KR950029233A - 질화규소계 세라믹부품의 제조방법 - Google Patents

질화규소계 세라믹부품의 제조방법 Download PDF

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KR950029233A
KR950029233A KR1019950009734A KR19950009734A KR950029233A KR 950029233 A KR950029233 A KR 950029233A KR 1019950009734 A KR1019950009734 A KR 1019950009734A KR 19950009734 A KR19950009734 A KR 19950009734A KR 950029233 A KR950029233 A KR 950029233A
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heat treatment
residual stress
silicon nitride
heating
nitride ceramic
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KR1019950009734A
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KR0138018B1 (ko
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야수시 이토
타케히사 야마모토
타카오 니시오카
아키라 야마카와
오사무 코무라
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쿠라우찌 노리타카
스미도모덴기고오교오 가부시기가이샤
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Abstract

본 발명은, 평균입경이 0.5이하㎛인 αㅡSi3N4와, 평균입경이 장축해서 3㎛이하이고, 단축에서 1㎛ 이하인 β′ㅡ사이아론으로 이루어지는 질화규소소결체를 표면의 10점평균조도가 1∼7㎛가 되도록 소정크기로 연삭가공하고; 이어서 대기중 800 ∼1200℃의 온도범위에서 가열처리한 후 방치하여 냉각함으로서, 가열처리전후의 연삭가공면의 잔류응력이 압축잔류응력이고, 압축잔류응력의 가열처리전에 대한 가열처리후의 비(가열처리후 압축잔류응력/가열처리전압축잔류응력)를 1이상, 바람직하게는 5이상으로 하는 것을 특징으로 하는 질화규소 세라믹부품의 제조방법을 제공하는 것이다.

Description

질화규소계 세라믹부품의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. 평균입경이 0.5㎛이하인 αㅡSi3N4와, 평균입경이 장축에서 3㎛이하이고, 단축에서 1㎛ 이하인 β′ㅡ사이아론으로 이루어지는 질화규소소결체를 표면의 10점평균조도가 1∼7㎛ 가 되도록 소정크기로 연삭가공하고; 이어서 대기중 800∼1200℃의 온도범위에서 가열처리한 후 방치하여 냉각함으로서, 가열처리전후의 연삭가공면의 잔류응력이 압축잔류응력이고, 압축잔류응력의 가열처리전에 대한 가열처리후의 비(가열처리후 압축잔류응력/가열처리전압축잔류응력)를 1이상으로 하는 것을 특징으로 하는 질화규소세라믹부품의 제조방법.
  2. 제1항에 있어서, 가열처리는 15분∼5시간 행하는 것을 특징으로 하는 질화규소세라믹부품의 제조방법.
  3. 제1항 또는 제2항에 있어서, 잔류압축응력의 가열처리전에 대한 가열처리후의 비(가열처리후 압축잔류응력/가열처리전압축잔류응력)는 5이상인 것을 특징으로 하는 질화규소세라믹부품의 제조방법.
  4. 제1항 내지 제3항중의 어느 한 항에 있어서, 상기 질화규소소결체의 제조에 사용된 소결조제는, Y2O2, Al2O3및 AIN으로 이루어지는 필수소결조제와, MgO, TiO2, ZrO2, HfO2등의 산화물 및 MgAl2O4등의 복합산화물에서 선택된 적어도 1종의 소결조제로 이루어지는 것을 특징으로 하는 질화규소세라믹부품의 제조방법.
  5. 제1항 내지 제4항의 어느 한 항에 있어서, 질화규소세라믹부품의 강도의 가열처리전에 대한 가열처리후의 비(가열후강도/가열전강도)가 1.2이상인 것을 특징으로 하는 질화규소세라믹부품의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019950009734A 1994-04-26 1995-04-25 질화규소계 세라믹부품의 제조방법 KR0138018B1 (ko)

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JP94-109113 1994-04-26
JP6109113A JPH07299708A (ja) 1994-04-26 1994-04-26 窒化ケイ素系セラミックス部品の製造方法

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KR950029233A true KR950029233A (ko) 1995-11-22
KR0138018B1 KR0138018B1 (ko) 1998-04-27

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US (1) US5599493A (ko)
EP (1) EP0679616B1 (ko)
JP (1) JPH07299708A (ko)
KR (1) KR0138018B1 (ko)
DE (1) DE69501638T2 (ko)
TW (1) TW284747B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR100833962B1 (ko) * 2000-09-20 2008-05-30 히다찌긴조꾸가부시끼가이사 질화규소 분말, 질화규소 소결체, 질화규소 소결체 기판,및 그 질화규소 소결체 기판을 포함한 회로기판 및열전소자 모듈

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KR100836150B1 (ko) * 2000-09-20 2008-06-09 히다찌긴조꾸가부시끼가이사 질화규소 소결체, 질화규소 소결체의 제조 방법 및 질화규소 소결체 기판, 이러한 질화 규소 소결체 기판을 포함하는 회로 기판

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DE69501638D1 (de) 1998-04-02
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