KR970003875A - 와이어본드 없는 모듈 패키지와 그 제조방법 - Google Patents

와이어본드 없는 모듈 패키지와 그 제조방법 Download PDF

Info

Publication number
KR970003875A
KR970003875A KR1019960018381A KR19960018381A KR970003875A KR 970003875 A KR970003875 A KR 970003875A KR 1019960018381 A KR1019960018381 A KR 1019960018381A KR 19960018381 A KR19960018381 A KR 19960018381A KR 970003875 A KR970003875 A KR 970003875A
Authority
KR
South Korea
Prior art keywords
conductive material
regions
semiconductor die
cavity
portions
Prior art date
Application number
KR1019960018381A
Other languages
English (en)
Other versions
KR100418318B1 (ko
Inventor
엘. 로메로 길레르모
제이. 앤더슨 사무엘
Original Assignee
빈센트 비. 인그라시아
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 비. 인그라시아, 모토로라 인코포레이티드 filed Critical 빈센트 비. 인그라시아
Publication of KR970003875A publication Critical patent/KR970003875A/ko
Application granted granted Critical
Publication of KR100418318B1 publication Critical patent/KR100418318B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861Lead-frames fixed on or encapsulated in insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

본 발명은 다수의 포켓을 한정하는 AIN 기판을 내부에 갖는 캐비티를 가진 다공성 Sic의 성형된 프리폼을 포함하는 와이어본드 없는 모듈 패키지와 그 제조방법을 제공한다. 프리폼에는 Al이 침투되고, Al은 각각의 포켓내에 증착된다. 반도체 다이는 한 포켓내의 Al상에 장착된다. 유전체 층은 Al을 덮고, 알루미늄과 다이에의 접속부를 노출시키기 위해 위치되고 유전체 층을 관통하는 구멍을 한정한다. 전도성 재료는 단자와 다이와 단자 사이에 상호접속부를 한정하기 위해 다이 Al과 접촉되는 유전체 층상에 위치된다.

Description

와이어본드 없는 모듈 패키지와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제9도는 본 발명에 따른 와이어본드 없는 모듈 패키지의 제조 공정에 있어서 여러가지 단계를 설명하는 사시도.

Claims (5)

