KR960043006A - 웨이퍼 외주부의 경면 연마방법 및 경면 연마장치 - Google Patents

웨이퍼 외주부의 경면 연마방법 및 경면 연마장치 Download PDF

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Publication number
KR960043006A
KR960043006A KR1019960019606A KR19960019606A KR960043006A KR 960043006 A KR960043006 A KR 960043006A KR 1019960019606 A KR1019960019606 A KR 1019960019606A KR 19960019606 A KR19960019606 A KR 19960019606A KR 960043006 A KR960043006 A KR 960043006A
Authority
KR
South Korea
Prior art keywords
polishing
wafer
tape
notch
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019960019606A
Other languages
English (en)
Korean (ko)
Inventor
후미히코 하세가와
야스요시 구로다
시니치 엔도우
마사요시 세키자와
Original Assignee
이가라시 스구루
신에쯔 한도타이 가부시키가이샤
고토우 가즈오
나오에쯔 일렉트로닉스 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이가라시 스구루, 신에쯔 한도타이 가부시키가이샤, 고토우 가즈오, 나오에쯔 일렉트로닉스 고교 가부시키가이샤 filed Critical 이가라시 스구루
Publication of KR960043006A publication Critical patent/KR960043006A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1019960019606A 1995-05-29 1996-05-28 웨이퍼 외주부의 경면 연마방법 및 경면 연마장치 Abandoned KR960043006A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15381395 1995-05-29
JP95-153813 1995-05-29

Publications (1)

Publication Number Publication Date
KR960043006A true KR960043006A (ko) 1996-12-21

Family

ID=15570671

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960019606A Abandoned KR960043006A (ko) 1995-05-29 1996-05-28 웨이퍼 외주부의 경면 연마방법 및 경면 연마장치

Country Status (4)

Country Link
EP (1) EP0745456B1 (enExample)
KR (1) KR960043006A (enExample)
DE (1) DE69615273T2 (enExample)
TW (1) TW303487B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
JP2001007064A (ja) * 1999-06-17 2001-01-12 Sumitomo Metal Ind Ltd 半導体ウエーハの研削方法
JP4034096B2 (ja) * 2002-03-19 2008-01-16 日本碍子株式会社 半導体支持装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184662A (en) * 1981-05-09 1982-11-13 Hitachi Ltd Chamfering method and device of wafer
JP3027882B2 (ja) * 1992-07-31 2000-04-04 信越半導体株式会社 ウエーハ面取部研磨装置
JP2798347B2 (ja) * 1993-07-08 1998-09-17 信越半導体株式会社 ウェーハのノッチ部研磨装置
JP2832138B2 (ja) * 1993-09-30 1998-12-02 信越半導体株式会社 ウェーハ外周部の研磨装置
JP2832142B2 (ja) * 1993-10-29 1998-12-02 信越半導体株式会社 ウェーハのノッチ部研磨装置
JPH07171749A (ja) * 1993-12-20 1995-07-11 Shin Etsu Handotai Co Ltd ウェーハ外周部の研磨装置
JPH08168946A (ja) * 1994-12-13 1996-07-02 Shin Etsu Handotai Co Ltd ウェーハ外周部の研磨装置

Also Published As

Publication number Publication date
DE69615273T2 (de) 2002-06-27
TW303487B (enExample) 1997-04-21
EP0745456B1 (en) 2001-09-19
DE69615273D1 (de) 2001-10-25
EP0745456A1 (en) 1996-12-04

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19960528

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Patent event code: PA02012R01D

Patent event date: 20010427

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19960528

Comment text: Patent Application

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Patent event date: 20030620

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
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Patent event code: PE07011S01D

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Patent event date: 20040213

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee