KR940022125A - 포커스 이온빔 장치 및 방법 - Google Patents

포커스 이온빔 장치 및 방법 Download PDF

Info

Publication number
KR940022125A
KR940022125A KR1019940004030A KR19940004030A KR940022125A KR 940022125 A KR940022125 A KR 940022125A KR 1019940004030 A KR1019940004030 A KR 1019940004030A KR 19940004030 A KR19940004030 A KR 19940004030A KR 940022125 A KR940022125 A KR 940022125A
Authority
KR
South Korea
Prior art keywords
ion beam
liquid metal
metal ion
gas
focused
Prior art date
Application number
KR1019940004030A
Other languages
English (en)
Other versions
KR100364207B1 (ko
Inventor
도시아키 후지이
다츠야 아다치
Original Assignee
이토 기요시
세이코덴시고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12611825&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR940022125(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 이토 기요시, 세이코덴시고교 가부시키가이샤 filed Critical 이토 기요시
Publication of KR940022125A publication Critical patent/KR940022125A/ko
Application granted granted Critical
Publication of KR100364207B1 publication Critical patent/KR100364207B1/ko

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

본 발명에서의 샘플 즉, 포커싱된 액체 금속이온빔이 처리 및/혹은 관찰된 반도체장치는 제조공정으로 재차 복귀할 수 있다.
본 장치에 사용된 금속이온이 통상적으로 Ga 이온이다. Ga 이온은 자동-도핑에 반도체 장치 및 반도체 제조장치를 오염시킨다.
포커싱된 액체금속이온이 조사되는 구역은 금속이온에 의해 도핑되고 가스이온빔이 조사함에 따라 제거되어 경융해금속으로 커버된다.

Description

포커스 이온빔 장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 일실시예의 단면도,
제 4 도는 본 발명의 또다른 단면도.

Claims (4)

  1. 반복된 스케닝에 의해 적절하게 포커싱된 액체 금속이온빔을 샘플의 소정영역에 조사하는 액체금속이온빔 조사유니트와, 샘플 특성에 악영향을 끼치지 않는 가스성분의 이온빔을 조사하는 가스이온빔 조사유니트로 구성된 포커싱된 이온빔장치에 있어서, 상기 포커싱된 액체금속이온빔이 조사되는 구역은 상기 가스성분의 이온빔이 조사되는 구역과 동일한 것을 특징으로 하는 이온빔 장치.
  2. 반복적인 스케닝에 따른 조사 및 적절하게 포커싱된 액체 금속이온빔의 스퍼터링에 의해 샘플의 소정구역을 제거하는 공정과, 포커싱된 액체금속이온빔의 직경보다 직경이 큰 가스성분의 이온빔을 적어도 상기 소정구역을 포함한 구역에 조사하는 공정으로 이루어진 것을 특징으로 하는 이온빔처리방법.
  3. 제 2 항에 있어서, 소정구역에서 물질이 반응한 반응가스를 지시함과 동시에 가스성분의 이온빔을 조사하는 공정이 추가 구성된 것을 특징으로 하는 이온빔처리방법.
  4. 반복적인 스캐닝에 의해 적절하게 포커싱된 액체금속이온빔을 샘플의 소정구역에 방사하는 액체금속이온빔 조사유니트와, 샘플 특성에 악영향을 주지 않는 가스성분의 이온빔을 조사하는 가스이온빔 조사유니트 와, 상기 소정구역에 유기화합물 가스를 블로잉하는 유기화합물 가스블로잉 유니트로 구성된 이온빔 장치에 있어서, 상기 포커싱된 액체금속이온빔이 조사되는 위치는 가스성분의 이온빔이 방사되는 위치와 동일한 것을 특징으로 하는 이온빔 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940004030A 1993-03-02 1994-03-02 포커스이온빔장치및방법 KR100364207B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP05041560A JP3117836B2 (ja) 1993-03-02 1993-03-02 集束イオンビーム装置
JP93-41560 1993-03-02

Publications (2)

Publication Number Publication Date
KR940022125A true KR940022125A (ko) 1994-10-20
KR100364207B1 KR100364207B1 (ko) 2003-06-02

Family

ID=12611825

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940004030A KR100364207B1 (ko) 1993-03-02 1994-03-02 포커스이온빔장치및방법

Country Status (3)