  1. 와이어본드 없는 모듈 패키지의 제조방법에 있어서, 내부에 한정된 캐비티를 가진 프리폼을 제공하는 단계와, 상기 캐비티를 다수의 개별 영역으로 분할하는 유전체 격벽을 캐비티내에 제공하는 단계와, 상기 유전체 격벽은 제1전도성 재료의 각각의 부분을 제1전도성 재료의 모든 다른 부분으로부터 전기적으로 절연시키는데, 상기 제1전도성 재료의 다수의 부분중의 각각의 부분을 다수의 영역의 각각에 위치시키는 단계와, 상기 다수의 영역중의 한 영역내의 상기 제1전도성 재료의 제1부분상에 반도체 다이를 장착시키는 단계와, 상기 전도성 재료의 다수의 부분상에 외부 단자를 형성하는 단계와, 상기 다이로부터 외부 단자에의 전기 접속부를 한정하는 금속층을 증착하는 단계를 포함하는 것을 특징으로 하는 와이어본드 없는 모듈 패키지의 제조방법.
  2. 와이어본드 없는 모듈 패키지의 제조방법에 있어서, 내부에 한정된 캐비티를 가진 프리폼을 제공하는 단계와, 상기 캐비티를 다수의 개별 영역으로 분할하는 유전체 격벽을 캐비티내에 제공하는 단계와, 상기 유전체 격벽은 제1전도성 재료의 각각의 부분을 제1전도성 재료의 모든 다른 부분으로부터 전기적으로 절연시키는데, 상기 제1전도성 재료의 다수의 부분중의 각각의 부분을 다수의 영역의 각각에 위치시키는 단계와, 상기 다수의 영역중의 한 영역내의 상기 제1전도성 재료의 제1부분상에 반도체 다이를 장착시키는 단계와, 유전체층은 그 층을 관통하여 한정되고 상기 제1전도성 재료의 부분의 표면을 노출시키며 상기 반도체 다이에의 접속부를 노출시키기 위해서 위치된 구멍을 갖는데, 상기 유전체 층을 상기 다수의 영역의 각각의 영역내의 상기 제1전도성 재료의 다수의 부분 위에 위치시키는 단계와, 외부 단자와 상기 반도체 다이와 외부 단자 사이에 상호 접속부를 한정하기 위해서, 상기 반도체 다이와 상기 제1전도성 재료의 부분의 노출된 표면에의 접속부에 접촉하도록 상기 유전체 층상에 제2전도성 재료의 부분을 위치시키는 단계를 포함하는 것을 특징으로 하는 와이어본드 없는 모듈 패키지의 제조 방법.
  3. 와이어본드 없는 모듈 패키지의 제조방법에 있어서, 내부에 한정된 캐비티를 가진 실리콘 탄화물의 성형된 프리폼을 제공하는 단계와, 내부에 한정된 다수의 포켓을 가진 세라믹 기판을 제공하고, 상기 캐비티를 다수의 개별 영역으로 분할하기 위해서 외향 개방되는 포켓을 가진 기판을 캐비티 내에 위치시키는 단계와, 상기 기판의 포켓은 각각의 개별 영역내의 알루미늄을 침투시키고, 다수의 개별 영역의 각각의 영역내에 알루미늄을 증착시키는 단계와, 상기 다수의 영역중의 한 영역내에 알루미늄상에 반도체 다이를 장착시키는 단계와, 유전체 층은 그 층을 관통하여 한정되고 상기 알루미늄의 표면을 노출시키고 상기 반도체 다이의 접속부를 노출시키기 위해서 위치된 구멍을 갖는데, 상기 유전체 층을 상기 다수의 영역의 각각의 영역내의 알루미늄 위에 위치시키는 단계와, 외부 단자와 상기 반도체 다이와 외부 단자 사이에 상호접속부를 한정하기 위해서, 상기 반도체 다이와 상기 알루미늄의 노출된 표면에의 접속부에 접촉하도록 상기 유전체 층상에 전도성 재료의 부분을 위치시키는 단계를 포함하는 것을 특징으로 하는 와이어본드 없는 모듈패키지의 제조방법.
  4. 와이어본드 없는 모듈 패키지에 있어서, 내부에 한정된 캐비티를 가진 프리폼과, 상기 캐비티를 다수의 개별 영역으로 분할하며 캐비티내의 위치된 유전체 격벽과, 상기 유전체 격벽은 제1전도성 재료의 각각의 부분을 제1전도성 재료의 모든 다른 부분으로부터 전기적으로 절연시키는데, 상기 다수의 개별 영역의 각각의 영역에 각각 위치된 상기 제1전도성 재료의 다수의 부분과, 상기 다수의 영역중의 한 영역내의 상기 제1전도성 재료의 제1부분상에 장착된 반도체 다이와, 상기 제1전도성 재료의 다수의 부분상에 한정된 외부 단자와, 상기 반도체 다이와 외부단자 사이에 연장되어 상호접속부를 제공하는 금속 증착부를 포함하는 것을 특징으로 하는 와이어본드 없는 모듈 패키지.
  5. 와이어본드 없는 모듈 패키지에 있어서, 내부에 한정된 캐비티를 가진 프리폼과, 상기 캐비티를 다수의 개별 영역으로 분할하며, 캐비티내에 위치된 유전체 격벽과, 상기 유전체 격벽은 제1전도성 재료의 각각의 부분을 제1전도성 재료의 모든 다른 부분으로부터 전기적으로 절연시키는데, 상기 다수의 개별 영역의 각각의 영역에 각각 위치된 상기 제1전도성 재료의 다수의 부분과, 상기 다수의 영역중의 한 영역내의 상기 제1전도성 재료의 제1부분상에 장착된 반도체 다이와, 유전체 층은 그 층을 관통하여 한정되고 상기 제1전도성 재료의 부분의 표면을 노출시키며 상기 반도체 다이에의 접속부를 노출시키기 위해서 위치된 구멍을 갖는데, 상기 다수의 영역의 각각의 영역내의 상기 제1전도성 재료의 다수의 부분 위에 위치된 상기 유전체 층과, 외부 단자와 상기 반도체 다이와 외부 단자 사이에 상호 접속부를 한정하며, 상기 반도체 다이와 상기 제1전도성 재료의 부분의 노출된 표면에의 접속부에 접촉하도록 상기 유전체 층상에 위치된 제2전도성 재료의 부분을 포함하는 것을 특징으로 하는 와이어본드 없는 모듈 패키지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960018381A 1995-06-05 1996-05-29 와이어본드없는모듈패키지와그제조방법 KR100418318B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US464,112 1995-06-05
US08/464,112 US5616886A (en) 1995-06-05 1995-06-05 Wirebondless module package

