KR970008982B1 - 개선된 특성을 가진 화학 증기 증착-제조된 실리콘 탄화물 - Google Patents

개선된 특성을 가진 화학 증기 증착-제조된 실리콘 탄화물 Download PDF

Info

Publication number
KR970008982B1
KR970008982B1 KR1019930024883A KR930024883A KR970008982B1 KR 970008982 B1 KR970008982 B1 KR 970008982B1 KR 1019930024883 A KR1019930024883 A KR 1019930024883A KR 930024883 A KR930024883 A KR 930024883A KR 970008982 B1 KR970008982 B1 KR 970008982B1
Authority
KR
South Korea
Prior art keywords
sic
deposition
less
cvd
deposited
Prior art date
Application number
KR1019930024883A
Other languages
English (en)
Korean (ko)
Other versions
KR940011352A (ko
Inventor
에스.고에라 지텐드라
이.번즈 리
엘. 테일러 레이몬드
Original Assignee
씨 브이 디 인코오포레이티드
제랄드 케이. 화이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 씨 브이 디 인코오포레이티드, 제랄드 케이. 화이트 filed Critical 씨 브이 디 인코오포레이티드
Publication of KR940011352A publication Critical patent/KR940011352A/ko
Application granted granted Critical
Publication of KR970008982B1 publication Critical patent/KR970008982B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Producing Shaped Articles From Materials (AREA)
KR1019930024883A 1992-11-23 1993-11-22 개선된 특성을 가진 화학 증기 증착-제조된 실리콘 탄화물 KR970008982B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97996592A 1992-11-23 1992-11-23
US07/979,965 1992-11-23
US7/979,965 1992-11-23

Publications (2)

Publication Number Publication Date
KR940011352A KR940011352A (ko) 1994-06-21
KR970008982B1 true KR970008982B1 (ko) 1997-06-03

Family

ID=25527249

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930024883A KR970008982B1 (ko) 1992-11-23 1993-11-22 개선된 특성을 가진 화학 증기 증착-제조된 실리콘 탄화물

Country Status (11)

Country Link
US (2) US5604151A (fr)
EP (1) EP0599468B1 (fr)
JP (1) JP2667357B2 (fr)
KR (1) KR970008982B1 (fr)
CA (1) CA2104411C (fr)
DE (1) DE69316172T2 (fr)
HK (1) HK1003034A1 (fr)
IL (1) IL106864A (fr)
MY (1) MY111078A (fr)
SG (1) SG48942A1 (fr)
TW (1) TW337513B (fr)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
US6030661A (en) * 1995-08-04 2000-02-29 Abb Research Ltd. Device and a method for epitaxially growing objects by CVD
JP2851818B2 (ja) * 1995-09-08 1999-01-27 日本ピラー工業株式会社 高エネルギビーム用光学要素構成材
US5683028A (en) * 1996-05-03 1997-11-04 Cvd, Incorporated Bonding of silicon carbide components
JP3524679B2 (ja) * 1996-06-21 2004-05-10 東芝セラミックス株式会社 高純度ＣＶＤ−ＳｉＣ質の半導体熱処理用部材及びその製造方法
US6780464B2 (en) * 1997-08-11 2004-08-24 Torrex Equipment Thermal gradient enhanced CVD deposition at low pressure
JPH1179846A (ja) * 1997-09-01 1999-03-23 Tokai Carbon Co Ltd 炭化珪素成形体
JP4043003B2 (ja) * 1998-02-09 2008-02-06 東海カーボン株式会社 ＳｉＣ成形体及びその製造方法
FR2786208B1 (fr) 1998-11-25 2001-02-09 Centre Nat Rech Scient Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre
JP2001048649A (ja) 1999-07-30 2001-02-20 Asahi Glass Co Ltd 炭化ケイ素およびその製造方法
US6936102B1 (en) * 1999-08-02 2005-08-30 Tokyo Electron Limited SiC material, semiconductor processing equipment and method of preparing SiC material therefor
US6939821B2 (en) * 2000-02-24 2005-09-06 Shipley Company, L.L.C. Low resistivity silicon carbide
US7018947B2 (en) * 2000-02-24 2006-03-28 Shipley Company, L.L.C. Low resistivity silicon carbide
TW464977B (en) * 2000-11-03 2001-11-21 United Microelectronics Corp Method for peeling off silicon carbide layer
EP1205573A1 (fr) * 2000-11-10 2002-05-15 Shipley Company LLC Carbure de silicium avec une conductivité thermale élevée
JP3959952B2 (ja) * 2000-11-10 2007-08-15 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP4000552B2 (ja) * 2000-12-27 2007-10-31 スズキ株式会社 窒化鉄薄膜の製造方法
US8202621B2 (en) * 2001-09-22 2012-06-19 Rohm And Haas Company Opaque low resistivity silicon carbide
DE10243022A1 (de) * 2002-09-17 2004-03-25 Degussa Ag Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
US7540920B2 (en) * 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US20040173597A1 (en) * 2003-03-03 2004-09-09 Manoj Agrawal Apparatus for contacting gases at high temperature
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
US7247513B2 (en) * 2003-05-08 2007-07-24 Caracal, Inc. Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
JP4380236B2 (ja) * 2003-06-23 2009-12-09 東京エレクトロン株式会社 載置台及び熱処理装置
US20060008661A1 (en) * 2003-08-01 2006-01-12 Wijesundara Muthu B Manufacturable low-temperature silicon carbide deposition technology
US20050123713A1 (en) * 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
US8114505B2 (en) * 2003-12-05 2012-02-14 Morgan Advanced Ceramics, Inc. Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
WO2008127425A2 (fr) * 2006-11-22 2008-10-23 S.O.I.Tec Silicon On Insulator Technologies Réduction des gaz de réaction provenant du dépôt de nitrure de gallium
CN100577866C (zh) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
JP2010519773A (ja) * 2007-02-27 2010-06-03 シクストロン アドヴァンスド マテリアルズ、インコーポレイテッド 基板上に膜を形成するための方法
US8105649B1 (en) 2007-08-09 2012-01-31 Imaging Systems Technology Fabrication of silicon carbide shell
EP2541559B1 (fr) 2011-06-30 2014-03-26 Rohm and Haas Electronic Materials LLC Article transparent conducteur
US9157146B2 (en) 2011-08-02 2015-10-13 Shincron Co., Ltd. Method for depositing silicon carbide film
CN104619881A (zh) * 2012-08-17 2015-05-13 株式会社Ihi 耐热复合材料的制造方法及制造装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
WO2014148149A1 (fr) * 2013-03-22 2014-09-25 イビデン株式会社 Miroir et procédé de fabrication de ce dernier
JP2015052661A (ja) * 2013-09-06 2015-03-19 イビデン株式会社 反射ミラー
CN110318037B (zh) * 2018-03-30 2021-06-22 揖斐电株式会社 透光性SiC的制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL244520A (fr) * 1958-10-23
GB1031833A (en) * 1963-05-15 1966-06-02 Power Jets Res Dev Ltd Process for treating tungsten
JPS60145992A (ja) * 1983-12-29 1985-08-01 Sharp Corp 炭化珪素単結晶基板の製造方法
US4608326A (en) * 1984-02-13 1986-08-26 Hewlett-Packard Company Silicon carbide film for X-ray masks and vacuum windows
US5010035A (en) * 1985-05-23 1991-04-23 The Regents Of The University Of California Wafer base for silicon carbide semiconductor device
JPS62129000A (ja) * 1985-11-27 1987-06-11 Shin Etsu Chem Co Ltd 炭化けい素ウイスカ−の製造方法
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
JPS6461307A (en) * 1987-08-29 1989-03-08 Ibiden Co Ltd Production of beta-type silicon carbide fine powder
US4912063A (en) * 1987-10-26 1990-03-27 North Carolina State University Growth of beta-sic thin films and semiconductor devices fabricated thereon
US5082695A (en) * 1988-03-08 1992-01-21 501 Fujitsu Limited Method of fabricating an x-ray exposure mask
CA2058809A1 (fr) * 1991-01-07 1992-07-08 Jitendra S. Goela Depot chimique en phase vapeur de silicium et de carbure de silicium aux proprietes optiques ameliorees
JPH051380A (ja) * 1991-06-24 1993-01-08 Hoya Corp 炭化ケイ素の成膜方法
US5225032A (en) * 1991-08-09 1993-07-06 Allied-Signal Inc. Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade
US5374412A (en) * 1992-07-31 1994-12-20 Cvd, Inc. Highly polishable, highly thermally conductive silicon carbide

