DE69533136D1 - Diffundierung mit feldverstärkung und optischer aktivierung - Google Patents
Diffundierung mit feldverstärkung und optischer aktivierungInfo
- Publication number
- DE69533136D1 DE69533136D1 DE69533136T DE69533136T DE69533136D1 DE 69533136 D1 DE69533136 D1 DE 69533136D1 DE 69533136 T DE69533136 T DE 69533136T DE 69533136 T DE69533136 T DE 69533136T DE 69533136 D1 DE69533136 D1 DE 69533136D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor material
- diffusion
- optical activation
- creating
- high voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009792 diffusion process Methods 0.000 title abstract 2
- 230000004913 activation Effects 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 230000002787 reinforcement Effects 0.000 title 1
- 239000000463 material Substances 0.000 abstract 7
- 239000004065 semiconductor Substances 0.000 abstract 7
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 239000010432 diamond Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/222—Lithium-drift
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US313641 | 1994-09-27 | ||
| US08/313,641 US5597762A (en) | 1994-09-27 | 1994-09-27 | Field-enhanced diffusion using optical activation |
| PCT/US1995/012432 WO1996010264A1 (en) | 1994-09-27 | 1995-09-26 | Field-enhanced diffusion using optical activation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69533136D1 true DE69533136D1 (de) | 2004-07-15 |
| DE69533136T2 DE69533136T2 (de) | 2004-09-30 |
Family
ID=23216514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69533136T Expired - Fee Related DE69533136T2 (de) | 1994-09-27 | 1995-09-26 | Diffundierung mit feldverstärkung und optischer aktivierung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5597762A (de) |
| EP (1) | EP0784865B1 (de) |
| JP (1) | JPH10509559A (de) |
| KR (1) | KR970706602A (de) |
| AT (1) | ATE268944T1 (de) |
| CA (1) | CA2201112A1 (de) |
| DE (1) | DE69533136T2 (de) |
| WO (1) | WO1996010264A1 (de) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5888113A (en) * | 1997-03-27 | 1999-03-30 | Universities Research Association, Inc. | Process for making a cesiated diamond film field emitter and field emitter formed therefrom |
| US6355543B1 (en) * | 1998-09-29 | 2002-03-12 | Advanced Micro Devices, Inc. | Laser annealing for forming shallow source/drain extension for MOS transistor |
| US6527854B1 (en) | 1999-06-16 | 2003-03-04 | Mark A. Prelas | Method for contact diffusion of impurities into diamond and other crystalline structures and products |
| AT7491U1 (de) * | 2004-07-15 | 2005-04-25 | Plansee Ag | Werkstoff für leitbahnen aus kupferlegierung |
| US7741147B2 (en) * | 2006-12-22 | 2010-06-22 | Palo Alto Research Center Incorporated | Method of field-controlled diffusion and devices formed thereby |
| JP2008227142A (ja) * | 2007-03-13 | 2008-09-25 | Tohoku Univ | 不純物のドーピング方法及びこれを用いた半導体装置の製造方法 |
| US8962976B2 (en) * | 2009-06-25 | 2015-02-24 | Empire Technology Development Llc | Doped diamond solar cell |
| US10012704B2 (en) | 2015-11-04 | 2018-07-03 | Lockheed Martin Corporation | Magnetic low-pass filter |
| US9638821B2 (en) | 2014-03-20 | 2017-05-02 | Lockheed Martin Corporation | Mapping and monitoring of hydraulic fractures using vector magnetometers |
| US9910104B2 (en) | 2015-01-23 | 2018-03-06 | Lockheed Martin Corporation | DNV magnetic field detector |
| US9835693B2 (en) * | 2016-01-21 | 2017-12-05 | Lockheed Martin Corporation | Higher magnetic sensitivity through fluorescence manipulation by phonon spectrum control |
| US9853837B2 (en) | 2014-04-07 | 2017-12-26 | Lockheed Martin Corporation | High bit-rate magnetic communication |
| US10120039B2 (en) | 2015-11-20 | 2018-11-06 | Lockheed Martin Corporation | Apparatus and method for closed loop processing for a magnetic detection system |
| US10168393B2 (en) | 2014-09-25 | 2019-01-01 | Lockheed Martin Corporation | Micro-vacancy center device |
| US9910105B2 (en) | 2014-03-20 | 2018-03-06 | Lockheed Martin Corporation | DNV magnetic field detector |
