DE69513058D1 - Elektronische Schaltungsanordnung - Google Patents

Elektronische Schaltungsanordnung

Info

Publication number
DE69513058D1
DE69513058D1 DE69513058T DE69513058T DE69513058D1 DE 69513058 D1 DE69513058 D1 DE 69513058D1 DE 69513058 T DE69513058 T DE 69513058T DE 69513058 T DE69513058 T DE 69513058T DE 69513058 D1 DE69513058 D1 DE 69513058D1
Authority
DE
Germany
Prior art keywords
electronic circuitry
circuitry
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69513058T
Other languages
English (en)
Other versions
DE69513058T2 (de
Inventor
Takeshi Ichikawa
Mamoru Miyawaki
Shunsuke Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69513058D1 publication Critical patent/DE69513058D1/de
Publication of DE69513058T2 publication Critical patent/DE69513058T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
DE69513058T 1994-02-04 1995-02-06 Elektronische Schaltungsanordnung Expired - Fee Related DE69513058T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1266494 1994-02-04
JP1601895A JPH07263647A (ja) 1994-02-04 1995-02-02 電子回路装置

Publications (2)

Publication Number Publication Date
DE69513058D1 true DE69513058D1 (de) 1999-12-09
DE69513058T2 DE69513058T2 (de) 2000-04-20

Family

ID=26348302

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513058T Expired - Fee Related DE69513058T2 (de) 1994-02-04 1995-02-06 Elektronische Schaltungsanordnung

Country Status (5)

Country Link
US (1) US5994757A (de)
EP (1) EP0666593B1 (de)
JP (1) JPH07263647A (de)
KR (1) KR950025990A (de)
DE (1) DE69513058T2 (de)

