KR940010393A - 티타늄 질화물과 폴리실리콘으로 구성되는 적층된 층들을 이용하는 게이트 전극 - Google Patents

티타늄 질화물과 폴리실리콘으로 구성되는 적층된 층들을 이용하는 게이트 전극 Download PDF

Info

Publication number
KR940010393A
KR940010393A KR1019930020478A KR930020478A KR940010393A KR 940010393 A KR940010393 A KR 940010393A KR 1019930020478 A KR1019930020478 A KR 1019930020478A KR 930020478 A KR930020478 A KR 930020478A KR 940010393 A KR940010393 A KR 940010393A
Authority
KR
South Korea
Prior art keywords
gate
polysilicon
gate electrode
titanium nitride
central
Prior art date
Application number
KR1019930020478A
Other languages
English (en)
Inventor
황정모
폴락 고든
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR940010393A publication Critical patent/KR940010393A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

게이트 산화물(2)와 MOSFET 게이트의 폴리실리콘부와의 사이에 끼인 중앙 밴드갭 일함수 물질(TiN)들은 CMOS 기술에 있어서 임계 전압의 정확도와 대칭에 관한 문제점을 해결한다.

Description

티타늄 질화물과 폴리실리콘으로 구성되는 적층된 층들을 이용하는 게이트 전극
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 양호한 제1실시예를 도시한 단면도,
제2도는 본 발명의 양호한 제2실시예를 도시한 단면도.

Claims (6)

  1. 게이트 산화물과 게이트를 사이에 끼인 중앙 밴드갭 반도체 물질을 함유하는 게이트를 포함하는 것을 특징으로 하는 MOSFET.
  2. 제1항에 있어서, 상기 중앙 밴드갭 물질이 TiN, Si-Ge, 티타늄 실리사이드 또는 이들의 조합물들로부터 선택되는 것을 특징으로 하는 MOSFET.
  3. 제1항에 있어서, 실리콘을 함유한 상기 게이트부가 다결정 실리콘을 포함하는 것은 특징으로 하는 MOSFET.
  4. 게이트 산화물과 게이트부 사이에 끼인 중앙 밴드갭 반도체 물질을 함유하는 게이트와 실리콘을 함유하는 상기 게이트부를 각각 갖고 있는 NMOS 트랜지스터와 PMOS 트랜지스터를 포함하는 것을 특징으로 하는 CMOS 디바이스.
  5. 제4항에 있어서, 상기 중앙 밴드갭 물질이 TiN, Si-Ge, 티타늄 실리사이드 또는 이들의 조합물들로부터 선택되는 것을 특징으로 라는 CMOS 디바이스.
  6. 제4항에 있어서, 실리콘을 함유한 상기 게이트부가 다결정 실리콘을 포함하는 것을 특징으로 하는 CMOS 디바이스.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930020478A 1992-10-05 1993-10-05 티타늄 질화물과 폴리실리콘으로 구성되는 적층된 층들을 이용하는 게이트 전극 KR940010393A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95614192A 1992-10-05 1992-10-05
US07/956,141 1992-10-05

Publications (1)

Publication Number Publication Date
KR940010393A true KR940010393A (ko) 1994-05-26

Family

ID=25497807

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930020478A KR940010393A (ko) 1992-10-05 1993-10-05 티타늄 질화물과 폴리실리콘으로 구성되는 적층된 층들을 이용하는 게이트 전극

Country Status (4)

Country Link
EP (1) EP0614226A1 (ko)
JP (1) JPH06342883A (ko)
KR (1) KR940010393A (ko)
TW (1) TW300669U (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022164286A1 (ko) * 2021-01-29 2022-08-04 삼성전자 주식회사 수신한 데이터 기록의 시간을 동기화하는 전자 장치 및 그 방법

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222240B1 (en) * 1998-07-22 2001-04-24 Advanced Micro Devices, Inc. Salicide and gate dielectric formed from a single layer of refractory metal
US6140167A (en) * 1998-08-18 2000-10-31 Advanced Micro Devices, Inc. High performance MOSFET and method of forming the same using silicidation and junction implantation prior to gate formation
US6410967B1 (en) 1998-10-15 2002-06-25 Advanced Micro Devices, Inc. Transistor having enhanced metal silicide and a self-aligned gate electrode
US6084280A (en) * 1998-10-15 2000-07-04 Advanced Micro Devices, Inc. Transistor having a metal silicide self-aligned to the gate
DE19945433C2 (de) * 1999-09-22 2002-03-28 Infineon Technologies Ag Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit Speicher- und Logiktransistoren
WO2001041544A2 (en) * 1999-12-11 2001-06-14 Asm America, Inc. Deposition of gate stacks including silicon germanium layers
EP1183727A1 (en) * 2000-02-17 2002-03-06 Koninklijke Philips Electronics N.V. SEMICONDUCTOR DEVICE WITH AN INTEGRATED CMOS CIRCUIT WITH MOS TRANSISTORS HAVING SILICON-GERMANIUM (Si 1-x?Ge x?) GATE ELECTRODES, AND METHOD OF MANUFACTURING SAME
KR100387259B1 (ko) * 2000-12-29 2003-06-12 주식회사 하이닉스반도체 반도체 소자의 제조 방법
SG111968A1 (en) 2001-09-28 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4736313B2 (ja) * 2002-09-10 2011-07-27 日本電気株式会社 薄膜半導体装置
US7316962B2 (en) 2005-01-07 2008-01-08 Infineon Technologies Ag High dielectric constant materials
US20060151845A1 (en) * 2005-01-07 2006-07-13 Shrinivas Govindarajan Method to control interfacial properties for capacitors using a metal flash layer
JP2008016538A (ja) * 2006-07-04 2008-01-24 Renesas Technology Corp Ｍｏｓ構造を有する半導体装置及びその製造方法
US7776680B2 (en) * 2008-01-03 2010-08-17 International Business Machines Corporation Complementary metal oxide semiconductor device with an electroplated metal replacement gate
US8476132B2 (en) 2008-01-29 2013-07-02 Unisantis Electronics Singapore Pte Ltd. Production method for semiconductor device
JP5258120B2 (ja) * 2008-01-29 2013-08-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法
WO2009096002A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体装置の製造方法
US8159040B2 (en) * 2008-05-13 2012-04-17 International Business Machines Corporation Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor
US9041116B2 (en) 2012-05-23 2015-05-26 International Business Machines Corporation Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs)
US20170110376A1 (en) 2015-10-14 2017-04-20 Globalfoundries Inc. Structures with thinned dielectric material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
KR920005242A (ko) * 1990-08-20 1992-03-28 김광호 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022164286A1 (ko) * 2021-01-29 2022-08-04 삼성전자 주식회사 수신한 데이터 기록의 시간을 동기화하는 전자 장치 및 그 방법

Also Published As

Publication number Publication date
EP0614226A1 (en) 1994-09-07
JPH06342883A (ja) 1994-12-13
TW300669U (en) 1997-03-11

Similar Documents

Publication Publication Date Title
KR940010393A (ko) 티타늄 질화물과 폴리실리콘으로 구성되는 적층된 층들을 이용하는 게이트 전극
KR910001993A (ko) 반도체장치의 제조방법
KR910017676A (ko) 박막트랜지스터
SE9704149D0 (sv) A semiconductor device of SiC and a transistor of SiC having an insulated gate
KR920010957A (ko) 박막 반도체 장치
DE60231743D1 (de) Komplementär-mis-bauelement
KR930001438A (ko) 정적 반도체 메모리 장치
KR900000968A (ko) 반도체 시간 지연소자
KR860001479A (ko) 반도체 집적 회로장치
KR870003578A (ko) Mos 트랜지스터 회로
KR910010728A (ko) 복합형 직접회로소자
KR920010902A (ko) 반도체장치
KR900002462A (ko) 반도체 장치
KR830006822A (ko) 반도체집적회로장치
KR890004444A (ko) Mos트랜지스터
KR890017769A (ko) 반도체 장치 및 제조방법
KR900017129A (ko) 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법
KR900003963A (ko) 반도체장치
KR900017104A (ko) Mos형 전계효과트랜지스터
KR930022601A (ko) 반도체 장치의 제조방법
KR930009097A (ko) Mos 트랜지스터 및 이것을 사용한 전하검출장치
KR930018757A (ko) 화합물 반도체장치
KR910010742A (ko) 반도체 집적회로장치
KR910016103A (ko) 반도체장치
KR840009182A (ko) 반도체 장치

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid