KR950034488A - 반도체 제조장치 및 반도체장치의 제조방법과 반도체장치 - Google Patents

반도체 제조장치 및 반도체장치의 제조방법과 반도체장치 Download PDF

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KR950034488A
KR950034488A KR1019950004237A KR19950004237A KR950034488A KR 950034488 A KR950034488 A KR 950034488A KR 1019950004237 A KR1019950004237 A KR 1019950004237A KR 19950004237 A KR19950004237 A KR 19950004237A KR 950034488 A KR950034488 A KR 950034488A
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chambers
semiconductor device
atmosphere
processing
processing chambers
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요시오 가와무라
시게오 모리야마
다쯔하루 야마모또
후미히꼬 우찌다
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가나이 쯔또무
가부시끼가이샤 히다찌세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

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Abstract

반도체장치의 제조장치에 관한 것으로서, 서로 다른 분위기조건의 처리공간의 분위기조건을 유지한 상태로 각 실의 처리분위기에 기판을 노출시켜서 처리를 실행하여 높은 스루풋으로 반도체장치를 제조할 수 있는 반도체 제조장치의 제공, 반도체장치의 제조방법의 제공 및 기판오염이 없는 고성능의 반도체장치를 높은 제조효율로 제공하기 위해서, 불활성가스 분위기의 버퍼실에서 기판의 유지반송수단에 고정된 기판을 적어도 그 표면의 일부만을 여러개의 처리실의 열린구멍수단을 거쳐서 처리실내의 분위기에 노출시켜서 반도체장치의 기능을 처리하여 부가하고, 다시 다른 처리실의 열린구멍수단을 거쳐서 처리실내의 분위기에 노출시켜서 반도체장치의 기능을 처리하여 부가하는 공정을 반복하도록 하였다.
이것에 의해서, 고순도의 불활성가스 분위기의 버퍼실내에서 여러개의 처리실의 열린구멍수단에 차동배기기구를 갖고 있으므로 게이트밸브개폐에 따른 배기나 압력설정의 시간을 필요로 하지 않고, 기판의 불필요한 산화나 오염 등을 방지해서 여러가지 반도체장치용의 기능을 부가하는 프로세스처리를 실행하므로 고스루풋으로 고성능의 능동기능을 갖는 반도체장치를 제조할 수 있어 제조코스트의 저감을 도모할 수 있다.

Description

반도체 제조장치 및 반도체장치의 제조방법과 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예의 장치의 평면단면 개략도, 제2도는 본 발명의 1실시예의 장치의 측면AOB단면 개략도, 제3도는 본 발명의 1실시예의 열린구멍수단의 정면단면 개략도, 제4도는 본 발명의 1실시예의 열린구멍수단의 정면단면 개략도, 제5도는 본 발명의 1실시예의 장치의 측면단면 개략도, 제6도는 본 발명의 1실시예의 장치의 평면단면 개략도.

Claims (10)

  1. 버퍼실을 거쳐서 연결된 여러개의 처리실, 상기 여러개의 처리실과 상기 버퍼실을 차동배기하는 것에 의해 상기 여러개의 처리실의 분위기와 상기 버퍼실의 분위기를 각각 독립적으로 유지하는 수단 및 상기 여러개의 처리실 및 상기 버퍼실 사이에 피처리물을 반송하기 위한 피처리물 반송수단을 갖는 것을 특징으로 하는 반도체 제조장치.
  2. 제1항에 있어서, 상기 버퍼실내를 불활성가스 분위기로 유지하는 수단을 갖는 것을 특징으로 하는 반도체 제조장치.
  3. 제1항에 있어서, 상기 여러개의 처리실중의 적어도 1개의 처리실은 하전입자선에 의해 상기 피처리물에 패턴묘화처리를 실행하는 처리실인 것을 특징으로 하는 반도체 제조장치.
  4. 제1항에 있어서, 상기 여러개의 처리실중의 적어도 1개의 처리실은 처리실내로 원하는 가스를 공급하는 수단 및 처리실내의 가스를 배기하는 수단을 갖는 것을 특징으로 하는 반도체 제조장치.
  5. 제1항에 있어서, 상기 여러개의 처리실중의 적어도 1개의 처리실은 원하는 가스를 여기해서 상기 피처리물로 공급하는 수단을 갖는 것을 특징으로 하는 반도체 제조장치.
  6. 제1항에 있어서, 상기 여러개의 처리실중의 적어도 1개의 처리실은 상기 피처리물의 표면을 에칭하는 수단을 갖는 것을 특징으로 하는 반도체 제조장치.
  7. 제1항에 있어서, 상기 여러개의 처리실중의 적어도 1개의 처리실은 상기 피처리물의 표면에 막을 형성하는 수단을 갖는 것을 특징으로 하는 반도체 제조장치.
  8. 버퍼실을 거쳐서 연결된 여러개의 처리실과 상기 버퍼실을 차동배기하는 것에 의해 상기 여러개의 처리실의 분위기와 상기 버퍼실의 분위기를 각각 독립적으로 유지하고, 상기 여러개의 처리실 및 상기 버퍼실 사이로 피처리물을 반송해서 상기 여러개의 처리실의 분위기에 상기 피처리물을 노출시키는 것에 의해서 상기 피처리물을 처리하는 것을 특징으로 하는 반도체장치의 제조방법.
  9. 제8항에 있어서, 상기 버퍼실내를 불활성가스 분위기로 유지하는 것을 특징으로 하는 반도체장치의 제조방법.
  10. 버퍼실을 거쳐서 연결된 여러개의 처리실과 상기 버퍼실을 차동배기하는 것에 의해서 상기 여러개의 처리실의 분위기와 상기 버퍼실의 분위기를 각각 독립적으로 유지하고, 상기 여러개의 처리실 및 상기 버퍼실 사이로 피처리물을 반송해서 상기 여러개의 처리실의 분위기에 상기 피처리물을 노출시키는 것에 의해서 제조되는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950004237A 1994-03-04 1995-03-02 반도체 제조 장치 및 반도체 장치의 제조 방법과 반도체 장치 KR100329287B1 (ko)

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JP94-034406 1994-03-04
JP6034406A JPH07245332A (ja) 1994-03-04 1994-03-04 半導体製造装置および半導体装置の製造方法ならびに半導体装置
JP94-34406 1994-03-04

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Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US6200389B1 (en) 1994-07-18 2001-03-13 Silicon Valley Group Thermal Systems Llc Single body injector and deposition chamber
DE19549045C1 (de) * 1995-12-28 1997-06-05 Jenoptik Jena Gmbh Einrichtung zur Handhabung von scheibenförmigen Objekten
US5863170A (en) * 1996-04-16 1999-01-26 Gasonics International Modular process system
US5855465A (en) * 1996-04-16 1999-01-05 Gasonics International Semiconductor wafer processing carousel
US6078845A (en) * 1996-11-25 2000-06-20 Schlumberger Technologies, Inc. Apparatus for carrying semiconductor devices
EP0856594B1 (de) * 1997-01-07 2001-06-13 Siegfried Dr. Strämke Vorrichtung zur Plasma-Oberflächenbehandlung von Werkstücken
US5893795A (en) * 1997-07-11 1999-04-13 Applied Materials, Inc. Apparatus for moving a cassette
US6235634B1 (en) * 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
JPH11195695A (ja) * 1997-12-26 1999-07-21 Advanced Display Inc 電子デバイス製造装置
US6045299A (en) * 1998-04-13 2000-04-04 International Business Machines Corp. Unidirectional gate between interconnecting fluid transport regions
US6517303B1 (en) 1998-05-20 2003-02-11 Applied Komatsu Technology, Inc. Substrate transfer shuttle
JP2000021727A (ja) * 1998-07-01 2000-01-21 Asahi Optical Co Ltd 半導体回路形成装置
US6183564B1 (en) * 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
US6350321B1 (en) * 1998-12-08 2002-02-26 International Business Machines Corporation UHV horizontal hot wall cluster CVD/growth design
US20050229725A1 (en) * 1999-01-17 2005-10-20 Nova Measuring Instruments Ltd. Buffer system for a wafer handling system
US6358128B1 (en) * 1999-03-05 2002-03-19 Ebara Corporation Polishing apparatus
WO2000057456A1 (en) * 1999-03-19 2000-09-28 Electron Vision Corporation Cluster tool for wafer processing having an electron beam exposure module
FI118474B (fi) * 1999-12-28 2007-11-30 Asm Int Laite ohutkalvojen valmistamiseksi
FI118343B (fi) 1999-12-28 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
WO2002021583A1 (fr) * 2000-09-06 2002-03-14 Nikon Corporation Aligneur et procede de fabrication de dispositif
WO2002040980A1 (fr) * 2000-11-17 2002-05-23 Ebara Corporation Procede et instrument d'inspection de tranches, et appareil a faisceau electronique
US7095022B2 (en) * 2000-12-12 2006-08-22 Ebara Corporation Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
JP2007019033A (ja) * 2001-01-10 2007-01-25 Ebara Corp 電子線による検査装置、検査方法、及びその検査装置を用いたデバイス製造方法
US6516243B2 (en) * 2001-01-16 2003-02-04 Taiwan Semiconductor Manufacturing Co., Ltd Stocker apparatus affording manual access
JP2007281492A (ja) * 2001-11-02 2007-10-25 Ebara Corp 半導体製造装置
US6838393B2 (en) * 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US7091137B2 (en) * 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US7056560B2 (en) * 2002-05-08 2006-06-06 Applies Materials Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
US20040101632A1 (en) * 2002-11-22 2004-05-27 Applied Materials, Inc. Method for curing low dielectric constant film by electron beam
US20040007325A1 (en) * 2002-06-11 2004-01-15 Applied Materials, Inc. Integrated equipment set for forming a low K dielectric interconnect on a substrate
US20040206621A1 (en) * 2002-06-11 2004-10-21 Hongwen Li Integrated equipment set for forming a low K dielectric interconnect on a substrate
US7749563B2 (en) * 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
US6790788B2 (en) * 2003-01-13 2004-09-14 Applied Materials Inc. Method of improving stability in low k barrier layers
TWI290901B (en) * 2003-06-23 2007-12-11 Au Optronics Corp Warehousing conveyor system
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US20050233555A1 (en) * 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US20050277302A1 (en) * 2004-05-28 2005-12-15 Nguyen Son V Advanced low dielectric constant barrier layers
US7229041B2 (en) * 2004-06-30 2007-06-12 Ohio Central Steel Company Lifting lid crusher
US7288205B2 (en) * 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
US7531816B2 (en) * 2005-08-02 2009-05-12 Hitachi High-Technologies Corporation Vacuum conveying apparatus and charged particle beam equipment with the same
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
US7297376B1 (en) 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
US7774082B2 (en) * 2006-10-05 2010-08-10 Tokyo Electron Limited Substrate processing method and storage medium having program stored therein
US20080276867A1 (en) * 2007-05-09 2008-11-13 Jason Schaller Transfer chamber with vacuum extension for shutter disks
WO2008141106A1 (en) * 2007-05-09 2008-11-20 Applied Materials, Inc. Transfer chamber with vacuum extension for shutter disks
US9177843B2 (en) * 2007-06-06 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Preventing contamination in integrated circuit manufacturing lines
TWI580814B (zh) * 2010-10-21 2017-05-01 荏原製作所股份有限公司 基板處理裝置，以及鍍覆裝置及鍍覆方法
JP5750327B2 (ja) * 2010-10-21 2015-07-22 株式会社荏原製作所 めっき装置、めっき処理方法及びめっき装置用基板ホルダの姿勢変換方法
US9997384B2 (en) * 2011-12-01 2018-06-12 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for transporting wafers between wafer holders and chambers
WO2015171335A1 (en) * 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
US9879341B2 (en) * 2015-06-22 2018-01-30 Applied Materials, Inc. Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materials

