KR970053557A - 반도체 소자의 제조방법 - Google Patents

반도체 소자의 제조방법 Download PDF

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Publication number
KR970053557A
KR970053557A KR1019950065693A KR19950065693A KR970053557A KR 970053557 A KR970053557 A KR 970053557A KR 1019950065693 A KR1019950065693 A KR 1019950065693A KR 19950065693 A KR19950065693 A KR 19950065693A KR 970053557 A KR970053557 A KR 970053557A
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KR
South Korea
Prior art keywords
sog film
insulating film
film
disconnection
exposed
Prior art date
Application number
KR1019950065693A
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English (en)
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KR100314742B1 (ko
Inventor
유경식
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950065693A priority Critical patent/KR100314742B1/ko
Publication of KR970053557A publication Critical patent/KR970053557A/ko
Application granted granted Critical
Publication of KR100314742B1 publication Critical patent/KR100314742B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 SOG막이 일부 노출되는 비아홀을 형성한 후, 금속열처리를 통해 SOG막내의 수분을 제거함과 동시에 노출된 SOG막의 표면에 치밀화된 경화층이 형성되도록 한다.
따라서, 본 발명은 비아홀의 측벽에 노출된 SOG막의 표면에 경화층을 형성하므로써, SOG막 내부로 수분유입형상을 억제하는 한편 고온에서 금속막 증착시 비아홀 측벽면에 노출된 SOG막으로부터 수분 방출을 억제하여 금속막의 층덮힘성을 개성시키므로 단선으로 인한 불량이 감소되어 수율이 증가되고, 소자의 동작으로 인한 단선의 층덮힘성을 개선시키므로 단선으로 인한 불량이 감소되어 수율이 증가되고, 소자의 동작으로 인한 단선의 가능성을 최소화하여 소자의 신뢰성을 증가시킬 수 있을 뿐만 아니라 보다 고집적한 소자의 제조를 실현할 수 있게 한다.

Description

반도체 소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2A및 2B도는 본 발명의 실시예에 의한 반도체 소자의 제조방법을 설명하기 위해 도시한 소자의 단면도이다.

Claims (4)

  1. 반도체 소자의 제조방법에 있어서, 폴리-금속 층간절연막상에 하부 금속배선이 형성된 실리콘 기판이 제공되고, 상기 하부 금속배선을 포함한 상기 폴리-금속 층간절연막사에 제1절연막, SOG막 및 제2절연막을 순차적으로 형성하는 단계; 비아 콘택 마스크를 사용한 식각공정으로 상기 제2절연막, 상기 SOG막 및 상기 제1절연막을 순차적으로 식각함에 의해 비아홀이 형성되는 단계; 급속열처리를 실사하여 상기 비아홀의 측벽에 노출된 상기 SOG막의 표면에 경화층이 형성되는 단계; 및 상기 비아홀을 포함한 상기 제2절연막상에 상부 금속배선을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 제조방법.
  2. 제1항에 있어서, 상기 급속열처리는 N2나 진공상태로 600내지 800℃의 온도범위에서 5내지 60초간 실시하는 것을 특징으로 하는 반도체 소자의 제조방법.
  3. 제1항에 있어서, 상기 하부 금속배선을 텅스텐 및 구리와 같은 내화 금속을 사용하여 형성되는 것을 특징으로 하는 반도체 소자의 제조방법.
  4. 제1항에 있어서, 상기 제1및 제2절연막은 산화막인 것을 특징으로 하는 반도체 소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950065693A 1995-12-29 1995-12-29 반도체 소자의 제조방법 KR100314742B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950065693A KR100314742B1 (ko) 1995-12-29 1995-12-29 반도체 소자의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950065693A KR100314742B1 (ko) 1995-12-29 1995-12-29 반도체 소자의 제조방법

Publications (2)

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KR970053557A true KR970053557A (ko) 1997-07-31
KR100314742B1 KR100314742B1 (ko) 2002-11-07

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100613334B1 (ko) * 1999-12-31 2006-08-21 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100613334B1 (ko) * 1999-12-31 2006-08-21 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법

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Publication number Publication date
KR100314742B1 (ko) 2002-11-07

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