KR940003408B1 - 어드레스 천이 검출회로(atd)를 내장한 반도체 메모리 장치 - Google Patents

어드레스 천이 검출회로(atd)를 내장한 반도체 메모리 장치 Download PDF

Info

Publication number
KR940003408B1
KR940003408B1 KR1019910013273A KR910013273A KR940003408B1 KR 940003408 B1 KR940003408 B1 KR 940003408B1 KR 1019910013273 A KR1019910013273 A KR 1019910013273A KR 910013273 A KR910013273 A KR 910013273A KR 940003408 B1 KR940003408 B1 KR 940003408B1
Authority
KR
South Korea
Prior art keywords
output
circuit
input
address
channel
Prior art date
Application number
KR1019910013273A
Other languages
English (en)
Korean (ko)
Other versions
KR930003146A (ko
Inventor
김본경
이웅무
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019910013273A priority Critical patent/KR940003408B1/ko
Priority to DE4205578A priority patent/DE4205578C2/de
Priority to GB9207052A priority patent/GB2258330B/en
Priority to JP7703692A priority patent/JPH0748308B2/ja
Priority to US07/866,852 priority patent/US5313435A/en
Publication of KR930003146A publication Critical patent/KR930003146A/ko
Application granted granted Critical
Publication of KR940003408B1 publication Critical patent/KR940003408B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
KR1019910013273A 1991-07-31 1991-07-31 어드레스 천이 검출회로(atd)를 내장한 반도체 메모리 장치 KR940003408B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910013273A KR940003408B1 (ko) 1991-07-31 1991-07-31 어드레스 천이 검출회로(atd)를 내장한 반도체 메모리 장치
DE4205578A DE4205578C2 (de) 1991-07-31 1992-02-24 Adressübergangsdetektorschaltkreis zur Verwendung in einer Halbleiterspeichervorrichtung
GB9207052A GB2258330B (en) 1991-07-31 1992-03-31 Address transition detector for semiconductor memory device
JP7703692A JPH0748308B2 (ja) 1991-07-31 1992-03-31 アドレス遷移検出回路
US07/866,852 US5313435A (en) 1991-07-31 1992-04-10 Semiconductor memory device having address transition detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910013273A KR940003408B1 (ko) 1991-07-31 1991-07-31 어드레스 천이 검출회로(atd)를 내장한 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
KR930003146A KR930003146A (ko) 1993-02-24
KR940003408B1 true KR940003408B1 (ko) 1994-04-21

Family

ID=19318114

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910013273A KR940003408B1 (ko) 1991-07-31 1991-07-31 어드레스 천이 검출회로(atd)를 내장한 반도체 메모리 장치

Country Status (5)

