KR960000890B1 - 반도체 메모리 장치 - Google Patents

반도체 메모리 장치 Download PDF

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Publication number
KR960000890B1
KR960000890B1 KR1019920010965A KR920010965A KR960000890B1 KR 960000890 B1 KR960000890 B1 KR 960000890B1 KR 1019920010965 A KR1019920010965 A KR 1019920010965A KR 920010965 A KR920010965 A KR 920010965A KR 960000890 B1 KR960000890 B1 KR 960000890B1
Authority
KR
South Korea
Prior art keywords
signal
column
bit line
line pair
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920010965A
Other languages
English (en)
Korean (ko)
Other versions
KR930001220A (ko
Inventor
가즈히꼬 아베
Original Assignee
니뽄 덴끼 가부시끼가이샤
세끼모또 다다히로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니뽄 덴끼 가부시끼가이샤, 세끼모또 다다히로 filed Critical 니뽄 덴끼 가부시끼가이샤
Publication of KR930001220A publication Critical patent/KR930001220A/ko
Application granted granted Critical
Publication of KR960000890B1 publication Critical patent/KR960000890B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
KR1019920010965A 1991-06-27 1992-06-24 반도체 메모리 장치 Expired - Fee Related KR960000890B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-183110 1991-06-27
JP3183110A JP2876830B2 (ja) 1991-06-27 1991-06-27 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR930001220A KR930001220A (ko) 1993-01-16
KR960000890B1 true KR960000890B1 (ko) 1996-01-13

Family

ID=16129954

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920010965A Expired - Fee Related KR960000890B1 (ko) 1991-06-27 1992-06-24 반도체 메모리 장치

Country Status (5)

Country Link
US (1) US5313434A (enExample)
EP (1) EP0520299B1 (enExample)
JP (1) JP2876830B2 (enExample)
KR (1) KR960000890B1 (enExample)
DE (1) DE69216695T2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3011570B2 (ja) * 1993-04-30 2000-02-21 株式会社東芝 半導体メモリ
JP2875476B2 (ja) * 1993-12-06 1999-03-31 松下電器産業株式会社 半導体メモリ装置
US5438548A (en) * 1993-12-10 1995-08-01 Texas Instruments Incorporated Synchronous memory with reduced power access mode
JPH07220487A (ja) * 1994-01-27 1995-08-18 Toshiba Corp 不揮発性メモリ回路
US5493532A (en) * 1994-05-31 1996-02-20 Sgs-Thomson Microelectronics, Inc. Integrated circuit memory with disabled edge transition pulse generation during special test mode
JPH07326192A (ja) * 1994-05-31 1995-12-12 Toshiba Micro Comput Eng Corp 半導体記憶装置
US5566434A (en) * 1994-06-15 1996-10-22 Jps Automotive Products Corporation Air bag for use in a motor vehicle and method of producing same
JP3257938B2 (ja) * 1995-11-20 2002-02-18 株式会社日立製作所 半導体集積回路装置
JP3225813B2 (ja) * 1995-11-20 2001-11-05 富士通株式会社 半導体記憶装置
JPH09265791A (ja) * 1996-03-28 1997-10-07 Nec Corp 半導体記憶装置
KR100218307B1 (ko) * 1996-07-01 1999-09-01 구본준 반도체 메모리소자의 칼럼디코딩회로
US5767737A (en) * 1996-08-09 1998-06-16 Mosel Vitelic Methods and apparatus for charging a sense amplifier
US5768200A (en) * 1996-12-03 1998-06-16 Mosel Vitelic Corporation Charging a sense amplifier
US5828610A (en) * 1997-03-31 1998-10-27 Seiko Epson Corporation Low power memory including selective precharge circuit
KR100253297B1 (ko) * 1997-06-11 2000-04-15 김영환 메모리 소자의 어드레스 천이 검출회로
JP3984331B2 (ja) * 1997-08-01 2007-10-03 松下電器産業株式会社 差動伝送方法及び差動伝送回路
US6072738A (en) * 1998-03-09 2000-06-06 Lsi Logic Corporation Cycle time reduction using an early precharge
US6236603B1 (en) * 2000-01-21 2001-05-22 Advanced Micro Devices, Inc. High speed charging of core cell drain lines in a memory device
JP4492897B2 (ja) * 2000-06-15 2010-06-30 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4458699B2 (ja) * 2001-03-06 2010-04-28 株式会社東芝 半導体集積回路
US6788591B1 (en) * 2003-08-26 2004-09-07 International Business Machines Corporation System and method for direct write to dynamic random access memory (DRAM) using PFET bit-switch
JP4851189B2 (ja) * 2006-01-11 2012-01-11 エルピーダメモリ株式会社 半導体記憶装置及びそのテスト方法
US8773924B2 (en) * 2012-12-05 2014-07-08 Lsi Corporation Read assist scheme for reducing read access time in a memory
JP2015032327A (ja) * 2013-07-31 2015-02-16 ルネサスエレクトロニクス株式会社 半導体装置、及びデータ読み出し方法
US10431269B2 (en) * 2015-02-04 2019-10-01 Altera Corporation Methods and apparatus for reducing power consumption in memory circuitry by controlling precharge duration

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598192A (ja) * 1982-07-07 1984-01-17 Toshiba Corp 半導体記憶装置
US4719602A (en) * 1985-02-07 1988-01-12 Visic, Inc. Memory with improved column access
US4636991A (en) * 1985-08-16 1987-01-13 Motorola, Inc. Summation of address transition signals
JPS6286599A (ja) * 1985-10-09 1987-04-21 Nec Corp 半導体記憶装置
US4712197A (en) * 1986-01-28 1987-12-08 Motorola, Inc. High speed equalization in a memory
JPH0770214B2 (ja) * 1986-11-14 1995-07-31 三菱電機株式会社 半導体記憶装置
US4922461A (en) * 1988-03-30 1990-05-01 Kabushiki Kaisha Toshiba Static random access memory with address transition detector
JPH01251496A (ja) * 1988-03-31 1989-10-06 Toshiba Corp スタティック型ランダムアクセスメモリ
JPH0814989B2 (ja) * 1989-05-09 1996-02-14 日本電気株式会社 内部同期型スタティックｒａｍ
EP0419852A3 (en) * 1989-09-22 1992-08-05 Texas Instruments Incorporated A memory with selective address transition detection for cache operation

Also Published As

Publication number Publication date
US5313434A (en) 1994-05-17
KR930001220A (ko) 1993-01-16
JPH056672A (ja) 1993-01-14
JP2876830B2 (ja) 1999-03-31
EP0520299A2 (en) 1992-12-30
EP0520299A3 (enExample) 1995-03-22
DE69216695D1 (de) 1997-02-27
DE69216695T2 (de) 1997-08-07
EP0520299B1 (en) 1997-01-15

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