Publications (2)

Publication Number Publication Date
KR970003875A true KR970003875A (ko) 1997-01-29
KR100418318B1 KR100418318B1 (ko) 2004-04-28

Family

ID=23842615

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960018381A KR100418318B1 (ko) 1995-06-05 1996-05-29 와이어본드없는모듈패키지와그제조방법

Country Status (4)

Country Link
US (1) US5616886A (ko)
EP (1) EP0747949A3 (ko)
JP (1) JP4094075B2 (ko)
KR (1) KR100418318B1 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898128A (en) * 1996-09-11 1999-04-27 Motorola, Inc. Electronic component
JPH10150656A (ja) * 1996-09-20 1998-06-02 Hitachi Ltd 画像処理装置及び侵入者監視装置
US5774342A (en) * 1996-09-26 1998-06-30 Delco Electronics Corporation Electronic circuit with integrated terminal pins
US6245442B1 (en) * 1997-05-28 2001-06-12 Kabushiki Kaisha Toyota Chuo Metal matrix composite casting and manufacturing method thereof
AT408153B (de) * 1998-09-02 2001-09-25 Electrovac Metall-matrix-composite- (mmc-) bauteil
US6173632B1 (en) * 1998-11-23 2001-01-16 Semiconductor Technologies & Instruments, Inc. Single station cutting apparatus for separating semiconductor packages
US6261868B1 (en) 1999-04-02 2001-07-17 Motorola, Inc. Semiconductor component and method for manufacturing the semiconductor component
GB2373636B (en) * 2000-11-29 2004-09-08 Mitsubishi Chem Corp Semiconductor light emitting device with two heat sinks in contact with each other
AU2002340750A1 (en) 2001-09-28 2003-04-14 Siemens Aktiengesellschaft Method for contacting electrical contact surfaces of a substrate and device consisting of a substrate having electrical contact surfaces
JP2004014746A (ja) * 2002-06-06 2004-01-15 Denki Kagaku Kogyo Kk モジュール構造体とその製造方法
CN100468670C (zh) * 2003-02-28 2009-03-11 西门子公司 带有大面积接线的功率半导体器件的连接技术
US7208347B2 (en) * 2003-02-28 2007-04-24 Siemens Aktiengesellschaft Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours
DE10314172B4 (de) * 2003-03-28 2006-11-30 Infineon Technologies Ag Verfahren zum Betreiben einer Anordnung aus einem elektrischen Bauelement auf einem Substrat und Verfahren zum Herstellen der Anordnung
US7402845B2 (en) * 2005-12-30 2008-07-22 International Rectifier Corporation Cascoded rectifier package
US8198712B2 (en) * 2006-06-07 2012-06-12 International Rectifier Corporation Hermetically sealed semiconductor device module
JP5597727B2 (ja) * 2011-01-20 2014-10-01 京セラ株式会社 半導体素子収納用パッケージ、およびこれを備えた半導体装置
JP5738226B2 (ja) * 2012-03-22 2015-06-17 三菱電機株式会社 電力用半導体装置モジュール
US9431311B1 (en) 2015-02-19 2016-08-30 Semiconductor Components Industries, Llc Semiconductor package with elastic coupler and related methods

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626259A (en) * 1970-07-15 1971-12-07 Trw Inc High-frequency semiconductor package
US3777221A (en) * 1972-12-18 1973-12-04 Ibm Multi-layer circuit package
US3846734A (en) * 1973-02-06 1974-11-05 Amp Inc Frames for adapting a multi-contact electrical connector to electrically connect with various styles of substrates
JPS5936827B2 (ja) * 1979-01-12 1984-09-06 日本電信電話株式会社 集積回路素子の冷却装置
US4455448A (en) * 1981-12-02 1984-06-19 Watkins-Johnson Company Housing for microwave electronic devices
US4627533A (en) * 1984-10-29 1986-12-09 Hughes Aircraft Company Ceramic package for compensated crystal oscillator
JPS62162891U (ko) * 1986-04-03 1987-10-16
US4837664A (en) * 1988-09-12 1989-06-06 Westinghouse Electric Corp. Building block composite design and method of making for RF line replaceable modules
US4960613A (en) * 1988-10-04 1990-10-02 General Electric Company Laser interconnect process
US4988412A (en) * 1988-12-27 1991-01-29 General Electric Company Selective electrolytic desposition on conductive and non-conductive substrates
US5019535A (en) * 1989-03-28 1991-05-28 General Electric Company Die attachment method using nonconductive adhesive for use in high density interconnected assemblies
US5231304A (en) * 1989-07-27 1993-07-27 Grumman Aerospace Corporation Framed chip hybrid stacked layer assembly
US5146314A (en) * 1990-03-09 1992-09-08 The University Of Colorado Foundation, Inc. Apparatus for semiconductor circuit chip cooling using a diamond layer
US5206712A (en) * 1990-04-05 1993-04-27 General Electric Company Building block approach to microwave modules
US5111277A (en) * 1991-03-29 1992-05-05 Aegis, Inc. Surface mount device with high thermal conductivity
US5151769A (en) * 1991-04-04 1992-09-29 General Electric Company Optically patterned RF shield for an integrated circuit chip for analog and/or digital operation at microwave frequencies
US5216806A (en) * 1992-09-01 1993-06-08 Atmel Corporation Method of forming a chip package and package interconnects
USH1245H (en) * 1992-11-05 1993-10-05 The United States Of America As Represented By The Secretary Of The Army High-G support frame assembly
JPH06164265A (ja) * 1992-11-16 1994-06-10 Toshiba Corp マイクロ波増幅器
US5461196A (en) * 1992-12-02 1995-10-24 Hughes Aircraft Company Low temperature co-fired ceramic (LTCC) high density interconnect package with circuitry within the cavity walls
JP2823461B2 (ja) * 1992-12-11 1998-11-11 三菱電機株式会社 高周波帯ic用パッケージ
US5384691A (en) * 1993-01-08 1995-01-24 General Electric Company High density interconnect multi-chip modules including embedded distributed power supply elements
US5465481A (en) * 1993-10-04 1995-11-14 Motorola, Inc. Method for fabricating a semiconductor package

Also Published As

Publication number Publication date
JP4094075B2 (ja) 2008-06-04
EP0747949A3 (en) 1998-04-29
US5616886A (en) 1997-04-01
KR100418318B1 (ko) 2004-04-28
EP0747949A2 (en) 1996-12-11
JPH08335665A (ja) 1996-12-17

Similar Documents

Publication Publication Date Title
KR970003875A (ko) 와이어본드 없는 모듈 패키지와 그 제조방법
KR830002552B1 (ko) 이중 공동반도체 칩캐리어
EP0015111B1 (en) Lead frame and housing for integrated circuit
KR100675494B1 (ko) 반도체 장치 및 반도체 장치를 제조하고 패키징하기 위한 공정
KR100259359B1 (ko) 반도체 패키지용 기판 및 반도체 패키지, 그리고 그 제조방법
US4956749A (en) Interconnect structure for integrated circuits
US3271507A (en) Flat package for semiconductors
US5780926A (en) Multichip package device having a lead frame with stacked patterned metallization layers and insulation layers
KR970058407A (ko) 표면 실장형 반도체 패키지와 그 제조방법
JPH08500211A (ja) 集積回路チップの一体化積重ね体用の非導電性端部層
KR920001701A (ko) 반도체 장치 및 그 제조방법
US3404214A (en) Flat package for semiconductors
KR960706194A (ko) 계층화된 도전 평면을 갖는 리드 프레임(a lead frame having layered conductive planes)
US3597839A (en) Circuit interconnection method for microelectronic circuitry
KR970077584A (ko) 반도체장치와 그 제조방법
JP2000516044A (ja) マイクロ波ハイブリッド集積回路
US4924296A (en) Multiple-chip semiconductor element in a case of metal and resin
US5898128A (en) Electronic component
JPS5821847A (ja) 電子部品取付用構成体の製造方法
KR900001984B1 (ko) 수지봉합형 반도체장치
KR920018849A (ko) 반도체장치 및 그의 제조방법
US3971062A (en) Semiconductor arrangement
JP2691799B2 (ja) リードフレームに接合された介在ダイ取付基板を有する集積回路パッケージ設計
US4297722A (en) Ceramic package for semiconductor devices having metalized lead patterns formed like a floating island
JPS6281739A (ja) Icパツケ−ジ

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130110

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20140109

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee