KR940012551A - 와이어 본딩 크랙 방지용 반도체 칩 - Google Patents
와이어 본딩 크랙 방지용 반도체 칩 Download PDFInfo
- Publication number
- KR940012551A KR940012551A KR1019920020407A KR920020407A KR940012551A KR 940012551 A KR940012551 A KR 940012551A KR 1019920020407 A KR1019920020407 A KR 1019920020407A KR 920020407 A KR920020407 A KR 920020407A KR 940012551 A KR940012551 A KR 940012551A
- Authority
- KR
- South Korea
- Prior art keywords
- wire bonding
- semiconductor chip
- chip
- bonding crack
- crack prevention
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 5
- 230000002265 prevention Effects 0.000 title 1
- 239000011856 silicon-based particle Substances 0.000 claims abstract 4
- 229910018125 Al-Si Inorganic materials 0.000 claims abstract 2
- 229910018520 Al—Si Inorganic materials 0.000 claims abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000010276 construction Methods 0.000 claims 1
- 239000003607 modifier Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
본 발명은 반도체 패키지 제조용 칩을 리드프레임에 어태치하고 와이어본딩 할 때 와이어본딩에 따른 칩의 본딩 패드크랙을 예방하도록 칩에 관한 것으로, 칩의 Al-Si본딩패드를 라운드형의 Si입자를 사용한 것이며, 와이어 본딩시 본딩패드에 충격이 가해져도 Si입자가 라운드 형태이므로 산화막등의 크랙을 막을 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 (가), (나)는 본 발명의 칩패드용 Si입자의 확대 예시도.
제6도는 본 발명의 칩패드 부분확대 단면도이다.
Claims (2)
- 반도체 칩을 구성함에 있어서, 칩의 Al-Si본딩패드를 이루는 Si입자로 라운드형 Si입자를 사용함을 특징으로 하는 와이어본딩 크랙방지용 반도체 칩.
- 제1항에 있어서, 라운드형 Si입자는 실리콘 모디파이어로 도포된 것을 포함하여 이루어짐을 특징으로 하는 와이어본딩 크랙방지용 반도체 칩.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920020407A KR960005043B1 (ko) | 1992-11-02 | 1992-11-02 | 와이어 본딩 크랙 방지용 반도체 칩 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920020407A KR960005043B1 (ko) | 1992-11-02 | 1992-11-02 | 와이어 본딩 크랙 방지용 반도체 칩 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940012551A true KR940012551A (ko) | 1994-06-23 |
KR960005043B1 KR960005043B1 (ko) | 1996-04-18 |
Family
ID=19342312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920020407A KR960005043B1 (ko) | 1992-11-02 | 1992-11-02 | 와이어 본딩 크랙 방지용 반도체 칩 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960005043B1 (ko) |
-
1992
- 1992-11-02 KR KR1019920020407A patent/KR960005043B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR960005043B1 (ko) | 1996-04-18 |
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