Country Link
US (1) US5313435A (de)
JP (1) JPH0748308B2 (de)
KR (1) KR940003408B1 (de)
DE (1) DE4205578C2 (de)
GB (1) GB2258330B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3059024B2 (ja) * 1993-06-15 2000-07-04 沖電気工業株式会社 半導体記憶回路
US5696463A (en) * 1993-11-02 1997-12-09 Hyundai Electronics Industries Co., Ltd. Address transition detecting circuit which generates constant pulse width signal
JPH07220487A (ja) * 1994-01-27 1995-08-18 Toshiba Corp 不揮発性メモリ回路
US5563843A (en) * 1995-03-09 1996-10-08 Intel Corporation Method and circuitry for preventing propagation of undesired ATD pulses in a flash memory device
JPH0955087A (ja) * 1995-08-11 1997-02-25 Texas Instr Japan Ltd 半導体メモリ装置
US5757718A (en) * 1996-02-28 1998-05-26 Nec Corporation Semiconductor memory device having address transition detection circuit for controlling sense and latch operations
US5943291A (en) * 1997-03-12 1999-08-24 Micron Technology, Inc. Method and apparatus for signal transition detection in integrated circuits
US6160733A (en) * 1997-08-29 2000-12-12 Enable Semiconductor, Inc. Low voltage and low power static random access memory (SRAM)
US6788136B2 (en) * 2001-10-25 2004-09-07 General Electric Company Methods and apparatus for amplification in high temperature environments
US6570405B1 (en) * 2001-12-20 2003-05-27 Integrated Device Technology, Inc. Integrated output driver circuits having current sourcing and current sinking characteristics that inhibit power bounce and ground bounce
US6894529B1 (en) 2003-07-09 2005-05-17 Integrated Device Technology, Inc. Impedance-matched output driver circuits having linear characteristics and enhanced coarse and fine tuning control
US6967501B1 (en) 2003-12-18 2005-11-22 Integrated Device Technology, Inc. Impedance-matched output driver circuits having enhanced predriver control
US7268589B2 (en) * 2005-12-16 2007-09-11 Actel Corporation Address transition detector for fast flash memory device
JP4951307B2 (ja) * 2006-10-17 2012-06-13 シャープ株式会社 半導体記憶装置の読み出し制御回路
CN114257221B (zh) * 2022-03-01 2022-06-03 成都芯翼科技有限公司 一种信号沿检测延迟电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4592028A (en) * 1982-06-09 1986-05-27 Tokyo Shibaura Denki Kabushiki Kaisha Memory device
US4563599A (en) * 1983-03-28 1986-01-07 Motorola, Inc. Circuit for address transition detection
JP2577724B2 (ja) * 1986-07-31 1997-02-05 三菱電機株式会社 半導体記憶装置
JPS6342090A (ja) * 1986-08-07 1988-02-23 Fujitsu Ltd ユニバーサルジョイント
JPH0612632B2 (ja) * 1987-02-27 1994-02-16 日本電気株式会社 メモリ回路
US4807198A (en) * 1987-12-28 1989-02-21 Motorola, Inc. Memory input buffer with hysteresis and dc margin
JPH02131010A (ja) * 1988-11-10 1990-05-18 Fujitsu Ltd アドレス変化検出回路
JPH07118196B2 (ja) * 1988-12-28 1995-12-18 株式会社東芝 スタティック型半導体メモリ
GB9007786D0 (en) * 1990-04-06 1990-06-06 Gillingham Peter B Transition detection circuit
US5003513A (en) * 1990-04-23 1991-03-26 Motorola, Inc. Latching input buffer for an ATD memory
EP0463243B1 (de) * 1990-06-29 1997-04-23 Koninklijke Philips Electronics N.V. Integrierte Halbleiterschaltung mit einem Detektor

Also Published As

Publication number Publication date
JPH0748308B2 (ja) 1995-05-24
GB9207052D0 (en) 1992-05-13
US5313435A (en) 1994-05-17
GB2258330A (en) 1993-02-03
GB2258330B (en) 1995-07-05
DE4205578C2 (de) 1994-06-01
JPH05101665A (ja) 1993-04-23
DE4205578A1 (de) 1993-02-04
KR930003146A (ko) 1993-02-24

Similar Documents

Publication Publication Date Title
KR940003408B1 (ko) 어드레스 천이 검출회로(atd)를 내장한 반도체 메모리 장치
EP0302795B1 (de) Halbleiter-Speicherschaltung mit einer Verzögerungsschaltung
US4031415A (en) Address buffer circuit for semiconductor memory
US4843596A (en) Semiconductor memory device with address transition detection and timing control
KR0161510B1 (ko) 반도체 메모리 장치
US5696726A (en) Complementary differential amplifier in which direct current amplification gain can be set arbitrarily and semiconductor memory divice using the same
US5295117A (en) Semiconductor memory device and method for controlling an output buffer utilizing an address transition detector
JP3568573B2 (ja) アドレス遷移検出回路を内蔵するメモリ装置
US5805506A (en) Semiconductor device having a latch circuit for latching data externally input
US4931998A (en) Semiconductor memory device which can suppress operation error due to power supply noise
JP3805802B2 (ja) 半導体メモリ装置のデータ出力回路
US5089726A (en) Fast cycle time clocked amplifier
US5646892A (en) Data reading circuit
US5446694A (en) Semiconductor memory device
KR950006336B1 (ko) 반도체 메모리장치의 전류센싱회로
KR0179859B1 (ko) 반도체 메모리의 출력 제어 회로
US5559455A (en) Sense amplifier with overvoltage protection
EP0228958A2 (de) Halbleiterspeicheranordnung mit einer Rücksetzsignalgeneratorschaltung
JP3109986B2 (ja) 信号遷移検出回路
US5438551A (en) Semiconductor integrated circuit device
JPH01116992A (ja) センス増幅器制御回路
KR100285031B1 (ko) 공급전압차에 의해 데이타를 증폭 및 유지하기 위한 회로배열
KR100572839B1 (ko) 한 쌍의 상보 신호선 상의 불필요하게 된 전하를 이용하는 반도체 장치
KR0146535B1 (ko) 어드레스 천이 검출회로를 내장한 반도체 메모리 장치
KR0155620B1 (ko) 반도체 메모리 소자의 펄스 폭 제어 회로

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100413

Year of fee payment: 17

LAPS Lapse due to unpaid annual fee