KR940011278B1 - 반도체 제어장치 - Google Patents

반도체 제어장치 Download PDF

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Publication number
KR940011278B1
KR940011278B1 KR1019910012266A KR910012266A KR940011278B1 KR 940011278 B1 KR940011278 B1 KR 940011278B1 KR 1019910012266 A KR1019910012266 A KR 1019910012266A KR 910012266 A KR910012266 A KR 910012266A KR 940011278 B1 KR940011278 B1 KR 940011278B1
Authority
KR
South Korea
Prior art keywords
control
power supply
winding
igbt
transformer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910012266A
Other languages
English (en)
Korean (ko)
Other versions
KR920003646A (ko
Inventor
하루요시 모리
Original Assignee
미쓰비시 뎅끼 가부시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅끼 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅끼 가부시끼가이샤
Publication of KR920003646A publication Critical patent/KR920003646A/ko
Application granted granted Critical
Publication of KR940011278B1 publication Critical patent/KR940011278B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
KR1019910012266A 1990-07-25 1991-07-25 반도체 제어장치 Expired - Fee Related KR940011278B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-200708 1990-07-25
JP2200708A JP2855816B2 (ja) 1990-07-25 1990-07-25 半導体制御装置

Publications (2)

Publication Number Publication Date
KR920003646A KR920003646A (ko) 1992-02-29
KR940011278B1 true KR940011278B1 (ko) 1994-12-03

Family

ID=16428904

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910012266A Expired - Fee Related KR940011278B1 (ko) 1990-07-25 1991-07-25 반도체 제어장치

Country Status (6)

Country Link
US (1) US5166541A (https=)
JP (1) JP2855816B2 (https=)
KR (1) KR940011278B1 (https=)
CA (1) CA2047771C (https=)
DE (1) DE4124747A1 (https=)
FR (1) FR2665309B1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150002479A (ko) * 2013-06-28 2015-01-07 세미크론 엘렉트로니크 지엠비에치 앤드 코. 케이지 전력 반도체 회로

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2680925B1 (fr) * 1991-08-27 1993-12-17 Sextant Avionique Interrupteur statique a faibles pertes.
JP2837054B2 (ja) * 1992-09-04 1998-12-14 三菱電機株式会社 絶縁ゲート型半導体装置
JP2793946B2 (ja) * 1993-08-26 1998-09-03 三菱電機株式会社 電力用スイッチング装置
EP1292027B1 (en) * 2000-05-18 2011-07-13 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device
DE10152879B4 (de) * 2001-10-26 2005-11-24 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Halbleiterschalteranordnung
EP1480339A1 (de) * 2003-05-19 2004-11-24 ABB Technology AG Halbleiterschalteranordnung
US20060006849A1 (en) * 2004-06-28 2006-01-12 Haslett James W Inductor compensating circuit
DE102008055157A1 (de) * 2008-12-23 2010-06-24 Infineon Technologies Ag Ansteuerschaltung für eine Leistungshalbleiteranordnung und Leistungshalbleiteranordnung
DE102010063274B3 (de) * 2010-12-16 2012-01-26 Semikron Elektronik Gmbh & Co. Kg Vorrichtung zur Ansteuerung eines Leistungshalbleiterschalters über eine Gleichtaktdrossel
US9793889B2 (en) 2011-03-15 2017-10-17 Infineon Technologies Ag Semiconductor device including a circuit to compensate for parasitic inductance
WO2013032906A1 (en) * 2011-08-29 2013-03-07 Efficient Power Conversion Corporation Parallel connection methods for high performance transistors
DE102012112391B4 (de) * 2012-12-17 2018-10-04 Phoenix Contact Gmbh & Co. Kg Schaltnetzteil mit einer Kaskodenschaltung
CN105993122B (zh) * 2013-11-29 2018-05-18 日产自动车株式会社 开关装置
DE102014117385B4 (de) 2014-11-27 2021-12-09 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterschaltung und Verfahren zum Betrieb einer Leistungshalbleiterschaltung
DE102017125548A1 (de) 2017-11-01 2019-05-02 Sma Solar Technology Ag Schaltungsanordnung und leistungselektronische wandlerschaltung

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB949481A (en) * 1961-04-27 1964-02-12 Dehavilland Aircraft Improvements in or relating to safety devices for electrical switches
US3325598A (en) * 1963-09-18 1967-06-13 Bell Telephone Labor Inc Remote condition monitoring circuit with ringing current actuated switch connecting twomode oscillator to telephone line
US3297911A (en) * 1964-04-14 1967-01-10 Tung Sol Electric Inc Capacitive discharge ignition circuit using a gate controlled semiconductor switch
GB1233961A (https=) * 1969-01-08 1971-06-03
US3715608A (en) * 1970-09-23 1973-02-06 Teletype Corp Programmable circuit and method
NL7101794A (https=) * 1971-02-11 1972-08-15
US3778639A (en) * 1972-05-12 1973-12-11 Ibm Transistor switch using a current sharing pulse transformer
US3921034A (en) * 1972-12-29 1975-11-18 Canon Kk Stroboscopic device with electric shock preventive circuit
US3855518A (en) * 1973-12-26 1974-12-17 Honeywell Inf Systems Switching regulator using gate-turn-off scr
JPS5453954A (en) * 1977-10-07 1979-04-27 Fuji Electric Co Ltd Parallel connection mthod of transistor
US4823023A (en) * 1982-06-01 1989-04-18 Nippon Chemi-Con Corporation Transistor with differentiated control switching circuit
JPS61230519A (ja) * 1985-04-05 1986-10-14 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタの駆動回路
DE3717253A1 (de) * 1986-05-26 1987-12-03 Hitachi Ltd Direkte parallelschaltung von abschaltbaren halbleiterelementen
US4816984A (en) * 1987-02-06 1989-03-28 Siemens Aktiengesellschaft Bridge arm with transistors and recovery diodes
US4775925A (en) * 1987-11-23 1988-10-04 General Electric Company Method and apparatus for determining the control electrode to cathode junction voltage of a control turn-off semiconductor device and use of such determined voltage in the control of the device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150002479A (ko) * 2013-06-28 2015-01-07 세미크론 엘렉트로니크 지엠비에치 앤드 코. 케이지 전력 반도체 회로

Also Published As

Publication number Publication date
FR2665309B1 (fr) 1994-02-04
JPH0483416A (ja) 1992-03-17
CA2047771C (en) 1996-04-16
CA2047771A1 (en) 1992-01-26
KR920003646A (ko) 1992-02-29
DE4124747A1 (de) 1992-01-30
JP2855816B2 (ja) 1999-02-10
FR2665309A1 (fr) 1992-01-31
DE4124747C2 (https=) 1993-06-24
US5166541A (en) 1992-11-24

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