KR950034503A - 알루미늄부재의 표면처리방법및 플라즈마 처리장치 - Google Patents

알루미늄부재의 표면처리방법및 플라즈마 처리장치 Download PDF

Info

Publication number
KR950034503A
KR950034503A KR1019950001957A KR19950001957A KR950034503A KR 950034503 A KR950034503 A KR 950034503A KR 1019950001957 A KR1019950001957 A KR 1019950001957A KR 19950001957 A KR19950001957 A KR 19950001957A KR 950034503 A KR950034503 A KR 950034503A
Authority
KR
South Korea
Prior art keywords
film
aluminum
aluminum member
chamber
anodizing
Prior art date
Application number
KR1019950001957A
Other languages
English (en)
Other versions
KR100299569B1 (ko
Inventor
하야시 오츠키
Original Assignee
이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이노우에 아키라, 도오교오 에레구토론 가부시끼가이샤 filed Critical 이노우에 아키라
Publication of KR950034503A publication Critical patent/KR950034503A/ko
Application granted granted Critical
Publication of KR100299569B1 publication Critical patent/KR100299569B1/ko

Links

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Plasma Technology (AREA)

Abstract

알루미늄 전극의 표면에 양극산화에 의하여 알루마이트 피막을 형성함. 알루마이트 피막에 형성된 가느다란 구멍을 막는다. 이 후, 알루마이트 피막의 표면상에 질화실리콘막을 플라즈마 CVD에 의하여 형성한다. 표면에 알루마이트 피막 및 질화실리콘막이 차례로 적층된 알루미늄 전극을 이용한 플라즈마 에칭장치에 있어서, 프로세서 가스로서 HBr/HC1 가스를 이용하여 웨이퍼의 플라즈마에칭을 행한다. HBr/HC1로부터 발생한 활성 래디컬은, 웨이퍼를 에칭함과 함께, 알루미늄 전극을 공격한다. 알루미늄 전극은, 질화실리콘막으로 보호되어 있기 때문에, 알루미늄의 바탕 및 알루마이트피막이 에칭되는 것이 방지된다. 이 때문에, 알루미늄의 바탕 및 알루마이트 피막증의 불순물이 플라즈마 에칭장치의 챔버내로 날아흩어지지 않는다. 이 결과, 웨이퍼가 불순물로 오염되는 것이 방지된다.

Description

알루미늄부재의 표면처리방법 및 플라즈마 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 알루미늄 부재의 표면처리방법의 일예의 각 공정을 나타내는 플로우 챠트를 나타낸다. 제2도는 제1도에 나타낸 표면처리방법에 의하여 얻어진 알루미늄 부재를 이용한 플라즈마 처리장치의 일예를 나타내는 모식도이다.

Claims (12)

  1. 알루미늄 부재의 표면에 양극산화에 의하여 양극산화 피막을 형성하는 공정과, 상기 양극산화에서 상기 양극산화피막에 형성된 가느다란 구멍의 구멍막기 처리를 행하는 공정 및, 상기 구멍막기 처리 후, 상기 양극산화피막의 표면상에 플라즈마 CVD에 의하여 실리콘계 피막을 형성하는 공정을 포함하여 구성되는 알루미늄 부재의 표면처리방법.
  2. 제1항에 있어서, 실리콘계 피막의 두께가 5~10㎛의 범위내에 있는 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 알루미늄 부재가 SiO2및 SiN2로 이루어지는 군에서 선택되는 적어도 한개인 방법.
  4. 제1항에 있어서, 알루미늄 부재가, 플라즈마 처리장치에 이용되는 부재인 방법.
  5. 제4항에 있어서, 알루미늄 부재가, 플라즈마 처리장치의 얹어놓기 전극, 대향전극 및 챔버내의 내벽부재인 방법.
  6. 제1항에 있어서, 양극산화처리의 전에, 알루미늄 부재의 표면을 포밍(forming)하는 방법.
  7. 챔버와, 상기 챔버의 내부에 설치된 얹어놓기 전극, 상기 얹어놓기 전극에 대향하여 배치된 대향전극과, 상기 챔버에 프로세스가스를 공급하는 프로세스 가스 공급수단 및 상기 얹어놓기 전극 및 상기 대향전극의 적어도 한쪽에 고주파를 공급하는 고주파전원을 포함하여 구성되며, 상기 챔버와, 상기 얹어놓기 전극 및 대향전극 중의 적어도 한개의 알루미늄으로 구성될 때, 상기 알루미늄의 표면에 양극산화막 및 실리콘계 피막이 차례로 적층되어 있는 플라즈마 처리장치.
  8. 제7항에 있어서, 실리콘계 피막의 두께가 5~10㎛의 범위내에 있는 것을 특징으로 하는 장치.
  9. 제7항에 있어서, 실리콘계 피막이 SiO2및 SiN2로 이루어지는 군에서 선택되는 적어도 한개인 장치.
  10. 제7항에 있어서, 대향전극에 프로세스 가스를 공급하는 다수의 개구가 형성되고, 또한, 이들 토출구의 안둘레면을 포함하는 상기 대향전극의 표면에 양극산화막 및 실리콘계 피막이 형성되어 있는 장치.
  11. 제7항에 있어서, 플라즈마에칭처리를 위한 것인 장치.
  12. 제11항에 있어서, 프로세서 가스로서 HBr/HCl가스를 이용하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950001957A 1994-02-03 1995-02-03 알루미늄부재의표면처리방법및플라즈마처리장치 KR100299569B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03309194A JP3308091B2 (ja) 1994-02-03 1994-02-03 表面処理方法およびプラズマ処理装置
JP94-33091 1994-02-03

