KR940027321A - 필드 프로그래머블 게이트 어레이 - Google Patents

필드 프로그래머블 게이트 어레이 Download PDF

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KR940027321A
KR940027321A KR1019940009985A KR19940009985A KR940027321A KR 940027321 A KR940027321 A KR 940027321A KR 1019940009985 A KR1019940009985 A KR 1019940009985A KR 19940009985 A KR19940009985 A KR 19940009985A KR 940027321 A KR940027321 A KR 940027321A
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potential
wiring
wirings
voltage supply
voltage
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KR1019940009985A
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KR0139869B1 (en
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마코토 다카하시
후미토시 하토리
가즈타카 노가미
마사노리 우티다
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사토 후미오
가부시키가이샤 도시바
오카모토 세이시
도시바 마이크로일렉트로닉스 가부시키가이샤
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters
    • H03K19/17796—Structural details for adapting physical parameters for physical disposition of blocks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17704—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns

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  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

FPGA에 있어서, 어레이형상으로 배치된 프로그래머블 소자의 프로그래밍을 실현가능하게 함과 더불어, 안티퓨즈의 프로그램시에 이미 프로그램완료된 안티퓨즈의 영향을 배제하고, 프로그램중의 소비전력을 저하시킴과 더불어 로직 블럭과 프로그램수순에 대한 제약을 제거하는 데에 있다. 더욱이, 배선 리소스의 테스트를 고속화하는 것도 목적으로 한다.
본 발명에 있어서는, 프로그램대상으로 하는 프로그래머블 소자가 접속된 제1, 제 2 배선간에 프로그래밍 전압이 인가된다. 이 이외의 프로그래머블 소자가 접속된 제1, 제 2 배선간에는 프로그래밍 전압보다도 낮은 전압을 인가한 후에 부유 상태로 되기 때문에 전원간의 단락이 생기지 않는다.
본 발명에 있어서는, 프로그래머블 소자가 접속된 로직 블럭의 출력선을 전원선으로부터 차단 가능하게 하였기 때문에, 로직 블럭이나 프로그램 수순에 대한 제약이 없어진다.
피시험배선에 소정의 전위를 인가하고, 일단에 그것과 반대의 전위를 인가하며, 타단에서의 전위를 판정함으로써, 배선 리소스의 시험을 행한다.

Description

필드 프로그래머블 게이트 어레이
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 4 도는 본 발명의 제 1 실시예를 나타낸 도면, 제 5 도는 제 4 도의 전위상태를 실현하기 위한 회로예와 그 프로그램 중의 전위예를 나타낸 도면.

Claims (10)