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US5825609A (en) * 1996-04-23 1998-10-20 International Business Machines Corporation Compound electrode stack capacitor
US6458645B2 (en) * 1998-02-26 2002-10-01 Micron Technology, Inc. Capacitor having tantalum oxynitride film and method for making same
US6265746B1 (en) * 1998-05-28 2001-07-24 Altera Corporation Highly resistive interconnects
US6483736B2 (en) 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
GB2355113B (en) * 1999-06-25 2004-05-26 Hyundai Electronics Ind Method of manufacturing capacitor for semiconductor memory device
EP1139419A1 (de) * 2000-03-29 2001-10-04 STMicroelectronics S.r.l. Herstellungsverfahren eines elektrisch programmierbaren Festwertspeichers mit Logikschaltung
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
JP3846202B2 (ja) * 2001-02-02 2006-11-15 ソニー株式会社 半導体不揮発性記憶装置
US6535418B2 (en) * 2001-07-24 2003-03-18 Hewlett-Packard Development Company, Llp Optically programmable address logic for solid state diode-based memory
US6853049B2 (en) * 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US20050035429A1 (en) * 2003-08-15 2005-02-17 Yeh Chih Chieh Programmable eraseless memory
US7132350B2 (en) * 2003-07-21 2006-11-07 Macronix International Co., Ltd. Method for manufacturing a programmable eraseless memory
JP5015420B2 (ja) * 2003-08-15 2012-08-29 旺宏電子股▲ふん▼有限公司 プログラマブル消去不要メモリに対するプログラミング方法
KR100657911B1 (ko) 2004-11-10 2006-12-14 삼성전자주식회사 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자
US20070069241A1 (en) * 2005-07-01 2007-03-29 Matrix Semiconductor, Inc. Memory with high dielectric constant antifuses and method for using at low voltage
JP5044902B2 (ja) * 2005-08-01 2012-10-10 日立電線株式会社 圧電薄膜素子
US7768815B2 (en) * 2005-08-23 2010-08-03 International Business Machines Corporation Optoelectronic memory devices
US7372753B1 (en) * 2006-10-19 2008-05-13 Unity Semiconductor Corporation Two-cycle sensing in a two-terminal memory array having leakage current
EP2076923B1 (de) 2006-10-24 2012-08-15 Semiconductor Energy Laboratory Co, Ltd. Halbleiteranordnung mit einer speicheranordnung und verfahren zu ihrer ansteuerung
JP5214213B2 (ja) * 2006-10-24 2013-06-19 株式会社半導体エネルギー研究所 記憶装置の駆動方法
CN101636840B (zh) 2006-11-17 2011-05-25 松下电器产业株式会社 非易失性存储元件、非易失性存储器件、非易失性半导体器件以及非易失性存储元件的制造方法
US8058636B2 (en) 2007-03-29 2011-11-15 Panasonic Corporation Variable resistance nonvolatile memory apparatus
JP5526776B2 (ja) 2007-04-17 2014-06-18 日本電気株式会社 抵抗変化素子及び該抵抗変化素子を含む半導体装置
JP4410272B2 (ja) 2007-05-11 2010-02-03 株式会社東芝 不揮発性メモリ装置及びそのデータ書き込み方法
JP4299882B2 (ja) 2007-05-18 2009-07-22 パナソニック株式会社 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
WO2008149484A1 (ja) 2007-06-05 2008-12-11 Panasonic Corporation 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
KR20090026580A (ko) * 2007-09-10 2009-03-13 삼성전자주식회사 저항 메모리 소자 및 그 형성방법
CN101861649B (zh) * 2007-11-15 2012-10-31 松下电器产业株式会社 非易失性存储装置及其制造方法
JP2009135219A (ja) * 2007-11-29 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
US7872934B2 (en) * 2007-12-14 2011-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for writing data into memory
JP5049814B2 (ja) * 2008-02-14 2012-10-17 株式会社東芝 不揮発性半導体記憶装置のデータ書き込み方法
JP5488463B2 (ja) * 2008-06-20 2014-05-14 日本電気株式会社 半導体記憶装置及びその動作方法
JP4469023B2 (ja) 2008-07-11 2010-05-26 パナソニック株式会社 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
JP4607257B2 (ja) 2008-12-04 2011-01-05 パナソニック株式会社 不揮発性記憶素子及び不揮発性記憶装置
JP5671413B2 (ja) * 2011-06-07 2015-02-18 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びその製造方法
US10128184B2 (en) * 2015-07-01 2018-11-13 Zhuhai Chuangfeixin Technology Co., Ltd. Antifuse structure in via hole in interplayer dielectric

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
JPS6249651A (ja) * 1985-06-25 1987-03-04 テキサス　インスツルメンツインコ−ポレイテツド アンチヒユ−ズ、その製法、電気的にプログラム可能なメモリ・セル、メモリ・セルをプログラムする方法
JPS6258673A (ja) * 1985-09-09 1987-03-14 Fujitsu Ltd 半導体記憶装置
US5070384A (en) * 1990-04-12 1991-12-03 Actel Corporation Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer
US5331197A (en) * 1991-04-23 1994-07-19 Canon Kabushiki Kaisha Semiconductor memory device including gate electrode sandwiching a channel region
US5233206A (en) * 1991-11-13 1993-08-03 Micron Technology, Inc. Double digitlines for multiple programming of prom applications and other anti-fuse circuit element applications
EP0564138A1 (de) * 1992-03-31 1993-10-06 STMicroelectronics, Inc. Feldprogrammierbare Vorrichtung
US5248632A (en) * 1992-09-29 1993-09-28 Texas Instruments Incorporated Method of forming an antifuse
US5521423A (en) * 1993-04-19 1996-05-28 Kawasaki Steel Corporation Dielectric structure for anti-fuse programming element

Also Published As

Publication number Publication date
KR950025990A (ko) 1995-09-18
DE69513058T2 (de) 2000-04-20
JPH07263647A (ja) 1995-10-13
US5994757A (en) 1999-11-30
EP0666593A1 (de) 1995-08-09
EP0666593B1 (de) 1999-11-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee