JPS5563858A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5563858A
JPS5563858A JP13656778A JP13656778A JPS5563858A JP S5563858 A JPS5563858 A JP S5563858A JP 13656778 A JP13656778 A JP 13656778A JP 13656778 A JP13656778 A JP 13656778A JP S5563858 A JPS5563858 A JP S5563858A
Authority
JP
Japan
Prior art keywords
resistor
region
diffused
integration
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13656778A
Other languages
Japanese (ja)
Inventor
Kenji Okada
Yukio Minato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13656778A priority Critical patent/JPS5563858A/en
Publication of JPS5563858A publication Critical patent/JPS5563858A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a high resistance for enabling voltage clamping and raise the degree of integration, by providing a pn junction in a part of a thin polycrystalline silicon film resistor. CONSTITUTION:A thin polycrystalline silicon film 3 with a thickness of 0.5mu or the like is produced by gas phase reaction on a semiconductor substrate 2. The film 3 is selectively oxidized by heat ot make an oxide 5. Boron is diffused at a high concentration in a resistor region to produce a p<+>-type region 6. Phosphorus is diffused in the resistor region to produce an n<+>-type region. A pn junction is thus provided. As a result, the resistance of the resistor is made high enough to enable voltage clamping and the degree of integration is raised.
JP13656778A 1978-11-06 1978-11-06 Semiconductor device Pending JPS5563858A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13656778A JPS5563858A (en) 1978-11-06 1978-11-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13656778A JPS5563858A (en) 1978-11-06 1978-11-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5563858A true JPS5563858A (en) 1980-05-14

Family

ID=15178262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13656778A Pending JPS5563858A (en) 1978-11-06 1978-11-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563858A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01114068A (en) * 1987-10-27 1989-05-02 Nec Ic Microcomput Syst Ltd Semiconductor device
US4885627A (en) * 1988-10-18 1989-12-05 International Business Machines Corporation Method and structure for reducing resistance in integrated circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01114068A (en) * 1987-10-27 1989-05-02 Nec Ic Microcomput Syst Ltd Semiconductor device
US4885627A (en) * 1988-10-18 1989-12-05 International Business Machines Corporation Method and structure for reducing resistance in integrated circuits

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