  1. 복수의 제 1 배선으로 이루어진 제 1 배선군(R1∼R6)과, 복수의 제 2 배선으로 이루어진 제 2 배선군(C1∼C6), 상기 제1, 제 2 배선의 적어도 한개의 교우부분에 어레이형상으로 설치되며, 일단이 상기 제1 배선에 접속되고, 타단이 상기 제 2 배선에 접속되며, 상기 제1, 제 2 배선간에 프로그래밍 전압을 인가함으로써 프로그램되어 상기 제1, 제 2 배선의 차단과 도통의 한쪽으로부터 다른쪽으로 절환되는 복수의 프로그래머블 소자(A11∼A16, A21∼A26, A31∼A36) 및, 상기 제 1, 제 2 배선에 전압을 인가하는 전압공급 수단으로, 프로그램 대상으로 하는 프로그래머블 소자가 접속된 제1, 제 2 배선간에는프로그래밍 전압을 인가하고, 프로그램대상 외의 프로그래머블 소자가 접속된 제 1, 제 2 배선간에는 상기 프로그래밍 전압보다도 낮은 프로그래머블 소자의 상태가 변하지 않는 것과 같은 중간전위를 주는 전압공급수단(Trn1∼Trn3, Trp1∼Trp3)을 구비한 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
  2. 제 1 항에 있어서, 상기 전압공급수단은, 상기 프로그램의 실시시에 프로그램대상 외의 프로그래머블 소자가 접속된 상기 제1, 제 2 배선을 상기 중간전위에 유지하면서 부유상태로 하는 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
  3. 제 1 항 또는 제 2 항에 있어서, 상기 전압공급수단은, 상기 제 1 배선에 대해 상기 프로그래밍 전위와 상기 중간전위를 공급가능하고, 상기 제 2 배선에 대해 접지전위와 상기 중간전위를 공급가능한 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
  4. 제 3 항에 있어서, 상기 전압공급수단은, PMOS 트랜지스터를 매개해서 상기 제 1 배선에 전압을 인가하고, NMOS 트랜지스터를 매개해서 상기 제 2 배선에 전압을 인가하는 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
  5. 복수의 제 1 배선으로 이루어진 제 1 배선군(R1∼R6)과, 복수의 제 2 배선으로 이루어진 제 2 배선군(C1∼C6), 상기 제1, 제 2 배선의 적어도 한 개의 교우부분에 설치되며, 일단이 상기 제 1 배선에 접속되고, 타단이 상기 제 2 배선에 접속되며, 그 양단에 프로그램 전압을 인가함으로써 양자를 선택적으로 도통 또는 차단하는 스위칭수단(A11∼A16, A21∼A26, A31∼A36), 적어도 한개의 입력단자와 적어도 한개의 출력단자를 갖추고, 그들 출력단자의 적어도 한개가 상기 제 1 배선의 어느 하나와 접속된 복수의 회로블럭(LB1∼LB6) 및, 상기 회로블럭의 출력단자를 적어도 상기 스위칭수단의 프로그램시에 입력단자의 전위에 의하지 않고, 전원선 및 접지선의 적어도 한쪽과 차단할 수 있는 수단(Sn1∼Sn6, Sp1∼Sp6)을 구비한 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
  6. 상기 차단할 수 있는 수단으로서, 그 양단에 프로그램 전압을 인가함으로써 양자를 선택적으로 도통 또는 차단하는 스위칭수단을 구비한 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
  7. 상기 차단할 수 있는 수단으로서, 트랜지스터를 이용하는 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
  8. 피시험배선(L0)의 한쪽의 단에 접속된 고전위 또는 저전위를 인가하는 전압공급수단(T1)과, 상기 한쪽의 단에 설치된 전압공급수단이 공급하는 전위와 역의 전위를 그 배선에 인가하는 전압공급수단(T2) 및, 상기 한쪽의 단과는 다른 다른쪽의 단에 접속되고, 다른쪽의 단의 전위가 상기 한쪽의 단에 설치된 전압공급수단이 인가하는 전위인가 아닌가를 판정하는 수단(T3∼T5)을 구비한 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
  9. 제 8 항에 있어서, 상기 전압공급수단이 인가하는 전위인가 아닌가를 판정하는 수단으로서, 상기 전압공급수단이 인가하는 전위가 고전위인 경우에는, 고전위로부터 p형 전계효과 트랜지스터의 임계치분보다 낮게 되었을 때에만 고전위를 출력하고, 그 이외의 경우에는 저전위를 출력하며, 상기 전압공급수단이 주는 전위가 저전위인 경우에는, 저전위로부터 n형 전계효과 트랜지스터의 임계치분보다 높게 되었을 때에만 저전위를 출력하고, 그 이외의 경우에는 고전위를 출력하는 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
  10. 제 8 항에 있어서, 상기 피시험배선 이외의 배선중, 적어도 인접 또는 교우하는 배선의 전위를, 적어도 시험중에 있어서는 상기 피시험배선의 한쪽의 단에 접속된 고전위 또는 저전위를 인가하는 전압공급수단과는 다른 전위를 인가해 두는 것을 특징으로 하는 필드 프로그래머블 게이트 어레이.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR94009985A 1993-05-07 1994-05-07 Field programmable gate array KR0139869B1 (en)

Applications Claiming Priority (2)

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JP93-106999 1993-05-07
JP5106999A JPH06318864A (ja) 1993-05-07 1993-05-07 フィールドプログラマブルゲートアレイ

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KR940027321A true KR940027321A (ko) 1994-12-10
KR0139869B1 KR0139869B1 (en) 1998-07-15

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Families Citing this family (210)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367208A (en) 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US5594363A (en) * 1995-04-07 1997-01-14 Zycad Corporation Logic cell and routing architecture in a field programmable gate array
US5712577A (en) * 1996-04-18 1998-01-27 Electronics And Telecommunications Research Institute Anti-fuse programming circuit for user programmable integrated
US5901279A (en) * 1996-10-18 1999-05-04 Hughes Electronics Corporation Connection of spares between multiple programmable devices
US5859562A (en) * 1996-12-24 1999-01-12 Actel Corporation Programming circuit for antifuses using bipolar and SCR devices
KR100487914B1 (ko) * 1997-12-29 2005-08-24 주식회사 하이닉스반도체 안티퓨우즈안정화회로
US6272655B1 (en) * 1998-06-11 2001-08-07 Actel Corporation Method of reducing test time for NVM cell-based FPGA
KR100516693B1 (ko) * 2003-04-02 2005-09-22 주식회사 하이닉스반도체 불휘발성 프로그래머블 로직 회로
US6567968B1 (en) * 2000-03-06 2003-05-20 Actel Corporation Block level routing architecture in a field programmable gate array
KR100399896B1 (ko) * 2001-04-23 2003-09-29 주식회사 하이닉스반도체 안티 퓨즈용 공급전압 콘트롤회로
US6621324B2 (en) * 2002-02-19 2003-09-16 International Business Machines Corporation Redundant antifuse segments for improved programming efficiency
US8004876B2 (en) * 2002-08-30 2011-08-23 Hewlett-Packard Development Company, L.P. Configurable molecular switch array
US7248094B1 (en) * 2004-11-24 2007-07-24 Actel Corporation Circuit and method for supplying programming potential at voltages larger than BVDss of programming transistors
US8258810B2 (en) 2010-09-30 2012-09-04 Monolithic 3D Inc. 3D semiconductor device
US8378715B2 (en) 2009-04-14 2013-02-19 Monolithic 3D Inc. Method to construct systems
US8754533B2 (en) * 2009-04-14 2014-06-17 Monolithic 3D Inc. Monolithic three-dimensional semiconductor device and structure
US8384426B2 (en) * 2009-04-14 2013-02-26 Monolithic 3D Inc. Semiconductor device and structure
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8362800B2 (en) 2010-10-13 2013-01-29 Monolithic 3D Inc. 3D semiconductor device including field repairable logics
US8427200B2 (en) 2009-04-14 2013-04-23 Monolithic 3D Inc. 3D semiconductor device
US9577642B2 (en) 2009-04-14 2017-02-21 Monolithic 3D Inc. Method to form a 3D semiconductor device
US8395191B2 (en) * 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US20110031997A1 (en) * 2009-04-14 2011-02-10 NuPGA Corporation Method for fabrication of a semiconductor device and structure
US7986042B2 (en) 2009-04-14 2011-07-26 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8669778B1 (en) 2009-04-14 2014-03-11 Monolithic 3D Inc. Method for design and manufacturing of a 3D semiconductor device
US9509313B2 (en) 2009-04-14 2016-11-29 Monolithic 3D Inc. 3D semiconductor device
US8405420B2 (en) * 2009-04-14 2013-03-26 Monolithic 3D Inc. System comprising a semiconductor device and structure
US8373439B2 (en) 2009-04-14 2013-02-12 Monolithic 3D Inc. 3D semiconductor device
US9711407B2 (en) * 2009-04-14 2017-07-18 Monolithic 3D Inc. Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
US8362482B2 (en) * 2009-04-14 2013-01-29 Monolithic 3D Inc. Semiconductor device and structure
US8310367B1 (en) 2009-05-18 2012-11-13 Empire Technology Development Llc Methods of implanting electronics in objects and objects with implanted electronics
US8742476B1 (en) 2012-11-27 2014-06-03 Monolithic 3D Inc. Semiconductor device and structure
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US10043781B2 (en) 2009-10-12 2018-08-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11374118B2 (en) 2009-10-12 2022-06-28 Monolithic 3D Inc. Method to form a 3D integrated circuit
US8581349B1 (en) 2011-05-02 2013-11-12 Monolithic 3D Inc. 3D memory semiconductor device and structure
US10388863B2 (en) 2009-10-12 2019-08-20 Monolithic 3D Inc. 3D memory device and structure
US10910364B2 (en) 2009-10-12 2021-02-02 Monolitaic 3D Inc. 3D semiconductor device
US11984445B2 (en) 2009-10-12 2024-05-14 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US8476145B2 (en) 2010-10-13 2013-07-02 Monolithic 3D Inc. Method of fabricating a semiconductor device and structure
US8536023B2 (en) 2010-11-22 2013-09-17 Monolithic 3D Inc. Method of manufacturing a semiconductor device and structure
US10157909B2 (en) 2009-10-12 2018-12-18 Monolithic 3D Inc. 3D semiconductor device and structure
US8373230B1 (en) 2010-10-13 2013-02-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US8026521B1 (en) 2010-10-11 2011-09-27 Monolithic 3D Inc. Semiconductor device and structure
US8541819B1 (en) 2010-12-09 2013-09-24 Monolithic 3D Inc. Semiconductor device and structure
US8461035B1 (en) 2010-09-30 2013-06-11 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8298875B1 (en) 2011-03-06 2012-10-30 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8492886B2 (en) 2010-02-16 2013-07-23 Monolithic 3D Inc 3D integrated circuit with logic
US9953925B2 (en) 2011-06-28 2018-04-24 Monolithic 3D Inc. Semiconductor system and device
US10217667B2 (en) 2011-06-28 2019-02-26 Monolithic 3D Inc. 3D semiconductor device, fabrication method and system
US9219005B2 (en) 2011-06-28 2015-12-22 Monolithic 3D Inc. Semiconductor system and device
US8901613B2 (en) 2011-03-06 2014-12-02 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US8642416B2 (en) 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
US11482440B2 (en) 2010-12-16 2022-10-25 Monolithic 3D Inc. 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
US8163581B1 (en) 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US10497713B2 (en) 2010-11-18 2019-12-03 Monolithic 3D Inc. 3D semiconductor memory device and structure
US8273610B2 (en) 2010-11-18 2012-09-25 Monolithic 3D Inc. Method of constructing a semiconductor device and structure
US8114757B1 (en) 2010-10-11 2012-02-14 Monolithic 3D Inc. Semiconductor device and structure
US11158674B2 (en) 2010-10-11 2021-10-26 Monolithic 3D Inc. Method to produce a 3D semiconductor device and structure
US11024673B1 (en) 2010-10-11 2021-06-01 Monolithic 3D Inc. 3D semiconductor device and structure
US11227897B2 (en) 2010-10-11 2022-01-18 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11257867B1 (en) 2010-10-11 2022-02-22 Monolithic 3D Inc. 3D semiconductor device and structure with oxide bonds
US11600667B1 (en) 2010-10-11 2023-03-07 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US10290682B2 (en) 2010-10-11 2019-05-14 Monolithic 3D Inc. 3D IC semiconductor device and structure with stacked memory
US11018191B1 (en) 2010-10-11 2021-05-25 Monolithic 3D Inc. 3D semiconductor device and structure
US11315980B1 (en) 2010-10-11 2022-04-26 Monolithic 3D Inc. 3D semiconductor device and structure with transistors
US11469271B2 (en) 2010-10-11 2022-10-11 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US10896931B1 (en) 2010-10-11 2021-01-19 Monolithic 3D Inc. 3D semiconductor device and structure
US11855114B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US10833108B2 (en) 2010-10-13 2020-11-10 Monolithic 3D Inc. 3D microdisplay device and structure
US9197804B1 (en) 2011-10-14 2015-11-24 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US11164898B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure
US10679977B2 (en) 2010-10-13 2020-06-09 Monolithic 3D Inc. 3D microdisplay device and structure
US11327227B2 (en) 2010-10-13 2022-05-10 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11163112B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11929372B2 (en) 2010-10-13 2024-03-12 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11855100B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11437368B2 (en) 2010-10-13 2022-09-06 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US8283215B2 (en) 2010-10-13 2012-10-09 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US11694922B2 (en) 2010-10-13 2023-07-04 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11404466B2 (en) 2010-10-13 2022-08-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US10998374B1 (en) 2010-10-13 2021-05-04 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11984438B2 (en) 2010-10-13 2024-05-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11133344B2 (en) 2010-10-13 2021-09-28 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US10943934B2 (en) 2010-10-13 2021-03-09 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11869915B2 (en) 2010-10-13 2024-01-09 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
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US11355380B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
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US11482438B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11018042B1 (en) 2010-11-18 2021-05-25 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11211279B2 (en) 2010-11-18 2021-12-28 Monolithic 3D Inc. Method for processing a 3D integrated circuit and structure
US11508605B2 (en) 2010-11-18 2022-11-22 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11004719B1 (en) 2010-11-18 2021-05-11 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11443971B2 (en) 2010-11-18 2022-09-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11735462B2 (en) 2010-11-18 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11495484B2 (en) 2010-11-18 2022-11-08 Monolithic 3D Inc. 3D semiconductor devices and structures with at least two single-crystal layers
US11923230B1 (en) 2010-11-18 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11094576B1 (en) 2010-11-18 2021-08-17 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11610802B2 (en) 2010-11-18 2023-03-21 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
US11031275B2 (en) 2010-11-18 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11862503B2 (en) 2010-11-18 2024-01-02 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11164770B1 (en) 2010-11-18 2021-11-02 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US8975670B2 (en) 2011-03-06 2015-03-10 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US10388568B2 (en) 2011-06-28 2019-08-20 Monolithic 3D Inc. 3D semiconductor device and system
US8687399B2 (en) 2011-10-02 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US9029173B2 (en) 2011-10-18 2015-05-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9000557B2 (en) 2012-03-17 2015-04-07 Zvi Or-Bach Semiconductor device and structure
US11735501B1 (en) 2012-04-09 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11476181B1 (en) 2012-04-09 2022-10-18 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11694944B1 (en) 2012-04-09 2023-07-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11410912B2 (en) 2012-04-09 2022-08-09 Monolithic 3D Inc. 3D semiconductor device with vias and isolation layers
US11616004B1 (en) 2012-04-09 2023-03-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11088050B2 (en) 2012-04-09 2021-08-10 Monolithic 3D Inc. 3D semiconductor device with isolation layers
US10600888B2 (en) 2012-04-09 2020-03-24 Monolithic 3D Inc. 3D semiconductor device
US11594473B2 (en) 2012-04-09 2023-02-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11164811B2 (en) 2012-04-09 2021-11-02 Monolithic 3D Inc. 3D semiconductor device with isolation layers and oxide-to-oxide bonding
US11881443B2 (en) 2012-04-09 2024-01-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US8557632B1 (en) 2012-04-09 2013-10-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8686428B1 (en) 2012-11-16 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US8574929B1 (en) 2012-11-16 2013-11-05 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11784169B2 (en) 2012-12-22 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11217565B2 (en) 2012-12-22 2022-01-04 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11967583B2 (en) 2012-12-22 2024-04-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US8674470B1 (en) 2012-12-22 2014-03-18 Monolithic 3D Inc. Semiconductor device and structure
US11018116B2 (en) 2012-12-22 2021-05-25 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11961827B1 (en) 2012-12-22 2024-04-16 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11063024B1 (en) 2012-12-22 2021-07-13 Monlithic 3D Inc. Method to form a 3D semiconductor device and structure
US11309292B2 (en) 2012-12-22 2022-04-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11916045B2 (en) 2012-12-22 2024-02-27 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US10115663B2 (en) 2012-12-29 2018-10-30 Monolithic 3D Inc. 3D semiconductor device and structure
US9871034B1 (en) 2012-12-29 2018-01-16 Monolithic 3D Inc. Semiconductor device and structure
US10892169B2 (en) 2012-12-29 2021-01-12 Monolithic 3D Inc. 3D semiconductor device and structure
US10600657B2 (en) 2012-12-29 2020-03-24 Monolithic 3D Inc 3D semiconductor device and structure
US9385058B1 (en) 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US10903089B1 (en) 2012-12-29 2021-01-26 Monolithic 3D Inc. 3D semiconductor device and structure
US11087995B1 (en) 2012-12-29 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US11430668B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11004694B1 (en) 2012-12-29 2021-05-11 Monolithic 3D Inc. 3D semiconductor device and structure
US10651054B2 (en) 2012-12-29 2020-05-12 Monolithic 3D Inc. 3D semiconductor device and structure
US11177140B2 (en) 2012-12-29 2021-11-16 Monolithic 3D Inc. 3D semiconductor device and structure
US11430667B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11935949B1 (en) 2013-03-11 2024-03-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11869965B2 (en) 2013-03-11 2024-01-09 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US8902663B1 (en) 2013-03-11 2014-12-02 Monolithic 3D Inc. Method of maintaining a memory state
US10325651B2 (en) 2013-03-11 2019-06-18 Monolithic 3D Inc. 3D semiconductor device with stacked memory
US8994404B1 (en) 2013-03-12 2015-03-31 Monolithic 3D Inc. Semiconductor device and structure
US11398569B2 (en) 2013-03-12 2022-07-26 Monolithic 3D Inc. 3D semiconductor device and structure
US11088130B2 (en) 2014-01-28 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US11923374B2 (en) 2013-03-12 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US10840239B2 (en) 2014-08-26 2020-11-17 Monolithic 3D Inc. 3D semiconductor device and structure
US9117749B1 (en) 2013-03-15 2015-08-25 Monolithic 3D Inc. Semiconductor device and structure
US10224279B2 (en) 2013-03-15 2019-03-05 Monolithic 3D Inc. Semiconductor device and structure
US11030371B2 (en) 2013-04-15 2021-06-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11720736B2 (en) 2013-04-15 2023-08-08 Monolithic 3D Inc. Automation methods for 3D integrated circuits and devices
US11270055B1 (en) 2013-04-15 2022-03-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11341309B1 (en) 2013-04-15 2022-05-24 Monolithic 3D Inc. Automation for monolithic 3D devices
US11487928B2 (en) 2013-04-15 2022-11-01 Monolithic 3D Inc. Automation for monolithic 3D devices
US9021414B1 (en) 2013-04-15 2015-04-28 Monolithic 3D Inc. Automation for monolithic 3D devices
US11574109B1 (en) 2013-04-15 2023-02-07 Monolithic 3D Inc Automation methods for 3D integrated circuits and devices
US11107808B1 (en) 2014-01-28 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure
US10297586B2 (en) 2015-03-09 2019-05-21 Monolithic 3D Inc. Methods for processing a 3D semiconductor device
US11031394B1 (en) 2014-01-28 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure
US11011507B1 (en) 2015-04-19 2021-05-18 Monolithic 3D Inc. 3D semiconductor device and structure
US11056468B1 (en) 2015-04-19 2021-07-06 Monolithic 3D Inc. 3D semiconductor device and structure
US10825779B2 (en) 2015-04-19 2020-11-03 Monolithic 3D Inc. 3D semiconductor device and structure
US10381328B2 (en) 2015-04-19 2019-08-13 Monolithic 3D Inc. Semiconductor device and structure
US11956952B2 (en) 2015-08-23 2024-04-09 Monolithic 3D Inc. Semiconductor memory device and structure
CN108401468A (zh) 2015-09-21 2018-08-14 莫诺利特斯3D有限公司 3d半导体器件和结构
US11978731B2 (en) 2015-09-21 2024-05-07 Monolithic 3D Inc. Method to produce a multi-level semiconductor memory device and structure
US11114427B2 (en) 2015-11-07 2021-09-07 Monolithic 3D Inc. 3D semiconductor processor and memory device and structure
US11937422B2 (en) 2015-11-07 2024-03-19 Monolithic 3D Inc. Semiconductor memory device and structure
US10522225B1 (en) 2015-10-02 2019-12-31 Monolithic 3D Inc. Semiconductor device with non-volatile memory
US12016181B2 (en) 2015-10-24 2024-06-18 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US11296115B1 (en) 2015-10-24 2022-04-05 Monolithic 3D Inc. 3D semiconductor device and structure
US11991884B1 (en) 2015-10-24 2024-05-21 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US10418369B2 (en) 2015-10-24 2019-09-17 Monolithic 3D Inc. Multi-level semiconductor memory device and structure
US10847540B2 (en) 2015-10-24 2020-11-24 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11114464B2 (en) 2015-10-24 2021-09-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11869591B2 (en) 2016-10-10 2024-01-09 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11251149B2 (en) 2016-10-10 2022-02-15 Monolithic 3D Inc. 3D memory device and structure
US11711928B2 (en) 2016-10-10 2023-07-25 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11812620B2 (en) 2016-10-10 2023-11-07 Monolithic 3D Inc. 3D DRAM memory devices and structures with control circuits
US11930648B1 (en) 2016-10-10 2024-03-12 Monolithic 3D Inc. 3D memory devices and structures with metal layers
US11329059B1 (en) 2016-10-10 2022-05-10 Monolithic 3D Inc. 3D memory devices and structures with thinned single crystal substrates
US11158652B1 (en) 2019-04-08 2021-10-26 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11763864B2 (en) 2019-04-08 2023-09-19 Monolithic 3D Inc. 3D memory semiconductor devices and structures with bit-line pillars
US10892016B1 (en) 2019-04-08 2021-01-12 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11018156B2 (en) 2019-04-08 2021-05-25 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11296106B2 (en) 2019-04-08 2022-04-05 Monolithic 3D Inc. 3D memory semiconductor devices and structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083083A (en) * 1986-09-19 1992-01-21 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US5223792A (en) * 1986-09-19 1993-06-29 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US5015885A (en) * 1986-09-19 1991-05-14 Actel Corporation Reconfigurable programmable interconnect architecture
US5367207A (en) * 1990-12-04 1994-11-22 Xilinx, Inc. Structure and method for programming antifuses in an integrated circuit array
US5166557A (en) * 1991-01-02 1992-11-24 Texas Instruments Incorporated Gate array with built-in programming circuitry
US5130777A (en) * 1991-01-04 1992-07-14 Actel Corporation Apparatus for improving antifuse programming yield and reducing antifuse programming time
EP0525939A3 (en) * 1991-07-31 1993-07-07 Actel Corporation Methods for protecting outputs of low-voltage circuits from high programming voltages
WO1993003497A1 (en) * 1991-07-31 1993-02-18 Quicklogic Corporation Programming of antifuses
US5371414A (en) * 1993-05-26 1994-12-06 Actel Corporation Simultaneous multiple antifuse programming method

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