KR960019812A - 광기전력 소자와 이를 제조하는 방법 - Google Patents
광기전력 소자와 이를 제조하는 방법 Download PDFInfo
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- KR960019812A KR960019812A KR1019950039800A KR19950039800A KR960019812A KR 960019812 A KR960019812 A KR 960019812A KR 1019950039800 A KR1019950039800 A KR 1019950039800A KR 19950039800 A KR19950039800 A KR 19950039800A KR 960019812 A KR960019812 A KR 960019812A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract 8
- 239000004065 semiconductor Substances 0.000 claims abstract 19
- 239000011247 coating layer Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims 31
- 239000012790 adhesive layer Substances 0.000 claims 16
- 239000002952 polymeric resin Substances 0.000 claims 13
- 229920005989 resin Polymers 0.000 claims 13
- 239000011347 resin Substances 0.000 claims 13
- 229920003002 synthetic resin Polymers 0.000 claims 13
- 239000002245 particle Substances 0.000 claims 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 5
- 239000007822 coupling agent Substances 0.000 claims 5
- 229910021645 metal ion Inorganic materials 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920001187 thermosetting polymer Polymers 0.000 claims 4
- 239000004634 thermosetting polymer Substances 0.000 claims 4
- 239000004593 Epoxy Substances 0.000 claims 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims 3
- 239000011230 binding agent Substances 0.000 claims 3
- 239000003795 chemical substances by application Substances 0.000 claims 3
- 239000011148 porous material Substances 0.000 claims 3
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 2
- 239000006229 carbon black Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000010494 dissociation reaction Methods 0.000 claims 2
- 230000005593 dissociations Effects 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 230000009477 glass transition Effects 0.000 claims 2
- 229910002804 graphite Inorganic materials 0.000 claims 2
- 239000010439 graphite Substances 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 239000004952 Polyamide Substances 0.000 claims 1
- 239000004962 Polyamide-imide Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical class [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- 239000012948 isocyanate Substances 0.000 claims 1
- 150000002513 isocyanates Chemical class 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 229920002312 polyamide-imide Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 150000004756 silanes Chemical class 0.000 claims 1
- 239000002699 waste material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
높은 해제 전압을 갖는 광기전력 소자가 상부 전극으로부터 생성층의 최상부 표면에 배치된 p형 반도체에 캐리어의 주입을 금지시킴으로써 제공된다.
본 발명에 따라서“n”으로 표시된 것으로 가정된 n형 반도체,“i”로 표시된 것으로 가정된 i형 반도체, 및“p”로 표시된 것으로 가정된 p형 반도체가 닙(nip) 접합을 포함하는 구조를 형성하기 위해 기판 위에서 상기 순서대로 박층화되고, 구조의 최소한 하나를 포함한 생성층에 제공되고, 광기전력 소자를 형성하기 위해 생성층이 최상위 표면에 배치된 p-층 위에 상부 전극이 위치된 광기전력 소자는 생성층의 최상부 표면에 위치된 p층이 i층과 접속된 결정을 포함하는 제1p층과 상부 전극에 접속된 비정질을 포함하는 제2p층으로 구성된다는 특성이 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1A도 및 제1B도는 본 발명에 따라서 금속 도선 위에 코팅층이 제공된 컬렉터 전극 구성을 도시한 개략 단면도.
Claims (50)
- 전도성 접착 층에 의해 광 활성 반도체층 상에 제공된 전도성 접착제로 코팅된 전극을 포함하는 구조의 광 기전력 소자에 있어서, 상기 전도성 접착 층은 최소한 2개의 층으로 구성되고, 전극에 인접한 층을 구성층으로 포함한 전도성 접착 층의 연화점(softening point)이 상기 광기전력 소자의 열 이력(heat history)의 최고 온도보다 높은 것을 특징으로 하는 광기전력 소자.
- 제1항에 있어서, 상기 전도성 접착층의 비저항은 0.1Ωcm보다 작지 않고 100Ωcm보다 크지 않은 것을 특징으로 하는 광기전력 소자.
- 제1항에 있어서, 상기 전도성 접착층은 전도성 입자 및 중합체 수지를 포함하는 것을 특징으로 하는 광기전력 소자.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 상기 전도성 접착층의 다공성은 1㎛보다 작지 않은 반지름을 갖는 기공에 대해 0.02㎖/g보다 크지 않은 것을 특징으로 하는 광기전력 소자.
- 제3항에 있어서, 상기 중합체는 부티랄, 우레탄, 에폭시 및 폐녹시로부터 선택된 적어도 하나의 종류인 것을 특징으로 하는 광기전력 소자.
- 제1항에 있어서, 상기 전도성 접착층 내에 포함된 경화제는 블럭 이소시아니트인 것을 특징으로 하는 광기전력 소자.
- 제2항에 있어서, 상기 전도성 입자는 흑연, 카본 블랙, 1n203, TiO2, snO2, ITO, ZnO 및 이것들에 3가 금속 원소를 포함한 도펀트가 부가된 것들로부터 선택된 최소한 하나의 종류인 것을 특징으로 하는 광기전력 소자.
- 제1항에 있어서, 상기 전도성 접착층의 유리 전이점(transition point)은 200℃보다 낮지 않은 것을 특징으로 하는 광기전력 소자.
- 제1항에 있어서, 상기 반도체 광 활성층 위의 투명 전극과 상기 전도성 접착층이 접촉하여 설치된 것을 특징으로 하는 광기전력 소자.
- 전도성 수지를 포함한 코팅 층이 금속 도선 위에 제공되기 때문에 금속 도선이 광기전력 소자와 직접 접촉하지 않는 컬렉터 전극에 있어서, 상기 금속의 금속이온은 상기 광기전력 소자의 반도체층 내로 확산되지 않는 것을 특징으로 하는 컬렉터 전극.
- 제10항에 있어서, 상기 코팅층이 상기 광기전력 소자의 기전력보다 작지 않은 전압이 상기 금속 도선에 인가되는 때에라도 상기 금속 이온의 확산을 방지하는 기능을 갖는 것을 특징으로 하는 컬렉터 전극.
- 제10항에 있어서, 1000보다 작지 않고 50,000보다 크지 않은 분자량을 갖는 중합체 수지가 상기 코팅층을 형성하는 상기 전도성 수지의 바인더 (binder)로서 사용되는 것을 특징으로 하는 컬렉터 전극.
- 제10항에 있어서, 20% 보다 작지 않고 100% 보다 크지 않은 겔 분율(gel fraction)을 갖는 중합체 수지가 상기 코팅층을 형성하는 상기 전도성 수지의 바인더로서 사용되는 것을 특징으로 하는 컬렉터 전극.
- 제10항에 있어서, 상기 코팅 층을 형성하는 상기 전도성 수지의 기공 체적은 0.04cc/g보다 크지 않은 것을 특징으로 하는 컬렉터 전극.
- 제12항에 있어서, 상기 코팅층은 2개 이상의 다수의 층을 포함하고 내부층 또는 최외곽층 이외의 층들을 구성하는 전도성 수지가 제12항에 기술된 중합체 수지를 최소한 포함하는 것을 특징으로 하는 컬렉터 전극.
- 제15항에 있어서, 최외곽층을 구성하는 전도성 수지는 비경화된 열 경화성 중합체 수지인 것을 특징으로 하는 컬렉터 전극.
- 제12항에 있어서, 상기 중합체 수지는 우레탄, 에폭시 및 페놀로부터 선택된 최소한 하나의 종류인 것을 특징으로 하는 컬렉터 전극.
- 제12항에 있어서, 상기 중합체 수지의 경화제는 블럭 이소시아니트인 것을 특징으로 하는 컬렉터 전극.
- 최소한 하나의 핀 접합 또는 pn접합을 포함하는 반도체층과 상기 반도체층의 입사면 쪽에 제공된 컬렉터 전극을 포함하는 광기전력 소자에 있어서, 상기 컬렉터 전극이 제10항에 기술된 컬렉터 전극을 포함하는 것을 특징으로 하는 광기전력 소자.
- 제19항에 있어서, 투명 전극은 상기 반도체층의 입사면에 제공되고 상기 컬렉터 전극은 상기 투명 전극위에 설치된 것을 특징으로 하는 광기전력 소자.
- 제19항에 있어서, 상기 반도체 층은 단결정 실리콘, 다결정 실리콘, 박막 다결정 실리콘, 비정질 실리콘, 비정질 실리콘 게르마늄 및 비정질 실리콘 카본 중 적어도 한 종류를 포함하는 것을 특징으로 하는 광기전력 소자.
- 제19항에 있어서, 상기 핀 접합을 포함하는 상기 반도체 층은 3개 중첩층을 갖는 3중 셀인 것을 특징으로 하는 광기전력 소자.
- 입사면 쪽에 컬렉터 전극을 갖는 구조의 광기전력 소자를 제조하는 방법에 있어서, 제10항에 기술된 컬렉터 전극을 열, 압력 또는 열과 압력에 의해 상기 광기전력 소자의 입사면에 접착시키는 단계를 포함하는 것을 특징으로 하는 광기전력 소자 제조 방법.