Publications (2)

Publication Number Publication Date
KR950034503A true KR950034503A (ko) 1995-12-28
KR100299569B1 KR100299569B1 (ko) 2001-12-01

Family

ID=12377008

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950001957A KR100299569B1 (ko) 1994-02-03 1995-02-03 알루미늄부재의표면처리방법및플라즈마처리장치

Country Status (4)

Country Link
US (1) US5494713A (ko)
JP (1) JP3308091B2 (ko)
KR (1) KR100299569B1 (ko)
TW (1) TW311940B (ko)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993594A (en) * 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
JP2000054123A (ja) * 1998-08-07 2000-02-22 Mitsubishi Electric Corp 半導体装置の製造方法および製造装置
JP2000245115A (ja) * 1999-02-23 2000-09-08 Sankyo Seiki Mfg Co Ltd アルミ製回転体の製造方法
KR100745495B1 (ko) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6451157B1 (en) 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
US6646223B2 (en) * 1999-12-28 2003-11-11 Texas Instruments Incorporated Method for improving ash rate uniformity in photoresist ashing process equipment
KR100831292B1 (ko) * 1999-12-30 2008-05-22 엘지디스플레이 주식회사 드라이 에칭장치
TW518690B (en) * 2000-09-14 2003-01-21 Tokyo Electron Ltd Plasma processing apparatus and its electrode plate, its electrode supporting body and its shield ring
US6613442B2 (en) 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6790242B2 (en) 2000-12-29 2004-09-14 Lam Research Corporation Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof
JP2003034894A (ja) 2001-07-25 2003-02-07 Kobe Steel Ltd 耐腐食性に優れたＡｌ合金部材
US7371467B2 (en) * 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
JP4503270B2 (ja) * 2002-11-28 2010-07-14 東京エレクトロン株式会社 プラズマ処理容器内部材
KR100772740B1 (ko) 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
JP2004225113A (ja) * 2003-01-23 2004-08-12 Kobe Steel Ltd 耐腐食性及び耐プラズマ性に優れたＡｌ合金部材
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
JP4694771B2 (ja) * 2003-03-12 2011-06-08 財団法人国際科学振興財団 ポンプおよびポンプ部材の製造方法
JP4532479B2 (ja) * 2003-03-31 2010-08-25 東京エレクトロン株式会社 処理部材のためのバリア層およびそれと同じものを形成する方法。
KR100918528B1 (ko) 2003-03-31 2009-09-21 도쿄엘렉트론가부시키가이샤 처리부재 상에 인접한 코팅을 결합시키는 방법
JP4291034B2 (ja) * 2003-04-25 2009-07-08 大日本スクリーン製造株式会社 洗浄装置および基板処理装置
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US20050011447A1 (en) * 2003-07-14 2005-01-20 Tokyo Electron Limited Method and apparatus for delivering process gas to a process chamber
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US20060225654A1 (en) * 2005-03-29 2006-10-12 Fink Steven T Disposable plasma reactor materials and methods
JP4751198B2 (ja) * 2005-12-28 2011-08-17 株式会社神戸製鋼所 プラズマ処理装置用部材
US20070216026A1 (en) * 2006-03-20 2007-09-20 Adams Zhu Aluminum bump bonding for fine aluminum wire
US20080216958A1 (en) * 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
KR101204496B1 (ko) * 2007-05-18 2012-11-26 가부시키가이샤 아루박 플라즈마 처리 장치 및 방착 부재의 제조 방법
DE102007037903A1 (de) * 2007-08-10 2009-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Reinigung von Oberflächen sowie Verwendung des Verfahrens
KR100899894B1 (ko) 2007-09-05 2009-05-29 고려대학교 산학협력단 집적 수동 디바이스 및 그 제조 방법
EP2400044B1 (en) * 2009-02-17 2016-09-07 Sharp Kabushiki Kaisha Method for producing mold
RU2480540C1 (ru) * 2009-03-05 2013-04-27 Шарп Кабусики Кайся Способ для изготовления форм и электродная конструкция для использования в данном способе
US20120318457A1 (en) * 2011-06-17 2012-12-20 Son Nguyen Materials and coatings for a showerhead in a processing system
JP6068849B2 (ja) 2012-07-17 2017-01-25 東京エレクトロン株式会社 上部電極、及びプラズマ処理装置
KR20150129660A (ko) 2013-03-14 2015-11-20 어플라이드 머티어리얼스, 인코포레이티드 기판 상의 고순도 알루미늄 탑 코트
US9663870B2 (en) 2013-11-13 2017-05-30 Applied Materials, Inc. High purity metallic top coat for semiconductor manufacturing components
US20160362782A1 (en) * 2015-06-15 2016-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
TWI756475B (zh) * 2017-10-06 2022-03-01 日商東京威力科創股份有限公司 抑制粒子產生之方法及真空裝置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02213480A (ja) * 1989-02-14 1990-08-24 Nippon Light Metal Co Ltd 高周波プラズマ発生用アルミニウム電極
US5192610A (en) * 1990-06-07 1993-03-09 Applied Materials, Inc. Corrosion-resistant protective coating on aluminum substrate and method of forming same

Also Published As

Publication number Publication date
US5494713A (en) 1996-02-27
TW311940B (ko) 1997-08-01
JPH07216589A (ja) 1995-08-15
KR100299569B1 (ko) 2001-12-01
JP3308091B2 (ja) 2002-07-29

Similar Documents

Publication Publication Date Title
KR950034503A (ko) 알루미늄부재의 표면처리방법및 플라즈마 처리장치
US6106663A (en) Semiconductor process chamber electrode
TWI450328B (zh) Plasma etch methods and computer-readable memory media
KR0159097B1 (ko) 웨이퍼의 전방표면으로부터의 재료들의 제거를 방지하면서 반도체 웨이퍼의 후방측면과 단부테두리로부터 증착부를 제거하기 위한 방법 및 장치
KR20030074833A (ko) 반도체 처리용 포커스링 및 플라즈마 처리 장치
KR940011662A (ko) 이방성 에칭방법 및 장치
KR970058390A (ko) 플라즈마 처리장치의 챔버 에칭방법 및 그를 실시하기 위한 플라즈마 처리 장치
JP3162873U (ja) プラズマ処理装置の交換可能な上側チャンバ部
JP2017098323A (ja) プラズマエッチング方法
KR960035858A (ko) 실리콘에 테이퍼진 개구부를 형성하기 위한 방법
JPS58204537A (ja) プラズマエツチング方法
WO1984003798A1 (en) Reactive ion etching apparatus
JPS6316625A (ja) ドライエツチング用電極
KR960702185A (ko) 반도체 기판의 스트립핑, 불활성화 및 부식억제 방법(stripping, passivation and corrosion inhibition of semiconductor substrates)
KR20020085879A (ko) 에칭공정단계의 종료점을 측정하는 방법
JP3408345B2 (ja) エッチング装置及びエッチング方法
KR20010023762A (ko) 에칭 균일성 향상 장치 및 방법
JPH07106300A (ja) 静電チャック装置
KR100761680B1 (ko) 플라즈마 처리장치
JP2885150B2 (ja) ドライエッチング装置のドライクリーニング方法
KR200197657Y1 (ko) 플라즈마 식각 장치
KR100211654B1 (ko) 반도체 건식식각설비의 가스분배판
KR0155905B1 (ko) 하부 전극에 아이솔레이션 링을 구비한 건식 에칭 장치
KR200265645Y1 (ko) 플라즈마 챔버의 컴파인먼트링
KR20050070683A (ko) 건식식각장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130610

Year of fee payment: 13

FPAY Annual fee payment

Payment date: 20140530

Year of fee payment: 14

EXPY Expiration of term