KR970003442A - 기상성장장치 - Google Patents

기상성장장치 Download PDF

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Publication number
KR970003442A
KR970003442A KR1019960020731A KR19960020731A KR970003442A KR 970003442 A KR970003442 A KR 970003442A KR 1019960020731 A KR1019960020731 A KR 1019960020731A KR 19960020731 A KR19960020731 A KR 19960020731A KR 970003442 A KR970003442 A KR 970003442A
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KR
South Korea
Prior art keywords
growth apparatus
heater
wafer
phase growth
vapor phase
Prior art date
Application number
KR1019960020731A
Other languages
English (en)
Other versions
KR100251877B1 (ko
Inventor
마사히코 이치시마
에이이치 도야
다다시 오하시
마사키 시마다
신이치 미타니
다카아키 혼다
Original Assignee
후지이 아키히로
도시바 세라믹스 가부시키가이샤
오카노 사다오
도시바 기카이 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지이 아키히로, 도시바 세라믹스 가부시키가이샤, 오카노 사다오, 도시바 기카이 가부시키가이샤 filed Critical 후지이 아키히로
Publication of KR970003442A publication Critical patent/KR970003442A/ko
Application granted granted Critical
Publication of KR100251877B1 publication Critical patent/KR100251877B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

반응실의 내부에 웨이퍼를 웨이퍼 유지판으로 지지하고, 상기 웨이퍼 유지판으로 지지된 웨이퍼의 아래쪽에 히터를 설치하고, 웨이퍼의 표면에 기상성장시키는 기상성장장치에 있어서, 상기 히터의 적어도 하향열을 반사하는 반사판을 설치하고, 상기 히터의 측방 바깥둘레를 둘러싸도록 보온통을 설치하고, 상기 반사판을 유리상태의 카본으로 형성한 기상성장장치.

Description

기상성장장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예를 도시하는 개략 단면도이다.

Claims (5)

  1. 반응실의 내부에서 웨이퍼를 웨이퍼 유지체로 지지하고, 상기 웨이퍼 유지체로 지지된 웨이퍼의 아래쪽에히터를 설치하고, 가열상태로 웨이퍼의 표면에 기상성장시키는 기상성장장치에 있어서, 상기 히터로부터의 적어도 하향열을 반사하기 위한 반사판을 설치하고, 상기 반사판을 유리상태의
    -Carbon으로 형성하는 것을 특징으로 하는 기상성장장치.
  2. 제1항에 있어서, 상기 반사판의 표면중, 적어도 상기 히터를 향한쪽의 표면이 Ra 0.001 내지 0.05㎛의 표면거칠기를 가지는 것을 특징으로 하는 기상성장장치.
  3. 제1항에 있어서, 상기 히터가 1000℃ 이상의 고온으로 급속 가열가능한 것인 기상성장장치.
  4. 제1항에 있어서, 유리상태의 카본은 벌크밀도가 1.50 내지 1.60g/cm3이며, 구부림강도가 100MPa 이상인 기상성장장치.
  5. 제1항에 있어서, 반사판이, 원판형상의 바닥부와 원통형상의 측부로 이루어지며, 이들에 의하여 형성된 원통공간에 상기 히터가 배치되는 기상성장장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960020731A 1995-06-15 1996-06-11 기상성장장치 KR100251877B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-171609 1995-06-15
JP17160995 1995-06-15

Publications (2)

Publication Number Publication Date
KR970003442A true KR970003442A (ko) 1997-01-28
KR100251877B1 KR100251877B1 (ko) 2000-05-01

Family

ID=15926349

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960020731A KR100251877B1 (ko) 1995-06-15 1996-06-11 기상성장장치

Country Status (4)

Country Link
US (1) US5868850A (ko)
KR (1) KR100251877B1 (ko)
DE (1) DE19622322C2 (ko)
TW (1) TW303485B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100352765B1 (ko) * 1999-12-01 2002-09-16 삼성전자 주식회사 반도체 제조용 가열장치

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0873575B1 (de) * 1996-11-01 2003-02-26 Theva Dünnschichttechnik GmbH Vorrichtung zur herstellung oxidischer dünnschichten
US6416318B1 (en) 1999-06-16 2002-07-09 Silicon Valley Group, Inc. Process chamber assembly with reflective hot plate and pivoting lid
KR100375985B1 (ko) * 2000-08-17 2003-03-15 삼성전자주식회사 반사부를 구비하는 박막 형성 장치
US6740403B2 (en) 2001-04-02 2004-05-25 Toyo Tanso Co., Ltd. Graphitic polyhederal crystals in the form of nanotubes, whiskers and nanorods, methods for their production and uses thereof
JP3798721B2 (ja) * 2002-03-29 2006-07-19 東芝セラミックス株式会社 半導体熱処理用反射板およびこの半導体熱処理用反射板の製造方法
US20040033361A1 (en) * 2002-08-06 2004-02-19 Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) Component of glass-like carbon for CVD apparatus and process for production thereof
JP3887291B2 (ja) * 2002-09-24 2007-02-28 東京エレクトロン株式会社 基板処理装置
JP5283370B2 (ja) * 2007-11-29 2013-09-04 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP5197030B2 (ja) * 2008-01-16 2013-05-15 株式会社東芝 エピタキシャルウェーハの製造装置及び製造方法
US20120244684A1 (en) * 2011-03-24 2012-09-27 Kunihiko Suzuki Film-forming apparatus and method
CN112176312A (zh) * 2019-07-02 2021-01-05 中国科学院苏州纳米技术与纳米仿生研究所 一种简单制备玻璃碳膜的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2543837B2 (de) * 1975-10-01 1979-02-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und Vorrichtung zum Herstellen eines EinkristaUes
SU608376A1 (ru) * 1976-04-12 1979-02-05 Государственный Ордена Октябрьской Революции Научно-Исследовательский И Проектный Институт Редкометаллической Промышленности "Гиредмет" Устройство дл эпитаксиального наращивани полупроводниковых материалов
JPH0687463B2 (ja) * 1989-08-24 1994-11-02 株式会社東芝 半導体気相成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100352765B1 (ko) * 1999-12-01 2002-09-16 삼성전자 주식회사 반도체 제조용 가열장치

Also Published As

Publication number Publication date
KR100251877B1 (ko) 2000-05-01
US5868850A (en) 1999-02-09
DE19622322C2 (de) 1999-02-25
TW303485B (ko) 1997-04-21
DE19622322A1 (de) 1996-12-19

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