KR970008448A - 초음파 본딩방법 및 초음파 본딩장치 - Google Patents

초음파 본딩방법 및 초음파 본딩장치 Download PDF

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Publication number
KR970008448A
KR970008448A KR1019960029923A KR19960029923A KR970008448A KR 970008448 A KR970008448 A KR 970008448A KR 1019960029923 A KR1019960029923 A KR 1019960029923A KR 19960029923 A KR19960029923 A KR 19960029923A KR 970008448 A KR970008448 A KR 970008448A
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South Korea
Prior art keywords
bonding
vibration
ultrasonic
khz
vibration amplitude
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KR1019960029923A
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English (en)
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KR100456381B1 (ko
Inventor
료이치 가지와라
도시유키 다카하시
가즈야 다카하시
마사히로 고이즈미
히로시 와타나베
유키하루 아키야마
Original Assignee
가나이 츠토무
히다치세사쿠쇼 가부시키가이샤
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Publication of KR970008448A publication Critical patent/KR970008448A/ko
Application granted granted Critical
Publication of KR100456381B1 publication Critical patent/KR100456381B1/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
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    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20307—Ultrasonic frequency [f] 150 Khz=<f< 175 KHz
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    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20308—Ultrasonic frequency [f] 175 Khz=<f< 200 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
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    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns

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Abstract

반도체장치의 금속전극단자에 접속와이어를 초음파 본딩하는 초음파 본딩방법 및 초음파 본딩장치에 관한 것으로서, 반도체기판상에 마련된 금속전극단자에 접속와이어를 초음파 본딩시에 본딩툴선단의 진동진폭을 금속전극단자의 막두께 이하로 하고, 또한 그 진동주파수를 70KHz 이상으로 한다. 이러한 것에 의해 금속전극단자 하부에 있어서의 크랙 등의 물리적 손상을 방지할 수 있다.

Description

초음파 본딩방법 및 초음파 본딩장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 초음파 본딩방법이 실시되는 경우에 있어서의 초음파 본딩부분의 주요부구성을 도시한 단면도.

Claims (11)

  1. 기판상에 마련된 금속전극에 금속접속와이어를 본딩툴에 의해서 눌러붙이고, 본딩툴 선단의 진동진폭을 금속전극의 두께 이하로 하고, 또한 진동주파수를 70KHz 이상으로 해서 본딩툴을 초음파진동시키는 초음파 본딩방법.
  2. 제1항에 있어서, 본딩툴이 압전소자를 갖는 초음파진동자에 접속되l고, 본딩툴선단의 진동은 압전소자로의 입력전력E가 0.001(W)≤E≤1.0(W)의 범위에 있을 때 무부하시의 진동진폭A(㎛)가 A≤4E·e(16/3)승이고, 입력전력E가 1.0(㎛)≤E≤10.0(㎛)의 범위에 있을 때 무부하시의 진동진폭A(㎛)가 A≤4(㎛)인 초음파 본딩방법.
  3. 제2항에 있어서, 본딩툴의 진동진폭은 본딩을 실행할 때의 접합하중이 10N 이내일 때, 무부하시의 진동진폭A(㎛)의 1/2 이상인 초음파 본딩방법
  4. 제2항에 있어서, 초음파진동자가 발생하는 기계적진동은 무부하시의 진동진폭A(㎛)와 진동주파수f(KHz)사이에서 logA≥-0.31×logf2+1.414를 만족시키는 초음파 본딩방법.
  5. 제4항에 있어서, 진동주파수f(KHz)가 100KHz 이상인 초음파 본딩방법.
  6. 제1항에 있어서, 기판이 반도체기판이고, 금속전극이 알루미늄을 포함하는 초음파 본딩방법.
  7. 기판상에 마련된 금속전극에 금속전극와이어를 본딩툴에 의해서 눌러붙이고, 본딩툴 선단을 제1진동진폭 및 제1진동주파수로 초음파 진동시키고, 다음에 본딩툴 선단을 제1진동진폭보다 작고 또한 금속전극의 두께 이하의 제2진동진폭, 제1진동주파수보다 높고 또한 70KHz 이상의 진동주파수로 초음파 진동시키는 초음파 본딩방법.
  8. 본딩툴 및 본딩툴에 접속되는 초음파진동자를 구비하고, 초음파진동자가 압전소자이고, 본딩툴 선단의 진동은 압전소자로의 입력전력E가 0.001(W)≤E≤1.0(W)의 범위에 있을 때 무부하시의 진동진폭A(㎛)가 A≤4E·e(16/3)승이고, 입력전력E가 1.0(㎛)≤E≤10.0(㎛)의 범위에 있을 때 무부하시의 진동진폭A(㎛)가 A≤4(㎛)인 초음파 본딩장치.
  9. 제8항에 있어서, 본딩툴의 진동진폭은 본딩을 실행할 때의 접합하중이 10N 이내일 때, 무부하시의 진동진폭A(㎛)의 1/2 이상인 초음파 본딩장치.
  10. 제9항에 있어서, 초음파진동자가 발생하는 기계적진동은 무부하시의 진동진폭A(㎛)와 진동주파수f(KHz)사이에서 logA≥-0.31×logf2+1.414를 만족시키는 초음파 본딩장치.
  11. 제10항에 있어서, 진동주파수f(KHz)가 100KHz 이상인 초음파 본딩장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960029923A 1995-07-26 1996-07-24 초음파본딩방법및초음파본딩장치 KR100456381B1 (ko)

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