KR970706602A - 광학 활성을 사용하는 필드-보강 확산법(Field-enhanced diffusion using optical activation) - Google Patents
광학 활성을 사용하는 필드-보강 확산법(Field-enhanced diffusion using optical activation)Info
- Publication number
- KR970706602A KR970706602A KR1019970702007A KR19970702007A KR970706602A KR 970706602 A KR970706602 A KR 970706602A KR 1019970702007 A KR1019970702007 A KR 1019970702007A KR 19970702007 A KR19970702007 A KR 19970702007A KR 970706602 A KR970706602 A KR 970706602A
- Authority
- KR
- South Korea
- Prior art keywords
- impurity
- target substrate
- substrate material
- semiconductor material
- laser
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims 3
- 238000009792 diffusion process Methods 0.000 title abstract description 3
- 230000004913 activation Effects 0.000 title 2
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000012535 impurity Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 6
- 239000010432 diamond Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract 18
- 238000010438 heat treatment Methods 0.000 claims abstract 5
- 238000004519 manufacturing process Methods 0.000 claims abstract 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical group [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 claims 2
- 230000003116 impacting effect Effects 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 229910052744 lithium Inorganic materials 0.000 claims 2
- 229910003002 lithium salt Inorganic materials 0.000 claims 2
- 159000000002 lithium salts Chemical class 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/222—Lithium-drift
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
- Glass Compositions (AREA)
Abstract
개량된 보강 확산 방법을 사용하는 반도체 재료 제조 방법은 진공 용기(10)내의 기판(12)상에 반도체 재료(14)를 놓는 단계와, 반도체 재료상부에 불순물(16)를 위치시키는 단계와, 반도체 재료를 가로질려 전압 전위를 발생하는 단계와, 반도체 재료를 가열하는 단계와 고전압과 이미 발생된 가열상태하에서 반도체 재료를 광자로 충돌하는 단계를 포함한다. 이 방법은 특히 N-형 다이아몬드 반도체 재료를 만드는데 적용가능하다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 N-형 또는 P-형 다이아몬드 반도체 재료를 만들기 위한 개량된 보강 확산방법을 개략도, 제2A도는 N-형 도판트용 다이아몬드 재료내의 에너지 레벨을 도시하는 다이어그램, 제2B도는 P-형 도판트용 다이아몬드 재료내의 에너지 레벨을 도시하는 다이어그램, 제3도는 불순물 영역을 만드는데 사용되는 레이저와 불순물이 놓여있는 다이아몬드 기판의 사시도.
Claims (20)
- (a) 불활성 가스 또는 진공 용기내의 기판홀더상에 다이아몬드 타겟기판 재료를 놓은 단게와, (b) 상기 타겟 기판 재료상에 불순물을 놓는 단계와, (c) 상기 타겟 기판 재료를 가로질러 전압 전위를 발생하는 단계와, (d) 상기 타겟 기판 재료의 적어도 일부분을 가열하는 단계와, (e) 상기 (c)와 (d) 단계의 실행동안 상기 타겟 기판 재료를 광자로 충격하는 단계를 포함하는 것을 특징으로 하는 반도체 재료 제조 방법.
- 제1항에 있어서, 상기 광자원은 레이저인 것을 특징으로 하느 반도체 재료 제조 방법.
- 제2항에 있어서, 상기 (b) 단계에서 사용된 불순물은 N-형 반도체 재료를 만드는 형태인 것을 특징으로 하는 반도체 재료 제조 방법.
- 제3항에 있어서, 상기 불순물을 리듐, 산소, 불소와 염소의 그룹으로부터 선택하는 것을 특징을 하는 반도체 재료 제조 방법.
- 제2항에 있어서, 상기 불순물은 P-형 반도체 재료를 만드는 형태인 것을 특징으로 하는 반도체 재료제조 방법.
- 제4항에 있어서, 상기 불순물은 리듐염인 것을 특징으로 하는 반도체 재료 제조 방법.
- 제1항에 있어서, 상기 (d)단계를 기판홀더를 가열함으로써 성취하는 것을 특징으로 하는 반도체 재료 제조 방법.
- 제1항에 있어서, 상기 (b)단계를 레이저 빔을 불순물에 초점맞추고 빔을 이동하여 타겟 기판 재료상에 소망의 패턴을 만들므로서 성취하는 것을 특징으로 하는 반도체 재료 제조 방법.
- 제3항에 있어서, 상기 레이저는 헬륨-네온 레이저인 것을 특징으로 하는 반도체 재료 제조 방법.
- (a) 불활성 가스 또는 진공 용기내의 기판홀더상에 결정성 타겟 기판 재료를 놓은 단계와, (b)상기 결정성 타겟 기판 재료상에 불순물을 놓는 단계와, (c) 상기 타겟 기판 재료를 가로질러 전기장을 발생하는 단계와, (d) 상기 타겟 기판 재료의 적어도 일부분을 가열하는 단계와, (e) 상기 (c)와 (d)단계의 실행동안, 상기 불순물에서 나온 원자가 타겟 기판재료로 확산되어지도록, 상기 타겟 기판 재료를 광자로 충격하는 단계를 포함하는 것을 특징으로 하는 반도체 재료 제조 방법.
- 제10항에 있어서, 상기 결정성 타겟 기판 재료는 다이아몬드인 것을 특징으로 하는 반도체 재료 제조 방법.
- 제11항에 있어서, 상기 단계(e)를 레이저로 수행하는 것을 특징으로 하는 반도체 재료 제조 방법.
- 제12항에 있어서, 상기 (b)단계에서 사용된 불순물은 N-형 반도체 재료를 만드는 형태인 것을 특징으로 하는 반도체 재료 제조 방법.
- 제13항에 있어서, 상기 불순물을 리듐, 산소, 불소와 염소의 그룹으로부터 선택하는 것을 특징으로 하는 바도체 재료 제조 방법.
- 제12항에 있어서, 상기 불순물은 P-형 반도체 재료를 만드는 형태인 것을 특징으로 하는 반도체 재료 제조 방법.
- 제14항에 있어서, 상기 불순물은 리듐염인 것을 특징으로 하는 반도체 재료 제조 방법.
- 제10항에 있어서, 상기 (d)단계를 기판홀더를 가열함으로서 성취하는 것을 특징으로 하는 반도체 재료 제조 방법.
- 제10항에 있어서, 상기(b)단계를 레이저 빔을 불순물에 초점맞추고 빔을 이동하여 타겟 기판 제료상 소망의 패턴을 만듬으로서 성취하는 것을 특징으로 하는 반도체 재료 제조 방법.
- 제13항에 있어서, 상기 레이저는 헬륨-네온 레이저인 것을 특징으로 하는 반도체 재료 제조 방법.
- 제10항에 있어서, 상기 단계(e)를 수행하는데, 광자가 불순물의 활성에너지(Ea)보다 큰 에너지(Ep를 가지도록 광자원을 제공하는 것을 특징으로 하는 반도체 재료 제조 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/313,641 US5597762A (en) | 1994-09-27 | 1994-09-27 | Field-enhanced diffusion using optical activation |
US313,641 | 1994-09-27 | ||
PCT/US1995/012432 WO1996010264A1 (en) | 1994-09-27 | 1995-09-26 | Field-enhanced diffusion using optical activation |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970706602A true KR970706602A (ko) | 1997-11-03 |
Family
ID=23216514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970702007A KR970706602A (ko) | 1994-09-27 | 1995-09-26 | 광학 활성을 사용하는 필드-보강 확산법(Field-enhanced diffusion using optical activation) |
Country Status (8)
Country | Link |
---|---|
US (1) | US5597762A (ko) |
EP (1) | EP0784865B1 (ko) |
JP (1) | JPH10509559A (ko) |
KR (1) | KR970706602A (ko) |
AT (1) | ATE268944T1 (ko) |
CA (1) | CA2201112A1 (ko) |
DE (1) | DE69533136T2 (ko) |
WO (1) | WO1996010264A1 (ko) |
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Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56165371A (en) * | 1980-05-26 | 1981-12-18 | Shunpei Yamazaki | Semiconductor device |
US5002899A (en) * | 1988-09-30 | 1991-03-26 | Massachusetts Institute Of Technology | Electrical contacts on diamond |
US5055424A (en) * | 1989-06-29 | 1991-10-08 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating ohmic contacts on semiconducting diamond |
US5210431A (en) * | 1989-07-06 | 1993-05-11 | Sumitomo Electric Industries, Ltd. | Ohmic connection electrodes for p-type semiconductor diamonds |
JPH0358480A (ja) * | 1989-07-26 | 1991-03-13 | Sumitomo Electric Ind Ltd | 半導体ダイヤモンドのオーミツク接続電極 |
JPH03105974A (ja) * | 1989-09-19 | 1991-05-02 | Kobe Steel Ltd | 多結晶ダイヤ薄膜合成によるシヨツトキー・ダイオードの製作法 |
US5243199A (en) * | 1990-01-19 | 1993-09-07 | Sumitomo Electric Industries, Ltd. | High frequency device |
JPH05117089A (ja) * | 1991-10-25 | 1993-05-14 | Sumitomo Electric Ind Ltd | ダイヤモンドのn型及びp型の形成方法 |
US5382809A (en) * | 1992-09-14 | 1995-01-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device including semiconductor diamond |
US5382808A (en) * | 1993-05-14 | 1995-01-17 | Kobe Steel, Usa Inc. | Metal boride ohmic contact on diamond and method for making same |
DE4331937A1 (de) * | 1993-09-16 | 1994-03-17 | Ulrich Prof Dr Mohr | Verfahren zur Eindiffusion von Dotanten in Halbleiterfestkörper |
-
1994
- 1994-09-27 US US08/313,641 patent/US5597762A/en not_active Expired - Lifetime
-
1995
- 1995-09-26 WO PCT/US1995/012432 patent/WO1996010264A1/en active IP Right Grant
- 1995-09-26 JP JP8512020A patent/JPH10509559A/ja active Pending
- 1995-09-26 KR KR1019970702007A patent/KR970706602A/ko not_active Application Discontinuation
- 1995-09-26 EP EP95935183A patent/EP0784865B1/en not_active Expired - Lifetime
- 1995-09-26 AT AT95935183T patent/ATE268944T1/de not_active IP Right Cessation
- 1995-09-26 DE DE69533136T patent/DE69533136T2/de not_active Expired - Fee Related
- 1995-09-26 CA CA002201112A patent/CA2201112A1/en not_active Abandoned
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WO1996010264A1 (en) | 1996-04-04 |
JPH10509559A (ja) | 1998-09-14 |
EP0784865A1 (en) | 1997-07-23 |
ATE268944T1 (de) | 2004-06-15 |
US5597762A (en) | 1997-01-28 |
EP0784865B1 (en) | 2004-06-09 |
DE69533136T2 (de) | 2004-09-30 |
CA2201112A1 (en) | 1996-04-04 |
DE69533136D1 (de) | 2004-07-15 |
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