JP3466327B2 - 無方向性高周波数超音波ワイヤボンダ - Google Patents
無方向性高周波数超音波ワイヤボンダInfo
- Publication number
- JP3466327B2 JP3466327B2 JP12566395A JP12566395A JP3466327B2 JP 3466327 B2 JP3466327 B2 JP 3466327B2 JP 12566395 A JP12566395 A JP 12566395A JP 12566395 A JP12566395 A JP 12566395A JP 3466327 B2 JP3466327 B2 JP 3466327B2
- Authority
- JP
- Japan
- Prior art keywords
- ultrasonic
- wire bonder
- high frequency
- wire
- ultrasonic wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
続配線に応用される無方向性高周波数超音波ワイヤボン
ダに関する。
振周波数60KHz の超音波ワイヤボンダが公知である。
0.5 波長の長さの円錐状ホーン先端に設置した溶接チッ
プが、同円錐状ホーンの縦振動で駆動されて曲げ振動を
誘起し、同溶接チップ先端のワイヤと接合面に沿った方
向に超音波ワイヤボンディングを実施するものである。
術によっては、ワイヤの長さ方向に沿ったワイヤボンデ
ィングが不可欠なため、溶接チップ及び円錐ホーンの振
動方向とワイヤ長さ方向が同一方向となるように位置合
せする必要があった。このため、ワイヤボンディング時
間に機械的な位置合せ時間が加算されて長時間となり、
作業効率が低下するので、溶接チップの振動方向に影響
を受けない無方向性ワイヤボンダが切望されていた。
チップを用いた無方向性超音波ワイヤボンダを提供する
ことを目的とする。
を従来周波数(60KHz)のほぼ6 倍以上の高周波数で共振
する超音波ホーンを使用すると、ワイヤの長さ方向に影
響されないワイヤボンディングを実現可能なことを見出
してなされたものである。
は、ボルト締めランジュバン型超音波振動子と溶接チッ
プからなる超音波ワイヤボンダにおいて、超音波振動子
共振周波数を330KHz以上、601KHz以下の範
囲から選んだ値に設定したものである。
載の本発明において更に、ボルト締めランジュバン型超
音波振動子の背面体の直径及び長さをそれぞれ縦振動の
波長の0.5 以上の円柱構造とし、前面体の大端面直径及
び高さをそれぞれ縦振動の波長の0.5 以上の円錐構造と
したものである。
ュバン型超音波振動子に超音波発振器(図示せず)から
の電気信号を印加すると、同振動子は電気信号を音響振
動に変換して共振し、振動子の前面体を形成する超音波
ホーンは、縦方向の高周波数超音波振動でホーン先端の
溶接チップを励振する。これによって溶接チップは曲げ
振動を誘起し、同チップ先端のワイヤを高周波振動で加
振する。ワイヤは被溶接物と加圧状態の下に高周波数で
こすり合わされ、無方向性ボンディングが達成される。
する。本発明の原理を図2に示す。同図は直径0.1mm の
アルミニウムワイヤを板厚 1mmの銅板に加圧力300grfで
ワイヤボンディングした場合の超音波共振周波数と溶接
強度の関係図で、A1〜A5はワイヤ長さ方向と超音波
ホーンとの角度でそれぞれ 0°、30°、45°、60°、90
°である。図2の点A6は全ての角度で溶接強度が母材
強度の80%となる振動子共振周波数である。
Hz以上に選ぶと、全ての角度において溶接強度が母材強
度の80%以上となり無方向性ボンダが実現できる。
ュバン型超音波振動子の一実施例を図1に示す。同図は
共振周波数600KHzの高周波数超音波振動子の側面図と各
部の振動モードで、1は電歪素子、2及び3は電歪素子
1のそれぞれ背面体及び前面体で、1、2及び3は1軸
構造のボルト締めランジュバン型超音波振動子(締結ボ
ルトは図示せず)を構成している。図1で4は振動子支
持用フランジ、5は加圧機構8により加圧された溶接チ
ップ、6はボンディングワイヤ、7は被溶接物、9は溶
接用受け台、10及び11はそれぞれランジュバン型超
音波振動子の縦振動モード及び溶接チップの曲げ振動モ
ードを示す。
のそれぞれ0.65及び1.5 のアルミニウム製の円柱構造、
前面体3の大端面直径と高さを縦振動波長のそれぞれ0.
65及び1.5 のステンレス鋼製の円錐状超音波ホーン構造
とし、電歪素子を縦振動半波長厚さのPZTとする。
動をする直径 1mmのステンレス鋼製の棒で中央の振動ル
ープ部を超音波ホーンによって縦振動駆動する。この場
合の超音波振動子共振周波数は601KHzとなった。
全方向に亙って溶接強度が母材強度の80%以上となり、
ワイヤの長さ方向と超音波ホーンの方向を合致すること
を必要としない無方向性超音波ワイヤボンダが可能とな
る。
のワイヤボンダ(60KHz )に比較してチップ先端振動振
幅が1/30程度となるため、被溶接物に与える衝撃力が僅
少で、信頼性の高いボンディングが可能となる。
高効率、高信頼性の無方向性超音波ワイヤボンダを提供
することができる。
ボンダと各部の振動モードを示す模式図である。
Claims (2)
- 【請求項1】 ボルト締めランジュバン型超音波振動子
と溶接チップからなる超音波ワイヤボンダにおいて、 超音波振動子共振周波数を330KHz以上、601K
Hz以下の範囲から選んだ値に設定したことを特徴とす
る無方向性高周波数超音波ワイヤボンダ。 - 【請求項2】 ボルト締めランジュバン型超音波振動子
の背面体の直径及び長さをそれぞれ縦振動の波長の0.
5以上の円柱構造とし、前面体の大端面直径及び高さを
それぞれ縦振動の波長の0.5以上の円錐構造としたこ
とを特徴とする請求項1記載の無方向性高周波数超音波
ワイヤボンダ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12566395A JP3466327B2 (ja) | 1995-04-27 | 1995-04-27 | 無方向性高周波数超音波ワイヤボンダ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12566395A JP3466327B2 (ja) | 1995-04-27 | 1995-04-27 | 無方向性高周波数超音波ワイヤボンダ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08306746A JPH08306746A (ja) | 1996-11-22 |
JP3466327B2 true JP3466327B2 (ja) | 2003-11-10 |
Family
ID=14915585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12566395A Expired - Lifetime JP3466327B2 (ja) | 1995-04-27 | 1995-04-27 | 無方向性高周波数超音波ワイヤボンダ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3466327B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010008826A (ko) * | 1999-07-05 | 2001-02-05 | 이중구 | Xy진동 초음파 트랜스듀서를 갖는 와이어본더 |
JP3784391B2 (ja) * | 2004-02-24 | 2006-06-07 | 京セラ株式会社 | 超音波加工用振動子及び加工装置 |
-
1995
- 1995-04-27 JP JP12566395A patent/JP3466327B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH08306746A (ja) | 1996-11-22 |
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