Country Link
US (1) US5574280A (ko)
JP (1) JP3117836B2 (ko)
KR (1) KR100364207B1 (ko)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2945952B2 (ja) * 1995-03-06 1999-09-06 科学技術庁金属材料技術研究所長 減速集束イオンビーム堆積装置
DE29507225U1 (de) * 1995-04-29 1995-07-13 Grünewald, Wolfgang, Dr.rer.nat., 09122 Chemnitz Ionenstrahlpräparationsvorrichtung für die Elektronenmikroskopie
US5916424A (en) * 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
US6107108A (en) 1998-08-14 2000-08-22 Taiwan Semiconductor Manufacturing Company Dosage micro uniformity measurement in ion implantation
KR100394068B1 (ko) * 1998-11-06 2003-09-19 엘지.필립스 엘시디 주식회사 불순물 도핑장치
WO2001054163A1 (en) 2000-01-21 2001-07-26 Koninklijke Philips Electronics N.V. Shaped and low density focused ion beams
US6727500B1 (en) * 2000-02-25 2004-04-27 Fei Company System for imaging a cross-section of a substrate
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
US6696692B1 (en) * 2000-11-06 2004-02-24 Hrl Laboratories, Llc Process control methods for use with e-beam fabrication technology
JP4354657B2 (ja) * 2001-01-11 2009-10-28 エスアイアイ・ナノテクノロジー株式会社 集束イオンビーム装置
US6977386B2 (en) * 2001-01-19 2005-12-20 Fei Company Angular aperture shaped beam system and method
US6670717B2 (en) * 2001-10-15 2003-12-30 International Business Machines Corporation Structure and method for charge sensitive electrical devices
JP4302933B2 (ja) 2002-04-22 2009-07-29 株式会社日立ハイテクノロジーズ イオンビームによる穴埋め方法及びイオンビーム装置
JP4335497B2 (ja) * 2002-07-12 2009-09-30 エスアイアイ・ナノテクノロジー株式会社 イオンビーム装置およびイオンビーム加工方法
JP2004087174A (ja) * 2002-08-23 2004-03-18 Seiko Instruments Inc イオンビーム装置およびイオンビーム加工方法
JP4170048B2 (ja) * 2002-08-30 2008-10-22 エスアイアイ・ナノテクノロジー株式会社 イオンビーム装置およびイオンビーム加工方法
US7150811B2 (en) * 2002-11-26 2006-12-19 Pei Company Ion beam for target recovery
JP2004191358A (ja) * 2002-11-27 2004-07-08 Seiko Instruments Inc 複合荷電粒子ビームによる試料作製方法および装置
JP4205992B2 (ja) 2003-06-19 2009-01-07 株式会社日立ハイテクノロジーズ イオンビームによる試料加工方法、イオンビーム加工装置、イオンビーム加工システム、及びそれを用いた電子部品の製造方法
JP3887356B2 (ja) * 2003-07-08 2007-02-28 エスアイアイ・ナノテクノロジー株式会社 薄片試料作製方法
EP1501115B1 (en) 2003-07-14 2009-07-01 FEI Company Dual beam system
JP4344197B2 (ja) * 2003-08-26 2009-10-14 パナソニック株式会社 絶縁膜測定装置、絶縁膜測定方法及び絶縁膜評価装置
US7488952B2 (en) * 2003-10-16 2009-02-10 Alis Corporation Ion sources, systems and methods
US7557360B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7511280B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7518122B2 (en) * 2003-10-16 2009-04-14 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7786451B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7511279B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7368727B2 (en) 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
US7786452B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7504639B2 (en) * 2003-10-16 2009-03-17 Alis Corporation Ion sources, systems and methods
US7521693B2 (en) * 2003-10-16 2009-04-21 Alis Corporation Ion sources, systems and methods
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7557361B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7554097B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7601953B2 (en) 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
US7495232B2 (en) * 2003-10-16 2009-02-24 Alis Corporation Ion sources, systems and methods
US7554096B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7485873B2 (en) * 2003-10-16 2009-02-03 Alis Corporation Ion sources, systems and methods
US20070228287A1 (en) * 2006-03-20 2007-10-04 Alis Technology Corporation Systems and methods for a gas field ionization source
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7557358B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US20050211896A1 (en) * 2004-03-23 2005-09-29 International Business Machines Corporation Pt coating initiated by indirect electron beam for resist contact hole metrology
US7245133B2 (en) * 2004-07-13 2007-07-17 Credence Systems Corporation Integration of photon emission microscope and focused ion beam
US7842435B2 (en) * 2004-11-01 2010-11-30 Gm Global Technology Operations, Inc. Fuel cell water management enhancement method
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP5600371B2 (ja) 2006-02-15 2014-10-01 エフ・イ−・アイ・カンパニー 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング
TW200737267A (en) * 2006-03-20 2007-10-01 Alis Corp Systems and methods for a helium ion pump
JP2008171800A (ja) * 2006-10-31 2008-07-24 Fei Co 荷電粒子ビーム処理用保護層
US7804068B2 (en) * 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
DE102008013511B4 (de) 2007-03-12 2018-11-22 Hitachi High-Tech Science Corporation Vorrichtung zum Bearbeiten und Beobachten von Proben sowie Verfahren zum Bearbeiten und Beobachten von Querschnitten
JP2008311521A (ja) * 2007-06-15 2008-12-25 Aoi Electronics Co Ltd パーティクル除去方法、微小ピンセット装置、原子間力顕微鏡および荷電粒子ビーム装置
WO2009089499A2 (en) * 2008-01-09 2009-07-16 Fei Company Multibeam system
DE102008009640A1 (de) * 2008-02-18 2009-08-27 Carl Zeiss Nts Gmbh Prozessierungssystem
JP4877318B2 (ja) * 2008-12-19 2012-02-15 株式会社日立製作所 検査・解析方法および試料作製装置
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
JP5364049B2 (ja) * 2010-07-07 2013-12-11 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置、および試料作成方法
DE102011002583B9 (de) * 2011-01-12 2018-06-28 Carl Zeiss Microscopy Gmbh Teilchenstrahlgerät und Verfahren zur Bearbeitung und/oder Analyse einer Probe
KR101409387B1 (ko) 2013-01-16 2014-06-20 아주대학교산학협력단 경사 형태의 구리 나노 로드 제작방법
KR101509529B1 (ko) 2013-07-31 2015-04-07 아주대학교산학협력단 3차원 형태의 구리 나노구조물 및 그 형성 방법
JP6382495B2 (ja) * 2013-09-02 2018-08-29 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4088895A (en) * 1977-07-08 1978-05-09 Martin Frederick Wight Memory device utilizing ion beam readout
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
JPS6056342A (ja) * 1983-09-08 1985-04-01 Anelva Corp イオンビ−ム発生装置
JPH0815064B2 (ja) * 1987-11-25 1996-02-14 株式会社日立製作所 集束エネルギービーム加工装置および加工方法
US5083033A (en) * 1989-03-31 1992-01-21 Kabushiki Kaisha Toshiba Method of depositing an insulating film and a focusing ion beam apparatus
US4983830A (en) * 1989-06-29 1991-01-08 Seiko Instruments Inc. Focused ion beam apparatus having charged particle energy filter
JP3018041B2 (ja) * 1990-07-18 2000-03-13 セイコーインスツルメンツ株式会社 イオンビーム加工装置
JP3216881B2 (ja) * 1990-09-07 2001-10-09 株式会社日立製作所 試料断面観察方法
JP2965739B2 (ja) * 1991-03-28 1999-10-18 大日本印刷株式会社 集束イオンビーム装置

