KR950025990A - 전자회로 디바이스 - Google Patents
전자회로 디바이스 Download PDFInfo
- Publication number
- KR950025990A KR950025990A KR1019950001988A KR19950001988A KR950025990A KR 950025990 A KR950025990 A KR 950025990A KR 1019950001988 A KR1019950001988 A KR 1019950001988A KR 19950001988 A KR19950001988 A KR 19950001988A KR 950025990 A KR950025990 A KR 950025990A
- Authority
- KR
- South Korea
- Prior art keywords
- conductors
- electronic circuit
- circuit device
- conductor
- metal
- Prior art date
Links
- 239000004020 conductor Substances 0.000 claims abstract 31
- 239000000463 material Substances 0.000 claims abstract 4
- 239000012212 insulator Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 239000011159 matrix material Substances 0.000 claims 7
- 150000004767 nitrides Chemical class 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 150000002736 metal compounds Chemical class 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP94-12664 | 1994-02-04 | ||
| JP1266494 | 1994-02-04 | ||
| JP1601895A JPH07263647A (ja) | 1994-02-04 | 1995-02-02 | 電子回路装置 |
| JP95-16018 | 1995-02-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950025990A true KR950025990A (ko) | 1995-09-18 |
Family
ID=26348302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950001988A KR950025990A (ko) | 1994-02-04 | 1995-02-04 | 전자회로 디바이스 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5994757A (de) |
| EP (1) | EP0666593B1 (de) |
| JP (1) | JPH07263647A (de) |
| KR (1) | KR950025990A (de) |
| DE (1) | DE69513058T2 (de) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5825609A (en) * | 1996-04-23 | 1998-10-20 | International Business Machines Corporation | Compound electrode stack capacitor |
| US6458645B2 (en) * | 1998-02-26 | 2002-10-01 | Micron Technology, Inc. | Capacitor having tantalum oxynitride film and method for making same |
| US6265746B1 (en) * | 1998-05-28 | 2001-07-24 | Altera Corporation | Highly resistive interconnects |
| US6034882A (en) * | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
| US7157314B2 (en) | 1998-11-16 | 2007-01-02 | Sandisk Corporation | Vertically stacked field programmable nonvolatile memory and method of fabrication |
| GB2355113B (en) * | 1999-06-25 | 2004-05-26 | Hyundai Electronics Ind | Method of manufacturing capacitor for semiconductor memory device |
| EP1139419A1 (de) * | 2000-03-29 | 2001-10-04 | STMicroelectronics S.r.l. | Herstellungsverfahren eines elektrisch programmierbaren Festwertspeichers mit Logikschaltung |
| US8575719B2 (en) | 2000-04-28 | 2013-11-05 | Sandisk 3D Llc | Silicon nitride antifuse for use in diode-antifuse memory arrays |
| JP3846202B2 (ja) * | 2001-02-02 | 2006-11-15 | ソニー株式会社 | 半導体不揮発性記憶装置 |
| US6535418B2 (en) * | 2001-07-24 | 2003-03-18 | Hewlett-Packard Development Company, Llp | Optically programmable address logic for solid state diode-based memory |
| US6853049B2 (en) * | 2002-03-13 | 2005-02-08 | Matrix Semiconductor, Inc. | Silicide-silicon oxide-semiconductor antifuse device and method of making |
| US7132350B2 (en) * | 2003-07-21 | 2006-11-07 | Macronix International Co., Ltd. | Method for manufacturing a programmable eraseless memory |
| US20050035429A1 (en) * | 2003-08-15 | 2005-02-17 | Yeh Chih Chieh | Programmable eraseless memory |
| JP5015420B2 (ja) * | 2003-08-15 | 2012-08-29 | 旺宏電子股▲ふん▼有限公司 | プログラマブル消去不要メモリに対するプログラミング方法 |
| KR100657911B1 (ko) * | 2004-11-10 | 2006-12-14 | 삼성전자주식회사 | 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자 |
| US20070069241A1 (en) | 2005-07-01 | 2007-03-29 | Matrix Semiconductor, Inc. | Memory with high dielectric constant antifuses and method for using at low voltage |
| JP5044902B2 (ja) * | 2005-08-01 | 2012-10-10 | 日立電線株式会社 | 圧電薄膜素子 |
| US7768815B2 (en) * | 2005-08-23 | 2010-08-03 | International Business Machines Corporation | Optoelectronic memory devices |
| US7372753B1 (en) * | 2006-10-19 | 2008-05-13 | Unity Semiconductor Corporation | Two-cycle sensing in a two-terminal memory array having leakage current |
| US7782651B2 (en) | 2006-10-24 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including storage device and method for driving the same |
| JP5214213B2 (ja) * | 2006-10-24 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 記憶装置の駆動方法 |
| JP4527170B2 (ja) | 2006-11-17 | 2010-08-18 | パナソニック株式会社 | 不揮発性記憶素子、不揮発性記憶装置、不揮発性半導体装置、および不揮発性記憶素子の製造方法 |
| WO2008126365A1 (ja) | 2007-03-29 | 2008-10-23 | Panasonic Corporation | 不揮発性記憶装置、不揮発性記憶素子および不揮発性記憶素子アレイ |
| JP5526776B2 (ja) | 2007-04-17 | 2014-06-18 | 日本電気株式会社 | 抵抗変化素子及び該抵抗変化素子を含む半導体装置 |
| JP4410272B2 (ja) | 2007-05-11 | 2010-02-03 | 株式会社東芝 | 不揮発性メモリ装置及びそのデータ書き込み方法 |
| WO2008146461A1 (ja) * | 2007-05-18 | 2008-12-04 | Panasonic Corporation | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 |
| CN101542730B (zh) | 2007-06-05 | 2011-04-06 | 松下电器产业株式会社 | 非易失性存储元件和其制造方法、以及使用了该非易失性存储元件的非易失性半导体装置 |
| KR20090026580A (ko) * | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 저항 메모리 소자 및 그 형성방법 |
| WO2009063645A1 (ja) * | 2007-11-15 | 2009-05-22 | Panasonic Corporation | 不揮発性記憶装置およびその製造方法 |
| JP2009135219A (ja) * | 2007-11-29 | 2009-06-18 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US7872934B2 (en) * | 2007-12-14 | 2011-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for writing data into memory |
| JP5371400B2 (ja) * | 2007-12-14 | 2013-12-18 | 株式会社半導体エネルギー研究所 | メモリ及び半導体装置 |
| JP5049814B2 (ja) * | 2008-02-14 | 2012-10-17 | 株式会社東芝 | 不揮発性半導体記憶装置のデータ書き込み方法 |
| US20110096595A1 (en) * | 2008-06-20 | 2011-04-28 | Masayuki Terai | Semiconductor memory device and operation method thereof |
| US8264865B2 (en) | 2008-07-11 | 2012-09-11 | Panasonic Corporation | Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element |
| JP4607257B2 (ja) | 2008-12-04 | 2011-01-05 | パナソニック株式会社 | 不揮発性記憶素子及び不揮発性記憶装置 |
| JP5671413B2 (ja) * | 2011-06-07 | 2015-02-18 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| US10128184B2 (en) * | 2015-07-01 | 2018-11-13 | Zhuhai Chuangfeixin Technology Co., Ltd. | Antifuse structure in via hole in interplayer dielectric |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
| JPS6249651A (ja) * | 1985-06-25 | 1987-03-04 | テキサス インスツルメンツインコ−ポレイテツド | アンチヒユ−ズ、その製法、電気的にプログラム可能なメモリ・セル、メモリ・セルをプログラムする方法 |
| JPS6258673A (ja) * | 1985-09-09 | 1987-03-14 | Fujitsu Ltd | 半導体記憶装置 |
| US5070384A (en) * | 1990-04-12 | 1991-12-03 | Actel Corporation | Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer |
| US5331197A (en) * | 1991-04-23 | 1994-07-19 | Canon Kabushiki Kaisha | Semiconductor memory device including gate electrode sandwiching a channel region |
| US5233206A (en) * | 1991-11-13 | 1993-08-03 | Micron Technology, Inc. | Double digitlines for multiple programming of prom applications and other anti-fuse circuit element applications |
| EP0564138A1 (de) * | 1992-03-31 | 1993-10-06 | STMicroelectronics, Inc. | Feldprogrammierbare Vorrichtung |
| US5248632A (en) * | 1992-09-29 | 1993-09-28 | Texas Instruments Incorporated | Method of forming an antifuse |
| US5521423A (en) * | 1993-04-19 | 1996-05-28 | Kawasaki Steel Corporation | Dielectric structure for anti-fuse programming element |
-
1995
- 1995-02-02 JP JP1601895A patent/JPH07263647A/ja active Pending
- 1995-02-03 US US08/383,186 patent/US5994757A/en not_active Expired - Fee Related
- 1995-02-04 KR KR1019950001988A patent/KR950025990A/ko active Search and Examination
- 1995-02-06 EP EP95101565A patent/EP0666593B1/de not_active Expired - Lifetime
- 1995-02-06 DE DE69513058T patent/DE69513058T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69513058T2 (de) | 2000-04-20 |
| JPH07263647A (ja) | 1995-10-13 |
| DE69513058D1 (de) | 1999-12-09 |
| US5994757A (en) | 1999-11-30 |
| EP0666593A1 (de) | 1995-08-09 |
| EP0666593B1 (de) | 1999-11-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| J201 | Request for trial against refusal decision | ||
| AMND | Amendment | ||
| B601 | Maintenance of original decision after re-examination before a trial | ||
| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 19990918 Effective date: 20000831 |