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106510B1 (en) * 1982-10-19 1991-11-13 Varian Associates, Inc. Envelope apparatus for localized vacuum processing
JPS6066422A (ja) * 1983-09-21 1985-04-16 Kanegafuchi Chem Ind Co Ltd 半導体製造法
US4825806A (en) * 1984-02-17 1989-05-02 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Film forming apparatus
US5259881A (en) * 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
CA1331163C (en) * 1986-04-18 1994-08-02 Applied Materials, Inc. Multiple-processing and contamination-free plasma etching system
US5292393A (en) * 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPH07519B2 (ja) * 1987-06-15 1995-01-11 日新電機株式会社 分子線エピタキシ−装置
US5016562A (en) * 1988-04-27 1991-05-21 Glasstech Solar, Inc. Modular continuous vapor deposition system
US5076205A (en) * 1989-01-06 1991-12-31 General Signal Corporation Modular vapor processor system
JP2691007B2 (ja) * 1989-03-20 1997-12-17 株式会社日立製作所 真空連続処理装置
JP3271140B2 (ja) * 1990-03-30 2002-04-02 ソニー株式会社 連続処理装置および連続処理方法
JP2849458B2 (ja) * 1990-07-03 1999-01-20 キヤノン株式会社 半導体装置の製造方法および製造装置
JPH0465823A (ja) * 1990-07-06 1992-03-02 Oki Electric Ind Co Ltd 半導体素子の製造方法および製造装置
US5286296A (en) * 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
JP2598353B2 (ja) * 1991-12-04 1997-04-09 アネルバ株式会社 基板処理装置、基板搬送装置及び基板交換方法
US5486080A (en) * 1994-06-30 1996-01-23 Diamond Semiconductor Group, Inc. High speed movement of workpieces in vacuum processing

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