KR960012509A - 저 누설 디램 셀용 soi 깊은 홈 디램 및 가공방법 - Google Patents

저 누설 디램 셀용 soi 깊은 홈 디램 및 가공방법

Info

Publication number
KR960012509A
KR960012509A KR1019950031832A KR19950031832A KR960012509A KR 960012509 A KR960012509 A KR 960012509A KR 1019950031832 A KR1019950031832 A KR 1019950031832A KR 19950031832 A KR19950031832 A KR 19950031832A KR 960012509 A KR960012509 A KR 960012509A
Authority
KR
South Korea
Prior art keywords
dram
processing method
deep groove
low leakage
soi
Prior art date
Application number
KR1019950031832A
Other languages
English (en)
Other versions
KR100518157B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012509A publication Critical patent/KR960012509A/ko
Application granted granted Critical
Publication of KR100518157B1 publication Critical patent/KR100518157B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
KR1019950031832A 1994-09-26 1995-09-26 트렌치 dram셀 제조방법 KR100518157B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/313,507 US5627092A (en) 1994-09-26 1994-09-26 Deep trench dram process on SOI for low leakage DRAM cell
US08/313,507 1994-09-26

Publications (2)

Publication Number Publication Date
KR960012509A true KR960012509A (ko) 1996-04-20
KR100518157B1 KR100518157B1 (ko) 2006-06-13

Family

ID=23215977

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031832A KR100518157B1 (ko) 1994-09-26 1995-09-26 트렌치 dram셀 제조방법

Country Status (7)

Country Link
US (1) US5627092A (ko)
EP (1) EP0703625B1 (ko)
JP (1) JP3963970B2 (ko)
KR (1) KR100518157B1 (ko)
AT (1) ATE268945T1 (ko)
DE (1) DE69533121T2 (ko)
TW (1) TW288203B (ko)

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Also Published As

Publication number Publication date
EP0703625B1 (en) 2004-06-09
KR100518157B1 (ko) 2006-06-13
JPH08111513A (ja) 1996-04-30
ATE268945T1 (de) 2004-06-15
DE69533121D1 (de) 2004-07-15
TW288203B (ko) 1996-10-11
DE69533121T2 (de) 2005-07-07
EP0703625A2 (en) 1996-03-27
EP0703625A3 (en) 1999-03-03
US5627092A (en) 1997-05-06
JP3963970B2 (ja) 2007-08-22

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