KR970004447B1 - 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법 - Google Patents

반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법 Download PDF

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Publication number
KR970004447B1
KR970004447B1 KR1019930018016A KR930018016A KR970004447B1 KR 970004447 B1 KR970004447 B1 KR 970004447B1 KR 1019930018016 A KR1019930018016 A KR 1019930018016A KR 930018016 A KR930018016 A KR 930018016A KR 970004447 B1 KR970004447 B1 KR 970004447B1
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KR
South Korea
Prior art keywords
film
resin
antireflection film
thickness
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930018016A
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English (en)
Korean (ko)
Other versions
KR950009969A (ko
Inventor
박춘근
여기성
박정철
Original Assignee
삼성전자 주식회사
김광호
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Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019930018016A priority Critical patent/KR970004447B1/ko
Priority to JP28172893A priority patent/JP3440122B2/ja
Priority to DE4414808A priority patent/DE4414808B4/de
Priority to TW083103940A priority patent/TW289766B/zh
Priority to FR9405849A priority patent/FR2709869B1/fr
Priority to CN94105508A priority patent/CN1053993C/zh
Priority to US08/304,197 priority patent/US5593725A/en
Publication of KR950009969A publication Critical patent/KR950009969A/ko
Application granted granted Critical
Publication of KR970004447B1 publication Critical patent/KR970004447B1/ko
Priority to US08/840,270 priority patent/US5759755A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
KR1019930018016A 1993-08-08 1993-09-08 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법 Expired - Lifetime KR970004447B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019930018016A KR970004447B1 (ko) 1993-09-08 1993-09-08 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법
JP28172893A JP3440122B2 (ja) 1993-09-08 1993-10-15 反射防止膜およびこれを使用した半導体装置の製造方法
DE4414808A DE4414808B4 (de) 1993-09-08 1994-04-28 Verwendung einer Antireflexbeschichtungszusammensetzung und Herstellungsverfahren für eine Antireflexschicht und ein Halbleiterbauelement
TW083103940A TW289766B (cg-RX-API-DMAC7.html) 1993-09-08 1994-04-30
FR9405849A FR2709869B1 (fr) 1993-09-08 1994-05-11 Couche antiréfléchissante et procédé pour fabriquer un dispositif semi-conducteur en utilisant une telle couche.
CN94105508A CN1053993C (zh) 1993-09-08 1994-05-13 抗反射层及其制造方法
US08/304,197 US5593725A (en) 1993-09-08 1994-09-12 Anti-reflective layer and method for manufacturing semiconductor device using the same
US08/840,270 US5759755A (en) 1993-08-08 1997-04-14 Semiconductor substrate containing anti-reflective layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930018016A KR970004447B1 (ko) 1993-09-08 1993-09-08 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR950009969A KR950009969A (ko) 1995-04-26
KR970004447B1 true KR970004447B1 (ko) 1997-03-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930018016A Expired - Lifetime KR970004447B1 (ko) 1993-08-08 1993-09-08 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법

Country Status (7)

Country Link
US (2) US5593725A (cg-RX-API-DMAC7.html)
JP (1) JP3440122B2 (cg-RX-API-DMAC7.html)
KR (1) KR970004447B1 (cg-RX-API-DMAC7.html)
CN (1) CN1053993C (cg-RX-API-DMAC7.html)
DE (1) DE4414808B4 (cg-RX-API-DMAC7.html)
FR (1) FR2709869B1 (cg-RX-API-DMAC7.html)
TW (1) TW289766B (cg-RX-API-DMAC7.html)

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KR100503061B1 (ko) * 2002-03-21 2005-07-25 삼성전자주식회사 유기 감광체용 오버코트 형성용 조성물 및 이로부터형성된 오버코트층을 채용한 유기 감광체
JP2003318126A (ja) * 2002-04-25 2003-11-07 Mitsubishi Electric Corp 半導体装置の製造方法
US7390608B2 (en) * 2002-10-21 2008-06-24 Rohm And Haas Electronic Materials Llc Photoresists containing Si-polymers
US6960419B2 (en) * 2003-12-12 2005-11-01 Kodak Polychrome Graphics Llc Antihalation dye for negative-working printing plates
US7390709B2 (en) * 2004-09-08 2008-06-24 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
KR100733920B1 (ko) * 2004-09-17 2007-07-02 주식회사 엘지화학 에칭 레지스트용 잉크 조성물, 이를 이용한 에칭 레지스트패턴 형성 방법 및 미세 유로 형성 방법
US7262138B1 (en) * 2004-10-01 2007-08-28 Advanced Micro Devices, Inc. Organic BARC with adjustable etch rate
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US7718529B2 (en) * 2007-07-17 2010-05-18 Globalfoundries Inc. Inverse self-aligned spacer lithography
KR100960463B1 (ko) 2007-08-09 2010-05-28 주식회사 하이닉스반도체 반사방지막용 중합체, 이를 포함하는 반사방지막 조성물 및이를 이용한 패턴 형성방법
KR100960464B1 (ko) 2007-08-09 2010-05-28 주식회사 하이닉스반도체 반사방지막용 중합체, 이를 포함하는 반사방지막 조성물 및이를 이용한 패턴 형성방법
WO2009119201A1 (ja) * 2008-03-28 2009-10-01 Jsr株式会社 レジスト下層膜及びレジスト下層膜形成用組成物並びにレジスト下層膜形成方法
KR101037842B1 (ko) * 2008-12-31 2011-05-31 덕양산업 주식회사 태양 전지 모듈을 구비한 차량의 인스트루먼트 패널
JP6375669B2 (ja) * 2014-04-03 2018-08-22 株式会社村田製作所 電子部品の製造方法
CN114686057B (zh) * 2020-12-28 2023-06-02 中国科学院微电子研究所 一种图形化用抗反射涂层组合物及图形化方法

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Also Published As

Publication number Publication date
CN1115496A (zh) 1996-01-24
FR2709869B1 (fr) 1996-02-02
JP3440122B2 (ja) 2003-08-25
DE4414808A1 (de) 1995-03-09
FR2709869A1 (fr) 1995-03-17
KR950009969A (ko) 1995-04-26
US5759755A (en) 1998-06-02
US5593725A (en) 1997-01-14
TW289766B (cg-RX-API-DMAC7.html) 1996-11-01
CN1053993C (zh) 2000-06-28
DE4414808B4 (de) 2006-09-07
JPH0792684A (ja) 1995-04-07

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