KR950004374A - 위상쉬프트 포토마스크용 블랭크 및 위상쉬프트 포토마스크 - Google Patents

위상쉬프트 포토마스크용 블랭크 및 위상쉬프트 포토마스크 Download PDF

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Publication number
KR950004374A
KR950004374A KR1019940017146A KR19940017146A KR950004374A KR 950004374 A KR950004374 A KR 950004374A KR 1019940017146 A KR1019940017146 A KR 1019940017146A KR 19940017146 A KR19940017146 A KR 19940017146A KR 950004374 A KR950004374 A KR 950004374A
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KR
South Korea
Prior art keywords
phase shift
shift photomask
layer
stopper layer
blank
Prior art date
Application number
KR1019940017146A
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English (en)
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KR100286445B1 (ko
Inventor
모리히로시
마사히로 다까하시
지로 다께이
사찌꼬 이시기따
히로유끼 미야시따
Original Assignee
기따지마 요시도시
다이니쁜인사쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 기따지마 요시도시, 다이니쁜인사쯔 가부시끼가이샤 filed Critical 기따지마 요시도시
Publication of KR950004374A publication Critical patent/KR950004374A/ko
Application granted granted Critical
Publication of KR100286445B1 publication Critical patent/KR100286445B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 자외선노광광에 대하여 투과성이 있고 충분한 에칭내성을 가지며 약액, 산등에 대하여 충분한 내성을 지닌 에칭 스톱퍼층을 구비하여 위상쉬프트각의 고정밀도제어가 가능한 위상쉬프트 포토마스크로서, 투명기판(201)상에 기판측부터 순서대로 에칭 스톱퍼층(202)과 적어도 위상쉬프터패턴(204)이 적층되어서 된 위상쉬프트 포토마스크에 있어서, 에칭 스톱퍼층(202)이 산화하프늄을 주체로 하는 층에 의하여 구성되어 있다.

Description

위상쉬프트 포토마스크용 블랭크 및 위상쉬프트 포토마스크
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의거한 산화하프늄막이 부착된 고순도합성석영의 분광투과율을 측정한 결과를 나타낸 도면.

Claims (2)

  1. 투명기판상에 설치된 위상쉬프터층의 드라이에칭을 위한 에칭 스톱퍼층을 투명기판과 위상쉬프터층사이에 구비한 위상쉬프트 포토마스크용 블랭크에 있어서, 상기 에칭 스톱퍼층이 산화하프늄을 주체로 하는 층에 의하여 구성되어 있는 것을 특징으로 하는 위상쉬프트 포토마스크용 블랭크.
  2. 투명기판상에 기판측부터 순서대로 에칭 스톱퍼층과 적어도 위상쉬프터패턴이 적층되어서 된 위상쉬프트 포토마스크에 있어서, 상기 에칭 스톱퍼층이 산화하프늄을 주체로 하는 층에 의하여 구성되어 있는 것을 특징으로 하는 위상쉬프트 포토마스크.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940017146A 1993-07-20 1994-07-15 위상쉬프트 포토마스크용 블랭크 및 위상쉬프트 포토마스크 KR100286445B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-179259 1993-07-20
JP17925993A JP3301556B2 (ja) 1993-07-20 1993-07-20 位相シフトフォトマスク用ブランク及び位相シフトフォトマスク

Publications (2)

Publication Number Publication Date
KR950004374A true KR950004374A (ko) 1995-02-17
KR100286445B1 KR100286445B1 (ko) 2001-04-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940017146A KR100286445B1 (ko) 1993-07-20 1994-07-15 위상쉬프트 포토마스크용 블랭크 및 위상쉬프트 포토마스크

Country Status (3)

Country Link
US (1) US5561009A (ko)
JP (1) JP3301556B2 (ko)
KR (1) KR100286445B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1892418B (zh) * 2005-07-01 2010-06-09 联华电子股份有限公司 检验相移光掩模的相移角的方法、光刻工艺与相移光掩模
JP6759486B2 (ja) 2018-02-27 2020-09-23 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
SG11202007994YA (en) 2018-03-14 2020-09-29 Hoya Corp Mask blank, phase shift mask, and method of manufacturing semiconductor device
WO2020066590A1 (ja) * 2018-09-25 2020-04-02 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP6821865B2 (ja) 2018-09-27 2021-01-27 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
EP4106618A4 (en) 2020-02-19 2024-04-24 Thermo Electron Scientific Instruments LLC PHASE MASK FOR STRUCTURED LIGHTING
JP7380522B2 (ja) * 2020-10-30 2023-11-15 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法、及び位相シフトマスク
CN114449193A (zh) * 2020-10-30 2022-05-06 三星电子株式会社 包括分色透镜阵列的图像传感器和包括该图像传感器的电子装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4440841A (en) * 1981-02-28 1984-04-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
US5380608A (en) * 1991-11-12 1995-01-10 Dai Nippon Printing Co., Ltd. Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide
US5254202A (en) * 1992-04-07 1993-10-19 International Business Machines Corporation Fabrication of laser ablation masks by wet etching

Also Published As

Publication number Publication date
JP3301556B2 (ja) 2002-07-15
US5561009A (en) 1996-10-01
KR100286445B1 (ko) 2001-04-16
JPH0736176A (ja) 1995-02-07

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