KR970005694B1 - Semiconductor memory device - Google Patents
Semiconductor memory device Download PDFInfo
- Publication number
- KR970005694B1 KR970005694B1 KR93013407A KR930013407A KR970005694B1 KR 970005694 B1 KR970005694 B1 KR 970005694B1 KR 93013407 A KR93013407 A KR 93013407A KR 930013407 A KR930013407 A KR 930013407A KR 970005694 B1 KR970005694 B1 KR 970005694B1
- Authority
- KR
- South Korea
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19112092A JP3197064B2 (ja) | 1992-07-17 | 1992-07-17 | 半導体記憶装置 |
JP92-191120 | 1992-07-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940006268A KR940006268A (ko) | 1994-03-23 |
KR970005694B1 true KR970005694B1 (en) | 1997-04-18 |
Family
ID=16269203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93013407A KR970005694B1 (en) | 1992-07-17 | 1993-07-16 | Semiconductor memory device |
Country Status (4)
Country | Link |
---|---|
US (1) | US5414655A (ko) |
JP (1) | JP3197064B2 (ko) |
KR (1) | KR970005694B1 (ko) |
DE (1) | DE4323961A1 (ko) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4221432C2 (de) * | 1992-06-30 | 1994-06-09 | Siemens Ag | Globales Planarisierungsverfahren für integrierte Halbleiterschaltungen oder mikromechanische Bauteile |
US5714779A (en) * | 1992-06-30 | 1998-02-03 | Siemens Aktiengesellschaft | Semiconductor memory device having a transistor, a bit line, a word line and a stacked capacitor |
DE69329376T2 (de) * | 1992-12-30 | 2001-01-04 | Samsung Electronics Co Ltd | Verfahren zur Herstellung einer SOI-Transistor-DRAM |
US6744091B1 (en) | 1995-01-31 | 2004-06-01 | Fujitsu Limited | Semiconductor storage device with self-aligned opening and method for fabricating the same |
JP4190760B2 (ja) * | 1995-01-31 | 2008-12-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
JP2008263211A (ja) * | 1995-01-31 | 2008-10-30 | Fujitsu Ltd | 半導体装置 |
JP3127348B2 (ja) * | 1995-02-27 | 2001-01-22 | エルジイ・セミコン・カンパニイ・リミテッド | 凹凸の表面形状を有するタングステン膜を用いた半導体装置の製造方法 |
US5539230A (en) * | 1995-03-16 | 1996-07-23 | International Business Machines Corporation | Chimney capacitor |
US5920088A (en) | 1995-06-16 | 1999-07-06 | Interuniversitair Micro-Electronica Centrum (Imec Vzw) | Vertical MISFET devices |
US5963800A (en) * | 1995-06-16 | 1999-10-05 | Interuniversitair Micro-Elektronica Centrum (Imec Vzw) | CMOS integration process having vertical channel |
US5914504A (en) * | 1995-06-16 | 1999-06-22 | Imec Vzw | DRAM applications using vertical MISFET devices |
US6004839A (en) * | 1996-01-17 | 1999-12-21 | Nec Corporation | Semiconductor device with conductive plugs |
DE19618530A1 (de) * | 1996-05-08 | 1997-11-13 | Siemens Ag | Kondensator mit einer Carbid- oder Boridbarriereschicht |
US5866946A (en) * | 1996-05-23 | 1999-02-02 | Kabushiki Kaisha Toshiba | Semiconductor device having a plug for diffusing hydrogen into a semiconductor substrate |
JP2005244251A (ja) * | 1996-07-10 | 2005-09-08 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP3941133B2 (ja) * | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
JP3516558B2 (ja) * | 1996-08-26 | 2004-04-05 | シャープ株式会社 | 半導体装置の製造方法 |
JPH1070252A (ja) * | 1996-08-27 | 1998-03-10 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
TW377495B (en) * | 1996-10-04 | 1999-12-21 | Hitachi Ltd | Method of manufacturing semiconductor memory cells and the same apparatus |
KR100238218B1 (ko) * | 1996-11-29 | 2000-02-01 | 윤종용 | 반도체장치의 커패시터 제조방법 |
JP2923912B2 (ja) * | 1996-12-25 | 1999-07-26 | 日本電気株式会社 | 半導体装置 |
JPH10242419A (ja) | 1997-02-27 | 1998-09-11 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
TW399319B (en) * | 1997-03-19 | 2000-07-21 | Hitachi Ltd | Semiconductor device |
JPH11186524A (ja) | 1997-12-24 | 1999-07-09 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6384446B2 (en) * | 1998-02-17 | 2002-05-07 | Agere Systems Guardian Corp. | Grooved capacitor structure for integrated circuits |
TW410424B (en) * | 1998-09-30 | 2000-11-01 | Taiwan Semiconductor Mfg | Method for reducing the aspect ratio of the DRAM periphery contact |
US6072210A (en) | 1998-12-24 | 2000-06-06 | Lucent Technologies Inc. | Integrate DRAM cell having a DRAM capacitor and a transistor |
TW454330B (en) | 1999-05-26 | 2001-09-11 | Matsushita Electronics Corp | Semiconductor apparatus and its manufacturing method |
US6333225B1 (en) | 1999-08-20 | 2001-12-25 | Micron Technology, Inc. | Integrated circuitry and methods of forming circuitry |
US6958508B2 (en) * | 2000-10-17 | 2005-10-25 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric memory having ferroelectric capacitor insulative film |
JP4829678B2 (ja) * | 2000-10-17 | 2011-12-07 | パナソニック株式会社 | 強誘電体メモリ及びその製造方法 |
KR20020052455A (ko) * | 2000-12-26 | 2002-07-04 | 박종섭 | 반도체 소자의 제조방법 |
JP2003289134A (ja) * | 2002-03-28 | 2003-10-10 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR100469151B1 (ko) * | 2002-05-24 | 2005-02-02 | 주식회사 하이닉스반도체 | 반도체소자의 형성 방법 |
DE10228571A1 (de) * | 2002-06-26 | 2004-01-22 | Infineon Technologies Ag | Herstellungsverfahren für eine Halbleiterstruktur mit einer Mehrzahl von Gatestapeln auf einem Halbleitersubstrat und entsprechende Halbleiterstruktur |
KR100448719B1 (ko) * | 2002-10-18 | 2004-09-13 | 삼성전자주식회사 | 다마신공정을 이용한 반도체 장치 및 그의 제조방법 |
JP2006108152A (ja) * | 2004-09-30 | 2006-04-20 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
JP4557903B2 (ja) * | 2006-02-10 | 2010-10-06 | パナソニック株式会社 | 半導体装置及びその製造方法 |
DE102006016530A1 (de) * | 2006-04-07 | 2007-10-11 | Infineon Technologies Ag | Speicherkondensator und Verfahren zum Herstellen eines solchen Speicherkondensators |
US20100223433A1 (en) * | 2009-02-27 | 2010-09-02 | Tatu Ylonen Oy Ltd | Configurable object graph traversal with redirection for garbage collection |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0789569B2 (ja) * | 1986-03-26 | 1995-09-27 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
JPH01154551A (ja) * | 1987-12-11 | 1989-06-16 | Oki Electric Ind Co Ltd | 半導体メモリ集積回路装置及びその製造方法 |
JP2590171B2 (ja) * | 1988-01-08 | 1997-03-12 | 株式会社日立製作所 | 半導体記憶装置 |
JPH0828473B2 (ja) * | 1988-09-29 | 1996-03-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
EP0370407A1 (en) * | 1988-11-18 | 1990-05-30 | Nec Corporation | Semiconductor memory device of one transistor - one capacitor memory cell type |
FR2658951B1 (fr) * | 1990-02-23 | 1992-05-07 | Bonis Maurice | Procede de fabrication d'un circuit integre pour filiere analogique rapide utilisant des lignes d'interconnexions locales en siliciure. |
JPH0834304B2 (ja) * | 1990-09-20 | 1996-03-29 | 富士通株式会社 | 半導体装置およびその製造方法 |
-
1992
- 1992-07-17 JP JP19112092A patent/JP3197064B2/ja not_active Expired - Fee Related
-
1993
- 1993-07-16 DE DE4323961A patent/DE4323961A1/de not_active Ceased
- 1993-07-16 US US08/094,421 patent/US5414655A/en not_active Expired - Lifetime
- 1993-07-16 KR KR93013407A patent/KR970005694B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5414655A (en) | 1995-05-09 |
DE4323961A1 (de) | 1994-01-20 |
KR940006268A (ko) | 1994-03-23 |
JP3197064B2 (ja) | 2001-08-13 |
JPH0637280A (ja) | 1994-02-10 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20080813 Year of fee payment: 12 |
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LAPS | Lapse due to unpaid annual fee |