KR950000097B1 - 와이어본딩 방법 - Google Patents

와이어본딩 방법 Download PDF

Info

Publication number
KR950000097B1
KR950000097B1 KR1019910002890A KR910002890A KR950000097B1 KR 950000097 B1 KR950000097 B1 KR 950000097B1 KR 1019910002890 A KR1019910002890 A KR 1019910002890A KR 910002890 A KR910002890 A KR 910002890A KR 950000097 B1 KR950000097 B1 KR 950000097B1
Authority
KR
South Korea
Prior art keywords
gold wire
wire
ultrasonic vibration
electrode
ultrasonic
Prior art date
Application number
KR1019910002890A
Other languages
English (en)
Other versions
KR920000118A (ko
Inventor
야스히코 시미즈
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR920000118A publication Critical patent/KR920000118A/ko
Application granted granted Critical
Publication of KR950000097B1 publication Critical patent/KR950000097B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85206—Direction of oscillation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20303—Ultrasonic frequency [f] 50 Khz=<f< 75 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/904—Wire bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

내용 없음.

Description

와이어본딩 방법
제 1 도는 본 발명에 따른 와이어본딩의 시퀀스도.
제 2 도는 본 발명에 사용되는 와이어본딩장치의 개관도.
제 3 도는 와이어본딩의 개관도.
제 4 도는 종래의 와이어본딩의 시퀀스도.
제 5 도는 금선과 전극의 초기접촉도.
제 6 도는 금선이 찌부러진 후의 전극과의 접촉도이다.
* 도면의 주요부분에 대한 부호의 설명
16 : 혼(horn) 18 : 초음파발진기
21 : 캐피럴리 22 : 금선(金線)
23 : 시료대 24 : 리드프레임
25 : 반도체칩 26 : 반도체칩의 전극
[산업상의 이용분야]
본 발명은 반도체 장치의 칩과 리드를 접합시키는 와이어본딩방법에 관한 것이다.
[종래의 기술 및 그 문제점]
와이어본딩장치는 제 3 도에 도시된 바와 같이 반도체칩(25)상의 전극(26)과 리드프레임(24)상의 내부리드를 가는 금속선[이하, 금선(金線)으로 설명한다]으로 접속시키는 것이다.
제 2 도에 그 와이어본딩장치의 개관을 나타냈다.
먼저, 기구동작에 대해 설명한다. 본딩헤드(2)는 X-Y테이블(1)의 구동에 의해 캐피럴리(21 ; capillary)의 선단을 칩(25)의 전극(26)과 리드프레임(24)의 내부리드간을 이동시킨다.
캐피럴리(21)의 Z방향 상하이동은 다음과 같이 실행된다. 회전판(7)에 부착된 모터(도시하지 않음)를 구동시킴으로써 축(6)을 중심으로 회전판(7)이 회전하여 핀(8)을 매개해서 틀(4)을 축(3)을 중심으로 상하이동시키게 된다. 혼(16 ; horn)은 스프링(12)과 선형 모터(14)의 추력(推力)에 의해 지지기구(11)를 매개해서 틀(4)의 스톱퍼(13)로 눌리어져 틀(4)의 상하이동과 일체로 동작하게 된다. 틀(4)의 회전중심과 혼(16)의 회전중심은 동일하게 축(3)으로 되어 있다. 회전판(7)의 모터구동에 의해 캐피럴리(21)가 Z방향 이동을 실행하게 되는 것이다.
다음으로, 금선(22) 접속의 시퀀스에 대해 설명한다. 초음파 혼(16)의 선단에 부착된 캐피럴리(21)를 통과한 금선(22)을 도시되지 않은 토치기구(torch 機構)에 의해 구형(球形)으로 하게 되는데, 토치기구는 토치와 금선(22)간에 고압전류를 방전시켜서 그 에너지로 금선(22)을 용융시켜 구형으로 하게 된다.
금선(22)을 구형으로 한 후, 제 4 도의 본딩시퀀스에 따라 금선(22)의 접합을 실행한다. 캐피럴리(21)는 X-Y테이블(1)의 구동에 의해 칩(25)의 전극(26)상으로 이동한 다음 제 4 도의 캐피럴리(21)의 Z변위 시퀀스에 따라 동작하게 되는바, 캐피럴리(21)를 칩(25)의 전극(26)과 리드프레임(24)의 내부리드간을 이동시켜 금선(22)의 루우프형태를 성형하게 된다.
다음에는 금선(22)의 접합에 대해 설명한다. 접합은 열압착과 초음파진동의 병용에 의해 실행된다.
제 4 도의 캐피럴리(21)의 Z변위에 나타낸 바와 같이, 캐피럴리(21)는 칩측으로 가장 빠른 스피드로 하강하다가 서어치 높이에 도달한 포인트에서 감속하고 그후 등속도운동을 하게 된다. 이 등속도운동에 의해 칩(25) 높이에 다소 오차가 나더라도 동일의 충격력으로 되도록 접합의 안정성을 도모할 수 있게 된다. 등속도로 충돌한 금선(22)은 제 5 도의 상태에서 스프링(12)과 선형 모터(14)에 의한 부하하중과 충격력에 의해 제 6 도에 나타낸 바와 같이 금선(22)이 찌부러지고, 그후 칩(25)에 부착되어 히터(도시하지 않음)의 열과 캐피럴리(21)의 압착력 및 초음파진동의 병용에 의해 금선(22)의 접착면에 합금층을 생성함으로써 접합이 완료되게 된다.
초음파진동은 제 2 도의 초음파발진기(18)에 의해 초음파진동자(17)를 발진시키고, 혼(16)으로 증폭한 다음 캐피럴리(21)로 진동을 전도하여 금선(22)을 가진(加振)한다. 금선과 리드에 대해서도 동일한 순서에 의해 접합이 실행된다.
금선의 접합은 상기한 바와 같이 초음파진동을 이용하지만, 초음파진동의 발진의 타이밍은 제 4 도의 초음파발진기(18)의 출력파형(1)에 나타내어진 바와 같이 금선(22)이 칩(25)에 접촉한 후에 인가되도록 되어 있었다.
금선(22)과 칩(25)의 접촉의 검출은 다음과같이 실행된다.
제 2 도에 있어서, 캐피럴리(21)가 하강하여 칩(25)상에 접촉하면 혼(16)의 상하운동이 정지된다. 그러나, 틀(4)은 모터에 의해 회전을 계속하기 때문에 혼(16)의 지지기구(11)와 틀(4)의 스톱퍼(13)간에 빈틈이 생기게 된다. 이 빈틈을 변위센서(19)로 검출하여 제 4 도의 변위센서(19)로부터 전압출력과 같이 빈틈에 대응하는 전압출력을 얻을 수 있게 되는데, 이 전압이 소정의 레벨을 초과하는 포인트에서 접촉검출을 실행하게 되는 것이다.
상기와 같이 접촉검출을 실행한 후, 지연시간(T4)후 초음파발진기(18)로부터 초음파진동이 T5시간 동안 금선에 인가되게 된다.
종래에는 상술한 바와 같은 방법에 의해 초음파진동이 금선에 인가되었지만, 반도체칩의 종류에 따라서는 전극면의 Al막이 보다 단단하고, 혹은 표면산화막이 보다 단단하고 두꺼우며, 또 전극면적이 작은 것이 있다.
전극면이 단단한 경우 확실하게 접합시키기 위해서는 보다 큰 초음파진동이 필요하게 되지만, 이 경우 제 6 도에 나타낸 금선(22)의 충돌에 의한 찌부러짐후의 면적이 지나치게 커지게 되어 단락사고나 접합불량 등 문제가 많았다.
이 문제의 해결법으로써 제 4 도의 초음파발진기(18)의 출력파형(2)과 같이 서어치높이로부터 초음파진공을 인가하고, 금선(22)이 칩(25)에 접촉하기 전부터 초음파진동을 인가하여 접합력을 향상시키는 수법이 있지만, 이 경우 제 5 도에 나타낸 바와 같이 금선(22)의 접촉면적이 작은 경우에도 찌부러진 상태에서의 최적의 진동을 인가하도록 되어 있기 때문에 접촉면에 과대한 초음파진동이 가해지게 되고, 그 결과 칩전극(26) 아래에 크랙(crack)이 발생하여 이것이 불량발생의 원인으로 되었다.
[발명의 목적]
본 발명은 상기한 점을 감안하여 발명된 것으로, 특히 칩전극면이 단단한 것이나 전극면적이 작은 반도체칩을 이용한 제품에 대응하여 양호한 와이어본딩방법을 제공하고자 함에 그 목적이 있다.
[발명의 구성]
상기한 목적을 달성하기 위한 본 발명의 와이어본딩방법은, 금선에 인가하는 초음파진동인가를 2단계로 하여 금선과 칩의 충돌전에 사전에 제 1 차 초음파진동을 인가하고, 이 제 1 차 초음파진동의 진폭은 전극아래에 크랙을 발생시키지 않는 레벨인 동시에 금선이 칩에 접촉한 상태에서의 최적의 진동으로 하며, 금선접촉시부터 접합을 진행시키고, 충돌후에는 금선의 찌부러진 면적에 적합한 제 2 차 초음파진동을 인가하는 것을 특징으로 하고 있다.
[작용]
상기와 같이 이루어진 본 발명은, 금선의 접촉면적에 따른 초음파진동을 인가할 수 있게 되고, 금선의 찌부러짐 직경을 증대시키지 않으면서 접합강도을 증가시킬 수 있게 된다.
[실시예]
이하, 본 발명의 실시예를 도면을 참조하여 상세히 설명한다.
제 1 도는 본 발명에 따른 와이어본딩 시퀀스를 나타낸 것이다. 캐피럴리(21)의 Z하강중의 서어치 높이의 등속도운동 개시점으로부터 변위 1μm정도 보다 작은 초음파진동(진폭 A1)을 인가한다. 이 진폭(A1)은 칩전극(26) 아래에 크랙을 발생시키지 않은 레벨이고, 또한 직경이 20∼30μm정도인 금선(22)이 칩(25)에 접촉한 포인트에서 접합을 진행시켜 가는데 가장 적당한 진폭이다. 본 실시예에서는 진동수 60kHz의 초음파진동을 사용한다.
금선(22)이 칩(25)에 접촉한 후에는 변위센서(19)의 출력변동을 검지하여 접촉을 검출한다. 접촉검출후 지연시간(T4)후에 초음파진폭을 A1에서 변위 1μm정도의 A2로 변화시켜 금선(22)의 찌부러짐 직경 증대에 따른 초음파진동을 인가하여 금선의 접합을 실행한다.
종래에는 금선(22)과 칩(25)의 접촉검지를 변위센서에 의해 실행했지만, 본 발명에 따르면 접촉보다 전에 초음파진동을 실행하도록 되어 있기 때문에 접촉시에 초음파 혼(16)으로의 부하가 변화하게 되므로 초음파진동에도 변화가 나타나게 되는데, 이 변화를 검출하여 접촉을 검지할 수도 있다.
또, 본 발명에서는 제 2 차 초음파진동의 진폭이 A1에서A2로 급격히 상승하고 있지만, 상승을 천천히 하여 금선의 찌부러짐상태에 따른 초음파진동으로 하여도 좋다. 이 경우는 크랙의 발생을 한층 감소시킬 수 있게 된다. A1에서 A2로의 변화는 임의의 변화율로 실시된다.
일반적으로 반도체칩의 전극면에는 Al막, Al-Si막, Al-Si-Ca막 등 단일막부터 여러가지가 적층된 다층막까지 있다. 이들 막은 각각 성질에 차이가 있는바, 강도, 표면산화막질, 표면산화강도, 표면산화막두께 등이 다르다. 단단하고 두꺼우며 대미지에 강한 막질의 반도체칩의 전극에는 진폭이 큰 1차 초음파진동을 인가하고, 얇고 대미지에 약한 막질의 전극에는 진폭이 작은 1차 초음파진동을 인가하도록 적절히 설정함으로써 다양한 반도체장치의 와이어본딩을 최적의 조건으로 실행할 수 있게 된다.
상기 실시에에서는 본딩방법으로서 초음파열압착법을 예로 들어 설명했지만, 초음파본딩법에도 적용할 수가 있다. 이 경우는 금선으로 알루미늄선을 이용하면 좋다.
한편, 본원 청구범위의 각 구성요소에 병기한 도면참조부호는 본원 발명의 이해를 용이하게 하기 위한 것으로, 본원 발명의 기술적 범위를 도면에 도시한 실시예로 한정할 의도로 병기한 것은 아니다.
[발명의 효과]
이상 설명한 바와 같이 본 발명에 따르면, 금선의 접촉면적과 전극면의 막질에 따른 초음파진동을 인가할 수 있기 때문에 금선과 전극의 접합력을 보다 향상시킬 수 있게 된다. 또, 어떠한 종류의 전극에 대해서도 최적의 조건에서 와이어본딩을 실행할 수 있는 등 현저한 효과를 발휘할 수 있게 된다.

Claims (1)

  1. 반도체칩(25)의 전극(26)과 리드프레임(24)의 리드를 초음파 혼(16)의 선단을 통과한 금선(22)으로 접속시키는 와이어본딩방법에 있어서, 상기 금선(22)이 상기 전극(26)에 접촉되기 전에 진폭이 1μm보다도 작은 제 1 차 초음파진동에서 상기 전극의 경도, 두께, 대미지에 대해 강하게 진폭을 비례시킨 초음파진동을 상기 금선(22)에 인가하는 공정과, 이 접촉후에 진폭이 1μm이상인 제 2 차 초음파진동에서 상기 금선(22)의 찌부러진 면적에 진폭을 비례시킨 초음파진동을 상기 금선(22)에 인가하는 공정을 구비하여 이루어진 것을 특징으로 하는 와이어본딩방법.
KR1019910002890A 1990-02-23 1991-02-22 와이어본딩 방법 KR950000097B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02-041238 1990-02-23
JP2041238A JPH088285B2 (ja) 1990-02-23 1990-02-23 ワイヤボンディング方法

Publications (2)

Publication Number Publication Date
KR920000118A KR920000118A (ko) 1992-01-10
KR950000097B1 true KR950000097B1 (ko) 1995-01-09

Family

ID=12602847

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002890A KR950000097B1 (ko) 1990-02-23 1991-02-22 와이어본딩 방법

Country Status (3)

Country Link
US (1) US5115960A (ko)
JP (1) JPH088285B2 (ko)
KR (1) KR950000097B1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2879270B2 (ja) * 1991-04-16 1999-04-05 株式会社新川 ボンデイング装置
US5586713A (en) * 1993-08-31 1996-12-24 Matsushita Electric Industrial Co., Ltd. Method for wire bonding
US6213378B1 (en) * 1997-01-15 2001-04-10 National Semiconductor Corporation Method and apparatus for ultra-fine pitch wire bonding
US6152350A (en) * 1997-06-19 2000-11-28 Fuji Photo Film Co., Ltd. Ultrasonic welding device and method, and a magnetic tape cartridge reel welding device and method
DE19902827C1 (de) * 1999-01-15 2000-06-08 Hielscher Gmbh Verfahren zum Konstanthalten der mittleren Spaltbreite zwischen einer Sonotrode eines Ultraschall-Systems und einem als Gegenwerkzeug ausgebildeten Schneidwerkzeugs einer Ultraschall-Schneideinrichtung
JP3474132B2 (ja) * 1999-09-28 2003-12-08 インターナショナル・ビジネス・マシーンズ・コーポレーション ワイヤボンディング方法および装置
TW521358B (en) * 2000-09-22 2003-02-21 Asm Tech Singapore Pte Ltd A method of bonding wires
JP4202617B2 (ja) * 2001-03-16 2008-12-24 矢崎総業株式会社 被覆電線の超音波接合方法およびその方法を用いた超音波接合装置
JP4531084B2 (ja) * 2007-08-31 2010-08-25 株式会社新川 ボンディング装置及びボンディング方法
US11517977B2 (en) * 2017-09-15 2022-12-06 Tech-Sonic, Inc. Dual cam servo weld splicer
EP3603826B1 (en) * 2018-07-31 2023-05-10 Infineon Technologies AG Method for calibrating an ultrasonic bonding machine

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950536A (ja) * 1982-09-16 1984-03-23 Toshiba Corp ワイヤボンデイング装置
SU1094704A1 (ru) * 1982-12-30 1984-05-30 Предприятие П/Я Р-6429 Способ ультразвуковой сварки
US4496095A (en) * 1983-04-12 1985-01-29 Fairchild Industries, Inc. Progressive ultrasonic welding system
US4597519A (en) * 1984-02-27 1986-07-01 Fairchild Camera & Instrument Corporation Lead wire bonding with increased bonding surface area
US4696425A (en) * 1984-07-17 1987-09-29 Texas Instruments Incorporated Programmable ultrasonic power supply
JPH0732173B2 (ja) * 1985-03-15 1995-04-10 株式会社東芝 ワイヤボンデイング方法
JPS62126647A (ja) * 1985-11-28 1987-06-08 Toshiba Corp ワイヤボンデイング方法
JPS63194343A (ja) * 1987-02-09 1988-08-11 Toshiba Corp ワイヤボンディング装置の制御方法
JPH01241838A (ja) * 1988-03-23 1989-09-26 Mitsubishi Electric Corp ワイヤボンデイング方法
JPH0244745A (ja) * 1988-08-05 1990-02-14 Sharp Corp ワイヤボンディング方法

Also Published As

Publication number Publication date
JPH088285B2 (ja) 1996-01-29
US5115960A (en) 1992-05-26
JPH03245544A (ja) 1991-11-01
KR920000118A (ko) 1992-01-10

Similar Documents

Publication Publication Date Title
KR950000097B1 (ko) 와이어본딩 방법
JP4546576B2 (ja) バンプ接合判定装置及び方法、並びに半導体部品製造装置及び方法
JP3377934B2 (ja) バンプボンディング方法およびバンプボンディング装置
US5559290A (en) Capacitance type accelerometer
KR950009619B1 (ko) 반도체장치의 와이어 본딩방법
JPH0713988B2 (ja) ワイヤボンディング方法
US5981371A (en) Bump forming method
US5221037A (en) Wire bonding method and apparatus
KR920007157B1 (ko) 와이어 본딩방법
JPH09270440A (ja) 半導体実装方法とその半導体実装装置
JP2004303757A (ja) ボンディング装置
JPH08181175A (ja) ワイヤボンディング方法
JP4582056B2 (ja) センサ装置
JP2001189339A (ja) 半導体チップ素子、半導体チップ素子実装装置及び実装方法
JP2000174056A (ja) ワイヤボンディング装置
JP7488656B2 (ja) ワイヤボンディング装置及びワイヤボンディング方法
JPS63257238A (ja) ワイヤボンデイング装置
JP2006303168A (ja) ワイヤボンディング方法及び装置
JPH05114629A (ja) ワイヤボンデイング方法及び装置
JP2002076049A (ja) ワイヤボンディング装置及び電気部品の製造方法
JP3912361B2 (ja) ワイヤボンディング装置
JP2001217274A (ja) 金属バンプの形成方法
JPH039525A (ja) バンプ形成方法及びその形成装置
JPH06216396A (ja) 加速度センサ
JP2001210666A (ja) 突起電極形成装置および突起電極形成方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20101222

Year of fee payment: 17

EXPY Expiration of term