| US10241158B2 (en) | 2015-02-04 | 2019-03-26 | Lockheed Martin Corporation | Apparatus and method for estimating absolute axes' orientations for a magnetic detection system |
| US10088336B2 (en) | 2016-01-21 | 2018-10-02 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensed ferro-fluid hydrophone |
| US9541610B2 (en) | 2015-02-04 | 2017-01-10 | Lockheed Martin Corporation | Apparatus and method for recovery of three dimensional magnetic field from a magnetic detection system |
| US9817081B2 (en) | 2016-01-21 | 2017-11-14 | Lockheed Martin Corporation | Magnetometer with light pipe |
| US9824597B2 (en) | 2015-01-28 | 2017-11-21 | Lockheed Martin Corporation | Magnetic navigation methods and systems utilizing power grid and communication network |
| CA2945016A1 (en) | 2014-04-07 | 2015-10-15 | Lockheed Martin Corporation | Energy efficient controlled magnetic field generator circuit |
| KR20170108055A (ko) | 2015-01-23 | 2017-09-26 | 록히드 마틴 코포레이션 | 자기 검출 시스템에서의 고감도 자력 측정 및 신호 처리를 위한 장치 및 방법 |
| BR112017016261A2 (pt) | 2015-01-28 | 2018-03-27 | Lockheed Martin Corporation | carga de energia in situ |
| WO2017087014A1 (en) | 2015-11-20 | 2017-05-26 | Lockheed Martin Corporation | Apparatus and method for hypersensitivity detection of magnetic field |
| WO2017095454A1 (en) | 2015-12-01 | 2017-06-08 | Lockheed Martin Corporation | Communication via a magnio |
| WO2017123261A1 (en) | 2016-01-12 | 2017-07-20 | Lockheed Martin Corporation | Defect detector for conductive materials |
| EP3405603A4 (de) | 2016-01-21 | 2019-10-16 | Lockheed Martin Corporation | Diamantstickstoffleerstellensensor mit schaltung auf diamant |
| WO2017127096A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensor with dual rf sources |
| WO2017127079A1 (en) | 2016-01-21 | 2017-07-27 | Lockheed Martin Corporation | Ac vector magnetic anomaly detection with diamond nitrogen vacancies |
| AU2016387314A1 (en) | 2016-01-21 | 2018-09-06 | Lockheed Martin Corporation | Magnetometer with a light emitting diode |
| AU2016388316A1 (en) | 2016-01-21 | 2018-09-06 | Lockheed Martin Corporation | Diamond nitrogen vacancy sensor with common RF and magnetic fields generator |
| US10345395B2 (en) | 2016-12-12 | 2019-07-09 | Lockheed Martin Corporation | Vector magnetometry localization of subsurface liquids |
| US10274550B2 (en) | 2017-03-24 | 2019-04-30 | Lockheed Martin Corporation | High speed sequential cancellation for pulsed mode |
| US10359479B2 (en) | 2017-02-20 | 2019-07-23 | Lockheed Martin Corporation | Efficient thermal drift compensation in DNV vector magnetometry |
| US10330744B2 (en) | 2017-03-24 | 2019-06-25 | Lockheed Martin Corporation | Magnetometer with a waveguide |
| US10371765B2 (en) | 2016-07-11 | 2019-08-06 | Lockheed Martin Corporation | Geolocation of magnetic sources using vector magnetometer sensors |
| US10281550B2 (en) | 2016-11-14 | 2019-05-07 | Lockheed Martin Corporation | Spin relaxometry based molecular sequencing |
| US10408890B2 (en) | 2017-03-24 | 2019-09-10 | Lockheed Martin Corporation | Pulsed RF methods for optimization of CW measurements |
| US10145910B2 (en) | 2017-03-24 | 2018-12-04 | Lockheed Martin Corporation | Photodetector circuit saturation mitigation for magneto-optical high intensity pulses |
| US10677953B2 (en) | 2016-05-31 | 2020-06-09 | Lockheed Martin Corporation | Magneto-optical detecting apparatus and methods |
| US10527746B2 (en) | 2016-05-31 | 2020-01-07 | Lockheed Martin Corporation | Array of UAVS with magnetometers |
| US10228429B2 (en) | 2017-03-24 | 2019-03-12 | Lockheed Martin Corporation | Apparatus and method for resonance magneto-optical defect center material pulsed mode referencing |
| US10338163B2 (en) | 2016-07-11 | 2019-07-02 | Lockheed Martin Corporation | Multi-frequency excitation schemes for high sensitivity magnetometry measurement with drift error compensation |
| US10345396B2 (en) | 2016-05-31 | 2019-07-09 | Lockheed Martin Corporation | Selected volume continuous illumination magnetometer |