- 제23항에 있어서, 상기 컬렉터 전극에 가해진 열은 상기 블럭 이소시아니트의 해리 온도보다 작지 않은 온도로 상승하게 한 것을 특징으로 하는 광기전력 소자 제조 방법.
- 제23항에 있어서, 상기 비경화원 열 경화성 중합체 수지가 20% 보다 작지 않고 100% 보다 크지 않은 겔 분율을 가질 때가지 상기 컬렉터 전극이 가열되는 것을 특징으로 하는 광기전력 소자 제조 방법.
- 전도성 접착층을 포함한 코팅층을 포함한 금속 도선이 코팅층에 의해 광기전력 소자 위에 접착에 의해 형성된 컬렉터 전극에 있어서, 상기 금속 도선의 금속이온이 상기 광기전력 소자의 반도체층 내로 확산하지 않는 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 코팅층은 상기 광기전력 소자의 기전력보다 작지 않은 전압이 상기 금속 도선에 인가되는 때에라도 상기 금속 이온의 확산을 방지하는 기능을 갖는 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 전도성 접착층이 전도성 입자와 중합체 수지를 포함하는 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 전도성 접착층이 커플링제, 전도성 입자 및 중합체 수지를 포함하는 것을 특징으로 하는 컬렉터 전극.
- 제29항에 있어서, 상기 커플링제는 실란 유도체 커플링제, 티타네이트 유도체 커플링제 및 알루미늄 유도체 커플링제로부터 선택된 적어도 하나의 종류인 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 전도성 접착층의 다중성은 1㎛보다 작지 않은 반지름을 갖는 기공에 대해 0.04㎖/g보다 작지 않은 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 500보다 작지 않고 50,000보다 크지 않은 분자량을 갖는 중합체 수지가 상기 코팅층을 형성하는 상기 전도성 수지의 바인더로서 사용된 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 중합체 수지의 겔 분율은 20% 보다 작지 않고 100%보다 크지 않은 것을 특징으로 하는 컬렉터 전극.
- 적어도 2개의 층을 포함하는 코팅층을 포함하는 컬렉터 전극에 있어서, 내부층 또는 최외곽층 이외의 층들을 구성하는 전도성 수지는 제32항에 기술된 중합체 수지를 최소한 포함하는 것을 특징으로 하는 컬렉터 전극.
- 제34항에 있어서, 상기 코팅층은 적어도 2개의 층을 포함하고, 외곽층을 구성하는 전도성 수지는 비경화된 열 경화성 중합체 수지로 구성된 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 코팅층은 적어도 2개의 층을 포함하고 인접한 층을 구성하는 전도성 접착층이 상기 광기전력 소자의 열 이력의 최고 온도보다 높은 연화점을 갖는 것을 특징으로 하는 컬렉터 전극.
- 제36항에 있어서, 상기 전도성 접착층의 비저항은 0.1Ωcm 보다 작지 않고 100Ωcm 보다 크지 않은 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 중합체 수지는 폴리아미드, 폴리아미드이미드, 우레탄, 에폭시, 부티랄, 페놀 및 폴리이미드로부터 선택된 적어도 한 종류인 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 중합체 수지의 경화제는 블럭 이소시아니트인 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 유리 전이점은 100℃ 보다 낮지 않은 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 전도성 입자의 주요 임자의 평균 입자 지름은 0.02㎛보다 작지 않고 15㎛ 보다 크지 않은 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 전도성 입자는 흑연, 카본 블랙, In2O3, TiO2, snO2, ITO, ZnO 및 이것들에 3가 금속 원소를 포함한 도펀트가 주입된 것들로부터 선택된 최소한 적어도 하나의 종류인 것을 특징으로 하는 컬렉터 전극.
- 제26항에 있어서, 상기 광기전력 소자의 반도체층 위에 설치된 투명 전극과 상기 전도성 접착층은 접촉하여 제공되는 것을 특징으로 하는 컬렉터 전극.
- 적어도 하나의 핀 접합 또는 pn 접합을 포함하는 반도체층과 상기 반도체층의 입사면 쪽에 제공된 컬렉터 전극을 포함하는 광기전력 소자에 있어서, 상기 컬렉터 전극은 제26항에 기술된 컬렉터 전극인 것을 특징으로 하는 광기전력 소자.
- 제44항에 있어서, 투명 전극은 상기 반도체층의 입사면 쪽에 제공되고 상기 컬렉터 전극은 상기 투명 전극 위해 설치된 것을 특징으로 하는 광기전력 소자.
- 제44항에 있어서, 상기 반도체층은 단결정 실리콘, 다결정 실리콘, 박막 다결정 실리콘, 비정질 실리콘, 비정질 실리콘 게르마늄 및 비정질 실리콘 카본의 적어도 한 종류를 포함하는 것을 특징으로 하는 광기전력 소자.
- 제44항에 있어서, 상기 반도체층은 핀 접합 또는 pn접합을 포함하는 3개의 중첩된 층을 포함하는 것을 특징으로 하는 광기전력 소자.
- 광기전력 소자를 제조하는 방법에 있어서, 제1항 내지 제18항 중의 어느 하나에 기술된 컬렉터 전극은 열, 압력 또는 열 및 압력에 의해 상기 광기전력 소자의 입사면 쪽에 부착된 것을 특징으로 하는 방법.
- 제48항에 있어서, 상기 컬렉터 전극에 가해진 열은 상기 블럭 이소시아니트의 해리 온도보다 작지 않은 온도로 상승하게 하는 것을 특징으로 하는 광기전력 소자 제조 방법.
- 제48항에 있어서, 상기 컬렉터 전극은 상기 비경화된 열 경화성 중합체 수지가 20%보다 작지 않고 100%보다 크지 않은 겔 분율을 가질 때까지 가열되는 것을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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JPH036867A (ja) * | 1989-06-05 | 1991-01-14 | Mitsubishi Electric Corp | 光発電素子の電極構造、形成方法、及びその製造装置 |
US5084104A (en) | 1989-12-05 | 1992-01-28 | Cultor, Ltd. | Method for recovering xylose |
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US5428249A (en) * | 1992-07-15 | 1995-06-27 | Canon Kabushiki Kaisha | Photovoltaic device with improved collector electrode |
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JP3057671B2 (ja) * | 1993-06-14 | 2000-07-04 | キヤノン株式会社 | 太陽電池モジュール |
JP3170105B2 (ja) * | 1993-07-01 | 2001-05-28 | キヤノン株式会社 | 太陽電池モジュール |
JPH07302926A (ja) * | 1994-04-30 | 1995-11-14 | Canon Inc | 太陽電池モジュール |
US5457057A (en) * | 1994-06-28 | 1995-10-10 | United Solar Systems Corporation | Photovoltaic module fabrication process |
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JP2992464B2 (ja) * | 1994-11-04 | 1999-12-20 | キヤノン株式会社 | 集電電極用被覆ワイヤ、該集電電極用被覆ワイヤを用いた光起電力素子及びその製造方法 |
-
1995
- 1995-10-09 JP JP7261152A patent/JP2992464B2/ja not_active Expired - Lifetime
- 1995-10-30 US US08/544,981 patent/US5681402A/en not_active Expired - Lifetime
- 1995-11-01 AU AU36610/95A patent/AU694272B2/en not_active Ceased
- 1995-11-01 CA CA002161932A patent/CA2161932C/en not_active Expired - Fee Related
- 1995-11-03 CN CNB021499322A patent/CN1235293C/zh not_active Expired - Fee Related
- 1995-11-03 CN CN95120983A patent/CN1110860C/zh not_active Expired - Fee Related
- 1995-11-03 DE DE69534938T patent/DE69534938T2/de not_active Expired - Lifetime
- 1995-11-03 EP EP03025818A patent/EP1394862A3/en not_active Withdrawn
- 1995-11-03 EP EP95117326A patent/EP0710990B1/en not_active Expired - Lifetime
- 1995-11-04 KR KR1019950039800A patent/KR100325952B1/ko not_active IP Right Cessation
-
1996
- 1996-12-12 US US08/764,301 patent/US5861324A/en not_active Expired - Lifetime
-
1997
- 1997-07-11 US US08/893,623 patent/US6472594B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1131824A (zh) | 1996-09-25 |
CN1235293C (zh) | 2006-01-04 |
KR100325952B1 (ko) | 2002-10-25 |
EP0710990A2 (en) | 1996-05-08 |
EP1394862A2 (en) | 2004-03-03 |
JPH08236796A (ja) | 1996-09-13 |
CA2161932A1 (en) | 1996-05-05 |
EP0710990A3 (en) | 1996-05-15 |
CN1110860C (zh) | 2003-06-04 |
EP1394862A3 (en) | 2007-06-13 |
US5861324A (en) | 1999-01-19 |
US5681402A (en) | 1997-10-28 |
JP2992464B2 (ja) | 1999-12-20 |
US6472594B1 (en) | 2002-10-29 |
AU3661095A (en) | 1996-05-09 |
DE69534938D1 (de) | 2006-05-24 |
EP0710990B1 (en) | 2006-04-19 |
AU694272B2 (en) | 1998-07-16 |
DE69534938T2 (de) | 2006-11-09 |
CN1437270A (zh) | 2003-08-20 |
CA2161932C (en) | 2000-04-25 |
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