867B1 (ko) 2015-08-05 2019-08-26 한국전자통신연구원 병렬 처리 장치 및 방법
RU2614663C1 (ru) * 2015-12-29 2017-03-28 Общество с ограниченной ответственностью "Лаборатория Микроприборов" Варикап и способ его изготовления
RU167582U1 (ru) * 2016-06-08 2017-01-10 Акционерное общество "Научно-исследовательский институт микроприборов-К" Свч мдп-варикап с переносом заряда
JP6299835B1 (ja) * 2016-10-07 2018-03-28 株式会社Sumco エピタキシャルシリコンウェーハおよびエピタキシャルシリコンウェーハの製造方法
RU192894U1 (ru) * 2019-07-09 2019-10-04 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" СВЧ МДП-варикап

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7513161A (nl) * 1975-11-11 1977-05-13 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.
US4106953A (en) * 1976-12-28 1978-08-15 Motorola, Inc. Method of producing an ion implanted tuning diode
DE2833319C2 (de) * 1978-07-29 1982-10-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Kapazitätsdiode
JPS5669869A (en) * 1979-11-09 1981-06-11 Toshiba Corp Manufacture of variable capacity diode
US4534806A (en) * 1979-12-03 1985-08-13 International Business Machines Corporation Method for manufacturing vertical PNP transistor with shallow emitter
US4656498A (en) * 1980-10-27 1987-04-07 Texas Instruments Incorporated Oxide-isolated integrated Schottky logic
JPS6057952A (ja) * 1983-09-09 1985-04-03 Toshiba Corp 半導体装置の製造方法
JPS6247166A (ja) * 1985-08-26 1987-02-28 Toshiba Corp 半導体装置の製造方法
JPS6459874A (en) * 1987-08-31 1989-03-07 Toko Inc Manufacture of variable-capacitance diode
US5197077A (en) * 1992-02-28 1993-03-23 Mcdonnell Douglas Corporation Low divergence laser

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100353549C (zh) * 2002-03-05 2007-12-05 联华电子股份有限公司 可变电容及其制造方法
CN100353567C (zh) * 2003-11-19 2007-12-05 联华电子股份有限公司 制作可变电容的方法
CN100442542C (zh) * 2003-12-15 2008-12-10 松下电器产业株式会社 制造可变电容二极管的方法及可变电容二极管
CN101834134B (zh) * 2009-03-12 2012-03-21 中芯国际集成电路制造(上海)有限公司 提高金属-氧化物半导体变容二极管的品质因子的方法
CN102667982A (zh) * 2009-12-21 2012-09-12 爱普科斯公司 变容二极管和用于制造变容二极管的方法
US8988849B2 (en) 2009-12-21 2015-03-24 Epcos Ag Varactor and method for producing a varactor
CN115911136A (zh) * 2022-11-21 2023-04-04 捷捷半导体有限公司 芯片结构及其制备方法

Also Published As

Publication number Publication date
DE69617628T2 (de) 2002-08-14
DE69617628D1 (de) 2002-01-17
WO1997011498A1 (en) 1997-03-27
US5854117A (en) 1998-12-29
EP0792525A1 (en) 1997-09-03
JPH10509563A (ja) 1998-09-14
KR970707590A (ko) 1997-12-01
EP0792525B1 (en) 2001-12-05

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