KR970000870B1 - 반도체메모리장치 - Google Patents

반도체메모리장치 Download PDF

Info

Publication number
KR970000870B1
KR970000870B1 KR1019930025618A KR930025618A KR970000870B1 KR 970000870 B1 KR970000870 B1 KR 970000870B1 KR 1019930025618 A KR1019930025618 A KR 1019930025618A KR 930025618 A KR930025618 A KR 930025618A KR 970000870 B1 KR970000870 B1 KR 970000870B1
Authority
KR
South Korea
Prior art keywords
logic voltage
memory cell
mos transistor
plate electrode
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930025618A
Other languages
English (en)
Korean (ko)
Other versions
KR940016262A (ko
Inventor
히로시게 히라노
타쯔미 스미
노브유키 모리와키
죠지 나카네
Original Assignee
마쯔시다덴기산교 가부시기가이샤
오리시타 요이찌
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마쯔시다덴기산교 가부시기가이샤, 오리시타 요이찌 filed Critical 마쯔시다덴기산교 가부시기가이샤
Publication of KR940016262A publication Critical patent/KR940016262A/ko
Application granted granted Critical
Publication of KR970000870B1 publication Critical patent/KR970000870B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019930025618A 1992-12-02 1993-11-29 반도체메모리장치 Expired - Fee Related KR970000870B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32298392 1992-12-02
JP92-322983 1992-12-02

Publications (2)

Publication Number Publication Date
KR940016262A KR940016262A (ko) 1994-07-22
KR970000870B1 true KR970000870B1 (ko) 1997-01-20

Family

ID=18149835

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930025618A Expired - Fee Related KR970000870B1 (ko) 1992-12-02 1993-11-29 반도체메모리장치

Country Status (6)

Country Link
US (2) US5392234A (https=)
EP (1) EP0600434B1 (https=)
KR (1) KR970000870B1 (https=)
CN (1) CN1040706C (https=)
DE (1) DE69322747T2 (https=)
TW (1) TW323367B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111085A (ja) * 1993-10-14 1995-04-25 Sharp Corp 不揮発性半導体記憶装置
EP0663666B1 (de) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb
JP3218844B2 (ja) * 1994-03-22 2001-10-15 松下電器産業株式会社 半導体メモリ装置
TW378323B (en) * 1994-09-22 2000-01-01 Matsushita Electric Industrial Co Ltd Ferroelectric memory device
JPH08115265A (ja) * 1994-10-15 1996-05-07 Toshiba Corp 半導体記憶装置及びその製造方法
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
JP3127751B2 (ja) * 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
JPH08203266A (ja) * 1995-01-27 1996-08-09 Nec Corp 強誘電体メモリ装置
US5530668A (en) * 1995-04-12 1996-06-25 Ramtron International Corporation Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage
US5619447A (en) * 1995-05-02 1997-04-08 Motorola, Inc. Ferro-electric memory array architecture and method for forming the same
US5675530A (en) * 1995-08-02 1997-10-07 Matsushita Electric Industrial Co., Ltd. Ferroelectric memory device
SG79200A1 (en) * 1995-08-21 2001-03-20 Matsushita Electric Industrial Co Ltd Ferroelectric memory devices and method for testing them
JPH09120685A (ja) * 1995-10-24 1997-05-06 Sony Corp 強誘電体記憶装置
US5737260A (en) * 1996-03-27 1998-04-07 Sharp Kabushiki Kaisha Dual mode ferroelectric memory reference scheme
US6118688A (en) * 1997-06-05 2000-09-12 Matsushita Electronics Corporation Ferroelectric memory device and method for driving it
KR100363102B1 (ko) * 1998-07-15 2003-02-19 주식회사 하이닉스반도체 강유전체 메모리
KR100389130B1 (ko) * 2001-04-25 2003-06-25 삼성전자주식회사 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자
US6649453B1 (en) * 2002-08-29 2003-11-18 Micron Technology, Inc. Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
US6906945B2 (en) * 2003-11-18 2005-06-14 Texas Instruments Incorporated Bitline precharge timing scheme to improve signal margin
CN107331416B (zh) * 2012-02-16 2020-11-10 芝诺半导体有限公司 包括初级和二级电晶体的存储单元
EP3507805B1 (en) * 2016-08-31 2025-10-01 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
SG11201901210UA (en) 2016-08-31 2019-03-28 Micron Technology Inc Ferroelectric memory cells
KR102314663B1 (ko) 2016-08-31 2021-10-21 마이크론 테크놀로지, 인크. 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법
CN109643571A (zh) 2016-08-31 2019-04-16 美光科技公司 包含铁电存储器及用于存取铁电存储器的设备及方法
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
JPH088339B2 (ja) * 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
US5297077A (en) * 1990-03-30 1994-03-22 Kabushiki Kaisha Toshiba Memory having ferroelectric capacitors polarized in nonvolatile mode
US5400275A (en) * 1990-06-08 1995-03-21 Kabushiki Kaisha Toshiba Semiconductor memory device using ferroelectric capacitor and having only one sense amplifier selected
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation

Also Published As

Publication number Publication date
CN1040706C (zh) 1998-11-11
DE69322747T2 (de) 1999-06-24
US5392234A (en) 1995-02-21
TW323367B (https=) 1997-12-21
KR940016262A (ko) 1994-07-22
EP0600434A3 (en) 1996-06-05
DE69322747D1 (de) 1999-02-04
US5467302A (en) 1995-11-14
CN1091544A (zh) 1994-08-31
EP0600434A2 (en) 1994-06-08
EP0600434B1 (en) 1998-12-23

Similar Documents

Publication Publication Date Title
KR970000870B1 (ko) 반도체메모리장치
KR100290436B1 (ko) 강유전체메모리
JP3856424B2 (ja) 半導体記憶装置
KR100351594B1 (ko) 강유전체 메모리 및 반도체 메모리
US6285575B1 (en) Shadow RAM cell and non-volatile memory device employing ferroelectric capacitor and control method therefor
US5844832A (en) Cell array structure for a ferroelectric semiconductor memory and a method for sensing data from the same
US5430671A (en) Semiconductor memory device
US6987687B2 (en) Semiconductor memory and its driving method
US7233536B2 (en) Semiconductor memory device having memory cells to store cell data and reference data
JP2002093154A (ja) 強誘電体メモリ
US4982367A (en) Dynamic random access memory with well-balanced read-out voltage on bit line pair and operating method therefor
JP3688232B2 (ja) 強誘電体記憶装置
KR20040010243A (ko) 강유전체 기억장치 및 그 판독방법
US7142444B2 (en) Data reading method, data writing method, and semiconductor memory device
US6898108B2 (en) Semiconductor storage device and method for driving the same
JP3604576B2 (ja) 強誘電体メモリ装置
US6046928A (en) Non-volatile semiconductor memory device
JP3189540B2 (ja) 半導体メモリ装置
US6834006B2 (en) Method and circuit for reading data from a ferroelectric memory cell
JP3868660B2 (ja) 半導体記憶装置及びその駆動方法
KR100373352B1 (ko) 셀 저장노드의 전압다운 보상을 위한 저항을 갖는 강유전체 메모리 장치의 메모리 셀
KR100318423B1 (ko) 강유전체 메모리 장치
KR19990021587A (ko) 강유전체 메모리 소자 및 그 구동 방법
JP2001118384A (ja) 強誘電体メモリ
KR20010003223A (ko) 강유전체 랜덤 억세스 메모리 장치 및 그의 기입 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20100111

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20110121

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20110121

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301