KR970009974B1 - 반도체 장치의 제조방법 - Google Patents
반도체 장치의 제조방법 Download PDFInfo
- Publication number
- KR970009974B1 KR970009974B1 KR1019930032280A KR930032280A KR970009974B1 KR 970009974 B1 KR970009974 B1 KR 970009974B1 KR 1019930032280 A KR1019930032280 A KR 1019930032280A KR 930032280 A KR930032280 A KR 930032280A KR 970009974 B1 KR970009974 B1 KR 970009974B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- hto
- pattern
- heat treatment
- dry etching
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 86
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 61
- 229920005591 polysilicon Polymers 0.000 claims abstract description 61
- 239000006227 byproduct Substances 0.000 claims abstract description 55
- 238000001312 dry etching Methods 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 36
- 230000008018 melting Effects 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 4
- 229910019044 CoSix Inorganic materials 0.000 claims description 2
- 239000003870 refractory metal Substances 0.000 abstract 2
- 238000009835 boiling Methods 0.000 description 17
- 125000006850 spacer group Chemical group 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910008486 TiSix Inorganic materials 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 235000019506 cigar Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930032280A KR970009974B1 (ko) | 1993-12-31 | 1993-12-31 | 반도체 장치의 제조방법 |
| TW083112299A TW262567B (ja) | 1993-12-31 | 1994-12-28 | |
| JP33895494A JP3652392B2 (ja) | 1993-12-31 | 1994-12-28 | 半導体装置の製造方法 |
| US08/611,432 US5674782A (en) | 1993-12-31 | 1996-03-04 | Method for efficiently removing by-products produced in dry-etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930032280A KR970009974B1 (ko) | 1993-12-31 | 1993-12-31 | 반도체 장치의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950021193A KR950021193A (ko) | 1995-07-26 |
| KR970009974B1 true KR970009974B1 (ko) | 1997-06-19 |
Family
ID=19375146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930032280A KR970009974B1 (ko) | 1993-12-31 | 1993-12-31 | 반도체 장치의 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3652392B2 (ja) |
| KR (1) | KR970009974B1 (ja) |
| TW (1) | TW262567B (ja) |
-
1993
- 1993-12-31 KR KR1019930032280A patent/KR970009974B1/ko not_active IP Right Cessation
-
1994
- 1994-12-28 TW TW083112299A patent/TW262567B/zh active
- 1994-12-28 JP JP33895494A patent/JP3652392B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3652392B2 (ja) | 2005-05-25 |
| TW262567B (ja) | 1995-11-11 |
| JPH07254602A (ja) | 1995-10-03 |
| KR950021193A (ko) | 1995-07-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20110930 Year of fee payment: 15 |
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| FPAY | Annual fee payment |
Payment date: 20120925 Year of fee payment: 16 |
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| EXPY | Expiration of term |