Also Published As

Publication number Publication date
KR100364207B1 (ko) 2003-06-02
JP3117836B2 (ja) 2000-12-18
JPH06260129A (ja) 1994-09-16
US5574280A (en) 1996-11-12

Similar Documents

Publication Publication Date Title
KR940022125A (ko) 포커스 이온빔 장치 및 방법
KR960009823A (ko) 에칭방법
KR900007069A (ko) 애싱(ashing)처리 방법 및 장치
JPH04137728A (ja) 集束イオンビームエッチング装置
DE69132587D1 (de) Photolithographisches Verarbeitungsverfahren und Vorrichtung
Steinfeld et al. Surface Etching by Laser‐Generated Free Radicals
KR900014636A (ko) 시료처리 방법 및 장치
KR930022602A (ko) 박막형성법
DE60118170D1 (de) Nanorohrbasierter elektronenemitter und verfahren zur dessen verwendung
JPH1050624A (ja) 化学元素の受容材料中への導入方法
JPS55162243A (en) Manufacture of semiconductor device
BR9909748A (pt) Método para irradiação de um objeto com radiação de elétrons
KR950004655A (ko) 고속원자빔을 이용한 처리방법
KR960030324A (ko) 이온주입장치, 이온주입방법 및 반도체장치
KR930020566A (ko) 레이저 처리방법 및 레이저 처리장치
US4687930A (en) Ion beam apparatus
EP0373599A3 (en) Method of determining the position of electron beam irradiation and device used in such method
JPS61195552A (ja) イオンビ−ム装置
JPS5740928A (en) Processing method of resist
JPS6459933A (en) Semiconductor device, and method and device for ion beam processing for production thereof
KR950033478A (ko) X선 분석 방법 및 장치
JPH06292988A (ja) 被膜加工装置および被膜加工方法
JPH0827584A (ja) 金属材料の洗浄方法および表面処理方法
JP2763785B2 (ja) 半導体ウェハーからパターンが描かれた焼成後のフォトレジスト層を除去する方法
KR940008365B1 (ko) 반도체 기판의 표면청정방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121031

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20131031

Year of fee payment: 12

EXPY Expiration of term