KR940008206B1 - 고전압 스위치 회로 - Google Patents

고전압 스위치 회로 Download PDF

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Publication number
KR940008206B1
KR940008206B1 KR1019910024801A KR910024801A KR940008206B1 KR 940008206 B1 KR940008206 B1 KR 940008206B1 KR 1019910024801 A KR1019910024801 A KR 1019910024801A KR 910024801 A KR910024801 A KR 910024801A KR 940008206 B1 KR940008206 B1 KR 940008206B1
Authority
KR
South Korea
Prior art keywords
high voltage
transistor
switch circuit
gate
power supply
Prior art date
Application number
KR1019910024801A
Other languages
English (en)
Korean (ko)
Other versions
KR930014615A (ko
Inventor
이웅무
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019910024801A priority Critical patent/KR940008206B1/ko
Priority to TW081108372A priority patent/TW209926B/zh
Priority to FR9213607A priority patent/FR2685807B1/fr
Priority to DE4242801A priority patent/DE4242801C2/de
Priority to ITMI922927A priority patent/IT1256217B/it
Priority to GB9518262A priority patent/GB2291296B/en
Priority to GB9226862A priority patent/GB2262850B/en
Priority to JP34656292A priority patent/JP2677747B2/ja
Publication of KR930014615A publication Critical patent/KR930014615A/ko
Application granted granted Critical
Publication of KR940008206B1 publication Critical patent/KR940008206B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Non-Volatile Memory (AREA)
  • Dc-Dc Converters (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1019910024801A 1991-12-28 1991-12-28 고전압 스위치 회로 KR940008206B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019910024801A KR940008206B1 (ko) 1991-12-28 1991-12-28 고전압 스위치 회로
TW081108372A TW209926B (ja) 1991-12-28 1992-10-21
FR9213607A FR2685807B1 (fr) 1991-12-28 1992-11-12 Circuit de commutation haute tension.
DE4242801A DE4242801C2 (de) 1991-12-28 1992-12-17 Hochspannungsschaltkreis
ITMI922927A IT1256217B (it) 1991-12-28 1992-12-22 Circuito di commutazione di alta tensione in particolare per dispositivi di memoria a semiconduttori.
GB9518262A GB2291296B (en) 1991-12-28 1992-12-23 Switching circuit
GB9226862A GB2262850B (en) 1991-12-28 1992-12-23 Switching circuit
JP34656292A JP2677747B2 (ja) 1991-12-28 1992-12-25 高電圧スイッチ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910024801A KR940008206B1 (ko) 1991-12-28 1991-12-28 고전압 스위치 회로

Publications (2)

Publication Number Publication Date
KR930014615A KR930014615A (ko) 1993-07-23
KR940008206B1 true KR940008206B1 (ko) 1994-09-08

Family

ID=19326362

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910024801A KR940008206B1 (ko) 1991-12-28 1991-12-28 고전압 스위치 회로

Country Status (7)

Country Link
JP (1) JP2677747B2 (ja)
KR (1) KR940008206B1 (ja)
DE (1) DE4242801C2 (ja)
FR (1) FR2685807B1 (ja)
GB (1) GB2262850B (ja)
IT (1) IT1256217B (ja)
TW (1) TW209926B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4128763B2 (ja) 2000-10-30 2008-07-30 株式会社東芝 電圧切り替え回路
KR100725993B1 (ko) * 2005-12-28 2007-06-08 삼성전자주식회사 누설 전류를 방지하는 로우 디코더 회로 및 이를 구비하는반도체 메모리 장치
JP4909647B2 (ja) 2006-06-02 2012-04-04 株式会社東芝 不揮発性半導体記憶装置
KR20150121288A (ko) * 2014-04-17 2015-10-29 에스케이하이닉스 주식회사 고전압 스위치 회로 및 이를 포함하는 비휘발성 메모리

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541030B2 (ja) * 1972-02-09 1980-10-21
US4511811A (en) * 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
JPS58151124A (ja) * 1982-03-04 1983-09-08 Ricoh Co Ltd レベル変換回路
US4672241A (en) * 1985-05-29 1987-06-09 Advanced Micro Devices, Inc. High voltage isolation circuit for CMOS networks
US4689495A (en) * 1985-06-17 1987-08-25 Advanced Micro Devices, Inc. CMOS high voltage switch
JPH0748310B2 (ja) * 1987-04-24 1995-05-24 株式会社東芝 半導体集積回路
US4888738A (en) * 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
DE3934303C2 (de) * 1988-10-15 2001-01-25 Sony Corp Adreßdecoder für nichtflüchtige Speicher

Also Published As

Publication number Publication date
ITMI922927A0 (it) 1992-12-22
IT1256217B (it) 1995-11-29
FR2685807A1 (fr) 1993-07-02
KR930014615A (ko) 1993-07-23
TW209926B (ja) 1993-07-21
FR2685807B1 (fr) 1995-11-03
JPH05259473A (ja) 1993-10-08
ITMI922927A1 (it) 1994-06-22
GB9226862D0 (en) 1993-02-17
GB2262850A (en) 1993-06-30
GB2262850B (en) 1996-04-17
DE4242801A1 (ja) 1993-07-01
JP2677747B2 (ja) 1997-11-17
DE4242801C2 (de) 2000-02-10

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G160 Decision to publish patent application
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Year of fee payment: 17

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