KR960043075A - 더미 웨이퍼 - Google Patents

더미 웨이퍼 Download PDF

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Publication number
KR960043075A
KR960043075A KR1019960016950A KR19960016950A KR960043075A KR 960043075 A KR960043075 A KR 960043075A KR 1019960016950 A KR1019960016950 A KR 1019960016950A KR 19960016950 A KR19960016950 A KR 19960016950A KR 960043075 A KR960043075 A KR 960043075A
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KR
South Korea
Prior art keywords
dummy wafer
manufacturing process
mirror
thickness
less
Prior art date
Application number
KR1019960016950A
Other languages
English (en)
Other versions
KR100216389B1 (ko
Inventor
다츠히로 야사카
다카시 니시자와
가즈오 무라마츠
츠토무 와타나베
Original Assignee
가메다카 소키치
가부시키가이샤 고베 세이코쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가메다카 소키치, 가부시키가이샤 고베 세이코쇼 filed Critical 가메다카 소키치
Publication of KR960043075A publication Critical patent/KR960043075A/ko
Application granted granted Critical
Publication of KR100216389B1 publication Critical patent/KR100216389B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

본 발명은 반도체 디바이스 제조공정에서 사용되는 테스트 더미웨이퍼를 제공하며, 그것은 실리콘 웨이퍼보다 더 양호한 엣칭저항과 기판에 요구되는 양호한 경면특성 및 편평도를 가지며 제조공정에서 아무런 오염을 일으키지 않는다. 더미 웨이퍼는 유리상 카본으로 구성되며 적어도 한면은 바람직하게 0.005㎛ 이하인 표면거칠기(Ra)를 갖도록 경면연마된다.
본 발명의 더미 웨이퍼는 CVD막의 두께를 모니터링하기 위하여 더미 웨이퍼로서의 매우 양호한 특성을 갖는다. 0.1Ω·㎝ 이하인 고유 전기저항을 갖는 더미 웨이퍼는 스퍼터링에 의해 형성된 막의 두께를 모니터링하고, 청정도를 확인하기 위하여 더미 웨이퍼로서 매우 양호한 특성을 나타낸다.

Description

더미 웨이퍼
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 반도체 디바이스 제조공정에서 테스트 더미웨이퍼로서 사용되는 더미 웨이퍼에 있어서, 유리상 카본으로 이루어지는 것을 특징으로 하는 더미 웨이퍼.
  2. 제1항에 있어서, 0.005㎛ 이하의 표면거칠기(Ra)를 갖도록 적어도 한면이 경면 연마된 것을 특징으로 하는 더미 웨이퍼.
  3. 제1 또는 제2항에 있어서, 고유전기저항이 0.1Ω·㎝ 이상인 것을 특징으로 하는 더미 웨이퍼.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 열간정수압 가압이시행되는 것을 특징으로 하는 더미 웨이퍼.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960016950A 1995-05-19 1996-05-20 더미 웨이퍼 KR100216389B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7121367A JPH08316283A (ja) 1995-05-19 1995-05-19 ダミーウエハー
JP95-121367 1995-05-19

Publications (2)

Publication Number Publication Date
KR960043075A true KR960043075A (ko) 1996-12-23
KR100216389B1 KR100216389B1 (ko) 1999-08-16

Family

ID=14809496

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960016950A KR100216389B1 (ko) 1995-05-19 1996-05-20 더미 웨이퍼

Country Status (5)

Country Link
US (1) US6150023A (ko)
EP (1) EP0743677A3 (ko)
JP (1) JPH08316283A (ko)
KR (1) KR100216389B1 (ko)
TW (1) TW318943B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100870093B1 (ko) * 2007-02-20 2008-11-25 황병렬 더미 웨이퍼 및 이의 제작 방법

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350520B1 (en) * 1998-08-26 2002-02-26 Reticle, Inc. Consolidated amorphous carbon materials, their manufacture and use
KR100427423B1 (ko) * 2000-05-25 2004-04-13 가부시키가이샤 고베 세이코쇼 Ｃｖｄ용 인너튜브
JP3990575B2 (ja) * 2001-03-05 2007-10-17 三井造船株式会社 膜厚測定用モニタウェハ
US7060622B2 (en) 2002-09-27 2006-06-13 Oki Electric Industry Co., Ltd. Method of forming dummy wafer
JP4538205B2 (ja) * 2003-07-23 2010-09-08 株式会社日立ハイテクノロジーズ 検査データの解析プログラム、検査データ解析装置
US9011654B2 (en) * 2007-04-18 2015-04-21 Ulvac, Inc. Dummy substrate, and start method of, retention/modification method of deposition condition, and stop method of deposition apparatus using same
JP1534137S (ko) 2014-11-13 2015-09-28
JP1534138S (ko) 2014-11-13 2015-09-28
JP1534136S (ko) * 2014-11-13 2015-09-28
CN108666233B (zh) * 2017-03-31 2021-02-05 上海新昇半导体科技有限公司 一种可用作挡片或控片的晶片制备方法及晶片
JP7353209B2 (ja) * 2020-02-20 2023-09-29 東京エレクトロン株式会社 ダミーウエハ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4856887A (en) * 1987-04-01 1989-08-15 Hughes Aircraft Company Lightweight silicon carbide mirror
US5149338A (en) * 1991-07-22 1992-09-22 Fulton Kenneth W Superpolishing agent, process for polishing hard ceramic materials, and polished hard ceramics
JPH06244142A (ja) * 1993-02-19 1994-09-02 Sumitomo Electric Ind Ltd ウェハのエッチング方法
DE69500394T2 (de) * 1994-01-18 1997-10-23 Nisshin Spinning Vorrichtung und Verfahren zur Herstellung von Halbleitern
JPH07240401A (ja) * 1994-02-28 1995-09-12 Nisshinbo Ind Inc 半導体ウエハダミー、その製造方法及び前記半導体ウエハダミーによるプラズマエッチングチャンバー内等の清浄方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100870093B1 (ko) * 2007-02-20 2008-11-25 황병렬 더미 웨이퍼 및 이의 제작 방법

Also Published As

Publication number Publication date
TW318943B (ko) 1997-11-01
KR100216389B1 (ko) 1999-08-16
EP0743677A3 (en) 1997-07-02
JPH08316283A (ja) 1996-11-29
US6150023A (en) 2000-11-21
EP0743677A2 (en) 1996-11-20

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