KR940022822A - 반도체 패키지 - Google Patents

반도체 패키지 Download PDF

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Publication number
KR940022822A
KR940022822A KR1019930004245A KR930004245A KR940022822A KR 940022822 A KR940022822 A KR 940022822A KR 1019930004245 A KR1019930004245 A KR 1019930004245A KR 930004245 A KR930004245 A KR 930004245A KR 940022822 A KR940022822 A KR 940022822A
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KR
South Korea
Prior art keywords
leads
semiconductor
semiconductor chips
semiconductor chip
package
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Application number
KR1019930004245A
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English (en)
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KR100235108B1 (ko
Inventor
송영재
최완근
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김광호
삼성전자 주식회사
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Priority to KR1019930004245A priority Critical patent/KR100235108B1/ko
Publication of KR940022822A publication Critical patent/KR940022822A/ko
Application granted granted Critical
Publication of KR100235108B1 publication Critical patent/KR100235108B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

이 발명은 반도체 패키지에서, 서로 크기가 다른 두개의 반도체 칩을 일정간격으로 형성되어 있는 리드들의 일측 상부 및 하부에 작고 큰 두개의 반도체 칩을 실장하거나, 리드들의 일측 상부에 두개의 반도체칩을 적층 절연실장하여 와이어로 리드들과 연결하였으므로, 모듈이나 IC카드등의 면적을 적게 차지하여 메모리 용량 및 실장 밀도를 향상시킬 수 있으며, 서로 동작이 다른 두개의 반도체칩을 리드의수를 증가시켜 하나의 패키지 몸체에 실장하였으므로, 모듈등의 실장밀도를 향상시킬 수 있다.

Description

반도체 패키지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 이 발명에 따른 반도체 패키지의 일실시예의 단면도, 제4도는 이 발명에 따른 반도체 패키지의 다른 실시예의 단면도이다.

Claims (6)

  1. 일정간격으로 형성되어 있는 리드들과; 상기 리드들의 일측상부에 실장되며, 상기 리드들과 제1와이어로 연결되는 제1반도체 칩과; 상기 제1반도체 칩보다 면적이 크며, 상기 리드들의 일측 하부에 실장되고, 상기 리드들과 중첩되지 않는 부분에 본딩패드들이 형성되어 있으며, 상기 리드들과 제2와이어로 연결되는 제2반도체 칩과; 상기 제1 및 제2반도체 칩과 제1 및 제2와이어를 감싸 보호하는 패키지 몸체를 구비하는 반도체 패키지.
  2. 제1항에 있어서, 상기 제1 및 제2반도체 칩이 폴리이미드테이프 및 절연 접착제로 이루어지는 군에서 임의로 선택되는 하나의 수단으로 실장되는 반도체 패키지.
  3. 제1항에 있어서, 상기 제1 및 제2반도체 칩이 동일한 동작을 수행하는 반도체 칩이거나 서로 다른 동작을 수행하는 반도체 칩인 반도체 패키지.
  4. 제3항에 있어서, 상기 제1 및 제2반도체 칩이 서로 다른 동작을 수행하는 반도체 칩이며 상기 리드들이 각각 하나의 반도체칩과만 연결되는 반도체 패키지.
  5. 일정간격으로 형성되어 있는 리드들과; 상기 리드들의 일측 상부에 절연실장되며, 상기 리드들과 제1와이어들로 연결되어 있는 제1반도체 칩과; 상기 제1반도체 칩 보다 면적이 작고, 상기 제1반도체 칩의 상부에 절연실장되며, 상기 리드들과 제2와이어들로 연결되어 있는 제2반도체 칩과; 상기 제1 및 제2반도체 칩과 제1 및 제2와이어를 감싸 보호하는 패키지 몸체를 구비하는 반도체 패키지.
  6. 제5항에 있어서, 상기 제1 및 제2반도체 칩이 동일한 동작을 수행하는 메모리용 반도체 칩이며 동일한 동작을 수행하는 본딩패드들은 동일한 리드와 연결되어 있는 반도체 패키지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930004245A 1993-03-19 1993-03-19 반도체 패키지 KR100235108B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930004245A KR100235108B1 (ko) 1993-03-19 1993-03-19 반도체 패키지

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930004245A KR100235108B1 (ko) 1993-03-19 1993-03-19 반도체 패키지

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KR940022822A true KR940022822A (ko) 1994-10-21
KR100235108B1 KR100235108B1 (ko) 1999-12-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100618541B1 (ko) * 1999-07-06 2006-08-31 삼성전자주식회사 다층 반도체 칩 패키지 제작 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7303137B2 (en) 2005-02-04 2007-12-04 Chun-Hsin Ho Dual integrated circuit card system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750759B2 (ja) * 1988-07-01 1995-05-31 シャープ株式会社 半導体装置
JPH04142073A (ja) * 1990-10-02 1992-05-15 Nec Yamagata Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100618541B1 (ko) * 1999-07-06 2006-08-31 삼성전자주식회사 다층 반도체 칩 패키지 제작 방법

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KR100235108B1 (ko) 1999-12-15

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