JPS6459933A - Semiconductor device, and method and device for ion beam processing for production thereof - Google Patents
Semiconductor device, and method and device for ion beam processing for production thereofInfo
- Publication number
- JPS6459933A JPS6459933A JP21703087A JP21703087A JPS6459933A JP S6459933 A JPS6459933 A JP S6459933A JP 21703087 A JP21703087 A JP 21703087A JP 21703087 A JP21703087 A JP 21703087A JP S6459933 A JPS6459933 A JP S6459933A
- Authority
- JP
- Japan
- Prior art keywords
- processing
- depth
- regions
- ion beam
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Welding Or Cutting Using Electron Beams (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To make it possible to process a high-aspect ratio hole in an accurate depth as well as to control a processing depth with high precision by a method wherein trial processing regions having the same structure in a depth direction and the same hysteresis of formations as those of an element region provided. CONSTITUTION:Trial processing regions 2c of a semiconductor device 2a formed on a semiconductor wafer 2 are positioned right under an ion source 3 by moving properly an X-Y table 1. Then, a work for processing the regions 2c, the area of a processed plane being Ao[mum<2>], is started by irradiating an ion beam 4. This area Ao is set sufficiently large for a necessary processing depth and is set in such a way that the aspect ratio of a recessed part at each processing site is small, that is, in such a way that charged particles or an emission spectrum 4a, which are generated from the processing sites, are detected sufficiently well by a detection means 7.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21703087A JPS6459933A (en) | 1987-08-31 | 1987-08-31 | Semiconductor device, and method and device for ion beam processing for production thereof |
EP19880305199 EP0295065A3 (en) | 1987-06-10 | 1988-06-08 | Semiconductor integrated circuit device, method of making same or cutting method for same, and cutting system using energy beam for same |
US07/584,180 US6753253B1 (en) | 1986-06-18 | 1990-09-18 | Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21703087A JPS6459933A (en) | 1987-08-31 | 1987-08-31 | Semiconductor device, and method and device for ion beam processing for production thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459933A true JPS6459933A (en) | 1989-03-07 |
Family
ID=16697737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21703087A Pending JPS6459933A (en) | 1986-06-18 | 1987-08-31 | Semiconductor device, and method and device for ion beam processing for production thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459933A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0470279U (en) * | 1990-10-24 | 1992-06-22 | ||
US5189948A (en) * | 1991-02-05 | 1993-03-02 | Beltec International | Low temperature spiral conduction vapor cooker and process |
US5436525A (en) * | 1992-12-03 | 1995-07-25 | Litton Systems, Inc. | Highly depressed, high thermal capacity, conduction cooled collector |
US5664482A (en) * | 1996-09-13 | 1997-09-09 | Beltec International | Hydrostatically-sealed atmospheric spiral spray cooker |
US6320315B1 (en) * | 1998-10-22 | 2001-11-20 | Litton Systems, Inc. | Ceramic electron collector assembly having metal sleeve for high temperature operation |
-
1987
- 1987-08-31 JP JP21703087A patent/JPS6459933A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0470279U (en) * | 1990-10-24 | 1992-06-22 | ||
US5189948A (en) * | 1991-02-05 | 1993-03-02 | Beltec International | Low temperature spiral conduction vapor cooker and process |
US5436525A (en) * | 1992-12-03 | 1995-07-25 | Litton Systems, Inc. | Highly depressed, high thermal capacity, conduction cooled collector |
US5664482A (en) * | 1996-09-13 | 1997-09-09 | Beltec International | Hydrostatically-sealed atmospheric spiral spray cooker |
US6320315B1 (en) * | 1998-10-22 | 2001-11-20 | Litton Systems, Inc. | Ceramic electron collector assembly having metal sleeve for high temperature operation |
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