KR960009147A - 전자 메모리와 이의 제조 및 사용 방법 - Google Patents
전자 메모리와 이의 제조 및 사용 방법 Download PDFInfo
- Publication number
- KR960009147A KR960009147A KR1019950024512A KR19950024512A KR960009147A KR 960009147 A KR960009147 A KR 960009147A KR 1019950024512 A KR1019950024512 A KR 1019950024512A KR 19950024512 A KR19950024512 A KR 19950024512A KR 960009147 A KR960009147 A KR 960009147A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacture
- electronic memory
- electronic
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/014—Capacitor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/288,580 US5452244A (en) | 1994-08-10 | 1994-08-10 | Electronic memory and methods for making and using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960009147A true KR960009147A (ko) | 1996-03-22 |
Family
ID=23107731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950024512A KR960009147A (ko) | 1994-08-10 | 1995-08-09 | 전자 메모리와 이의 제조 및 사용 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US5452244A (ko) |
| EP (1) | EP0697701A3 (ko) |
| JP (1) | JPH08191108A (ko) |
| KR (1) | KR960009147A (ko) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960006068A (ko) * | 1994-07-29 | 1996-02-23 | 가네꼬 히사시 | 반도체 장치 및 이의 제조 방법 |
| JP2783271B2 (ja) * | 1995-01-30 | 1998-08-06 | 日本電気株式会社 | 半導体記憶装置 |
| US5701143A (en) * | 1995-01-31 | 1997-12-23 | Cirrus Logic, Inc. | Circuits, systems and methods for improving row select speed in a row select memory device |
| JPH08250674A (ja) * | 1995-03-15 | 1996-09-27 | Toshiba Microelectron Corp | 半導体記憶装置 |
| JP3400181B2 (ja) * | 1995-04-25 | 2003-04-28 | ローム株式会社 | 半導体装置およびその製造方法 |
| KR0168355B1 (ko) * | 1995-11-02 | 1999-02-01 | 김광호 | 반도체장치의 배선 형성방법 |
| US5585285A (en) * | 1995-12-06 | 1996-12-17 | Micron Technology, Inc. | Method of forming dynamic random access memory circuitry using SOI and isolation trenches |
| KR100248205B1 (ko) * | 1997-06-25 | 2000-03-15 | 김영환 | 반도체 메모리 디바이스 및 그 형성방법 |
| US5918124A (en) * | 1997-10-06 | 1999-06-29 | Vanguard International Semiconductor Corporation | Fabrication process for a novel multi-storage EEPROM cell |
| US5956286A (en) * | 1997-10-28 | 1999-09-21 | International Business Machines Corporation | Data processing system and method for implementing a multi-port memory cell |
| US5870349A (en) * | 1997-10-28 | 1999-02-09 | International Business Machines Corporation | Data processing system and method for generating memory control signals with clock skew tolerance |
| US5877976A (en) * | 1997-10-28 | 1999-03-02 | International Business Machines Corporation | Memory system having a vertical bitline topology and method therefor |
| US5907508A (en) * | 1997-10-28 | 1999-05-25 | International Business Machines Corporation | Method and apparatus for single clocked, non-overlapping access in a multi-port memory cell |
| US6261934B1 (en) | 1998-03-31 | 2001-07-17 | Texas Instruments Incorporated | Dry etch process for small-geometry metal gates over thin gate dielectric |
| US6137739A (en) * | 1998-06-29 | 2000-10-24 | Hyundai Electronics Industries Co., Ltd. | Multilevel sensing circuit and method thereof |
| KR100309077B1 (ko) * | 1999-07-26 | 2001-11-01 | 윤종용 | 삼중 금속 배선 일 트랜지스터/일 커패시터 및 그 제조 방법 |
| JP4686189B2 (ja) | 2002-10-24 | 2011-05-18 | パラテック ファーマシューティカルズ インコーポレイテッド | Ｒｎａを調節するための置換テトラサイクリン化合物の使用方法 |
| US6809977B1 (en) * | 2003-04-02 | 2004-10-26 | Reflectivity, Inc | Method for reading and writing memory cells of spatial light modulators used in display systems |
| JP2005313627A (ja) * | 2004-03-31 | 2005-11-10 | Seiko Epson Corp | 液体噴射装置及び液体噴射装置の液体吐出方法 |
| JP2010093288A (ja) * | 2009-12-18 | 2010-04-22 | Renesas Technology Corp | 半導体装置 |
| JP5666162B2 (ja) * | 2010-04-14 | 2015-02-12 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置 |
| US10956432B2 (en) * | 2017-08-30 | 2021-03-23 | Gsi Technology Inc. | One by one selection of items of a set |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6055386A (ja) * | 1983-09-07 | 1985-03-30 | 日本電気株式会社 | 半導体メモリ |
| JPH0460984A (ja) * | 1990-06-25 | 1992-02-26 | Matsushita Electron Corp | 半導体記憶装置 |
| JPH07122989B2 (ja) * | 1990-06-27 | 1995-12-25 | 株式会社東芝 | 半導体記憶装置 |
| JP2660111B2 (ja) * | 1991-02-13 | 1997-10-08 | 株式会社東芝 | 半導体メモリセル |
| JP3181311B2 (ja) * | 1991-05-29 | 2001-07-03 | 株式会社東芝 | 半導体記憶装置 |
| JP3464803B2 (ja) * | 1991-11-27 | 2003-11-10 | 株式会社東芝 | 半導体メモリセル |
| KR930015002A (ko) * | 1991-12-18 | 1993-07-23 | 김광호 | 반도체 메모리 장치 및 그 제조방법 |
| DE4321638A1 (de) * | 1992-09-19 | 1994-03-24 | Samsung Electronics Co Ltd | Halbleiterspeicherbauelement mit einem Kondensator und Verfahren zu seiner Herstellung |
| TW227628B (ko) * | 1992-12-10 | 1994-08-01 | Samsung Electronics Co Ltd | |
| KR960006718B1 (ko) * | 1992-12-31 | 1996-05-22 | 현대전자산업주식회사 | 반도체 기억장치의 커패시터 및 그 제조방법 |
-
1994
- 1994-08-10 US US08/288,580 patent/US5452244A/en not_active Expired - Lifetime
-
1995
- 1995-03-27 US US08/410,869 patent/US5529945A/en not_active Expired - Lifetime
- 1995-03-27 US US08/410,868 patent/US5567963A/en not_active Expired - Lifetime
- 1995-08-08 EP EP95401853A patent/EP0697701A3/en not_active Withdrawn
- 1995-08-09 KR KR1019950024512A patent/KR960009147A/ko not_active Application Discontinuation
- 1995-08-09 JP JP7203389A patent/JPH08191108A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0697701A2 (en) | 1996-02-21 |
| US5452244A (en) | 1995-09-19 |
| US5529945A (en) | 1996-06-25 |
| US5567963A (en) | 1996-10-22 |
| JPH08191108A (ja) | 1996-07-23 |
| EP0697701A3 (en) | 1996-12-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application | ||
| J201 | Request for trial against refusal decision | ||
| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 19991124 Effective date: 20001130 |