Also Published As

Publication number Publication date
IL106864A (en) 1997-04-15
IL106864A0 (en) 1993-12-28
SG48942A1 (en) 1998-05-18
CA2104411A1 (fr) 1994-05-24
KR940011352A (ko) 1994-06-21
EP0599468A1 (fr) 1994-06-01
JPH06239609A (ja) 1994-08-30
MY111078A (en) 1999-08-30
HK1003034A1 (en) 1998-09-30
CA2104411C (fr) 1999-01-19
EP0599468B1 (fr) 1998-01-07
DE69316172D1 (de) 1998-02-12
TW337513B (en) 1998-08-01
JP2667357B2 (ja) 1997-10-27
DE69316172T2 (de) 1998-04-16
US5604151A (en) 1997-02-18
US5612132A (en) 1997-03-18

Similar Documents

Publication Publication Date Title
KR970008982B1 (ko) 개선된 특성을 가진 화학 증기 증착-제조된 실리콘 탄화물
KR100760342B1 (ko) 저 저항성 실리콘 카바이드
US5178844A (en) Method and apparatus for producing nitride products
US5108729A (en) Production of carbide products
CA1294634C (fr) Melanges a base de diborure de titane et de carbure de bore, possedant unegrande durete et une grande resistance
EP0313980A1 (fr) Procédé et dispositif pour la préparation des poudres céramiques
KR101360775B1 (ko) 다공성 재료의 표면 및 내부 기공에 대규모로 와이어를 형성할 수 있는 방법 및 장치
US5176893A (en) Silicon nitride products and method for their production
US6939821B2 (en) Low resistivity silicon carbide
US3365316A (en) Method of epitaxially growing metal oxide single crystals
Berjonneau et al. Understanding the CVD process of (Si)–B–C ceramics through FTIR spectroscopy gas phase analysis
US8202621B2 (en) Opaque low resistivity silicon carbide
Yarbrough et al. Diamond deposition at low substrate temperatures
Rocheleau et al. MOCVD deposition of MgAl2O4 films using metal alkoxide precursors
US5348718A (en) Method and apparatus for producing carbride products
KR960006683B1 (ko) 디할로실란의 열분해로부터 반도전성 비결정질 실리콘 필름을 형성하는 방법
EP0494753A2 (fr) Silicium et carbure de silicium produits par dépôt chimique en phase vapeur ayant des propriétés optiques améliorées
Mark Single Crystal Silicon Overgrowths
US20240034635A1 (en) Method and Device for Producing a SiC Solid Material
EP4279452A1 (fr) Substrat de croissance de sic, réacteur cvd et procédé de production de sic
Kato Vapour phase synthesis of ultrafine non-oxide powders and their sintering behaviour
Sotirchos et al. Effects of residence time and reaction conditions on the deposition of silica, alumina, and aluminosilicates from CH3SiCl3, AlCl3, CO2, and H2 mixtures
US5219537A (en) Production of nitride products
JPH1059770A (ja) 炭化珪素多結晶体および耐食性部材

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20051011

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee