KR970009862B1 - 반도체 소자 제조 방법 - Google Patents

반도체 소자 제조 방법 Download PDF

Info

Publication number
KR970009862B1
KR970009862B1 KR1019880005663A KR880005663A KR970009862B1 KR 970009862 B1 KR970009862 B1 KR 970009862B1 KR 1019880005663 A KR1019880005663 A KR 1019880005663A KR 880005663 A KR880005663 A KR 880005663A KR 970009862 B1 KR970009862 B1 KR 970009862B1
Authority
KR
South Korea
Prior art keywords
layer
etching
titanium
manufacturing
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019880005663A
Other languages
English (en)
Korean (ko)
Other versions
KR880014662A (ko
Inventor
율레스 반 오에켈 야꿰스
Original Assignee
엔. 브이. 필립스 글로아이람펜파브리켄
이반 밀러 레르너
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엔. 브이. 필립스 글로아이람펜파브리켄, 이반 밀러 레르너 filed Critical 엔. 브이. 필립스 글로아이람펜파브리켄
Publication of KR880014662A publication Critical patent/KR880014662A/ko
Application granted granted Critical
Publication of KR970009862B1 publication Critical patent/KR970009862B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019880005663A 1987-05-18 1988-05-16 반도체 소자 제조 방법 Expired - Fee Related KR970009862B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8701184 1987-05-18
NL8701184A NL8701184A (nl) 1987-05-18 1987-05-18 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
KR880014662A KR880014662A (ko) 1988-12-24
KR970009862B1 true KR970009862B1 (ko) 1997-06-18

Family

ID=19850032

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880005663A Expired - Fee Related KR970009862B1 (ko) 1987-05-18 1988-05-16 반도체 소자 제조 방법

Country Status (6)

Country Link
US (1) US4814293A (https=)
EP (1) EP0292057B1 (https=)
JP (1) JPS63305518A (https=)
KR (1) KR970009862B1 (https=)
DE (1) DE3874411T2 (https=)
NL (1) NL8701184A (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229311A (en) * 1989-03-22 1993-07-20 Intel Corporation Method of reducing hot-electron degradation in semiconductor devices
EP0517288B1 (en) * 1991-04-29 1996-04-10 Koninklijke Philips Electronics N.V. Diffusion barrier enhancement in metallization structure for semiconductor device fabrication
US5246732A (en) * 1991-07-16 1993-09-21 U.S. Philips Corporation Method of providing a copper pattern on a dielectric substrate
US5419808A (en) * 1993-03-19 1995-05-30 Mitsubishi Denki Kabushiki Kaisha Etching solution and etching method for semiconductors
JP3135185B2 (ja) * 1993-03-19 2001-02-13 三菱電機株式会社 半導体エッチング液，半導体エッチング方法，及びＧａＡｓ面の判定方法
US5374328A (en) * 1993-03-25 1994-12-20 Watkins Johnson Company Method of fabricating group III-V compound
US5462638A (en) * 1994-06-15 1995-10-31 International Business Machines Corporation Selective etching of TiW for C4 fabrication
JPH08162425A (ja) * 1994-12-06 1996-06-21 Mitsubishi Electric Corp 半導体集積回路装置の製造方法および製造装置
US5800726A (en) * 1995-07-26 1998-09-01 International Business Machines Corporation Selective chemical etching in microelectronics fabrication
US5759437A (en) * 1996-10-31 1998-06-02 International Business Machines Corporation Etching of Ti-W for C4 rework
JPH1187262A (ja) * 1997-09-03 1999-03-30 Toshiba Corp 半導体装置及びその製造方法
US6015505A (en) * 1997-10-30 2000-01-18 International Business Machines Corporation Process improvements for titanium-tungsten etching in the presence of electroplated C4's
US6436300B2 (en) 1998-07-30 2002-08-20 Motorola, Inc. Method of manufacturing electronic components
US6332988B1 (en) 1999-06-02 2001-12-25 International Business Machines Corporation Rework process
KR100379824B1 (ko) 2000-12-20 2003-04-11 엘지.필립스 엘시디 주식회사 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판
US7521366B2 (en) * 2001-12-12 2009-04-21 Lg Display Co., Ltd. Manufacturing method of electro line for liquid crystal display device
DE10230252B4 (de) * 2002-07-04 2013-10-17 Robert Bosch Gmbh Verfahren zur Herstellung integrierter Mikrosysteme
US7244671B2 (en) * 2003-07-25 2007-07-17 Unitive International Limited Methods of forming conductive structures including titanium-tungsten base layers and related structures
WO2006068091A1 (ja) * 2004-12-20 2006-06-29 Stella Chemifa Corporation 微細加工処理剤、及びそれを用いた微細加工処理方法
US7425278B2 (en) * 2006-11-28 2008-09-16 International Business Machines Corporation Process of etching a titanium/tungsten surface and etchant used therein
US8025812B2 (en) * 2007-04-27 2011-09-27 International Business Machines Corporation Selective etch of TiW for capture pad formation
JP2009076601A (ja) * 2007-09-19 2009-04-09 Nagase Chemtex Corp エッチング溶液
JP5523325B2 (ja) * 2008-09-09 2014-06-18 昭和電工株式会社 チタン系金属、タングステン系金属、チタンタングステン系金属またはそれらの窒化物のエッチング液
JP5169959B2 (ja) * 2009-04-08 2013-03-27 信越半導体株式会社 発光素子の製造方法
US20150104952A1 (en) 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
WO2015054464A1 (en) * 2013-10-11 2015-04-16 E. I. Du Pont De Nemours And Company Removal composition for selectively removing hard mask and methods thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841931A (en) * 1973-07-23 1974-10-15 Bell Telephone Labor Inc Mild acid etch for tungsten
SU707949A1 (ru) * 1976-12-14 1980-01-05 Институт химии Уральского научного центра АН СССР Раствор дл травлени вольфрама с поверхности алюмини
US4443295A (en) * 1983-06-13 1984-04-17 Fairchild Camera & Instrument Corp. Method of etching refractory metal film on semiconductor structures utilizing triethylamine and H2 O2

Also Published As

Publication number Publication date
NL8701184A (nl) 1988-12-16
EP0292057A1 (en) 1988-11-23
US4814293A (en) 1989-03-21
DE3874411D1 (de) 1992-10-15
JPS63305518A (ja) 1988-12-13
JPH0257339B2 (https=) 1990-12-04
EP0292057B1 (en) 1992-09-09
DE3874411T2 (de) 1993-04-08
KR880014662A (ko) 1988-12-24

Similar Documents

Publication Publication Date Title
KR970009862B1 (ko) 반도체 소자 제조 방법
US4269654A (en) Silicon nitride and silicon oxide etchant
US3867218A (en) Method of etching a pattern in a silicon nitride layer
KR20010041688A (ko) 무기성 반반사 코팅의 선택적 습식에칭방법
US5462891A (en) Process for manufacturing a semiconductor device using NH4 OH-H2 O2 based etchant for Ti based thin film
US4508591A (en) Polymethyl methacrylate compatible silicon dioxide complexing agent
IL30464A (en) Method of fabricating semiconductor contact and device made by said method
IE53902B1 (en) Process for fabricating a semiconductor device having a phosphosilicate glass layer
JPS6064431A (ja) 半導体構成体上の耐火金属膜をエツチングする方法
US4322264A (en) Method for selective etching of titaniumdioxide relative to aluminum
US3639186A (en) Process for the production of finely etched patterns
US4040892A (en) Method of etching materials including a major constituent of tin oxide
JPH0311093B2 (https=)
KR940010245A (ko) 반도체소자의 콘택홀 및 그 제조방법
JPS5923106B2 (ja) 半導体装置の製造方法
JPS6193629A (ja) 半導体装置の製造方法
JPH05299810A (ja) 配線パターン形成用エッチング溶液
SU1552940A1 (ru) Способ формировани знаков совмещени на полупроводниковой подложке
KR100196523B1 (ko) 반도체 소자 제조방법
JP2891847B2 (ja) ＧａＡｓのエッチング方法
EP0068098A2 (en) Process for fabricating a device involving use of a photoresist
JPS63303084A (ja) チタン用エッチング液
JPS5816074A (ja) 金または金合金膜のエツチング方法
KR0138214B1 (ko) 반도체 소자의 본딩패드 산화 방지방법
JPS6086825A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20040608

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20051119

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20051119

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000