| US10317279B2 (en) | 2016-05-31 | 2019-06-11 | Lockheed Martin Corporation | Optical filtration system for diamond material with nitrogen vacancy centers |
| US20170343621A1 (en) | 2016-05-31 | 2017-11-30 | Lockheed Martin Corporation | Magneto-optical defect center magnetometer |
| US10571530B2 (en) | 2016-05-31 | 2020-02-25 | Lockheed Martin Corporation | Buoy array of magnetometers |
| US9983255B2 (en) * | 2016-08-15 | 2018-05-29 | The Boeing Company | Apparatus for testing dielectric breakdown voltage |
| US10459041B2 (en) | 2017-03-24 | 2019-10-29 | Lockheed Martin Corporation | Magnetic detection system with highly integrated diamond nitrogen vacancy sensor |
| US10379174B2 (en) | 2017-03-24 | 2019-08-13 | Lockheed Martin Corporation | Bias magnet array for magnetometer |
| US10371760B2 (en) | 2017-03-24 | 2019-08-06 | Lockheed Martin Corporation | Standing-wave radio frequency exciter |
| US10338164B2 (en) | 2017-03-24 | 2019-07-02 | Lockheed Martin Corporation | Vacancy center material with highly efficient RF excitation |
| US10801982B2 (en) * | 2017-06-29 | 2020-10-13 | University of Pittsburgh—of the Commonwealth System of Higher Education | Graphitic carbon nitride sensors |
| US10787892B2 (en) * | 2018-09-19 | 2020-09-29 | Jefferson Science Associates, Llc | In situ SRF cavity processing using optical ionization of gases |
| US10816507B2 (en) * | 2019-03-20 | 2020-10-27 | Raytheon Technologies Corporation | Apparatus and method and system for inspecting a component of a gas turbine engine |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56165371A (en) * | 1980-05-26 | 1981-12-18 | Shunpei Yamazaki | Semiconductor device |
| US5002899A (en) * | 1988-09-30 | 1991-03-26 | Massachusetts Institute Of Technology | Electrical contacts on diamond |
| US5055424A (en) * | 1989-06-29 | 1991-10-08 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating ohmic contacts on semiconducting diamond |
| US5210431A (en) * | 1989-07-06 | 1993-05-11 | Sumitomo Electric Industries, Ltd. | Ohmic connection electrodes for p-type semiconductor diamonds |
| JPH0358480A (ja) * | 1989-07-26 | 1991-03-13 | Sumitomo Electric Ind Ltd | 半導体ダイヤモンドのオーミツク接続電極 |
| JPH03105974A (ja) * | 1989-09-19 | 1991-05-02 | Kobe Steel Ltd | 多結晶ダイヤ薄膜合成によるシヨツトキー・ダイオードの製作法 |
| US5243199A (en) * | 1990-01-19 | 1993-09-07 | Sumitomo Electric Industries, Ltd. | High frequency device |
| JPH05117089A (ja) * | 1991-10-25 | 1993-05-14 | Sumitomo Electric Ind Ltd | ダイヤモンドのｎ型及びｐ型の形成方法 |
| US5382809A (en) * | 1992-09-14 | 1995-01-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device including semiconductor diamond |
| US5382808A (en) * | 1993-05-14 | 1995-01-17 | Kobe Steel, Usa Inc. | Metal boride ohmic contact on diamond and method for making same |
| DE4331937A1 (de) * | 1993-09-16 | 1994-03-17 | Ulrich Prof Dr Mohr | Verfahren zur Eindiffusion von Dotanten in Halbleiterfestkörper |
-
1994
- 1994-09-27 US US08/313,641 patent/US5597762A/en not_active Expired - Lifetime
-
1995
- 1995-09-26 WO PCT/US1995/012432 patent/WO1996010264A1/en active IP Right Grant
- 1995-09-26 DE DE69533136T patent/DE69533136T2/de not_active Expired - Fee Related
- 1995-09-26 KR KR1019970702007A patent/KR970706602A/ko not_active Application Discontinuation
- 1995-09-26 AT AT95935183T patent/ATE268944T1/de not_active IP Right Cessation
- 1995-09-26 EP EP95935183A patent/EP0784865B1/de not_active Expired - Lifetime
- 1995-09-26 CA CA002201112A patent/CA2201112A1/en not_active Abandoned
- 1995-09-26 JP JP8512020A patent/JPH10509559A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0784865A1 (de) | 1997-07-23 |
| DE69533136T2 (de) | 2004-09-30 |
| US5597762A (en) | 1997-01-28 |
| CA2201112A1 (en) | 1996-04-04 |
| ATE268944T1 (de) | 2004-06-15 |
| WO1996010264A1 (en) | 1996-04-04 |
| JPH10509559A (ja) | 1998-09-14 |
| EP0784865B1 (de) | 2004-06-09 |
| KR970706602A (ko) | 1997-11-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |